NE662M16
NPN SILICON HIGH
FREQUENCY TRANSISTOR
M16
HIGH GAIN BANDWIDTH: f
T
= 25 GHz
LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
NEW LOW PROFILE M16 PACKAGE:
Flat Lead Style with a height of just 0.50mm
FEATURES
DESCRIPTION
The NE662M16 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. With a typical transition frequency of 25 GHz
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M16" package is ideal for
today's portable wireless applications. The NE662M16 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
PART NUMBER
NE662M16
EIAJ
1
REGISTERED NUMBER
2SC5704
PACKAGE OUTLINE
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
nA
200
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
nA
200
h
FE
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
50
70
100
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
GHz
20
25
MSG
Maximum Stable Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
20
|S
21E
|
2
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
14
17
NF
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
dB
1.1
1.5
P
1dB
Output Power at 1 dB compression point at
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dBm
11
IP
3
Third Order Intercept Point at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
22
Cre
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
pF
0.14
0.24
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG =
DC
RF
S
21
S
12
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
15
V
CEO
Collector to Emitter Voltage
V
3.3
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
35
P
T
Total Power Dissipation
mW
115
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
NE662M16
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M16
0.50.05
0.125
+0.1 -0.05
0.4
0.4
0.8
0.150.05
1.2
+0.07 -0.05
0.8
+0.07
-0.05
1.00.05
1
2
3
6
5
4
zC
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
4. Base
5. Emitter
6. Emitter
PART NUMBER
QUANTITY
PACKAGING
NE662M16-T3
10 kpcs/reel
Pin 1 (Collector), Pin 6 (Emitter)
face the perforation side on the
tape.
ORDERING INFORMATION
NE662M16
Collector to Base Voltage, V
CB
(V)
Reverse Transfer Capacitance, C
re
(pF)
f = 1 MHz
0.20
0.16
0.12
0.08
0.04
0
2
4
6
8
10
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Base to Emitter Voltage, V
BE
(V)
Collector Current, Ic (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
35
25
30
10
5
20
15
0
0.4
0.2
0.6
0.8
1.0
40
25
20
15
35
30
10
5
0
1
2
3
4
I
B
= 50
A
450
A
400
A
350
A
300
A
250
A
200
A
150
A
100
A
500 A
1 000
100
10
1
0.1
10
100
V
CE
= 2 V
V
CE
= 2 V
f = 2 GHz
30
25
20
15
10
5
0
10
1
100
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
300
250
115
200
150
100
50
0
25
50
75
100
125
150
Mounted on Glass Epoxy Board
(1.08 cm
2
1.0 mm (t) )
Ambient Temperature, T
A
(
C)
Total Power Dissipation, P
tot
(mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Collector to Emitter Voltage, V
CE
(V)
Collector Current, Ic (mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current, l
C
(mA)
DC Current Gain, h
FE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
Gain Bandwdth, f
T
(GHz)
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE662M16
Input Power, P
in
(dBm)
Input Power, P
in
(dBm)
Output Power, P
out
(dBm)
Output Power, P
out
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
V
CE
= 2 V
f = 1 GHz
30
25
5
10
15
20
0
1
10
100
MSG
|S
21e
|
2
V
CE
= 2 V, f = 1 GHz
I
cq
= 20 mA (RF OFF)
30
20
10
0
-10
50
40
20
30
10
-25
-15
5
5
P
out
I
C
V
CE
= 2 V, f = 2 GHz
I
cq
= 20 mA (RF OFF)
30
20
10
0
-10
50
40
20
30
10
-25
-15
5
5
P
out
I
C
V
CE
= 1 V
I
C
= 20 mA
35
20
25
30
5
10
15
0
0.1
1
10
V
CE
= 2 V
I
C
= 20 mA
35
20
25
30
5
10
15
0
0.1
1
10
V
CE
= 2 V
f = 2 GHz
30
25
5
10
15
20
0
1
10
100
MAG
MSG
|S
21e
|
2
Collector Current, I
C
(mA)
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Frequency, f (GHz)
Insertion Power Gain, IS
21e
I
2
INSERTION POWER GAIN
vs. FREQUENCY
Frequency, f (GHz)
Insertion Power Gain, IS
21e
I
2
INSERTION POWER GAIN
vs. FREQUENCY
Collector Current, I
c
(mA)
Collector Current, I
c
(mA)
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
2
1
0
30
25
20
15
10
5
0
1
10
100
V
CE
= 2 V
f = 1 GHz
NF
G
a
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
6
5
4
3
2
1
0
30
25
20
15
10
5
0
1
10
100
V
CE
= 1 V
f = 1 GHz
NF
G
a
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE662M16
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
2
1
0
30
25
20
15
10
5
0
1
10
100
V
CE
= 1 V
f = 1.5 GHz
NF
G
a
6
5
4
3
2
1
0
30
25
20
15
10
5
0
1
10
100
V
CE
= 2 V
f = 1.5 GHz
NF
G
a
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
4
3
2
1
0
30
25
20
15
10
5
0
1
10
100
V
CE
= 1 V
f = 2 GHz
NF
G
a
6
5
4
3
2
1
0
30
25
20
15
10
5
0
1
10
100
V
CE
= 2 V
f = 2 GHz
NF
G
a
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
PDF 
ZIP