PART NUMBER
1
NE68818
NE68819
NE68830
NE68833
NE68839/39R
EIAJ
2
REGISTERED NUMBER
2SC5194
2SC5195
2SC5193
2SC5191
2SC5192/92R
PACKAGE OUTLINE
18
19
30
33
39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
f
T
Gain Bandwidth Product at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
GHz
4
5
4.5
5
4
4.5
4
4.5
4
4.5
f
T
Gain Bandwidth Product at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
GHz
10
9.5
9
8.5
9
NF
MIN
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.7
2.5
1.7
2.5
1.7
2.5
1.7
2.5
1.7
2.5
NF
MIN
Minimum Noise Figure at
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
dB
1.5
1.5
1.5
1.5
1.5
|S
21E
|
2
Insertion Power Gain at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
dB
3.0 4.0
3.0
4.0
2.5
3.5
2.5
3.5
4.0
4.5
|S
21E
|
2
Insertion Power Gain at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
dB
8.5
8
6.5
6.5
9
h
FE
Forward Current Gain
3
at
V
CE
= 1 V, I
C
= 3 mA
80
160
80
160
80
160
80
160
80
160
I
CBO
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
nA
100
100
100
100
100
I
EBO
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
nA
100
100
100
100
100
C
RE4
Feedback Capacitance at
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
pF
0.65 0.8
0.7
0.8
0.75 0.85
0.75 0.85
0.65 0.8
P
T
Total Power Dissipation
mW
150
125
150
200
200
R
TH(J-A)
Thermal Resistance
(Junction to Ambient)
C/W
833
1000
833
625
625
R
TH(J-C)
Thermal Resistance(Junction to Case)
C/W
SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE688
SERIES
FEATURES
LOW PHASE NOISE DISTORTION
LOW NOISE: 1.5 dB at 2.0 GHz
LOW VOLTAGE OPERATION
LARGE ABSOLUTE MAXIMUM COLLECTOR
CURRENT: I
C
MAX = 100 mA
AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
ALSO AVAILABLE IN CHIP FORM
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
33 (SOT 23 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
39R (SOT 143R STYLE)
DESCRIPTION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
3. Pulsed measurement, PW
350
s, duty cycle
2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
California Eastern Laboratories
18 (SOT 343 STYLE)
PLEASE NOTE:
PLEASE NOTE:
PLEASE NOTE:
PLEASE NOTE:
PLEASE NOTE:
The following part numbers
The following part numbers
The following part numbers
The following part numbers
The following part numbers
from this datasheet are not
from this datasheet are not
from this datasheet are not
from this datasheet are not
from this datasheet are not
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
details:
details:
details:
details:
details:
NE68818
NE68818
NE68818
NE68818
NE68818
NE68839
NE68839
NE68839
NE68839
NE68839
NE68839R
NE68839R
NE68839R
NE68839R
NE68839R
The NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
age styles, and in chip form.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
9
V
CEO
Collector to Emitter Voltage
V
6
V
EBO
Emitter to Base Voltage
V
2.0
I
C
Collector Current
mA
100
T
J
Operating Junction
Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
NE688 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
200
100
0
50
100
150
Free Air
0
Free Air
150
100
50
0
0
50
100
150
NE68818, NE68830
D.C. POWER DERATING CURVE
NE68819
D.C. POWER DERATING CURVE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Total Power Dissipation, P
T
(mW)
Free Air
200
100
0
0
50
100
150
30
25
20
15
10
5
0
0
2.5
5
7
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
I
B
= 20
A
NE68833, NE68839
D.C. POWER DERATING CURVE
Total Power Dissipation, P
T
(mW)
Total Power Dissipation, P
T
(mW)
Ambient Temperature T
A
(
C)
Ambient Temperature T
A
(
C)
Ambient Temperature T
A
(
C)
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE688 SERIES
DC Current Gain, h
FE
Collector Current, I
C
(mA)
8
6
4
2
0
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 3 V
f = 2 GHz
Insertion Power Gain, |S
21e
|
2
(dB)
Collector Current, I
C
(mA)
f = 2 GHz
5
4
3
2
1
0
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 3 V
Noise Figure, NF (dB)
TYPICAL PERFORMANCE CURVES
(TA = 25
C)
NE68833
NOISE FIGURE vs. COLLECTOR CURRENT
NE68833
INSERTION GAIN vs. COLLECTOR CURRENT
200
100
0
0.1 0.2
0.5
1
2
5
10
20
50
100
V
CE
= 1 V
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
Gain Bandwidth Product, f
T
(GHz)
f = 2 GHz
10
8
6
4
2
0
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 3 V
NE68839
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
V
CE
= 1 V
0
0.5
1
100
50
20
2
0.5
1
0.2
0.1
0.05
0.02
0.01
10
5
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
BE
(V)
Feed-back Capacitance, C
RE
(pF)
Collector to Base Voltage, V
CB
(V)
1.0
0.5
0.1
1
5
10
20
f = 1 MHz
NE68830
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
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