PART NUMBER
NE97733
EIAJ
1
REGISTERED NUMBER
2SA1977
PACKAGE OUTLINE
33
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
T
Gain Bandwidth Product at V
CE
= -8 V, I
C
= -20 mA
GHz
6.0
8.5
NF
Noise Figure
at V
CE
= -8 V, I
C
= -3 mA
dB
1.5
3.0
|S
21E
|
2
Insertion Power Gain at V
CE
= -8 V, I
C
= -20 mA, f = 1 GHz
dB
8.0
12.0
h
FE
Forward Current Gain Ratio at V
CE
= -8 V, I
C
= -20 mA
20
40
100
I
CBO
Collector Cutoff Current at V
CB
= -10 V, I
E
= 0
A
-0.1
I
EBO
Emitter Cutoff Current at V
BE
= -1 V, I
C
= 0
A
-0.1
C
RE2
Feedback Capacitance at V
CB
= -10 V, I
E
= 0 mA, f = 1 MHz
pF
0.5
0.1
P
T
Total Power Dissipation
mW
200
PNP SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 8.5 GHz TYP
HIGH SPEED SWITCHING CHARACTERISTICS
NPN COMPLIMENT AVAILABLE: NE68133
HIGH INSERTION POWER GAIN:
|S
21E
|
2
= 12 dB at 1 GHz
DESCRIPTION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE97733
California Eastern Laboratories
The NE97733 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97733 offers
excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
NE97733
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
-20
V
CEO
Collector to Emitter Voltage
V
-12
V
EBO
Emitter to Base Voltage
V
-3
I
C
Collector Current
mA
-50
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +200
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
Total Power Dissipation, P
T
(mW)
Insertion Power Gain, |S
21E
|
2
(dB)
Gain Bandwidth Product, f
T
(GHz)
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
DC POWER DERATING CURVES
INSERTION GAIN vs.
FREQUENCY
Ambient Temperature, T
A
(
C)
Frequency, f (GHz)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain, H
FE
Collector Current, I
C
(mA)
Insertion Power Gain, |S
21E
|
2
(dB)
V
CE
= -8V
100
50
40
30
20
10
5
4
3
2
1
-0.1
-1.0
-10
-100
-1000
NE97733
FREE AIR
400
300
200
100
0
0
50
100
150
200
V
CE
= -8 V
I
C
= -20 mA
35
30
25
20
15
10
5
0
-5
-10
-15
0.1
0.2
0.3 0.4 0.5
1.0
2.0
3.0
V
CE
= -8 V
10
8
6
4
2
0
-1
-10
-100
V
CE
= -8 V
f = 1 GHz
5
10
15
0
-1
-10
100
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE97733
DC CURRENT GAIN
VS.
COLLECTOR CURRENT
OUTPUT CAPACITANCE
VS.
COLLECTOR TO BASE VOLTAGE
DC Current Gain, H
FE
Collector Current, I
C
(mA)
Collector Feed-back Capacitance, C
RE
(pF)
Collector to Base Voltage, V
CB
(V)
V
IN
R
S
V
OUT
R
L1
R
C1
R
C2
R
L2
V
BB
(-)
50
V
CC
(-)
V
EE
(+)
R
E
Sampling
Oscilloscope
V
OUT
V
IN
20 ns
t
OFF
(delay)
t
ON
(delay)
t
r
t
f
Parameter
Symbol
Vin = 1 V
Unit
TYP
Turn-on Delay Time
t
ON
(delay)
1.08
ns
Rise Time
t
r
0.66
ns
Turn-off Delay Time
t
OFF
(delay)
0.32
ns
Fall Time
t
f
0.78
ns
SWITCHING CHARACTERISTICS
V
IN
= 1 v, V
BB
= -0.5 V, R
C1
= R
C2
R
S
R
C
R
L1
R
L2
R
E
V
EE
V
CC
(
)
(
)
(
)
(
)
(
)
(V)
(V)
160
1 K
200
250
2.7 K
27
26.3
SWITCHING TIME MEASUREMENT CIRCUIT
-0.1
-1.0
-10
-100
-1000
1.0
10
20
30
40
50
100
V
CE
= -3 V
V
CE
= -2 V
V
CE
= -1 V
f = 1 MHz
1.5
1
0.5
0
-1
-10
-100
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
NE97733
V
CE
= -1 V, I
C
= -5 mA
FREQUENCY
S
11
S
21
S
12
S
22
K MAG
1
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
(GHz)
MAG
ANG MAG ANG MAG ANG
MAG ANG (dB)
0.50
0.428
-126.3
4.899
100.7
0.101
52.7
0.417
-54.0
0.77
16.8
0.80
0.382
-160.6
3.398
82.8
0.132
54.1
0.309
-60.2
0.97
14.1
1.00
0.374
-175.9
2.813
74.1
0.154
55.0
0.272
-64.5
1.04
11.5
1.50
0.387
155.1
2.002
56.8
0.213
54.6
0.230
-80.1
1.09
7.9
2.00
0.419
132.6
1.583
42.6
0.274
51.3
0.226
-100.1
1.07
6.0
2.50
0.461
114.5
1.323
30.6
0.336
46.5
0.247
-119.0
1.04
4.8
3.00
0.502
100.2
1.148
21.0
0.393
40.9
0.270
-133.8
1.01
4.1
4.00
0.552
82.6
0.948
7.0
0.501
29.4
0.267
-159.3
0.98
2.8
5.00
0.574
74.2
0.859
-4.4
0.599
16.0
0.218
155.9
0.98
1.6
V
CE
= -5 V, I
C
= -10 mA
0.50
0.251
-126.4
7.121
99.1
0.072
67.8
0.426
-38.9
0.91
19.9
0.80
0.213
-159.9
4.739
84.5
0.107
68.2
0.350
-39.9
1.00
16.0
1.00
0.207
-176.4
3.878
77.3
0.131
67.6
0.324
-41.9
1.03
13.7
1.50
0.225
151.5
2.708
62.5
0.191
64.2
0.288
-52.1
1.04
10.3
2.00
0.265
127.7
2.116
49.8
0.252
59.4
0.272
-67.9
1.03
8.2
2.50
0.316
109.8
1.754
38.6
0.310
53.5
0.275
-85.3
1.00
7.2
3.00
0.365
96.8
1.511
28.8
0.364
47.5
0.284 -100.1
0.98
6.2
4.00
0.428
82.3
1.218
13.5
0.467
36.4
0.269 -121.5
0.95
4.2
5.00
0.462
77.7
1.074
0.8
0.566
24.3
0.171 -148.4
0.94
2.8
V
CE
= -8 V, I
C
= -3 mA
0.50
0.626
-74.0
4.205
119.4
0.088
54.6
0.673
-32.7
0.56
16.8
0.80
0.447
-111.0
3.520
97.8
0.109
51.8
0.558
-38.2
0.79
15.1
1.00
0.374
-131.4
3.075
87.0
0.122
52.6
0.512
-41.0
0.91
14.0
1.50
0.302
-174.7
2.293
67.2
0.157
56.0
0.451
-49.9
1.05
10.2
2.00
0.310
151.1
1.824
51.9
0.202
57.8
0.427
-62.0
1.06
8.0
2.50
0.355
125.4
1.516
39.0
0.256
56.7
0.425
-76.0
1.01
7.0
3.00
0.407
106.9
1.301
28.4
0.314
53.7
0.433
-89.1
0.96
6.2
4.00
0.428
85.0
1.038
13.9
0.438
44.7
0.425 -110.2
0.90
3.7
5.00
0.503
74.6
0.930
3.7
0.573
32.3
0.328 -133.5
0.91
2.1
V
CE
= -8 V, I
C
= -20 mA
0.50
0.151
-140.9
8.095
95.5
0.067
74.7
0.389
-34.1
0.98
20.8
0.80
0.140
-172.1
5.268
83.1
0.105
73.5
0.334
-34.1
1.02
16.2
1.00
0.142
172.1
4.288
76.7
0.129
72.2
0.315
-36.1
1.03
14.1
1.50
0.170
141.7
2.974
63.2
0.191
66.9
0.285
-46.2
1.03
10.9
2.00
0.215
119.7
2.317
51.4
0.252
60.8
0.269
-61.6
1.02
8.9
2.50
0.268
104.0
1.918
40.7
0.309
54.6
0.268
-79.2
1.00
7.9
3.00
0.318
92.5
1.652
31.2
0.362
48.4
0.274
-94.3
0.98
6.6
4.00
0.379
80.9
1.332
15.8
0.459
36.9
0.257 -114.2
0.95
4.6
5.00
0.416
79.2
1.169
2.6
0.552
25.3
0.154 -134.6
0.94
3.3
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
0.2
0.4
0.6
0.8 1
1.5
2
3
4 5
10 20
50
-50
20
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
-0.2
-0.4
-0.6
-0.8
-1
-1.5
-2
-3
-4
-5
-10
-20
S
11
S
22
270
180
225
315
135
0
90
45
S
12
S
21
1.0
2.0
3.0
4.0
0.1 0.2 0.3
0.4 0.5
97733
V
CE
= -8 V, I
C
= -3 mA
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 33
(SOT-23)
OUTLINE 33
RECOMMENDED P.C.B. LAYOUT
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
NE97733
0.16
+0.10
-0.06
0.65
+0.10
-0.15
0.4
+0.10
-0.05
1
2
3
0 to 0.1
2.8
1.9
1.5
(ALL LEADS)
0.8
1.1 to 1.4
2.9
0.2 0.95
+0.2
-0.3
+0.2
-0.1
2.4
3
2
1.9
0.95
1.0
1
0.8
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -7/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PART NUMBER
QUANTITY
PACKAGING
NE97733-T1
3000
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