NE664M04
NEC's
MEDIUM POWER NPN
SILICON HIGH FR
EQUENCY TRANSISTOR
R57
2.050.1
1.250.1
3
1.30
1
4
2
0.65
0.65
1.25
2.00.1
+0.30
+0.01
-0.05
0.65
0.65
+0.40
+0.30
-0.05
(leads 1, 3 and ,4)
0.590.05
+0.1
1
+0.1
-0.05
HIGH GAIN BANDWIDTH:
f
T
= 20 GHz
HIGH OUTPUT POWER:
P
-1dB
= 26 dBm at 1.8 GHz
HIGH LINEAR GAIN:
G
L
= 12 dB at 1.8 GHz
LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
California Eastern Laboratories
DESCRIPTION
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz f
T
wafer process. With a transition frequency of
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even
with low voltage and low current, making this device an
excellent choice for the output or driver stage for mobile or fixed
wireless applications.
The NE664M04 is housed in NEC's low profile/flat lead style
"M04" package
Notes:
1. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
4.
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K -
PART NUMBER
NE664M04
PACKAGE OUTLINE
M04
EIAJ
3
REGISTRATION NUMBER
2SC5754
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
nA
1000
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
nA
1000
h
FE
DC Current
1
Gain at V
CE
= 3 V, I
C
= 100 mA
40
60
100
P
1dB
Output Power at 1 dB compression point at V
CE
= 3.6 V, I
CQ
= 4 mA,
dBm
26.0
f = 1.8 GHz, P
in
= 15 dBm, 1/2 Duty Cycle
G
L
Linear Gain at V
CE
= 3.6 V, I
CQ
= 20 mA, f = 1.8 GHz, P
in
= 0 dBm,
dB
12.0
1/2 Duty Cycle
MAG
Maximum Available Power Gain
4
at V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
dBm
12.0
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
dB
5.0
6.5
c
Collector Efficiency, 3.6 V, I
CQ
= 4 mA, f = 1.8 GHz, P
in
= 15 dBm,
%
60
1/2 Duty Cycle
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 100 mA, f = 0.5 GHz
GHz
16
20
Cre
Feedback Capacitance
2
at V
CB
= 3 V, I
C
= 0, f = 1 MHz
pF
1.0
1.5
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
DC
RF
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
13
V
CEO
Collector to Emitter Voltage
V
5.0
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
500
P
T
Total Power Dissipation
2
mW
735
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
PART NUMBER
QUANTITY
NE664M04-T2
3k pcs./reel
ORDERING INFORMATION
SYMBOLS
PARAMETERS
UNITS RATINGS
R
th j-a
1
Junction to Ambient Resistance
1
C/W
170
R
th j-a
2
Junction to Ambient Resistance
2
C/W
570
THERMAL RESISTANCE
Note:
1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
2. Stand alone device in free air.
NE664M04
APPLICATIONS
Bluetooth Power Class 1
f = 2.4 GHz
0 dBm
13 dBm
22 dBm
NE663M04
NE664M04
T80
R57
SS Cordless Phone
f = 2.4 GHz
20 dBm
26 dBm
NE664M04
R57
DCS1800 (GSM1800) Cellular Phone
f = 1.8 GHz
5 dBm
16 dBm
25 dBm
35 dBm
NE678M04
NE664M04
NE5520379A
(MOS FET)
A 3
9Z001
R55
R57
Cordless Phone
f = 0.9 GHz
3 dBm
9 dBm
25 dBm
NE68019
(3-pin TUSMM)
NE664M04
R57
T H
NE664M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Ambient Temperature, T
A
(
C)
Total Power Dissipation, P
tot
(mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Collector to Emitter Voltage, V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage, V
CB
(V)
Reverse Tramsfer Capacitance, C
re
(pF)
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Collector Current, I
C
(mA)
Base to Emitter Voltage, V
BE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current, I
C
(mA)
DC Current Gain h
FE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Mounted on Polyimide PCB
(38 x 38 mm, t = 0.4 mm)
205
735
1000
600
800
400
200
0
25
50
75
100
125
150
Stand alone device
in free air
f = 1 MHz
2.0
1.5
1.0
0.5
0
1
2
3
4
5
1000
100
10
1
0.1
0.01
0.5
0.6
0.7
0.8
0.9
1.0
0.001
V
CE
= 3 V
I
B
: 0.5 mA step
I
B
= 0.5 mA
450
400
350
300
250
200
150
100
50
0
1
2
3
4
5
6
7 mA
6 mA
1 mA
2 mA
3 mA
4 mA
5 mA
1000
100
10
1
10
100
1000
V
CE
= 3 V
NE664M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, I
C
(mA)
Gain Bandwidth Product, f
T
(GHz)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Frequency, f (Hz)
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
Collector Current, I
C
(mA)
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
V
CE
= 3 V
f = 0.5 GHz
25
20
15
10
5
0
1
10
100
1000
V
CE
= 3 V
I
C
= 100 mA
35
30
25
20
15
10
5
0
10
1
MSG
MAG
|
S
21e
|
2
V
CE
= 3 V
f = 1 GHz
20
15
10
5
0
1
10
100
1000
MSG
MAG
|
S
21e
|
2
V
CE
= 3 V
f = 2 GHz
20
15
10
5
0
1
10
100
1000
MSG
MAG
|
S
21e
|
2
V
CE
= 3 V
f = 2.5 GHz
10
100
1000
1
0
5
10
15
20
|
S
21e
|
2
MSG
MAG
NE664M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
V
CE
= 3.2 V, f = 0.9 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
-15
-10
-5
0
5
10
15
G
P
I
C
P
out
c
0
50
100
150
200
250
300
V
CE
= 3.2 V, f = 2.4 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
-5
0
5
10
15
20
25
I
C
P
out
c
0
50
100
150
200
250
300
G
P
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
30
25
20
15
10
5
0
G
P
I
C
P
out
c
0
50
100
150
200
250
300
-10
-5
0
5
10
15
20
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
G
P
I
C
P
out
c
0
50
100
150
200
250
300
-10
-5
0
5
10
15
20
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
30
25
20
15
10
5
G
P
I
C
P
out
c
0
-10
-5
0
5
10
15
20
0
50
100
150
200
250
300
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
G
P
I
C
P
out
c
0
-10
-5
0
5
10
15
20
0
50
100
150
200
250
300
Input Power, P
in
(dBm)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
Input Power, P
in
(dBm)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
Collector Current, I
C
(mA)
Collector Efficiency,
C
(%)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
Collector Current, I
C
(mA)
Collector Efficiency,
C
(%)
Input Power, P
in
(dBm)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
Input Power, P
in
(dBm)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
Collector Current, I
C
(mA)
Collector Efficiency,
C
(%)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
Collector Current, I
C
(mA)
Collector Efficiency,
C
(%)
Input Power, P
in
(dBm)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
Input Power, P
in
(dBm)
Output Power, P
out
(dBm)
Power Gain, G
p
(dB)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
Collector Current, I
C
(mA)
Collector Efficiency,
C
(%)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
& COLLECTOR EFFICIENCY
vs. INPUT POWER
Collector Current, I
C
(mA)
Collector Efficiency,
C
(%)
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