NEC's C TO X BAND
N-CHANNEL GaAs MES FET NE722S01
FEATURES
HIGH POWER GAIN:
GS = 6 dB TYP at f = 12 GHz
OUTPUT POWER (at 1 dB compression):
15 dB TYP at f = 12 GHz
LOW NOISE/HIGH GAIN:
NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
GATE LENGTH: L
G
= 0.8
m (recessed gate)
GATE WIDTH: W
G
= 400
m
PART NUMBER
NE722S01
PACKAGE OUTLINE
S01
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
GSO
Gate to Source Leak Current, V
GS
= -5 V
uA
1.0
10
I
DSS
Saturated Drain Current, V
DS
= 3 V, V
GS
= 0 V
mA
60
90
120
V
GS
Gate to Source Cutoff Voltage, V
DS
= 3 V, I
D
= 100
A
V
-0.5
-4.0
g
m
Transconductance, V
DS
= 3 V, I
DS
= 30 mA
mS
20
45
G
S
Power Gain, V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
dB
6
P1dB
Output Power at 1 dB Gain Compression Point at
dBm
15.0
V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
NF
Noise Figure, V
DS
= 3 V, I
DS
= 10 mA, f = 4 GHz
dB
0.9
Ga
Associated Gain, V
DS
= 3 V, I
DS
= 10 mA, f = 4 GHz
dB
12
_
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PACKAGE OUTLINE SO1
1. Source
2. Drain
3. Source
4. Gate
OUTLINE DIMENSION
(Units in mm)
2.0 0.2
0.65 TYP
2.0 0.2
4
2
3
1
0.5
TYP
2.00.2
1.9 0.2
0.125 0.05
1.6
0.4 MAX
4.0 0.2
1.5 MAX
P
APPLICATIONS
C to X band low noise amplifiers
C to X band oscillators
DESCRIPTION
NEC's NE722S01 is a low cost GaAs MESFET suitable for
both amplifier and oscillator applications through X-band.
The device features a 0.8 micron recessed gate, triple
epitaxial technology and is fabricated using ion implantation
for improved RF and DC performance and uniformity. This
device's low phase noise and high fT makes it a excellent
choice for oscillator applications on a digital LNB (Low
Noise Block). The NE722S01 is housed in a low cost plastic
package which is available in Tape and Reel.
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance.
California Eastern Laboratories
PART NUMBER
SUPPLY FORM
MARKING
NE722S01-T1
Tape & Reel 1000 pcs/reel
NE722S01-T1B
1
Tape & Reel 4000 pcs/reel
Note:
1. Available if quantity is over 100k per month
ORDERING INFORMATION
RECOMMENDED
OPERATING CONDITIONS
(T
A
= 25
C)
PART NUMBER
NE722S01
SYMBOLS
PARAMETERS
UNITS MIN TYP MAX
V
DS
Drain to Source Voltage
V
3
4
I
DS
Drain Current
mA
30
40
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
5.0
V
GS
Gate to Source Voltage
V
-5.0
V
GD
Gate to Drain Voltage
V
-6.0
I
DS
Drain Current
mA
I
DSS
P
T
Total Power Dissipation
mW
250
P
IN
Input Power
mW
40
T
CH
Channel Temperature
C
125
T
STG
Storage Temperature
C
-65 to +125
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE722S01
Drain Current, I
DS
(mA)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Drain Current, I
DS
(mA)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Gate to Source Voltage, V
GS
(V)
60
40
80
20
0
-4.0
-2.0
V
DS
= 3.0 V
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation, (P
T
) mW
Maximum Stable Gain, MSG (dB)
Maximum Available Gain, MAG (dB)
Forward Insertion Gain, |S
21
S
|
2
(dB)
500
400
300
200
100
0
50
100
150
200
250
V
DS
= 3 V
I
DS
= 10 mA
12
16
20
0
8
4
1
5
10 14 20
50
MSG.
|S
21S
|
2
0.5
MAG.
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
When K
1, MAG is undefined and MSG values are used.
= S
11
S
22
- S
21
S
12
MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
Ambient Temperature, T
A
(
C)
Frequency, f
(GHz)
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
60
80
40
20
100
0
4
3
5
2
1
-0.5 V
-1.0 V
-2.0 V
V
GS
= 0.0 V
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
P
NE722S01
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Input Power, P
in
(dBm)
Output Power, P
out
(dBm)
OUTPUT POWER vs. INPUT POWER
V
DS
= 3.0 V, I
D
= 30 mA
f
in
= 12 GHz
20
15
10
5
0
-5
-10
-15
10
5
0
-5
-10
15
NE722S01
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
2.0
0.912
-44.0
3.100
136.2
0.077
59.0
0.659
-30.2
2.5
0.876
-56.1
3.037
124.9
0.091
51.2
0.629
-38.0
3.0
0.828
-68.0
2.935
113.9
0.105
42.9
0.597
-46.4
3.5
0.784
-79.3
2.819
103.7
0.115
36.2
0.570
-53.5
4.0
0.737
-89.5
2.696
94.2
0.124
30.0
0.546
-60.9
4.5
0.699
-99.3
2.589
85.3
0.130
24.7
0.529
-67.2
5.0
0.660
-109.0
2.499
76.6
0.136
19.1
0.514
-73.6
5.5
0.620
-119.0
2.420
67.9
0.140
14.1
0.495
-79.6
6.0
0.583
-130.6
2.355
59.4
0.146
9.1
0.475
-85.2
6.5
0.547
-143.8
2.283
50.1
0.148
3.8
0.447
-91.5
7.0
0.516
-158.5
2.196
41.0
0.151
-1.6
0.408
-97.0
7.5
0.496
-173.7
2.098
32.2
0.149
-6.6
0.366
-103.7
8.0
0.500
172.6
2.016
23.7
0.152
-10.1
0.331
-110.8
8.5
0.510
159.9
1.920
15.3
0.150
-13.6
0.298
-120.4
9.0
0.526
148.4
1.834
7.2
0.151
-17.3
0.274
-133.2
9.5
0.540
138.4
1.749
-0.6
0.151
-20.3
0.265
-147.9
10.0
0.553
129.9
1.676
-7.9
0.152
-23.2
0.275
-160.7
10.5
0.566
120.6
1.608
-15.8
0.156
-26.3
0.297
-172.7
11.0
0.576
111.3
1.542
-23.5
0.157
-29.8
0.312
178.5
11.5
0.592
101.8
1.470
-31.1
0.157
-32.9
0.328
171.0
12.0
0.608
92.8
1.401
-38.4
0.158
-35.7
0.340
163.5
12.5
0.640
85.2
1.325
-45.7
0.159
-38.0
0.339
155.6
13.0
0.665
79.1
1.256
-52.7
0.160
-41.3
0.341
145.5
13.5
0.693
73.3
1.183
-59.7
0.158
-44.5
0.356
133.8
14.0
0.718
69.3
1.111
-66.4
0.162
-47.0
0.386
122.3
14.5
0.744
64.8
1.045
-73.3
0.163
-49.5
0.421
111.6
15.0
0.759
59.6
0.966
-79.7
0.159
-53.4
0.474
104.4
15.5
0.756
55.5
0.893
-85.4
0.159
-55.8
0.516
98.7
16.0
0.750
51.0
0.839
-91.0
0.160
-57.6
0.563
95.8
16.5
0.738
45.4
0.777
-96.7
0.158
-61.4
0.601
92.8
17.0
0.728
40.9
0.714
-101.5
0.158
-63.1
0.624
89.4
17.5
0.721
36.4
0.676
-105.7
0.156
-65.9
0.628
86.9
18.0
0.721
32.5
0.624
-109.8
0.158
-68.4
0.625
82.2
NE722S01
V
DS
= 3.0 V, I
DS
= 10 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
NE722S01
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
2.0
0.896
-48.3
3.721
134.0
0.063
59.9
0.547
-29.6
2.5
0.851
-61.5
3.606
122.4
0.077
53.2
0.519
-37.4
3.0
0.799
-74.1
3.449
111.3
0.086
45.1
0.489
-45.4
3.5
0.753
-86.1
3.275
101.1
0.095
39.6
0.464
-52.6
4.0
0.705
-97.0
3.102
91.6
0.102
34.1
0.443
-59.5
4.5
0.666
-107.3
2.957
82.7
0.106
29.5
0.431
-65.5
5.0
0.625
-117.5
2.834
74.0
0.111
24.9
0.419
-71.5
5.5
0.586
-128.3
2.724
65.3
0.115
20.6
0.406
-76.9
6.0
0.553
-140.6
2.627
56.8
0.122
17.0
0.390
-82.2
6.5
0.521
-154.2
2.522
47.7
0.125
12.6
0.366
-88.2
7.0
0.497
-169.4
2.402
39.0
0.128
8.5
0.334
-93.4
7.5
0.489
175.8
2.281
30.5
0.128
5.0
0.296
-99.7
8.0
0.501
162.9
2.176
22.5
0.131
1.8
0.267
-106.8
8.5
0.519
151.0
2.062
14.5
0.135
-1.2
0.234
-117.8
9.0
0.540
140.4
1.963
6.8
0.139
-3.4
0.209
-132.7
9.5
0.562
131.2
1.865
-0.7
0.142
-6.8
0.206
-150.0
10.0
0.575
123.2
1.786
-7.8
0.146
-9.9
0.221
-164.3
10.5
0.589
114.3
1.709
-15.4
0.151
-12.8
0.246
-177.2
11.0
0.602
105.5
1.637
-22.9
0.156
-16.7
0.265
173.7
11.5
0.619
96.4
1.554
-30.2
0.161
-20.5
0.285
166.1
12.0
0.633
88.0
1.480
-37.4
0.163
-23.9
0.299
158.1
12.5
0.666
80.9
1.400
-44.5
0.168
-27.4
0.303
149.9
13.0
0.690
75.2
1.321
-51.1
0.171
-30.5
0.307
139.1
13.5
0.715
70.0
1.241
-57.9
0.173
-33.9
0.326
127.4
14.0
0.740
66.4
1.169
-64.2
0.173
-37.3
0.358
116.2
14.5
0.769
62.0
1.101
-70.8
0.174
-41.0
0.396
106.2
15.0
0.780
57.0
1.021
-77.1
0.178
-45.3
0.450
99.5
15.5
0.778
52.5
0.945
-82.6
0.175
-48.6
0.494
94.8
16.0
0.774
48.2
0.888
-88.0
0.176
-51.4
0.540
92.0
16.5
0.759
42.7
0.824
-93.4
0.176
-56.1
0.578
89.4
17.0
0.750
38.1
0.767
-98.3
0.174
-58.3
0.601
86.3
17.5
0.739
33.9
0.721
-102.3
0.175
-61.1
0.604
84.0
18.0
0.741
30.2
0.672
-106.6
0.176
-63.3
0.599
79.2
NE722S01
V
DS
= 3.0 V, I
DS
= 30 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
SCHEMATIC
CGD_PKG
0.001pF
Rsx
0.01 ohms
Lgx
CDS_PKG
0.1PF
CGS_PKG
0.08pF
Rdx
1 ohms
Lsx
0.13nH
SOURCE
DRAIN
Rgx
1 ohms
GATE
0.71nH
Ldx
0.5nH
Q1
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
NE722S01
NONLINEAR MODEL
Parameter
Units
time
seconds
capacitance
farads
inductance
henries
resistance
ohms
voltage
volts
current
amps
UNITS
MODEL RANGE
Frequency:
0.1 to 18 GHz
Bias:
V
DS
= 2 V to 4 V, I
D
= 10 mA to 40 mA
Date:
02/2002
Parameters
Q1
Parameters
Q1
VTO
-2.24
RG
8
VTOSC
0
RD
0.5
ALPHA
8
RS
6
BETA
0.055
RGMET
0
TQGAMMA
0.04
TNOM
27
TQGAMMAAC
0.05
XTI
3
Q
1.5
EG
1.43
TQDELTA
0.25
VTOTC
0
VBI
1
BETATCE
0
IS
1e-14
FFE
1
N
1.3
FNC
(2)
150e-6
RIS
0
R
0.5
RID
0
P
1
TAU
3e-12
C
0.9
CDS
0.19e-12
RDB
250
CBS
1e-9
CGS
0.92e-12
CGD
0.05e-12
DELTA1
0.3
DELTA2
0.3
FC
0.5
VBR
Infinity
FET NONLINEAR MODEL PARAMETERS
(1)
(1) ADS TOM Model
(2) To simulate phase noise using AF/KF: AF = 1.5 KF = 2e-10
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
07/01/2004
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