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Электронный компонент: NDL7502P

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The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
PA1706
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
G13083EJ1V0DS00 (1st edition)
Date Published
January 1999 NS CP(K)
Printed in Japan
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Super Low on-resistance
R
DS(on)1
= 5.8 m
(TYP.) (V
GS
= 10 V, I
D
= 7.0 A)
R
DS(on)2
= 7.0 m
(TYP.) (V
GS
= 4.5 V, I
D
= 7.0 A)
R
DS(on)3
= 8.0 m
(TYP.) (V
GS
= 4.0 V, I
D
= 7.0 A)
Low C
iss
: C
iss
= 3000 pF (TYP.)
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1706G
Power SOP8
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C, All terminals are connected)
Drain to Source Voltage
Note1
V
DSS
30
V
Gate to Source Voltage
Note2
V
GSS
20
V
Drain Current (DC)
I
D(DC)
13
A
Drain Current (pulse)
Note3
I
D(pulse)
52
A
Total Power Dissipation (T
A
= 25C)
Note4
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to + 150
C
Notes 1. V
GS
= 0 V
2. V
DS
= 0 V
3. PW
10
s, Duty Cycle
1 %
4. Mounted on ceramic substrate of 1200 mm
2
x 0.7mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
1.27
0.12 M
6.0 0.3
4.4
0.40
+0.10
0.05
0.78 MAX.
0.05 MIN.
1.8 MAX.
1.44
0.8
0.5 0.2
0.15
+0.10
0.05
5.37 MAX.
0.10
1
4
8
5
1,2,3
4
5,6,7,8
; Source
; Gate
; Drain
Data Sheet G13083EJ1V0DS00
2
PA1706
ELECTRICAL CHARACTERISTICS (T
A
= 25C, All terminals are connected)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 7.0 A
5.8
7.8
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 7.0 A
7.0
10.0
m
R
DS(on)3
V
GS
= 4.0 V, I
D
= 7.0 A
8.0
12.0
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 7.0 A
10
22
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Input Capacitance
C
iss
V
DS
= 10 V
3000
pF
Output Capacitance
C
oss
V
GS
= 0 V
950
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
380
pF
Turn-on Delay Time
t
d(on)
I
D
= 7.0 A
40
ns
Rise Time
t
r
V
GS(on)
= 10 V
220
ns
Turn-off Delay Time
t
d(off)
V
DD
= 15 V
140
ns
Fall Time
t
f
R
G
= 10
90
ns
Total Gate Charge
Q
G
I
D
= 13 A
56
nC
Gate to Source Charge
Q
GS
V
DD
= 24 V
9
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
14
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 13 A, V
GS
= 0 V
0.8
V
Reverse Recovery Time
t
rr
43
ns
Reverse Recovery Charge
Q
rr
I
F
= 13 A, V
GS
= 0 V
di/dt = 100 A/
s
50
nC
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet G13083EJ1V0DS00
3
PA1706
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
2.8
2.4
2.0
1.6
1.2
0.8
0.4
Mounted on ceramic
substrate of
1200mm
0.7mm
2
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
0.1
1
10
100
1
10
100
T
A
= 25 C
Single Pulse
R
DS(on)
Limited
(@V
GS
=10 V)
I
D
(DC) = 13 A
I
D(pulse)
= 52 A
10 ms
DS
1 ms
100 ms
Power Dissipation Limited
Remark Mounted on ceramic substrate of 1200mm
2
0.7mm
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10 000
Mounted on ceramic
substrate of 1200mm
0.7mm
Single Pulse
Channel to Ambient
2
100
R
th(ch-a)
= 62.5C/W
Data Sheet G13083EJ1V0DS00
4
PA1706
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
0.01
1
10
100
Pulsed
0
3
4
1
2
T
A
= 125C
25C
V
DS
= 10 V
-25C
75C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
0.4
0.6
0.8
10
20
0.2
Pulsed
30
40
50
4.5 V
4.0 V
V
GS
= 10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|y
fs
| - Forward Transfer Admittance - S
V
DS
=10 V
Pulsed
1
1
10
1000
100
10
100
0.1
25C
75C
125C
TA =
-
25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
30
20
10
Pulsed
50
40
2
4
6
8
10
12 14
16
18
20
I
D
= 7.0 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
1
15
10
10
100
Pulsed
0
25
10 V
4.5 V
V
GS
= 4.0 V
5
20
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-40 -20
80
40
20
60
0
0
100 120 140 160
1.2
1.4
1.0
1.6
1.8
2.0
2.2
2.4
2.6
Data Sheet G13083EJ1V0DS00
5
PA1706
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
0
-40 -20
4
0
20 40
60 80 100 120 140 160
I
D
= 7.0 A
8
18
12
10
6
2
14
16
4.5 V
10 V
V
GS
= 4.0 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
0.1
0
1
10
1000
100
0.6
0.8
1.2
1.4
0.4
0.2
1.0
Pulsed
V
GS
=10 V
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
100
10
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
0.1
10
100
1 000
1
10
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
t
d(on)
t
f
t
r
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Diode - ns
1
0.1
10
1
10
100
1 000
100
di/dt = 100A/
V
GS
= 0 V
s
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
40
60
80
100
20
10
40
30
4
2
8
6
10
12
0
I
D
= 13 A
V
GS
V
DS
V
DD
= 24 V
15 V
6 V