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HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1999
The mark shows major revised points.
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
Gate Length: Lg
0.20
m
Gate Width : Wg = 160
m
ORDERING INFORMATION (PLAN)
Part Number
Supplying Form
Marking
NE3210S01-T1
Tape & reel 1 000 pcs./reel
NE3210S01-T1B
Tape & reel 4 000 pcs./reel
K
Remark For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
4.0
V
Gate to Source Voltage
V
GS
3.0
V
Drain Current
I
D
IDSS
mA
Gate Current
I
G
100
A
Total Power Dissipation
P
tot
165
mW
Channel Temperature
T
ch
125
C
Storage Temperature
T
stg
65 to +125
C
RECOMMENDED OPERATING CONDITIONS (T
A
= +25C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
1
2
3
V
Drain Current
I
D
5
10
15
mA
Input Power
P
in
0
dBm
Data Sheet P14067EJ2V0DS00
2
NE3210S01
ELECTRICAL CHARACTERISTICS (T
A
= +25 C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
I
GSO
V
GS
= 3 V
0.5
10
A
Saturated Drain Current
I
DSS
V
DS
= 2 V, V
GS
= 0 V
15
40
70
mA
Gate to Source Cut off Voltage
V
GS (off)
V
DS
= 2 V, I
DS
= 100
A
0.2
0.7
2.0
V
Transconductance
g
m
V
DS
= 2 V, I
DS
= 10 mA
40
55
mS
Noise Figure
NF
0.35
0.45
dB
Associated Gain
G
a
V
DS
= 2 V, I
DS
= 10 mA
f = 12 GHz
12.0
13.5
dB
Data Sheet P14067EJ2V0DS00
3
NE3210S01
TYPICAL CHARACTERISTICS (T
A
= +25 C)
250
200
150
100
50
0
50
100
150
200
250
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(
C)
Total Power Dissipation P
tot
(mW)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage V
DS
(V)
100
80
60
40
20
0
2.0
1.0
Drain Current I
D
(mA)
V
GS
= 0 V
0.2 V
0.4 V
0.6 V
60
40
20
0
2.0
1.0
0
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(mA)
Frequency f (GHz)
Maximum Stable Gain MSG. (dB)
Maximum Available Gain MAG. (dB)
Forward Insertion Gain |S
21s
|
2
(dB)
V
DS
= 2 V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
20
16
12
8
4
1
30
2
4
20
6
8 10
14
V
DS
= 2 V
I
D
= 10 mA
MSG.
MAG.
|S
21S
|
2
Data Sheet P14067EJ2V0DS00
4
NE3210S01
Gain Calculations
S
21
MAG. =
S
12
k
k
2
1
= S
11
S
22
S
21
S
12
S
21
MSG. =
S
12
1 + |
|
2
|S
11
|
2
|S
22
|
2
K =
2 |S
12
| |S
21
|
Frequency f (GHz)
1.0
0.5
0
1
30
2
Noise Figure NF (dB)
V
DS
= 2 V
I
D
= 10 mA
4
20
6
8 10
14
24
20
16
12
8
4
Associated Gain G
a
(dB)
Noise Figure NF (dB)
Associated Gain G
a
(dB)
Drain Current I
D
(mA)
G
a
NF
G
a
NF
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
15
14
13
12
11
2.0
1.5
1.0
0.5
30
20
10
0
V
DS
= 2 V
f = 12 GHz
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
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