ChipFind - документация

Электронный компонент: M11012EJ4V0DSJ1

Скачать:  PDF   ZIP

Document Outline

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1995
MOS INTEGRATED CIRCUIT
PD43256B-X
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
EXTENDED TEMPERATURE OPERATION
DATA SHEET
Document No. M11012EJ4V0DSJ1 (4th edition)
Date Published December 2000 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
Description
The
PD43256B-X is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
The
PD43256B-X is an extended-operating-temperature version of the
PD43256B (X version : T
A
= 25 to +85
C). And A and B versions are low voltage operations. Battery backup is available.
The
PD43256B-X is packed in 28-pin plastic TSOP (I) (8 x 13.4 mm).
Features
32,768 words by 8 bits organization
Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
Operating ambient temperature: T
A
= 25 to +85
C
Low voltage operation (A version: V
CC
= 3.0 to 5.5 V, B version: V
CC
= 2.7 to 5.5 V)
Low V
CC
data retention: 2.0 V (MIN.)
/OE input for easy application
Part number
Access time
Operating supply Operating ambient
Supply current
ns (MAX.)
voltage
temperature
At operating
At standby
At data retention
V
C
mA (MAX.)
A (MAX.)
A (MAX.)
Note1
PD43256B-xxX
70, 85
4.5 to 5.5
-
25 to +85
45
50
2
PD43256B-AxxX
85
Note2
, 100, 120
Note2
3.0 to 5.5
PD43256B-BxxX
Note2
100, 120
Note2
, 150
Note2
2.7 to 5.5
40
Notes 1. T
A
40
C, V
CC
= 3.0 V
2. 100 s (MAX.) (V
CC
= 4.5 to 5.5 V)
Version X
This Data sheet can be applied to the version X. Each version is identified with its lot number. Letter X in the fifth
character position in a lot number signifies version X.
D43256B-X
Lot number
JAPAN
2
PD43256B-X
Data Sheet M11012EJ4V0DS
Ordering Information
Part number
Package
Access time
Operating supply Operating ambient
Remark
ns (MAX.)
voltage
temperature
V
C
PD43256BGW-70X-9JL
28-PIN PLASTIC TSOP(I)
70
4.5 to 5.5
25 to +85
PD43256BGW-85X-9JL
(8x13.4) (Normal bent)
85
PD43256BGW-A85X-9JL
85
3.0 to 5.5
A version
PD43256BGW-A10X-9JL
100
PD43256BGW-A12X-9JL
120
PD43256BGW-B10X-9JL
100
2.7 to 5.5
B version
PD43256BGW-B12X-9JL
120
PD43256BGW-B15X-9JL
150
PD43256BGW-70X-9KL
28-PIN PLASTIC TSOP(I)
70
4.5 to 5.5
PD43256BGW-85X-9KL
(8x13.4) (Reverse bent)
85
PD43256BGW-A85X-9KL
85
3.0 to 5.5
A version
PD43256BGW-A10X-9KL
100
PD43256BGW-A12X-9KL
120
PD43256BGW-B10X-9KL
100
2.7 to 5.5
B version
PD43256BGW-B12X-9KL
120
PD43256BGW-B15X-9KL
150
3
PD43256B-X
Data Sheet M11012EJ4V0DS
Pin Configurations (Marking Side)
/xxx indicates active low signal.
28-PIN PLASTIC TSOP(I) (8x13.4) (Normal bent)
[



PD43256BGW-xxX-9JL]
[



PD43256BGW-AxxX-9JL]
[



PD43256BGW-BxxX-9JL]
/OE
A11
A9
A8
A13
/WE
V
CC
A14
A12
A7
A6
A5
A4
A3
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
28-PIN PLASTIC TSOP(I) (8x13.4) (Reverse bent)
[



PD43256BGW-xxX-9KL]
[



PD43256BGW-AxxX-9KL]
[



PD43256BGW-BxxX-9KL]
/OE
A11
A9
A8
A13
/WE
V
CC
A14
A12
A7
A6
A5
A4
A3
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A0 - A14
: Address inputs
I/O1 - I/O8
: Data inputs / outputs
/CS
: Chip Select
/WE
: Write Enable
/OE
: Output Enable
V
CC
: Power supply
GND
: Ground
Remark Refer to Package Drawings for the 1-pin index mark.
4
PD43256B-X
Data Sheet M11012EJ4V0DS
Block Diagram
Address buffer
Memory cell array
262,144 bits
Input data
controller
A0
A14
I/O8
Sense amplifier / Switching circuit
Column decoder
/WE
I/O1
V
CC
GND
/CS
/OE
Address
buffer
Row
decoder
Output data
controller
Truth Table
/CS
/OE
/WE
Mode
I/O
Supply current
H
Not selected
High impedance
I
SB
L
H
H
Output disable
I
CCA
L
L
Write
D
IN
L
L
H
Read
D
OUT
Remark
: V
IH
or V
IL
5
PD43256B-X
Data Sheet M11012EJ4V0DS
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
V
CC
0.5
Note
to +7.0
V
Input / Output voltage
V
T
0.5
Note
to V
CC
+ 0.5
V
Operating ambient temperature
T
A
25 to +85
C
Storage temperature
T
stg
55 to +125
C
Note 3.0 V (MIN.) (Pulse width : 50 ns)
Caution
Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol Condition
PD43256B-xxX
PD43256B-AxxX
PD43256B-BxxX
Unit
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Supply voltage
V
CC
4.5
5.5
3.0
5.5
2.7
5.5
V
High level input voltage
V
IH
2.4
V
CC
+0.5
2.4
V
CC
+0.5
2.4
V
CC
+0.5
V
Low level input voltage
V
IL
0.3
Note
+0.6
0.3
Note
+0.4
0.3
Note
+0.4
V
Operating ambient temperature
T
A
25
+85
25
+85
25
+85
C
Note 3.0 V (MIN.) (Pulse width: 50 ns)
Capacitance (T
A
= 25



C, f = 1 MHz)
Parameter
Symbol
Test conditions
MIN.
TYP.
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
5
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
8
pF
Remarks 1. V
IN
: Input voltage
V
I/O
: Input / Output voltage
2. These parameters are periodically sampled and not 100% tested.