1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D12912EJ3V0DS00 (3rd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
!
!
!
!
shows major revised points.
DESCRIPTION
The 2SK3053 is N-Channel MOS Field Effect Transistor
designed for high current switching applications in consumer
instruments.
FEATURES
Low On-State Resistance
R
DS(on)1
= 45 m
MAX. (V
GS
= 10 V, I
D
= 13 A)
R
DS(on)2
= 70 m
MAX. (V
GS
= 4.0 V, I
D
= 13 A)
Low C
iss
: C
iss
= 790 pF TYP.
Built-in Gate Protection Diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS(AC)
20
V
Gate to Source Voltage
V
GSS(DC)
+20,
-
10
V
Drain Current (DC)
I
D(DC)
25
A
Drain Current (Pulse)
Note1
I
D(pulse)
75
A
Total Power Dissipation (T
C
= 25C)
P
T
30
W
Total Power Dissipation (T
A
= 25C)
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
12.5
A
Single Avalanche Energy
Note2
E
AS
15.6
mJ
Notes 1. PW
10
s, Duty cycle
1 %
2. Starting T
ch
= 25 C, V
DD
= 30 V
,
R
G
= 25
,
V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3053
Isolated TO-220
(Isolated TO-220)
!
Data Sheet D12912EJ3V0DS
2
2SK3053
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 13 A
28
45
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 13 A
46
70
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 13 A
8.0
16
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Input Capacitance
C
iss
V
DS
= 10 V
790
pF
Output Capacitance
C
oss
V
GS
= 0 V
240
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
100
pF
Turn-on Delay Time
t
d(on)
I
D
= 13 A
20
ns
Rise Time
t
r
V
GS
= 10 V
200
ns
Turn-off Delay Time
t
d(off)
V
DD
= 30 V
65
ns
Fall Time
t
f
R
G
= 10
95
ns
Total Gate Charge
Q
G
I
D
= 25 A
20
nC
Gate to Source Charge
Q
GS
V
DD
= 48 V
3.0
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
6.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 25 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 25 A, V
GS
= 0 V
40
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
45
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
!
!
!
Data Sheet D12912EJ3V0DS
3
2SK3053
TYPICAL CHARACTERISTICS (T
A
= 25 C
)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
5
10
15
20
25
35
30
I
D
- Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
1
10
100
I
D
- Drain Current - A
0.1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
T
C
= 25C
Single Pulse
1000
Po
wer Dissipation Limited
100
s
10
ms
100
ms
1 ms
PW
= 10
s
I
D(pulse)
I
D(DC)
R
DS(on)
Limited
(at V
GS
= 10 V)
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 4.17 C/W
R
th(ch-A)
= 62.5 C/W
!
Data Sheet D12912EJ3V0DS
4
2SK3053
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
0
1
2
3
4
5
V
DS
= 10 V
10
1
0.1
100
1000
T
A
=
-
50C
25C
75C
150C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
0
2.0
3.0
4.0
40
100
80
60
1.0
Pulsed
V
GS
=10 V
20
4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.1
1
10
100
10
100
0.1
1
Pulsed
V
DS
= 10 V
T
A
= 150C
75C
25C
-
50C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
0
10
20
75
25
50
I
D
= 13 A
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
25
10
1
0.1
50
75
100
Pulsed
0
V
GS
= 4.0 V
10 V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(th)
- Gate to Source Threshold Voltage - V
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
-
50
0
50
100
150
0
Data Sheet D12912EJ3V0DS
5
2SK3053
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
0
-
50
20
0
50
100
150
I
D
= 13 A
40
80
60
10 V
V
GS
= 4.0 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
V
GS
= 0 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
1
0.1
100
1000
10
100
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1.0
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
8
4
12
20
28
16
24
32
20
40
60
80
4
8
V
DD
= 48 V
30 V
12 V
V
DS
12
16
V
GS
I
D
= 25 A
Data Sheet D12912EJ3V0DS
6
2SK3053
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1
10
100
1 m
10 m
V
DD
= 30 V
V
GS
= 20 V
0 V
R
G
= 25
Starting T
ch
= 25C
10
100
0.1
I
AS
= 12.5 A
E
AS
= 15.6
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - C
Energy Derating Factor - %
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
V
DD
= 30 V
R
G
= 25
V
GS
= 20 V
0 V
I
AS
12.5 A
!
Data Sheet D12912EJ3V0DS
7
2SK3053
PACKAGE DRAWING
10.0
0.3
3.2
0.2
4.5
0.2
2.7
0.2
2.5
0.1
0.65
0.1
1.5
0.2
2.54
1.3
0.2
2.54
0.7
0.1
4
0.2
15.0
0.3
12.0
0.2
3
0.1
1
2 3
1.Gate
2.Drain
3.Source
13.5
MIN.
Isolated TO-220 (MP-45F)
Remark 1. This product is designed for consumer application and isn't suitable for automotive application.
2. The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Body
Diode
Source (S)
Drain (D)
Gate (G)
EQUIVALENT CIRCUIT
Gate
Protection
Diode
2SK3053
M8E 00. 4
The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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