1995
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for GPS,
TVRO and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., G
a
= 15.0 dB TYP. at f = 4 GHz
Gate Width: W
g
= 280
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING
LEAD LENGTH
FORM
NE33284A-SL
STICK
L = 1.7 mm MIN.
NE33284A-T1
Tape & reel
L = 1.0
0.2 mm
NE33284A-T1A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DS
4.0
V
Gate to Source Voltage
V
GS
3.0
V
Drain Current
I
D
I
DSS
mA
Total Power Dissipation
P
tot
165
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
65 to +150
C
RECOMMENDED OPERATING CONDITION (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
3
V
Drain Current
I
D
10
20
mA
Input Power
P
in
0
dBm
Document No. P10874EJ2V0DS00 (2nd edition)
(Previous No. TD-2369)
Date Published October 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(Unit: mm)
1.78 0.2
1
L
1.78 0.2
L
4
2
L
L
3
0.5 TYP.
0.5 TYP.
U
1.7 MAX.
0.1
1. Source
2. Drain
3. Source
4. Gate
NE33284A
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
I
GSO
0.5
10
A
V
GS
= 3 V
Saturated Drain Current
I
DSS
15
40
80
mA
V
DS
= 2 V, V
GS
= 0
Gate to Source Cutoff Voltage
V
GS(off)
0.2
0.8
2.0
V
V
DS
= 2 V, I
D
= 100
A
Transconductance
g
m
45
70
mS
V
DS
= 2 V, I
D
= 10 mA
Noise Figure
NF
0.75
1.0
dB
f = 12 GHz
V
DS
= 2 V
0.35
0.45
f = 4 GHz
I
D
= 10 mA
Associated Gain
G
a
9.5
10.5
dB
f = 12 GHz
13.0
15.0
f = 4 GHz
PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with AlGaAs shottky barrier gate.
NE33284A
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
250
200
150
100
50
0
50
100
150
200
250
T
A
Ambient Temperature C
P
tot
Total Power Dissipation mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
50
40
30
20
10
1.0
0
V
GS
Gate to Source Voltage V
I
D
Drain Current mA
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
2.0
0
V
DS
= 2 V
2
30
f Frequency GHz
1
4
6
8 10
14
20
24
20
16
12
8
| S
21s
|
2
Forward Insertion Gain dB
4
MAG. Maximum Available Gain dB
MSG. Maximum Stable Gain dB
V
DS
= 2 V
I
D
= 10 mA
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
0
1
2
3
4
5
V
DS
Drain to Source Voltage V
50
40
30
20
10
I
D
Drain Current mA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 0 V
0.2 V
0.4 V
0.6 V
| IS
21s
|
2
MSG.
MAG.
Gain Calculations
MSG.
=
|
|
|
|
S
S
21
12
K
1 |
|
| S
|
| S
|
2 | S
|| S
|
2
11
2
22
2
12
21
=
+
-
-
MAG.
| S
|
| S
|
(K
K
1)
21
12
2
=
-
=
-
S
S
S
S
11
22
21
12
NE33284A
4
S-Parameters
V
DS
= 2 V, I
D
= 10 mA
START 500 MHz, STOP 18 GHz, STEP 500 MHz
S
11
1.0
0.5
0
0.5
1.0
2.0
5
4
1.0
2.0
2.0
0.5
2
1
R
max
. = 1
3
S
12
180
90
45
0
+45
R
max
. = 0.25
3
4
5
+135
135
Marker
1:
2:
3:
4:
5:
4 GHz
8 GHz
12 GHz
16 GHz
18 GHz
S
22
1.0
0.5
0
0.5
1.0
2.0
2.0
2
1
R
max
. = 1
3
S
21
180
90
45
0
+45
R
max
. = 7.5
1
2
4
+135
135
+90
+90
3
1
2
5
5
4
NE33284A
5
MAG. AND ANG.
V
DS
= 2 V, I
D
= 10 mA
FREQUENCY
S
11
S
21
S
12
S
22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
(deg.)
(deg.)
(deg.)
(deg.)
500.0000
.916
9.3
5.239
170.8
.011
83.5
.618
7.0
1000.0000
.903
17.2
5.144
162.6
.021
76.8
.609
13.8
1500.0000
.912
26.2
5.206
154.0
.032
71.7
.598
20.5
2000.0000
.903
34.3
5.147
146.4
.041
66.1
.580
27.6
2500.0000
.900
44.2
5.125
136.7
.050
60.3
.563
34.0
3000.0000
.876
53.4
5.012
127.3
.059
55.0
.541
40.4
3500.0000
.845
62.4
4.862
118.4
.065
49.9
.517
46.2
4000.0000
.811
70.6
4.683
110.7
.071
45.6
.493
52.4
4500.0000
.778
78.8
4.533
102.7
.076
41.7
.469
58.6
5000.0000
.754
86.7
4.378
95.2
.082
37.8
.447
65.1
5500.0000
.732
94.8
4.251
87.5
.086
33.7
.425
71.6
6000.0000
.707
102.7
4.093
80.0
.091
29.9
.405
78.3
6500.0000
.681
109.7
3.933
73.0
.092
26.6
.387
83.9
7000.0000
.652
116.3
3.760
66.1
.095
24.2
.372
89.3
7500.0000
.626
122.5
3.609
59.7
.098
21.2
.358
95.0
8000.0000
.599
128.1
3.480
53.6
.100
18.3
.344
101.1
8500.0000
.579
134.0
3.363
47.5
.103
16.3
.333
107.9
9000.0000
.558
139.9
3.250
41.7
.105
13.2
.322
115.2
9500.0000
.542
146.1
3.151
35.9
.108
10.8
.313
123.4
10000.0000
.533
152.1
3.068
30.5
.111
9.1
.311
130.5
10500.0000
.523
158.8
3.006
24.8
.114
6.7
.317
136.6
11000.0000
.511
164.7
2.942
18.6
.116
3.6
.330
144.7
11500.0000
.497
170.2
2.870
12.6
.119
.7
.338
151.0
12000.0000
.483
175.7
2.809
7.0
.119
1.4
.344
156.5
12500.0000
.466
179.0
2.742
.9
.123
3.1
.350
161.0
13000.0000
.444
173.7
2.678
4.8
.124
6.2
.356
166.5
13500.0000
.424
167.8
2.633
10.4
.129
9.1
.358
171.1
14000.0000
.406
162.0
2.562
16.1
.130
12.0
.363
177.3
14500.0000
.397
155.4
2.537
21.1
.134
14.4
.375
177.6
15000.0000
.389
148.8
2.502
26.7
.141
17.9
.384
170.9
15500.0000
.391
141.2
2.479
32.3
.140
21.7
.408
164.3
16000.0000
.392
133.9
2.448
38.0
.142
24.6
.421
158.1
16500.0000
.390
127.2
2.426
44.7
.145
29.2
.437
153.6
17000.0000
.382
119.9
2.395
51.3
.145
32.6
.448
148.2
17500.0000
.367
113.0
2.330
58.0
.149
36.6
.462
144.1
18000.0000
.345
106.0
2.273
64.6
.152
42.1
.471
139.4
NE33284A
6
AMP. PARAMETERS
FREQUENCY
GUmax.
GAmax.
| S
21
|
2
| S
12
|
2
K
Delay
Mason's U
G1
G2
MHz
dB
dB
dB
dB
nsec
dB
dB
dB
500.0000
24.43
14.39
39.32
.89
.045
24.564
7.96
2.09
1000.0000
23.59
14.23
33.35
.58
.045
23.761
7.35
2.01
1500.0000
23.98
14.33
29.82
.38
.048
25.082
7.72
1.93
2000.0000
23.36
14.23
27.79
.36
.042
25.247
7.35
1.78
2500.0000
23.08
14.19
26.11
.33
.054
27.129
7.23
1.66
3000.0000
21.84
14.00
24.62
.38
.053
27.788
6.33
1.50
3500.0000
20.54
13.74
23.80
.44
.049
27.293
5.45
1.35
4000.0000
19.29
13.41
22.92
.49
.043
26.733
4.67
1.21
4500.0000
18.25
13.13
22.38
.54
.044
26.904
4.04
1.08
5000.0000
17.44
12.83
21.74
.58
.042
28.524
3.65
.97
5500.0000
16.77
12.57
21.26
.61
.042
31.604
3.33
.86
6000.0000
16.02
12.24
20.86
.65
.042
35.307
3.00
.78
6500.0000
15.30
11.89
20.75
.71
.039
30.255
2.70
.70
7000.0000
14.55
11.50
20.46
.77
.039
29.316
2.40
.65
7500.0000
13.90
11.15
20.18
.82
.035
26.733
2.16
.59
8000.0000
13.31
10.83
20.01
.88
.034
24.067
1.93
.55
8500.0000
12.82
10.54
19.73
.91
.034
24.242
1.77
.51
9000.0000
12.33
10.24
19.59
.96
.033
22.480
1.62
.48
9500.0000
11.93
9.97
19.36
.99
.032
22.389
1.51
.45
10000.0000
11.63
9.74
19.09
.99
.030
23.563
1.45
.44
10500.0000
11.41
9.56
18.85
.98
.032
25.469
1.39
.46
11000.0000
11.18
9.37
18.73
.99
.035
26.884
1.31
.50
11500.0000
10.91
9.16
18.49
1.00
.033
27.948
1.23
.53
12000.0000
10.67
12.82
8.97
18.47
1.02
.031
25.233
1.16
.55
12500.0000
10.39
12.32
8.76
18.24
1.04
.034
24.117
1.06
.57
13000.0000
10.10
11.73
8.56
18.11
1.07
.032
21.495
.96
.59
13500.0000
9.87
11.41
8.41
17.79
1.08
.031
20.813
.86
.60
14000.0000
9.57
10.92
8.17
17.71
1.11
.032
18.944
.78
.61
14500.0000
9.49
10.95
8.09
17.48
1.09
.028
19.425
.74
.66
15000.0000
9.37
11.06
7.96
17.04
1.06
.031
20.693
.71
.69
15500.0000
9.40
11.35
7.89
17.11
1.03
.031
21.818
.72
.79
16000.0000
9.35
11.77
7.78
16.94
1.01
.032
23.233
.73
.85
16500.0000
9.34
7.70
16.77
.98
.037
26.251
.72
.92
17000.0000
9.25
7.59
16.77
.99
.036
22.793
.69
.98
17500.0000
9.01
7.35
16.53
.99
.037
20.955
.63
1.04
18000.0000
8.77
11.32
7.13
16.37
1.00
.037
19.097
.55
1.09
NE33284A
7
Noise Parameters
<TYPICAL CONSTANT NOISE FIGURE CIRCLE>
<
opt
. vs. frequency>
1.0
0.5
0
0.5
1.0
2.0
2.0
V
DS
= 2 V
I
D
= 10 mA
1.0
f = 4 HGz
opt.
1 dB
2 dB
1.5 dB
1.0
0.5
0
0.5
1.0
2.0
2.0
1.0
START 2 GHz, STOP 18 GHz, STEP 2 GHz
V
DS
= 2 V
I
D
= 10 mA
4
8
10
12
14
16
6
18
2
<Noise Parameters>
V
DS
= 2 V, I
D
= 10 mA
Freq (GHz)
NF
min
(dB)
G
a
(dB)
opt.
R
n
/50
Mag.
Ang. (deg.)
2.0
0.32
16.0
0.76
18
0.23
4.0
0.35
15.0
0.69
49
0.19
6.0
0.41
13.7
0.63
79
0.14
8.0
0.50
12.6
0.58
110
0.08
10.0
0.62
11.5
0.53
140
0.05
12.0
0.75
10.5
0.49
171
0.03
14.0
0.88
9.6
0.46
158
0.07
16.0
1.02
8.8
0.43
127
0.09
18.0
1.15
8.0
0.41
97
0.16
NE33284A
8
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (IEI-
1207)
[NE33284A]
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package's surface temperature: 230 C or below, Reflow
IR30-00
time: 30 seconds or below (210 C or higher), Number of reflow
process: 1, Exposure limit*: None
Partial heating method
Terminal temperature: 230 C or below, Flow time: 10 seconds or
below, Exposure limit*: None
*:
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Note: Do not apply more than a single process at once, except for "Partial heating method".
PRECAUTION:
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
NE33284A
9
[MEMO]
2
NE33284A
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
PDF 
ZIP