PART NUMBER
NE699M01
PACKAGE OUTLINE
M01
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
A
0.1
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
0.1
h
FE1
DC Current Gain at V
CE
= 2 V, I
C
= 20 mA
70
140
f
T
Gain Bandwidth Product at V
CE
= 2 V, I
C
= 20mA, f = 2.0GHz
GHz
13
16
C
RE2
Feedback Capacitance at V
CB
= 2 V, I
E
= 0, f = 1 MHz
pF
0.2
0.3
|S
21E
|
2
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
dB
12
14
NF
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.1
1.8
NE699M01
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE
HIGH-GAIN AMPLIFICATION
HIGH f
T
:
16 GHz TYP at 2 V, 20 mA
LOW NOISE FIGURE:
NF = 1.1 dB TYP at 2 GHz
HIGH GAIN:
|S
21E
|
2
= 14 dB TYP at f =
2 GHz
6 PIN SMALL MINI MOLD PACKAGE
EXCELLENT LOW VOLTAGE,
LOW CURRENT PERFORMANCE
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M01
DESCRIPTION
PRELIMINARY DATA SHEET
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Notes:
1. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
California Eastern Laboratories
2.1
0.1
1.25
0.1
0 ~ 0.1
0.15
0.9
0.1
0.7
2.0
0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
T97
PIN CONNECTIONS
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
Note: Pin 3 is identified with a circle on the bottom of the package.
TOP VIEW
The NE699M01 is an NPN high frequency silicon epitaxial
transistor (NE687) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE699M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
NE699M01
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
5
V
CEO
Collector to Emitter Voltage
V
3
V
EBO
Emitter to Base Voltage
V
2
I
C
Collector Current
mA
30
P
T
Total Power Dissipation
mW
90
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Ambient Temperature, T
A
(
C) (V)
Base to Emitter Voltage, V
BE
(V)
Collector Current, Ic (mA)
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Total Power Dissipation, P
T
(mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC Current Gain, h
FE
80
100
40
60
20
0
50
100
150
90 mW
Free Air
0
10
20
30
40
50
0.5
1.0
V
CE
= 2 V
25
20
15
10
5
0
1.0
2.0
3.0
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
fs = 20
A
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
I
B
= 20
A
500
200
100
50
20
10
1
2
5
10
20
50
100
V
CE
= 2 V
V
CE
= 1 V
PART NUMBER
QUANTITY
PACKAGING
NE699M01-T1
3000
Tape & Reel
ORDERING INFORMATION
NE699M01
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, Ic (mA)
Collector Current, Ic (mA)
Insertion Power Gain, |
S
21E
|
2
(dB)
Collector Current, Ic (mA)
Collector to Base Voltage, V
CB
(V)
Noise Figure, NF (dB)
Gain Bandwidth Product, f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. Ic CHARACTERISTICS
INSERTION POWER GAIN
vs. I
C
CHARACTERISTICS
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
NOISE FIGURE vs.
Ic CHARACTERISTICS
Feedback Capacitance, C
RE
(pF)
18
16
14
12
10
8
6
4
2
0
1
10
100
V
CE
= 2 V
f = 2 GHz
4
3
2
1
0
1
10
100
V
CE
= 2 V
f = 2 GHz
0.3
0.4
0.5
0.2
0.1
0
1
10
100
f = 1 MHz
Frequency, f (GHz)
Insertion Power Gain, I
S
21E
|
2
(dB)
INSERTION POWER GAIN vs.
FREQUENCY CHARACTERISTICS
V
CE
= 2 V
0.1
40
30
20
10
0
0.5
1.0
2.0 2.6
Ic = 20 mA
Ic = 3 mA
20
10
0
1
10
100
V
CE
= 2 V
f = 2 GHz
TYPICAL NOISE PARAMETERS
(T
A
= 25C)
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 2 V, IC = 7 mA
0.50
1.25
23.0
0.40
27
0.25
1.00
1.35
19.7
0.32
50
0.34
1.50
1.46
17.0
0.27
70
0.22
2.00
1.55
14.3
0.22
93
0.21
2.50
1.70
12.0
0.18
130
0.17
3.00
1.86
9.8
0.17
160
0.12
4.00
2.30
9.2
0.30
-150
0.08
5.00
2.75
8.2
0.60
-111
0.28
0.2
0
-0.2
-0.5
-1
-2
2
5
-5
5 GHz
500 MHz
OPT
0.2
0.5
1.0
2.0
5.0
-3
3
1
0.5
2.5
2
1.5
1
3
0.5
0
0.5
1
2
2.5
3
1.5
3.5
4
4.5
5
F
MIN
dB
2 V, 7 mA
TYPICAL CONSTANT NOISE FIGURE
MINIMUM NOISE FIGURE
vs. FREQUENCY
Frequency, f (GHz)
Minimum Noise Figure, NF
MIN
(dB)
2 V, 7 mA
NE699M01
NE699M01
NE699M01
V
CE
= 2 V, I
C
= 1 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.965
-5.8
3.118
169.3
0.013
82.4
0.990
-4.4
0.17
23.8
0.250
0.957
-16.5
2.957
164.0
0.031
76.7
0.985
-10.5
0.10
19.8
0.400
0.939
-26.7
2.971
155.1
0.049
69.3
0.972
-16.8
0.13
17.8
0.600
0.903
-40.4
2.934
143.5
0.070
59.7
0.947
-24.9
0.17
16.2
0.800
0.856
-54.6
2.871
132.0
0.088
50.0
0.917
-32.8
0.22
15.1
1.000
0.806
-68.8
2.754
120.8
0.102
40.9
0.881
-40.3
0.27
14.3
1.200
0.754
-83.5
2.648
109.7
0.112
32.3
0.844
-47.4
0.33
13.7
1.400
0.708
-98.0
2.503
99.4
0.118
24.3
0.809
-54.0
0.38
13.3
1.600
0.672
-111.7
2.334
89.6
0.119
17.0
0.778
-60.4
0.45
12.9
1.800
0.642
-125.3
2.196
80.6
0.118
10.6
0.752
-66.6
0.51
12.7
2.000
0.623
-137.6
2.045
71.9
0.114
5.1
0.732
-72.7
0.59
12.6
2.500
0.619
-162.8
1.687
53.0
0.095
-4.3
0.706
-87.7
0.83
12.5
3.000
0.637
178.8
1.410
37.3
0.073
-5.0
0.708
-102.9
1.17
10.4
3.500
0.661
164.5
1.179
23.6
0.056
9.0
0.728
-117.2
1.58
8.8
4.000
0.685
152.0
1.000
11.8
0.058
34.6
0.753
-130.2
1.55
8.0
4.500
0.705
139.7
0.851
1.7
0.079
49.5
0.780
-141.1
1.16
7.9
5.000
0.721
126.6
0.735
-7.0
0.109
52.3
0.804
-150.0
0.89
8.3
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
Coordinates in Ohms
Frequency in GH
z
V
CE
=
2 V, I
C
= 5
mA
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
S
11
5 GHz
S
11
0.1 GHz
S
22
5 GHz
S
22
0.1 GHz
90
270
180
225
315
135
45
S
21
5 GHz
S
21
0.1 GHz
S
12
5 GHz
S
12
0.1 GHz
0
V
CE
= 2 V, I
C
= 5 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.844
-11.8
13.310
166.4
0.012
79.5
0.955
-8.7
0.21
30.4
2.500
0.467
162.3
3.441
50.7
0.075
33.4
0.423
-100.4
0.19
26.4
0.400
0.735
-49.7
11.439
140.3
0.041
60.0
0.847
-31.2
0.25
24.5
0.600
0.634
-72.3
10.168
124.9
0.053
49.9
0.751
-42.8
0.35
22.8
0.800
0.546
-93.2
8.857
112.0
0.061
42.4
0.665
-52.0
0.45
21.7
1.000
0.482
-112.5
7.697
101.2
0.065
37.2
0.596
-59.3
0.56
20.7
1.200
0.442
-130.3
6.735
91.9
0.068
33.7
0.541
-65.6
0.66
20.0
1.400
0.422
-146.3
5.939
83.9
0.069
31.6
0.501
-71.3
0.77
19.3
1.600
0.416
-159.8
5.277
76.8
0.070
30.4
0.471
-76.6
0.87
18.8
1.800
0.419
-171.6
4.746
70.2
0.071
30.2
0.450
-81.9
0.96
18.3
2.000
0.429
179.0
4.288
64.2
0.072
30.6
0.436
-87.1
1.04
16.5
2.500
0.467
162.3
3.441
50.7
0.075
33.4
0.423
-100.4
1.19
14.0
3.000
0.503
151.4
2.860
38.7
0.081
37.6
0.435
-113.5
1.24
12.5
3.500
0.534
142.8
2.433
27.7
0.092
41.2
0.465
-125.3
1.21
11.5
4.000
0.560
134.8
2.108
17.3
0.106
43.1
0.503
-135.6
1.12
10.9
0.450
0.716
-55.4
11.128
136.4
0.045
57.4
0.826
-34.4
1.02
10.9
5.000
0.602
115.7
1.636
-2.0
0.143
41.5
0.588
-150.7
0.91
10.6
NE699M01
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
NE699M01
V
CE
= 2 V, I
C
= 7 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.792
-14.7
17.256
164.9
0.012
78.8
0.939
-10.3
0.23
31.6
0.250
0.743
-37.2
15.479
149.9
0.027
67.6
0.882
-24.0
0.23
27.6
0.400
0.658
-58.5
14.101
135.4
0.038
57.9
0.794
-35.7
0.31
25.7
0.600
0.552
-83.5
12.010
119.6
0.048
48.8
0.683
-47.5
0.43
24.0
0.800
0.471
-105.7
10.130
107.1
0.054
43.0
0.593
-56.4
0.55
22.8
1.000
0.421
-125.7
8.616
97.0
0.058
39.5
0.525
-63.4
0.67
21.7
1.200
0.397
-143.6
7.432
88.4
0.061
37.5
0.476
-69.4
0.77
20.9
1.400
0.389
-158.8
6.493
81.0
0.063
36.7
0.440
-74.9
0.87
20.1
1.600
0.393
-171.3
5.738
74.5
0.065
36.5
0.415
-80.1
0.96
19.5
1.800
0.403
178.2
5.137
68.4
0.067
37.0
0.397
-85.5
1.04
17.6
2.000
0.418
170.0
4.634
62.8
0.070
37.6
0.386
-90.7
1.10
16.3
2.500
0.460
155.6
3.710
50.2
0.077
40.2
0.378
-104.1
1.19
14.2
3.000
0.495
146.2
3.086
38.9
0.087
42.5
0.393
-117.0
1.21
12.8
3.500
0.525
138.5
2.630
28.4
0.099
43.9
0.423
-128.4
1.17
11.8
4.000
0.549
131.2
2.287
18.3
0.114
44.0
0.462
-138.0
1.09
11.2
4.500
0.569
122.8
2.015
8.7
0.131
42.8
0.505
-145.7
1.01
11.4
5.000
0.589
113.1
1.790
-0.7
0.150
40.5
0.549
-152.0
0.92
10.8
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -12/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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