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GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER
NPN GaAs HBT
Document No. P14544EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
1999
FEATURES
For Low Noise & High Gain amplifiers
NF = 1.0 dB TYP. G
a
= 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, V
CE
= 2 V, I
C
= 3 mA, Z
S
= Z
L
= 50
)
OIP
3
= 15 dBm TYP. (@f = 2 GHz, V
CE
= 2 V, I
C
= 3 mA, Z
S
= Z
L
= 50
)
4-pin super minimold package
Grounded Emitter Transistor
ORDERING INFORMATION (PLAN)
Part Number
Package
Marking
Supplying Form
NE52118-T1
4-pin super minimold
V41
Embossed tape 8 mm wide.
Pin 3, pin 4 face to perforation side of the tape.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE52118)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Symbol
Ratings
Unit
Collector to Emitter Voltage
V
CEO
5.0
V
Collector to Base Voltage
V
CBO
3.0
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
7
mA
Base Current
I
B
0.3
mA
Total Power Dissipation
P
tot
30
mW
Junction Temperature
T
j
+125
C
Storage Temperature
T
stg
65 to +125
C
Preliminary Data Sheet P14544EJ1V0DS00
2
NE52118
RECOMMENDED OPERATING CONDITIONS (T
A
= +25 C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
V
CE
1.5
2.0
3.0
V
Collector Current
I
C
-
3
6
mA
ELECTRICAL CHARACTERISTICS (T
A
= +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Emitter to Base Leak Current
I
EBO
V
EBO
= 3 V
-
0.2
1.0
A
Collector to Base Leak Current
I
CBO
V
CBO
= 3 V
-
0.2
1.0
A
Collector to Emitter Leak
Current
I
CEO
V
CEO
= 5 V
-
0.5
2.0
A
DC current gain
h
FE
V
CE
= 2 V, I
C
= 3 mA
50
90
140
-
Base to Emitter Forward Voltage
V
FBE
I
BE
= 100
A
1.0
1.2
1.4
V
Base to Collector Forward
Voltage
V
FBC
I
BC
= 100
A
0.7
1.0
1.3
V
Noise Figure
NF
-
1.0
1.5
dB
Associated Gain
G
a
13.5
15
-
dB
Out Third-Order Distortion
Intercept Point
OIP
3
V
CE
= 2 V, I
C
= 3 mA,
f = 2 GHz,
Z
S
= Z
L
= 50
-
15
-
dBm
Noise Figure
NF
-
1.0
-
dB
Associated Gain
G
a
V
CE
= 2 V, I
C
= 5 mA,
f = 2 GHz, Z
S
= Z
L
= 50
-
16.3
-
dB
Preliminary Data Sheet P14544EJ1V0DS00
3
NE52118
TYPICAL CHARACTERISTICS (T
A
= +25
C)
DC CHARACTERISTICS
f = 2.0 GHz
V
CE
= 2 V
Z
S
= Z
L
= 50
10
8
6
4
2
0
Collector Current I
C
(mA)
0
0.5
1
1.5
DC Base Voltage V
BE
(V)
COLLECTOR CURRENT vs. DC BASE VOLTAGE
40
50
30
20
10
0
Total Power Dissipation P
T
(mW)
0
25
50
75
100
125
150
Ambient Temperature T
A
(
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
V
CE
= 2 V
6
G
a
NF
5
4
3
2
0
1
Noise Figure NF (dB)
Associated Gain G
a
(dB)
30
25
20
15
10
5
0
1
10
100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1
DC Current Gain h
FE
0.1
1
10
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
10
8
6
4
2
0
Collector Current I
C
(mA)
50 A
40 A
30 A
20 A
I
B
= 10 A
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
= 2 V
Preliminary Data Sheet P14544EJ1V0DS00
4
NE52118
GAIN CHARACTERISTICS
V
CE
= 2 V
I
C
= 3 mA
40
35
30
25
20
15
10
5
0
Insertion Power Gain lS
21e
l
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0.1
1.0
10.0
Frequency f (GHz)
INSERTION POWER GAIN, MAXIMUM AVAILABLE
POWER GAIN, MAXIMUM STABLE POWER GAIN vs.
FREQUENCY
30
25
20
15
10
5
0
Insertion Power Gain lS
21e
l
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
10
1
100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAXIMUM AVAILABLE
POWER GAIN, MAXIMUM STABLE POWER GAIN vs.
COLLECTOR CURRENT
30
25
20
15
10
5
0
Insertion Power Gain lS
21e
l
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
10
1
100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAXIMUM AVAILABLE
POWER GAIN, MAXIMUM STABLE POWER GAIN vs.
COLLECTOR CURRENT
lS
21e
l
2
MSG
lS
21e
l
2
MSG
lS
21e
l
2
MSG
MAG
f = 1 GHz
V
CE
= 2 V
f = 2 GHz
V
CE
= 2 V
Preliminary Data Sheet P14544EJ1V0DS00
5
NE52118
OUTPUT CHARACTERISTICS
25
20
15
10
Output Power P
out
(dBm)
Collector Current I
c
(mA)
5
P
out
P
out
I
c
P
out
I
c
P
out
I
c
I
c
0
5
120
100
80
60
40
20
0
25
20
10
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR CURRENT vs.
INPUT POWER
15
5
0
5
10
f = 900 MHz
V
CE
= 2 V
25
20
15
10
Output Power P
out
(dBm)
Collector Current I
C
(mA)
5
0
5
120
100
80
60
40
20
0
25
20
10
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR CURRENT vs.
INPUT POWER
15
5
0
5
10
f = 900 MHz
V
CE
= 3 V
25
20
15
10
Output Power P
out
(dBm)
Collector Current I
C
(mA)
5
0
5
120
100
80
60
40
20
0
25
20
10
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR CURRENT vs.
INPUT POWER
15
5
0
5
10
f = 2 GHz
V
CE
= 2 V
25
20
15
10
Output Power P
out
(dBm)
Collector Current I
C
(mA)
5
0
5
120
100
80
60
40
20
0
25
20
10
Input Power P
in
(dBm)
OUTPUT POWER, COLLECTOR CURRENT vs.
INPUT POWER
15
5
0
5
10
f = 2 GHz
V
CE
= 3 V
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