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Электронный компонент: NDL7705P

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1998, 1999
MOS FIELD EFFECT TRANSISTOR






PA1814
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D13804EJ1V0DS00 (1st edition)
Date Published
June 1999 NS CP(K)
Printed in Japan
The mark
5
5
5
5
shows major revised points.
DESCRIPTION
The
PA1814 is a switching device which can be
driven directly by a 4
V power source.
The
PA1814 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 4
V power source
Low on-state resistance
R
DS(on)1
= 16 m
MAX. (V
GS
= 10 V, I
D
= 3.5 A)
R
DS(on)2
= 24 m
MAX. (V
GS
= 4.5 V, I
D
= 3.5 A)
R
DS(on)3
= 27 m
MAX. (V
GS
= 4.0 V, I
D
= 3.5 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1814GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage
V
DSS
30
V
Gate to Source Voltage
V
GSS
20
V
Drain Current (DC)
I
D(DC)
7.0
A
Drain Current (pulse)
Note1
I
D(pulse)
28
A
Total Power Dissipation
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1
%
2. Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1
4
8
5
6.4 0.2
4.4 0.1
1.0 0.2
0.145

0.055
0.1
1, 5, 8
: Drain
2, 3, 6, 7: Source
4
: Gate
0.8 MAX.
3.15 0.15
3.0 0.1
0.65
0.10 M
0.27
+0.03
0.08
0.25
0.5
3
+5
3
0.6
+0.15
0.1
1.2 MAX.
0.10.05
1.00.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
5
Data Sheet D13804EJ1V0DS00
2






PA1814
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1 mA
1.0
1.7
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 3.5
A
3
14
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 3.5
A
12
16
m
R
DS(on)2
V
GS
= 4.5
V, I
D
= 3.5
A
18
24
m
R
DS(on)3
V
GS
= 4.0
V, I
D
= 3.5
A
20
27
m
Input Capacitance
C
iss
V
DS
= 10
V
2180
pF
Output Capacitance
C
oss
V
GS
= 0
V
658
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
303
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15
V
30
ns
Rise Time
t
r
I
D
= 3.5
A
140
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= 10
V
97
ns
Fall Time
t
f
R
G
= 10
86
ns
Total Gate Charge
Q
G
V
DS
= 24
V
38
nC
Gate to Source Charge
Q
GS
I
D
= 7.0
A
5.9
nC
Gate to Drain Charge
Q
GD
V
GS
= 10
V
8.5
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 7.0
A, V
GS
= 0
V
0.79
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
5
Data Sheet D13804EJ1V0DS00
3






PA1814
TYPICAL CHARACTERISTICS (T
A
= 25 C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Der
ating F
actor - %
T
A
- Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
-
10
-
100
I
D
- Drain Current - A
-
1
V
DS
- Drain to Source Voltage - V
-
100
-
10
-
1
-
0.1
-
0.01
-
0.1
PW
= 1 m
s
100 m
s
10
ms
R
DS(on)
Limited
(@V
GS
=
10
V)
I
D
(pulse)
I
D
(DC)
DC
T
A
= 25C
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
2
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
-
0.2
-
0.8
-
1.0
-
0.4
-
0.6
-
5
-
15
-
20
-
10
0
-
25
-
4.5 V
-
4.0 V
V
GS
=
-
10 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
-
100
-
10
-
1
-
0.1
-
0.01
-
0.001
-
0.0001
-
0.00001
-
0.5
-
1.5
-
2.5
-
3.5
V
DS
=
-
10 V
T
A
= 125C
75C
T
A
= 25C
-
25C
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=
-
10
V
I
D
=
-
1
mA
-
50
0
150
50
-
1.0
100
-
1.5
-
2.0
-
1
-
10
-
0.01
0.01
0.1
1
10
100
-
0.1
V
DS
=
-
10
V
-
100
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
T
A
=
-
25C
25C
75C
125C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
5
Data Sheet D13804EJ1V0DS00
4






PA1814
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
-
1
-
0.1
-
0.01
-
10
-
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
15
30
25
35
20
V
GS
=
-
4.0 V
T
A
= 125C
75C
-
25C
25C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
-
1
-
0.1
-
0.01
-
10
-
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
10
20
30
V
GS
=
-
4.5 V
T
A
= 125C
75C
25C
-
25C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
-
1
-
0.1
-
0.01
-
10
-
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
10
20
5
15
25
V
GS
=
-
10 V
T
A
= 125C
75C
25C
-
25C
-
50
25
20
15
10
5
30
0
50
100
150
R
DS (on)
- Drain to Source On-state Resistance - m
Tch - Channel Temperature - C
I
D
=
-
3.5 A
V
GS
=
-
4.0 V
-
4.5 V
-
10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
10
20
30
40
50
-
4
-
8
-
12
-
16
-
20
R
DS (on)
- Drain to Source On-state Resistance - m
V
GS
- Gate to Source Voltage - V
I
D
=
-
3.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
-
10
-
1
-
100
1000
10000
100
10
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
DS
- Drain Source Voltage - V
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Data Sheet D13804EJ1V0DS00
5






PA1814
-
0.1
-
1
-
10
I
D
- Drain Current - A
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
1000
100
10
td
(off)
td
(on)
tf
tr
SWITCHING CHARACTERISTICS
1
V
DD
=
-
15 V
V
GS(on)
=
-
10 V
R
G
= 10
0.01
0.1
1
100
10
0.6
0.4
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Source to Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
Q
g
- Gate Charge - nC
0
20
10
30
35
40
15
5
25
DYNAMIC INPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
=
-
7.0 A
2
4
6
8
10
12
V
DD
=
-
24 V
-
15 V
-
6 V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(ch-A)
- Transient Thermal Resistance - C/
W
10
0.1
1
1000
100
0.01
0.001
0.1
1
10
1000
100
Mounted on ceramic
substrate of
50 cm
2
x
1.1 mm
Single Pulse
62.5C/W
Data Sheet D13804EJ1V0DS00
6






PA1814
[MEMO]
Data Sheet D13804EJ1V0DS00
7






PA1814
[MEMO]






PA1814
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8