3.5 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800
TRANSMISSION AMPLIFIERS
California Eastern Laboratories
FEATURES
HIGH OUTPUT POWER:
32 dBm TYP at V
DS
= 3.5 V, I
DQ
= 400 mA,
f = 1.8 GHz, P
IN
= 25 dBm
HIGH POWER ADDED EFFICIENCY:
45% TYP at V
DS
= 3.5 V, I
DQ
= 400 mA,
f = 1.8 GHz, P
IN
= 25 dBm
HIGH LINEAR GAIN:
10 dB TYP at V
DS
= 3.5 V, I
DQ
= 400 mA,
f = 1.8 GHz, P
IN
= 10 dBm
SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
SINGLE SUPPLY:
2.8 to 6.0 V
NE5510279A
DESCRIPTION
The NE5510279A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.5 V GSM1800 handsets. Dies are manufactured using NEC's
NEWMOS technology (NEC's 0.6
m WSi gate lateral
MOSFET) and housed in a surface mount package. This de-
vice can deliver 32 dBm output power with 45% power added
efficiency at 1.8 GHz under the 3.5 V supply voltage, or can
deliver 31 dBm output power at 2.8 V by varying the gate
voltage as a power control function.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
DIGITAL CELLULAR PHONES
OTHERS
APPLICATIONS
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PART NUMBER
NE5510279A
PACKAGE OUTLINE
79A
SYMBOLS
CHARACTERISTICS
UNITS
MIN
TYP
MAX
TEST CONDITIONS
I
GSS
Gate to Source Leakage Current
nA
-
-
100
V
GSS
= 6.0 V
I
DSS
Drain to Source Leakage Current
nA
-
-
100
V
DSS
= 8.5 V
V
TH
Gate Threshold Voltage
V
1.0
1.35
2.0
V
DS
= 4.8 V, I
DS
= 1 mA
gm
Transconductance
S
-
1.50
-
V
DS
= 4.8 V, I
DS
1 = 500 mA, I
DS
2 = 700 mA
R
DS(ON)
Drain to Source On Resistance
-
-
0.27
-
V
GS
= 6.0 V, V
DS
= 0.5 V
BV
DSS
Drain to Source Breakdown Voltage
V
20
24
-
I
DSS
= 10 A
Source
Gate
Drain
4.2 Max
5.7 Max
4.4 Max
0.8
0.15
0.6
0.15
5.7 Max
0.4
0.15
Source
Gate
Drain
1.2 Max
1.0 Max
3.6
0.2
0.8 Max
0.9
0.2
0.2
0.1
1.5
0.2
Bottom View
NE5510279A
PERFORMANCE SPECIFICATIONS
(Peak measurement at Duty Cycle 1/8, 4.6 mS period, T
A
= 25C)
SYMBOLS
CHARACTERISTICS
UNITS
MIN
TYP
MAX
TEST CONDITIONS
G
L
Linear Gain
dB
--
10.0
--
f = 1.8 GHz, P
IN
= 10 dBm,
V
DS
= 3.5 V,I
DQ
= 400 mA
P
OUT(1)
Output Power
dBm
31.0
32.0
--
f = 1.8 GHz, P
IN
= 25 dBm,
I
OP(1)
Operating Current
mA
--
810
--
V
DS
= 3.5 V,I
DQ
= 400 mA
ADD(1)
Power Added Efficiency
%
37
45
P
OUT(2)
Maximum Output Power
dBm
--
32.6
--
f = 1.8 GHz, P
IN
= 25 dBm
I
OP(2)
Operating Current
mA
--
1,000
--
V
DS
= 3.5 V,V
GS
= 2.5 V
P
OUT(3)
Output Power at Lower Voltage
dBm
--
31.1
--
f = 1.8 GHz, P
IN
= 25 dBm
I
OP(3)
Operating Current
mA
--
880
--
V
DS
= 2.8 V,V
GS
= 2.5 V
G
L
Linear Gain
dB
--
10.0
--
f = 1.8 GHz, P
IN
= 10 dBm,
V
DS
= 4.8 V,I
DQ
= 400 mA
P
OUT
Output Power
dBm
--
35.0
--
f = 1.8 GHz, P
IN
= 28 dBm,
I
OP
Operating Current
mA
--
1,120
--
V
DS
= 4.8 V,I
DQ
= 400 mA
ADD
Power Added Efficiency
%
--
48
--
G
L
Linear Gain
dB
35.0
35.0
35.0
f = 1.8 GHz, P
IN
= 10 dBm,
V
DS
=6.0 V,I
DQ
= 400 mA
P
OUT
Output Power
dBm
37.0
f = 1.8 GHz, P
IN
= 30 dBm,
I
OP
Operating Current
mA
1,400
V
DS
=6.0 V,I
DQ
= 400 mA
ADD
Power Added Efficiency
%
49
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain Supply Voltage
V
8.5
V
GS
Gate Supply Voltage
V
6
I
D
Drain Current
A
1.0
I
D
Drain Current (Pulse Test)
2
A
2.0
P
IN
Input Power
3
dBm
30
P
T
Total Power Dissipation
W
2.4
T
CH
Channel Temperature
C
125
T
STG
Storage Temperature
C
-55 to +125
SYMBOLS
PARAMETERS
TEST CONDITIONS
UNITS
MIN
TYP
MAX
V
DS
Drain Supply Voltage
V
2.8
3.5
6.0
V
GS
Gate Supply Voltage
V
0
2.0
2.5
I
D
Drain Current (Pulse Test)
Duty Cycle 50%, Ton1ms
A
--
--
1.5
P
IN
Input Power
Frequency = 1.8 GHz, V
DS
= 3.5 V
dBm
24
25
26
f
Operating Frequency Range
GHz
1.6
--
2.0
T
OP
Operating Temperature
C
-30
25
85
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, t
on
=
1 ms.
3. Frequency = 1.8 GHz, V
DS
= 3.5 V.
PART NUMBER
QTY
NE5510279A-T1
1 Kpcs/Reel
ORDERING INFORMATION
Note:
Embossed tape 12 mm wide. Gate pin faces perforation side of the
tape.
RECOMMENDED OPERATING CONDITIONS
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE5510279A
Output Power, P
OUT
(dBm)
Output Power, P
OUT
(dBm)
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
Input Power, P
IN
(dBm)
Drain Current, I
DQ
(mA)
Drain Current, I
DS
(A)
DRAIN CURRENT vs. GATE TO
SOURCE VOLTAGE
Gate to Source Voltage, V
GS
(V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
2
4
6
8
10
12
14
16
V
GS
MAX = 10 V
Step = 1.0 V
10000
1000
100
10
1
1.0
1.5
2.0
2.5
3.0
V
DS
= 3.5 V
P
O
= 32.0 dBm
P
OUT
I
D
ADD
2500
2000
1500
1000
500
0
100
50
0
35
30
25
20
15
10
5
10
15
20
25
30
V
DS
= 3.5 V
I
DQ
= 400 mA
f = 1.8 GHz
Drain Current, I
DS
(mA)
Ef
ficiency/Power Added
Ef
ficiency
,
,
ADD
(%)
Gate to Source Voltage, V
GS
(V)
P
OUT
I
DS
ADD
2500
2000
1500
1000
500
0
100
50
0
33
32
31
30
29
28
0.0
1.0
2.0
3.0
4.0
P
MAX
= 32.6 dBm
APC
V
DS
= 3.5 V
f = 1.8 GHz
P
IN
= 25 dBm
Drain Current, I
DS
(mA)
Ef
ficiency/Power Added
Ef
ficiency
,
,
ADD
(%)
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
Drain Current, I
DS
(mA)
Ef
ficiency/Power Added
Ef
ficiency
,
,
ADD
(%)
P
OUT
I
D
ADD
2500
2000
1500
1000
500
0
100
50
0
35
30
25
20
15
5
10
15
20
30
25
10
P
MAX
= 30.6 dBm
V
DS
= 2.8 V
I
DQ
= 400 mA
f = 1.8 GHz
P
OUT
I
DS
ADD
32
31
30
29
28
27
0.0
1.0
2.0
3.0
4.0
APC
P
O
= 31.1 dBm
2500
2000
1500
1000
500
0
100
50
0
V
DS
= 2.8 V
f = 1.8 GHz
P
IN
= 25 dBm
Output Power, P
OUT
(dBm)
Gate to Source Voltage, V
GS
(V)
Drain Current, I
DS
(mA)
Ef
ficiency/Power Added
Ef
ficiency
,
,
ADD
(%)
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
NE5510279A
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.1
0.889
-149.7
8.66
99.8
0.019
14.6
0.854
-173.8
-0.50
26.6
0.2
0.872
-165.4
4.41
87.5
0.020
3.4
0.861
-177.7
-0.36
23.4
0.3
0.871
-170.9
2.91
82.0
0.020
-1.8
0.875
-178.6
-0.25
21.6
0.4
0.871
-173.7
2.13
76.1
0.019
-4.1
0.869
-179.6
-0.01
20.5
0.5
0.873
-175.6
1.69
71.5
0.019
-9.5
0.886
179.7
0.04
19.5
0.6
0.880
-176.9
1.37
67.7
0.018
-11.8
0.886
179.2
0.22
18.8
0.7
0.884
-177.9
1.17
63.9
0.016
-10.6
0.893
178.9
0.40
18.6
0.8
0.897
-179.1
0.99
60.5
0.016
-10.2
0.898
178.0
0.40
17.9
0.9
0.905
-179.9
0.87
56.3
0.014
-15.0
0.914
177.8
0.41
17.9
1.0
0.919
178.1
0.77
53.8
0.014
-7.8
0.928
176.0
0.16
17.4
1.1
0.930
175.9
0.69
48.8
0.012
-13.7
0.938
174.8
0.11
17.6
1.2
0.923
174.2
0.60
46.9
0.012
-11.0
0.927
172.9
0.59
17.0
1.3
0.919
172.9
0.54
42.6
0.010
-10.5
0.923
171.8
1.29
14.1
1.4
0.918
171.8
0.48
41.0
0.010
-4.7
0.922
170.6
1.62
12.2
1.5
0.918
170.6
0.44
37.6
0.011
-8.0
0.924
170.1
1.53
11.7
1.6
0.920
168.9
0.41
36.7
0.008
-5.5
0.927
168.7
2.46
10.4
1.7
0.918
167.5
0.36
33.6
0.008
4.3
0.922
167.9
3.27
8.5
1.8
0.927
166.2
0.35
30.9
0.009
12.5
0.935
165.9
1.95
10.3
1.9
0.922
164.1
0.31
28.2
0.007
20.9
0.932
164.9
3.67
7.9
2.0
0.923
162.6
0.30
27.8
0.007
32.4
0.942
163.0
3.08
8.6
2.1
0.928
159.9
0.26
25.2
0.007
48.5
0.928
161.8
4.46
6.2
2.2
0.926
158.6
0.25
23.2
0.006
36.8
0.938
160.0
4.89
6.3
2.3
0.929
156.6
0.22
20.0
0.008
50.0
0.935
157.6
4.01
5.4
2.4
0.925
154.5
0.22
18.0
0.009
45.1
0.945
156.2
3.01
6.2
2.5
0.928
152.2
0.20
18.1
0.007
61.4
0.941
154.5
4.77
4.8
2.6
0.933
150.4
0.20
17.2
0.009
56.3
0.938
152.5
3.43
5.2
2.7
0.930
148.4
0.16
15.0
0.011
70.0
0.933
150.3
4.13
2.5
2.8
0.929
146.2
0.17
11.1
0.013
59.4
0.952
148.1
2.01
5.4
2.9
0.931
144.4
0.16
11.6
0.013
74.0
0.937
146.9
3.01
3.2
3.0
0.933
142.6
0.15
10.0
0.014
67.5
0.950
145.0
2.10
4.3
NE5510279A
V
D
= 3.5 V, I
DS
= 400 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
RECOMMENDED P.C.B. LAYOUT
(Units in mm)
NE5510279A
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
07/05/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
4.0
1.7
6.1
0.5
0.5
Source
Drain
Gate
5.9
1.2
1.0
0.5
Through hole
0.2
33
PDF 
ZIP