PLEASE NOTE:
PLEASE NOTE:
PLEASE NOTE:
PLEASE NOTE:
PLEASE NOTE:
The following part numbers
The following part numbers
The following part numbers
The following part numbers
The following part numbers
from this datasheet are not
from this datasheet are not
from this datasheet are not
from this datasheet are not
from this datasheet are not
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
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NE68035
NE68035
NE68035
NE68035
NE68035
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE680
SERIES
NEC's NE680 series of NPN epitaxial silicon transistors is
designed for low noise, high gain and low cost applications.
Both the chip and micro-x versions are suitable for applications
up to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
f
T
makes it ideal for low voltage/low current applications, down
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 series.
300 500 1000 2000 3000
.5
1.0
1.5
2.0
2.5
25
20
15
10
5
6V, 5 mA
3V, 5 mA
Noise Figure, NF (dB)
NE68018
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
Associated Gain, G
A
(dB)
Frequency, f (GHz)
00 (CHIP)
35 (MICRO-X)
E
B
DESCRIPTION
FEATURES
HIGH GAIN BANDWIDTH PRODUCT: f
T
= 10 GHz
LOW NOISE FIGURE:
1.7 dB at 2 GHz
2.6 dB at 4 GHz
HIGH ASSOCIATED GAIN:
12.5 dB at 2 GHz
8.0 dB at 4 GHz
EXCELLENT LOW VOLTAGE
LOW CURRENT PERFORMANCE
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories
NE680 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
f
T
Gain Bandwidth Product at V
CE
= 6 V, I
C
= 10 mA
GHz
10
10
10
NF
Noise Figure at V
CE
= 6 V, I
C
= 5 mA, f = 1 GHz
dB
1.6
1.7
f = 2 GHz
dB
1.7
2.4
1.8
3
1.9
f = 4 GHz
dB
2.6
GNF
Associated Gain at V
CE
= 6 V, I
C
= 5 mA,
f = 1 GHz
dB
14
13.5
f = 2 GHz
dB
12.5
10.2
9.6
f = 4 GHz
dB
8
MAG
Maximum Available Gain at V
CE
= 6 V, I
C
= 10 mA
f = 1 GHz
dB
18.5
19
18.5
f = 2 GHz
dB
16.2
12.7
11.8
f = 4 GHz
dB
10.2
8.2
7.3
|S
21E
|
2
Insertion Power Gain at V
CE
= 6 V, I
C
= 10 mA,
f = 1 GHz
dB
17
15.5
15
f = 2 GHz
dB
10.5 12.5
7.5
9.8
9.2
f = 4 GHz
dB
7.5
4.6
4.4
h
FE
Forward Current Gain
2
at V
CE
= 6 V, I
C
= 10 mA
50
100
250
50
100
250
V
CE
= 3 V, I
C
= 5 mA
80
160
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0 mA
A
1.0
1.0
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1V, I
C
= 0 mA
A
1.0
1.0
1.0
C
RE3
Feedback Capacitance at V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
pF
0.3
0.7
0.3
0.7
P
T
Total Power Dissipation
mW
400
150
100
R
TH (J-A)
Thermal Resistance (Junction to Ambient)
C/W
833
1000
R
TH (J- C)
Thermal Resistance (Junction to Case)
C/W
120
200
200
PART NUMBER
NE68000
NE68018
NE68019
EIAJ
1
REGISTERED NUMBER
2SC5013
2SC5008
PACKAGE OUTLINE
00 (CHIP)
18
19
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN
TYP MAX
MIN
TYP MAX
MIN
TYP MAX
PART NUMBER
NE68030
NE68033
NE68035
NE68039/39R
EIAJ
1
REGISTERED NUMBER
2SC4228
2SC3585
2SC3587
2SC4095
PACKAGE OUTLINE
30
33
35
39
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
f
T
Gain Bandwidth Product at V
CE
= 6 V, I
C
= 10 mA
GHz
10
10
10
10
NF
Noise Figure at V
CE
= 6 V, I
C
= 5 mA, f = 1 GHz
dB
1.5
1.6
f = 2 GHz
dB
1.7
1.8
3.0
1.7
2.4
1.7
2.5
f = 4 GHz
dB
2.9
2.1
2.6
2.6
GNF
Associated Gain at V
CE
= 6 V, I
C
= 5 mA,
f = 1 GHz
dB
12.5
11.0
f = 2 GHz
dB
9.4
9.0
12.5
11
f = 4 GHz
dB
5.3
4.2
8
6.5
MAG
Maximum Available Gain at V
CE
= 6 V, I
C
= 10 mA
f = 1 GHz
dB
17
17
18.5
18
f = 2 GHz
dB
10.9
10.9
16.2
12.4
f = 4 GHz
dB
6.8
6.7
10.2
8.7
|S
21E
|
2
Insertion Power Gain at V
CE
= 6 V, I
C
= 10 mA,
f = 1 GHz
dB
13.5
13
17
14.5
f = 2 GHz
dB
8.5
6.7
10.5 12.5
9.6
f = 2 GHz
dB
3.6
3.7
7.5
4.9
h
FE
Forward Current Gain
2
at V
CE
= 6 V, I
C
= 10 mA
50
100 250
50
100 250
50
100 250
V
CE
= 3 V, I
C
= 5 mA
50 100 250
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0 mA
A
1.0
1.0
1.0
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1V, I
C
= 0 mA
A
1.0
1.0
1.0
1.0
Cre
3
Feedback Capacitance at
V
CB
= 3V, I
E
= 0 mA, f = 1 MHz
pF
0.3
0.7
V
CE
= 10 V, I
E
= 0 mA, f = 1 MHz
pF
0.3
0.8
0.2
0.7
0.25 0.8
P
T
Total Power Dissipation
mW
150
200
290
200
R
TH (J-A)
Thermal Resistance (Junction to Ambient)
C/W
833
620
550
620
R
TH (J- C)
Thermal Resistance (Junction to Case)
C/W
200
200
200
200
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, PW
350
s, duty cycle
2%.
3. The emitter terminal should be connected to the ground
terminal of the 3 terminal capacitance bridge.
NE680 SERIES
MAG
|S
21
|
2
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
30
25
20
15
10
5
0
Insertion Gain, |S
21
|
2
(dB)
Maximum Available Gain, MAG (dB)
Insertion Gain, |S
21
|
2
(dB)
1 2 3 5 7 10 20 30 50 70 100
14
13
12
11
10
9
8
7
6
5
4
3
2
V
CE
= 6 V
f = 2 GHz
f = 3 GHz
f = 4 GHz
Collector Current, I
C
(mA)
1 2 3 5 7 10 20 30 50 70 100
12
10
8
6
4
2
0
NE68033
V
CE
= 6 V
f = 2 GHz
Insertion Gain, |S
21
|
2
(dB)
Insertion Gain, |S
21
|
2
(dB)
Maximum Available Gain, MAG (dB)
NE68035
INSERTION GAIN vs.
COLLECTOR CURRENT
NE68033
INSERTION GAIN vs.
COLLECTOR CURRENT
NE68035
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
20
V
CEO
Collector to Emitter Voltage
V
10
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
35
T
J
Junction Temperature
C
150
2
T
STG
Storage Temperature
C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Maximum T
J
for the NE68035 is 200
C.
DC POWER DERATING CURVES
Ambient Temperature, T
A
(
C)
Total Power Dissipation, P
T
(mW)
NE68035
0 50 100 150 200
400
300
200
100
0
NE68033
NE68039
NE68019
Collector Current, I
C
(mA)
Frequency, f (GHz)
Frequency, f (GHz)
NE68039
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
|S
21
|
2
V
CE
= 6 V
I
C
= 10 mA
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
30
25
20
15
10
5
0
MAG
NE680 SERIES
TYPICAL PERFORMANCE CURVES
(TA = 25
C)
V
CE
= 6 V
f = 4 GHz
f = 2 GHz
5
4
3
2
1
0
1 2 3 5 7 10 20
Collector Current, I
C
(mA)
V
CE
= 6 V
500
300
200
100
70
50
30
20
10
1 2 3 5 7 10 20 30 50
V
CE
= 6 V
f = 2 GHz
1 2 3 5 7 10 20
5
4
3
2
1
0
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
DC Forward Current Gain, h
FE
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Gain Bandwidth Product, f
T
(GHz)
NE68035
NOISE FIGURE
vs. COLLECTOR CURRENT
NE68033
NOISE FIGURE vs. COLLECTOR
CURRENT
Collector to Base Voltage, V
CB
(V)
NE68033
NE68035
5
3
2
1
0.7
0.5
0.3
0.2
0.1
1 2 3 5 7 10 20 30 50
Collector to Base Capacitance, C
OB
(pF)
COLLECTOR TO BASE CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CE
= 6 V
10
7
5
3
2
1
1 2 3 5 7 10 20
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 3 V, I
C
= 5mA
500
1.36
19.2
0.52
18
0.47
800
1.47
15.7
0.48
33
0.33
1000
1.55
14.0
0.46
41
0.31
1500
1.71
11.0
0.42
58
0.27
2000
1.88
9.0
0.32
75
0.22
2500
2.06
7.4
0.27
86
0.18
3000
2.29
6.0
0.22
103
0.12
V
CE
= 6 V, I
C
= 5 mA
500
1.36
19.44
0.56
16
0.50
800
1.47
15.86
0.54
30
0.36
1000
1.55
14.16
0.52
39
0.33
1500
1.71
11.15
0.48
58
0.30
2000
1.88
9.49
0.36
77
0.27
2500
2.06
7.89
0.30
88
0.23
3000
2.29
6.74
0.24
103
0.17
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 3 V, I
C
= 5 mA
500
1.45
20.74
0.46
22
0.41
800
1.50
17.44
0.39
44
0.32
1000
1.55
15.79
0.34
54
0.29
2000
1.90
9.96
0.24
76
0.26
3000
2.40
7.26
0.16
130
0.12
V
CE
= 6 V, I
C
= 5 mA
500
1.5
21.20
.47
21
0.44
800
1.6
17.50
.38
36
0.31
1000
1.6
15.63
.44
47
0.43
2000
2.1
10.20
.32
81
0.27
3000
2.4
7.49
.19
125
0.14
NE680 SERIES
NE68018
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
NE68019
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
NE68030
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
NE68033
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
NE68039
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
NE68035
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 6 V, I
C
= 5 mA
1000
1.2
19.21
0.30
65
0.37
2000
1.7
14.49
0.20
155
0.30
4000
2.6
9.12
0.22
-128
0.33
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 2.5 V, I
C
= 3 mA
500
1.10
18.26
0.65
21
0.56
800
1.20
14.56
0.60
32
0.42
1000
1.27
13.26
0.52
43
0.39
1500
1.43
9.80
0.47
48
0.36
2000
1.64
7.76
0.39
53
0.32
V
CE
= 6 V, I
C
= 5 mA
500
1.35
19.25
0.60
17
0.60
1000
1.45
14.20
0.45
33
0.48
2000
1.70
9.18
0.22
42
0.45
3000
2.10
6.60
0.11
-4
0.40
4000
2.55
5.22
0.18
-63
0.47
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 2.5 V, I
C
= 3 mA
500
1.32
12.79
0.79
21
1.60
800
1.48
12.59
0.72
40
1.43
1000
1.58
11.35
0.69
52
1.08
1500
1.82
5.87
0.64
64
0.92
2000
2.12
3.48
0.59
78
0.75
V
CE
= 6 V, I
C
= 5 mA
1000
1.52
16.93
0.46
126
0.15
2000
1.76
10.70
0.37
-159
0.11
3000
2.25
7.56
0.36
-132
0.14
4000
2.92
5.82
0.35
-115
0.16
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 2.5 V, I
C
= 3 mA
500
1.14
19.29
0.54
18
0.41
800
1.21
15.55
0.47
28
0.35
1000
1.26
14.04
0.42
39
0.29
1500
1.40
10.98
0.31
55
0.25
2000
1.62
9.34
0.16
97
0.19
V
CE
= 6 V, I
C
= 5 mA
500
1.5
20.60
0.52
3
0.52
1000
1.6
15.91
0.38
29
0.40
2000
1.7
10.82
0.18
81
0.26
3000
2.1
8.49
0.17
-158
0.29
4000
2.6
7.21
0.40
-116
0.31
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