SUPER LOW NOISE HJ FET
NE33200
PART NUMBER
NE33200
PACKAGE OUTLINE
00 (Chip)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
OPT
1
Noise Figure, V
DS
= 2 V, I
D
= 10 mA,
f = 4 GHz
dB
0.35
f = 12 GHz
dB
0.75
1.0
G
A
1
Associated Gain, V
DS
= 2 V, I
D
= 10 mA,
f = 4 GHz
dB
15.0
f = 12 GHz
dB
9.5
10.5
P
1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
dBm
11.2
V
DS
= 2 V, I
DS
= 20 mA
dBm
12.0
G
1dB
Gain at P
1dB
, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
dB
11.8
V
DS
= 2 V, I
DS
= 20 mA
dB
12.8
I
DSS
Saturated Drain Current, V
DS
= 2 V, V
GS
= 0 V
mA
15
40
80
V
P
Pinch-off Voltage, V
DS
= 2 V, I
D
= 100
A
V
-2.0
-0.8
-0.2
g
m
Transconductance, V
DS
= 2 V, I
D
= 10 mA
mS
45
70
I
GSO
Gate to Source Leakage Current, V
GS
= -5 V
A
0. 5
10
R
TH(CH-C)2
Thermal Resistance (Channel to Case)
C/W
240
Notes:
1.RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for
10 samples.
2. Chip mounted on infinite heat sink.
DESCRIPTION
The NE33200 is a Hetero-Junction FET chip that utilizes the
junction between Si-doped AlGaAs and undoped InGaAs to
create a two-dimensional electron gas layer with very high
electron mobility. Its excellent low noise figure and high
associated gain make it suitable for commercial and industrial
applications.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
FEATURES
VERY LOW NOISE FIGURE:
0.75 dB typical at 12 GHz
HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
GATE LENGTH: 0.3
m
GATE WIDTH: 280
m
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Frequency, f (GHz)
Optimum Noise Figure, NF
OPT
(dB)
Associated Gain, G
A
(dB)
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
California Eastern Laboratories
4
3.5
3
2.5
2
1.5
1
0.5
0
Ga
NF
1 10 30
24
21
18
15
12
9
6
3
0
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
4.0
V
GS
Gate to Source Voltage
V
-3.0
I
DS
Drain Current
mA
I
DSS
I
GRF
Gate Current
A
280
P
IN
RF Input (CW)
dBm
15
T
CH
Channel Temperature
C
175
T
STG
Storage Temperature
C
-65 to +175
P
T2
Total Power Dissipation
mW
240
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation, (P
T
) mW
Ambient Temperature, T
A
(
C)
Drain Current, I
DS
(mA)
FREQ.
NF
OPT
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
1
0.29
21.3
0.82
8
0.39
2
0.31
18.3
0.81
17
0.36
4
0.35
15.3
0.76
41
0.33
6
0.42
13.5
0.71
63
0.30
8
0.52
12.2
0.64
77
0.27
10
0.63
11.3
0.55
95
0.24
12
0.75
10.5
0.48
112
0.22
14
0.9
9.9
0.41
130
0.19
16
1.05
9.3
0.37
144
0.18
18
1.25
8.8
0.35
164
0.15
20
1.5
8.3
0.37
180
0.13
22
1.8
7.9
0.38
-166
0.11
24
2.2
7.6
0.39
-154
0.10
26
2.6
7.3
0.40
-142
0.08
TYPICAL NOISE PARAMETERS
1
(T
A
= 25
C)
V
DS
= 2 V, I
DS
= 10 mA
Note:
1.Operation in excess of any one of these parameters may result in
permanent damage.
2.With chip mounted on infinite heat sink.
Drain Current, I
DS
(mA)
Noise Figure, NF (dB)
NOISE FIGURE and GAIN
vs. DRAIN CURRENT
V
DS
= 2 V, f = 12 GHz
Associated Gain, G
A
(dB)
Transconductance, g
m
(mS)
Note:
1.Noise Parameters include Bond Wires:
Gate:
Total 2 wires, 1 per bond pad 0.0129" (327
m)
long each wire.
Drain:
Total 2 wires, 1 per bond pad 0.0118" (300
m)
long each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180
m)
long each wire.
Wire:
0.0007" (17.8
m) dia. gold.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TRANSCONDUCTANCE vs. DRAIN CURRENT
V
DS
= 2.0 V
Drain to Source Voltage, V
DS
(V)
Drain Current, I
DS
(mA)
NE33200
0
0
50
100
150
200
250
50
100 117
150
200
250
Mounted on
Infinite
Heat sink
G
A
N
F
2.0
1.6
1.2
0.8
0.4
0
0
5
10
15
20
25
30
35
40
6
8
10
12
14
16
Tuned at each I
DS
Tuned at 10 mA only
50
40
30
20
10
0
0
0.5
-0.1 V
-0.2 V
-0.3 V
-0.4 V
-0.5 V
1
1.5
2
2.5
3
V
GS
= 0 V
120
100
80
60
40
20
0
0
10
20
30
40
50
TYPICAL COMMON SOURCE SCATTERING PARAMETERS
1
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
K
S
21
MAG
2
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
(dB)
FREQUENCY
S
11
S
21
S
12
S
22
K
S
21
MAG
2
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
(dB)
0.1
.999
-1.8
5.854
178.8
.003
87.5
.631
-1.4
0.2
.999
-3.6
5.850
177.2
.005
86.2
.632
-2.5
0.5
.998
-8.9
5.846
173.5
.011
84.6
.632
-6.1
1.0
.994
-17.7
5.797
167.0
.022
82.0
.628
-12.1
2.0
.974
-34.6
5.614
154.1
.044
71.2
.618
-23.8
3.0
.940
-49.9
5.299
142.1
.063
62.4
.598
-34.9
4.0
.903
-63.2
4.919
131.1
.079
52.5
.578
-43.9
5.0
.861
-75.1
4.512
121.4
.089
46.4
.556
-51.5
6.0
.822
-85.9
4.210
112.5
.099
39.7
.532
-59.1
7.0
.798
-93.2
3.900
105.5
.103
35.2
.528
-60.8
8.0
.750
-102.2
3.642
97.8
.103
27.7
.495
-65.1
9.0
.728
-110.1
3.420
89.9
.104
23.9
.479
-69.1
10.0
.724
-117.8
3.304
83.8
.109
21.9
.468
-74.6
12.0
.722
-132.6
3.045
69.8
.115
14.7
.433
-86.7
14.0
.724
-146.6
2.876
57.2
.120
4.9
.398
-101.2
16.0
.714
-158.3
2.668
46.2
.125
-2.4
.376
-112.4
18.0
.695
-169.5
2.483
35.7
.132
-9.8
.373
-119.5
20.0
.676
-179.4
2.296
26.5
.143
-10.5
.394
-124.8
22.0
.665
168.5
2.115
13.7
.153
-14.9
.401
-130.3
24.0
.648
158.1
1.897
0.4
.163
-17.7
.388
-139.5
26.0
.632
147.8
1.817
-12.1
.167
-19.9
.378
-148.9
26.5
.641
145.0
1.832
-14.3
.168
-18.3
.372
-152.5
0.1
.999
-2.0
7.441
178.7
.002
87.9
.484
-1.1
0.2
.999
-3.9
7.436
177.1
.003
86.5
.483
-2.7
0.5
.997
-9.5
7.422
173.1
.009
84.7
.483
-6.5
1.0
.991
-18.8
7.317
166.4
.017
82.2
.482
-12.8
2.0
.968
-36.6
7.041
153.1
.032
72.3
.472
-24.8
3.0
.929
-52.7
6.570
140.6
.047
63.9
.458
-36.3
4.0
.889
-66.4
6.058
129.9
.059
56.1
.447
-45.3
5.0
.846
-78.7
5.518
120.2
.067
50.5
.431
-52.3
6.0
.805
-89.3
5.083
111.5
.076
44.2
.411
-60.0
7.0
.777
-98.8
4.686
103.6
.083
39.5
.403
-64.1
8.0
.728
-107.8
4.335
96.3
.082
32.5
.375
-67.7
9.0
.709
-115.5
4.046
88.8
.084
30.6
.365
-70.9
10.0
.708
-123.2
3.879
82.9
.089
30.2
.359
-76.6
12.0
.707
-137.7
3.551
69.6
.097
23.8
.333
-89.5
14.0
.710
-151.1
3.293
57.0
.102
15.7
.311
-105.0
16.0
.704
-162.7
3.055
46.0
.110
8.8
.294
-117.1
18.0
.680
-173.2
2.835
35.9
.118
2.4
.300
-124.4
20.0
.667
177.0
2.598
27.1
.134
-0.5
.320
-128.7
22.0
.661
164.9
2.384
15.4
.149
-4.0
.336
-133.8
24.0
.654
153.8
2.141
3.1
.162
-6.8
.327
-141.0
26.0
.639
144.0
2.020
-9.2
.171
-10.4
.310
-150.5
26.5
.641
142.2
2.059
-11.6
.175
-11.7
.308
-156.2
0.06
17.4
35.7
0.04
17.4
33.9
0.04
17.4
29.2
0.04
17.3
26.3
0.09
16.9
23.4
0.16
16.3
21.4
0.23
15.6
20.1
0.31
14.8
19.1
0.38
14.1
18.2
0.44
13.4
17.5
0.59
12.7
17.2
0.65
12.1
16.8
0.63
11.8
16.4
0.64
11.0
15.6
0.65
10.4
15.1
0.67
9.7
14.4
0.71
9.1
13.8
0.69
8.3
12.9
0.67
7.5
12.0
0.70
6.6
11.2
0.75
6.1
10.7
0.72
6.3
10.7
0.05
15.3
32.9
0.04
15.4
30.7
0.02
15.3
27.3
0.00
15.3
24.2
0.04
15.0
21.1
0.09
14.5
19.2
0.17
13.8
17.9
0.23
13.1
17.0
0.29
12.5
16.3
0.35
11.8
15.8
0.48
11.2
15.5
0.55
10.7
15.2
0.54
10.4
14.8
0.56
9.7
14.2
0.57
9.2
13.8
0.61
8.5
13.3
0.66
7.9
12.7
0.66
7.2
12.1
0.68
6.5
11.4
0.75
5.5
10.7
0.79
5.2
10.4
0.76
5.3
10.4
See notes on back page.
NE33200
V
DS
= 2 V, I
DS
= 30 mA
V
DS
= 2 V, I
DS
= 10 mA
j100
j50
j25
j10
-j100
-j50
-j25
-j10
0
26.5 GHz
S
11
.1 GHz
S
22
.1 GHz
26.5 GHz
10
50
25
100
+90
+60
+30
+120
-150
-120
-90
-60
-30
0
S
21
.1 GHz
S
12
.1 GHz
26.5 GHz
+150
26.5 GHz
TYPICAL COMMON SOURCE, REVERSE CHANNEL SCATTERING PARAMETERS
1
(T
A
= 25
C)
0.1
0.998
-0.8
1.492
-0.5
.003
93.9
.586
179.5
0.2
0.999
-1.6
1.490
-1.3
.005
86.2
.587
179.3
0.5
0.998
-3.8
1.489
-3.1
.013
89.7
.585
177.7
1.0
1.000
-7.7
1.480
-5.9
.024
88.7
.588
175.6
2.0
0.998
-15.3
1.480
-11.9
.051
80.6
.585
171.0
3.0
0.997
-22.
1.474
-17.9
.075
78.3
.582
167.0
4.0
0.992
-29.5
1.464
-23.8
.101
73.5
.577
162.7
5.0
0.987
-36.3
1.439
-29.2
.127
69.2
.573
158.5
6.0
0.979
-42.9
1.428
-34.7
.151
64.8
.575
154.5
7.0
0.965
-48.9
1.390
-40.2
.172
59.2
.573
151.1
8.0
0.960
-55.1
1.379
-46.4
.191
55.5
.573
147.3
9.0
0.955
-60.7
1.320
-52.2
.212
51.8
.574
143.4
10.0
0.954
-66.6
1.323
-56.2
.243
47.2
.577
137.8
12.0
0.968
-77.1
1.298
-66.4
.295
36.7
.578
125.1
14.0
0.982
-87.3
1.301
-75.6
.348
24.6
.571
111.9
16.0
0.986
-98.1
1.302
-85.8
.395
12.1
.530
99.8
18.0
0.970
-108.8
1.268
-95.9
.453
1.1
.493
90.0
20.0
0.962
-120.3
1.199
-104.0
.484
-7.5
.465
80.7
22.0
0.978
-130.6
1.119
-113.2
.518
-16.8
.467
67.9
24.0
1.039
-141.1
1.071
-123.5
.545
-23.7
.497
55.5
26.0
1.109
-152.1
1.076
-137.0
.574
-33.5
.485
40.8
26.5
1.112
-154.7
1.068
-140.6
.569
-36.8
.477
37.3
0.25
3.5
27.0
0.12
3.5
24.7
0.05
3.4
20.6
-0.03
3.4
17.9
0.02
3.4
14.6
0.01
3.4
12.9
0.04
3.3
11.6
0.06
3.2
10.5
0.09
3.1
9.7
0.15
2.9
9.1
0.17
2.8
8.6
0.18
2.4
7.9
0.16
2.4
7.4
0.13
2.3
6.4
0.11
2.3
5.7
0.14
2.3
5.2
0.21
2.1
4.5
0.20
1.6
3.9
0.14
1.0
3.0
-0.00
0.6
2.9
-0.11
0.6
2.7
-0.11
0.6
2.7
FREQUENCY
S
11
S
21
S
12
S
22
K
S
21
MAG
2
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
(dB)
V
DS
= -2 V, I
DS
= 10 mA
0.1
0.999
-0.7
1.574
-0.3
.002
135.9
.687
179.7
0.2
1.000
-1.5
1.575
-1.3
.005
96.9
.686
179.2
0.5
0.998
-3.6
1.569
-2.9
.012
87.2
.687
177.8
1.0
0.997
-7.4
1.565
-6.1
.022
87.9
.685
175.9
2.0
0.998
-14.7
1.562
-12.0
.043
82.0
.684
171.3
3.0
0.998
-21.6
1.558
-17.8
.066
79.8
.685
167.5
4.0
0.993
-28.3
1.550
-23.6
.087
75.1
.680
164.0
5.0
0.990
-34.8
1.525
-28.9
.110
71.7
.678
159.7
6.0
0.982
-41.3
1.518
-34.4
.132
67.0
.680
156.3
7.0
0.966
-48.0
1.472
-39.7
.155
61.7
.677
153.1
8.0
0.964
-54.4
1.463
-46.0
.172
57.8
.680
149.6
9.0
0.961
-59.9
1.395
-52.0
.193
55.0
.684
145.7
10.0
0.961
-65.9
1.401
-56.2
.220
51.0
.690
140.6
12.0
0.974
-76.3
1.376
-65.7
.268
40.8
.700
128.7
14.0
0.990
-86.5
1.378
-75.6
.319
28.9
.696
116.0
16.0
0.998
-97.1
1.383
-85.8
.364
17.1
.651
104.3
18.0
0.985
-107.9
1.350
-96.1
.417
6.0
.612
95.2
20.0
0.982
-119.1
1.273
-104.0
.448
-2.0
.582
87.1
22.0
0.995
-129.7
1.173
-112.5
.485
-11.7
.582
74.2
24.0
1.056
-140.0
1.121
-122.6
.513
-18.5
.611
61.8
26.0
1.132
-150.8
1.118
-135.6
.537
-27.8
.606
48.3
26.5
1.123
-153.5
1.119
-139.9
.539
-30.6
.584
45.2
FREQUENCY
S
11
S
21
S
12
S
22
K
S
21
MAG
2
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
(dB)
V
DS
= -2 V, I
DS
= 30 mA
See notes on back page.
-0.33
3.9
29.0
-0.09
3.9
25.0
0.06
3.9
21.2
0.02
3.9
18.5
0.01
3.9
15.6
-0.01
3.8
13.7
0.03
3.8
12.5
0.02
3.7
11.4
0.06
3.6
10.6
0.11
3.4
9.8
0.13
3.3
9.3
0.13
2.9
8.6
0.10
2.9
8.0
0.07
2.8
7.1
0.07
2.8
6.3
0.10
2.8
5.8
0.17
2.6
5.1
0.15
2.1
4.5
0.08
1.4
3.8
-0.07
1.0
3.4
-0.18
1.0
3.2
-0.15
1.0
3.2
j100
j50
j25
j10
-j100
-j50
-j25
0
26.5 GHz
S
22
.1 GHz
S
11
.1 GHz
26.5 GHz
10
25
50
100
+90
+60
+30
+120
-150
-120
-90
-60
-30
0
S
21
.1 GHz
S
12
.1 GHz
26.5 GHz
+150
+180
26.5 GHz
NE33200
MODEL RANGE
Frequency:
0.1 to 26.5 GHz
Bias:
V
DS
= 2 V, I
D
= 10, 20 mA
Date:
7/19/96
SCHEMATIC
NE33200
NE33200 LINEAR MODEL
LG
GATE
DRAIN
SOURCE
0.19
0.16
0.22
0.04
0.24
0.2
RG
RI
0.52
RS
0.19
LS
0.03
CDG
CGS
RDS
CDS
0.05
g
t
f= 281GHz
GGS
1E-5
CDC
0.065
RD
LD
Parameter
Units
capacitance
picofarads
inductance
nanohenries
resistance
ohms
conductance
millisiemans
UNITS
Parameters
2 V, 10 mA
2 V, 20 mA
g
73 mS
96 mS
t
2.5 pSec
3.5 pSec
RDS
220 ohms
160 ohms
BIAS DEPENDENT MODEL PARAMETERS
SCHEMATIC
NE33200
NE33200 NONLINEAR MODEL
LG
LD
RD
LS
0.03
RS
1
CRF X
10000
R COMP
270
SOURCE
Q1
0.17
0.08
5
GATE
DRAIN
2
1
3
Parameters
Q1
Parameters
Q1
BETA
0.0989
CGD
0
VTO
-0.6
KF
0
ALPHA
8
AF
1
LAMBDA
0.2
TNOM
27
THETA
2
0
XTI
3
TAU
4e-12
EG
1.43
VBR
Infinity
VTOTC
0
IS
8e-14
BETATCE
0
N
1
FFE
1
VBI
1
FC
0.5
RC
Infinity
CRF
0
RD
0
RG
0
RS
0
RIN
0
CGSO
3
0.4e-12
CGDO
4
0.05e-12
DELTA1
0.3
DELTA2
5
0.5
CDS
0.16e-12
CGS
0
FET NONLINEAR MODEL PARAMETERS
(1)
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) THETA
B
(3) CGSO
CGS
(4) CGDO
CGD
(5) DELTA2
VDELTA
MODEL RANGE
Frequency:
0.1 to 10 GHz
Bias:
V
DS
= 2 V, I
D
= 10 mA to 20 mA
Date:
8/6/96
Parameter
Units
capacitance
picofarads
inductance
nanohenries
resistance
ohms
UNITS
CHIP DIMENSIONS
(Units in
m)
NE33200 (CHIP)
Chip Thickness: 140
m typical
Note: All dimensions are typical unless otherwise specified
Notes:
1.S-Parameters include Bond Wires:
Gate:
Total 2 wires, 1 per bond pad 0.0129" (327
m) long, each wire.
Drain:
Total 2 wires, 1 per bond pad 0.0118" (300
m) long, each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180
m) each wire.
Wire:
0.0007" (17.8
m) dia. gold.
2.Gain Calculations:
MAG = Maximum Available gain
MSG = Maximum Stable Gain
PART NUMBER
IDSS RANGE (mA)
NE33200
Standard (15 - 80)
NE33200N
15 - 50
NE33200M
50 - 80
ORDERING INFORMATION
NE33200
D
D
G
G
S
S
45
31
47
25
13
400
40 mm
120
56
66
56
88
61
350
35
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + | | - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
Internet: http://WWW.CEL.COM
04/12/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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