1998
Document No. D16184EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
HR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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availability and additional information.
FEATURES
Up to 2A high current drives such as IC outputs and actuators
available
On-chip bias resistor
Low power consumption during drive
HR1 SERIES LISTS
Products
Marking
R
1
(K
)
R
2
(K
)
HR1A3M
MP
1.0
1.0
HR1F3P
MQ
2.2
10
HR1L3N
MR
4.7
10
HR1A4,
MS
10
10
HR1L2Q
MT
0.47
4.7
HR1F2Q
MU
0.22
2.2
HR1A4A
MX
-
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-60
V
Collector to emitter voltage
V
CEO
-60
V
Emitter to base voltage
V
EBO
-10
V
Collector current (DC)
I
C(DC)
-1.0
A
Collector current (Pulse)
I
C(pulse)
*
-2.0
A
Base current (DC)
I
B(DC)
-0.02
A
Total power dissipation
P
T
**
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50 %
** When 0.7 mm
16 cm
2
ceramic board is used
'DWD 6KHHW '(-9'6
HR1 SERIES
+5$0
(/(&75,&$/ &+$5$&7(5,67,&6 7D &
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-60 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
50
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.4 A
-0.4
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
0.7
1.0
1.3
k
E-to-B resistance
R
2
0.7
1.0
1.3
k
3:
V GXW\ F\FOH
+5)3
(/(&75,&$/ &+$5$&7(5,67,&6 7D &
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-60 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
150
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.3 A
-0.3
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
1.54
2.2
2.86
k
E-to-B resistance
R
2
7
10
13
k
3:
V GXW\ F\FOH
+5/1
(/(&75,&$/ &+$5$&7(5,67,&6 7D &
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-60 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
150
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.2 A
-0.3
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
3.29
4.7
6.11
k
E-to-B resistance
R
2
7
10
13
k
3:
V GXW\ F\FOH
'DWD 6KHHW '(-9'6
HR1 SERIES
+5$0
(/(&75,&$/ &+$5$&7(5,67,&6 7D &
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-60 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
150
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.1 A
-0.2
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
7
10
13
k
E-to-B resistance
R
2
7
10
13
k
3:
V GXW\ F\FOH
+5/4
(/(&75,&$/ &+$5$&7(5,67,&6 7D &
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-60 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
150
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.5 A
-0.55
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
3:
V GXW\ F\FOH
+5)4
(/(&75,&$/ &+$5$&7(5,67,&6 7D &
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-60 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
100
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.5 A
-0.55
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
154
220
286
k
E-to-B resistance
R
2
1.54
2.2
2.86
k
3:
V GXW\ F\FOH
'DWD 6KHHW '(-9'6
HR1 SERIES
+5$$
(/(&75,&$/ &+$5$&7(5,67,&6 7D &
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-60 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
150
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
50
-
Collector saturation voltage
V
CE(sat)
**
I
C
=
-500 mA, I
B
=
-10 mA
0.20
0.35
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
-1.5
V
Input resistance
R
1
-
-
-
E-to-B resistance
R
2
7
10
13
k
3:
V GXW\ F\FOH
'DWD 6KHHW '(-9'6
HR1 SERIES
7<3,&$/ &+$5$&7(5,67,&6 7
a
&
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