Document Outline
- COVER
- Features
- Ordering Information
- Pin Configuration
- Block Diagram
- Electrical Specifications
- Package Drawing
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MOS INTEGRATED CIRCUIT
PD434016A
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
DATA SHEET
Document No. M12228EJ8V0DS00 (8th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
1996
Description
The
PD434016A is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 5.0 V
0.5 V.
The
PD434016A is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).
Features
262,144 words by 16 bits organization
Fast access time : 12, 15, 17, 20 ns (MAX.)
Byte data control : /LB (I/O1 to I/O8), /UB (I/O9 to I/O16)
Output Enable input for easy application
Single +5.0 V power supply
Ordering Information
Part number
Package
Access time
Supply current mA (MAX.)
ns (MAX.)
At operating
At standby
PD434016ALE-12
44-pin plastic SOJ
12
230
10
PD434016ALE-15
(10.16 mm (400))
15
200
PD434016ALE-17
17
190
PD434016ALE-20
20
180
PD434016AG5-12-7JF
44-pin plastic TSOP (II)
12
230
PD434016AG5-15-7JF
(10.16 mm (400))
15
200
PD434016AG5-17-7JF
(Normal bent)
17
190
PD434016AG5-20-7JF
20
180
2
PD434016A
Data Sheet M12228EJ8V0DS
Pin Configuration
/xxx indicates active low signal.
44-pin plastic SOJ (10.16 mm (400))
[
PD434016ALE ]
44-pin plastic TSOP (II) (10.16 mm (400)) (Normal bent)
[
PD434016AG5-7JF ]
Marking Side
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A0
A1
A2
A3
A4
/CS
I/O1
I/O2
I/O3
I/O4
V
CC
GND
I/O5
I/O6
I/O7
I/O8
/WE
A5
A6
A7
A8
A9
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
/OE
/UB
/LB
I/O16
I/O15
I/O14
I/O13
GND
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
A0 to A17
: Address Inputs
I/O1 to I/O16 : Data Inputs / Outputs
/CS
: Chip Select
/WE
: Write Enable
/OE
: Output Enable
/LB, /UB
: Byte data select
V
CC
: Power supply
GND
: Ground
NC
: No connection
Remark Refer to Package Drawings for the 1-pin index mark.
3
PD434016A
Data Sheet M12228EJ8V0DS
Block Diagram
GND
V
CC
/WE
/OE
/CS
Input data
controller
Sense amplifier /
Switching circuit
Column decoder
Address buffer
A0
|
A17
Address buffer
Row decoder
Memory cell array
4,194,304 bits
Output data
controller
/LB
/UB
I/O9 to I/O16
I/O1 to I/O8
Truth Table
/CS
/OE
/WE
/LB
/UB
Mode
I/O
Supply current
I/O1 to I/O8
I/O9 to I/O16
H
Not selected
High-Z
High-Z
I
SB
L
L
H
L
L
Read
D
OUT
D
OUT
I
CC
L
H
D
OUT
High-Z
H
L
High-Z
D
OUT
L
L
L
L
Write
D
IN
D
IN
L
H
D
IN
High-Z
H
L
High-Z
D
IN
L
H
H
Output disable
High-Z
High-Z
L
H
H
High-Z
High-Z
Remark
: Don't care
4
PD434016A
Data Sheet M12228EJ8V0DS
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
V
CC
0.5
Note
to +7.0
V
Input / Output voltage
V
T
0.5
Note
to V
CC
+0.5
V
Operating ambient temperature
T
A
0 to 70
C
Storage temperature
T
stg
55 to +125
C
Note 2.0 V (MIN.) (pulse width : 2 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
4.5
5.0
5.5
V
High level input voltage
V
IH
2.2
V
CC
+0.5
V
Low level input voltage
V
IL
0.5
Note
+0.8
V
Operating ambient temperature
T
A
0
70
C
Note 2.0 V (MIN.) (pulse width : 2 ns)
5
PD434016A
Data Sheet M12228EJ8V0DS
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input leakage current
I
LI
V
IN
= 0 V to V
CC
2
+2
A
Output leakage current
I
LO
V
I/O
= 0 V to V
CC
, /CS = V
IH
or /OE = V
IH
2
+2
A
or /WE = V
IL
or /LB = V
IH
or /UB = V
IH
Operating supply current
I
CC
/CS = V
IL
,
Cycle time : 12 ns
230
mA
I
I/O
= 0 mA,
Cycle time : 15 ns
200
Minimum cycle time
Cycle time : 17 ns
190
Cycle time : 20 ns
180
Standby supply current
I
SB
/CS = V
IH
, V
IN
= V
IH
or V
IL
50
mA
I
SB1
/CS
V
CC
0.2 V,
10
V
IN
0.2 V or V
IN
V
CC
0.2 V
High level output voltage
V
OH
I
OH
= 4.0 mA
2.4
V
Low level output voltage
V
OL
I
OL
= +8.0 mA
0.4
V
Remarks 1. V
IN
: Input voltage
V
I/O
: Input / Output voltage
2. These DC characteristics are in common regardless of package types.
Capacitance (T
A
=
25
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
6
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
10
pF
Remarks 1. V
IN
: Input voltage
V
I/O
: Input / Output voltage
2. These parameters are periodically sampled and not 100% tested.
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