PNP SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 5.5 GHz TYP
HIGH SPEED SWITCHING CHARACTERISTICS
NPN COMPLIMENT AVAILABLE: NE02133
HIGH INSERTION POWER GAIN:
|S
21E
|
2
= 10 dB at 1 GHz
DESCRIPTION
NE97833
California Eastern Laboratories
The NE97833 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97833 offers
excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
PART NUMBER
NE97833
EIAJ
1
REGISTERED NUMBER
2SA1978
PACKAGE OUTLINE
33
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
T
Gain Bandwidth Product at V
CE
= -10 V, I
C
= -15 mA
GHz
4.0
5.5
NF
Noise Figure
at V
CE
= -10 V, I
C
= -3 mA
dB
2.0
3.0
|S
21E
|
2
Insertion Power Gain at V
CE
= -10 V, I
C
= -15 mA, f = 1 GHz
dB
8.0
10.0
h
FE
Forward Current Gain Ratio at V
CE
= -10 V, I
C
= -15 mA
20
40
100
I
CBO
Collector Cutoff Current at V
CB
= -10 V, I
E
= 0
A
-0.1
I
EBO
Emitter Cutoff Current at V
BE
= -2 V, I
C
= 0
A
-0.1
C
RE
2
Feedback Capacitance at V
CB
= -10 V, I
E
= 0 mA, f = 1 MHz
pF
0.5
1.0
P
T
Total Power Dissipation
mW
200
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE97833
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
-20
V
CEO
Collector to Emitter Voltage
V
-12
V
EBO
Emitter to Base Voltage
V
-3
I
C
Collector Current
mA
-50
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +200
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
Total Power Dissipation, P
T
(mW)
Insertion Power Gain, |S
21E
|
2
Gain Bandwidth Product, f
T
(GHz)
Insertion Power Gain, |S
21E
|
2
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
DC POWER DERATING CURVES
INSERTION GAIN vs. FREQUENCY
Ambient Temperature, T
A
(
C)
Frequency, f (MHz)
GAIN BANDWIDTH
vs. COLLECTOR CURRENT
INSERTION GAIN
vs. COLLECTOR CURRENT
DC CURRENT GAINS
VS.
COLLECTOR CURRENT
DC Current Gain, H
FE
Collector Current, I
C
(mA)
100
10
1
-0.1
-1.0
-10
-100
-1000
V
CE
= -3 V
V
CE
= -2 V
V
CE
= -1 V
NE97833
FREE AIR
400
300
200
100
0
0
50
100
150
200
30
20
10
0
-10
100
200
300
500
1000
3000
V
CE
= -10 V
I
C
= -15 mA
V
CE
= 1 V
I
C
= 5 mA
10
12
14
8
6
4
2
0
1
10
100
f = 1 GHz
V
CE
= -3 V
V
CE
= -1 V
V
CE
= -10 V
V
CE
= -3 V
V
CE
= -1 V
V
CE
= -10 V
f = 1 GHz
6
8
10
12
14
0
2
4
1
10
100
V
IN
= 1 v, V
BB
= -0.5 V, R
C1
= R
C2
R
S
R
C
R
L1
R
L2
R
E
V
EE
V
CC
(
)
(
)
(
)
(
)
(
)
(V)
(V)
160
1 K
200
250
2.7 K
27
26.3
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE97833
DC CURRENT GAIN
VS.
COLLECTOR CURRENT
NOISE FIGURE
VS.
COLLECTOR CURRENT
DC Current Gain, H
FE
Collector Current, I
C
(mA)
Noise Figure, NF
Collector Current, I
C
(mA)
V
IN
R
S
V
OUT
R
L1
R
C1
R
C2
R
L2
V
BB
(-)
50
V
CC
(-)
V
EE
(+)
R
E
Sampling
Oscilloscope
V
OUT
V
IN
20 ns
t
OFF
(delay)
t
ON
(delay)
t
r
t
f
t
ON
(delay)
Turn-on Delay Time
ns
1.10
t
r
Rise Time
ns
0.77
t
OFF
(delay)
Turn-off Delay Time
ns
0.40
t
f
Fall Time
ns
0.79
SWITCHING CHARACTERISTICS
SWITCHING TIME MEASUREMENT CIRCUIT
V
IN
= 1 V
UNITS
PARAMETERS
UNITS
TYP
-0.1
-1.0
-10
-100
-1000
1.0
10
100
V
CE
= -10 V
V
CE
= 10 V
f = 1 GHz
6
4
2
0
1
10
100
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
NE97833
V
CE
= -5 V, I
C
= -10 mA
FREQUENCY
S
11
S
21
S
12
S
22
K MAG
1
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
(GHz)
MAG
ANG MAG ANG MAG ANG
MAG ANG (dB)
0.50
0.274
-149.2
6.102
96.9
0.063
68.1
0.493
-30.9
0.97
19.9
0.80
0.273
-177.0
4.037
82.0
0.093
70.1
0.432
-32.2
1.07
14.7
1.00
0.278
169.8
3.303
74.5
0.114
70.3
0.412
-34.5
1.09
12.8
1.50
0.308
144.6
2.311
58.7
0.170
68.1
0.381
-44.8
1.08
9.6
2.00
0.352
125.0
1.808
45.3
0.229
63.9
0.362
-59.4
1.03
7.8
2.50
0.402
109.1
1.496
33.5
0.288
58.3
0.359
-75.9
0.99
7.2
3.00
0.449
96.4
1.281
23.6
0.345
52.4
0.364
-91.0
0.95
5.7
4.00
0.506
79.7
1.023
9.1
0.458
40.7
0.350
-113.5
0.91
3.5
5.00
0.527
71.1
0.908
-1.8
0.574
27.4
0.246
-138.8
0.92
2.0
V
CE
= -8 V, I
C
= -10 mA
0.50
0.252
-140.2
6.426
98.5
0.060
68.7
0.523
-29.0
0.95
20.3
0.80
0.240
-171.6
4.270
83.5
0.089
70.6
0.463
-30.1
1.05
15.4
1.00
0.243
173.7
3.496
76.0
0.109
70.9
0.443
-32.3
1.08
13.4
1.50
0.272
145.9
2.445
60.5
0.162
60.5
0.515
-43.9
1.11
9.8
2.00
0.316
125.3
1.911
47.2
0.219
65.0
0.393
-55.2
1.02
8.4
2.50
0.369
109.0
1.582
35.6
0.276
59.8
0.388
-70.6
0.98
7.6
3.00
0.418
96.4
1.353
25.5
0.333
54.2
0.392
-85.0
0.94
6.1
4.00
0.479
79.9
1.076
10.7
0.445
42.9
0.379 -106.3
0.90
3.8
5.00
0.503
71.7
0.950
-0.4
0.563
30.2
0.278 -127.3
0.90
2.3
V
CE
= -10 V, I
C
= -15 mA
0.50
0.555
-80.8
4.097
116.8
0.076
55.1
0.697
-28.4
0.65
17.3
0.80
0.399
-121.8
3.325
94.8
0.094
53.5
0.600
-32.6
0.89
15.5
1.00
0.348
-143.5
2.864
84.2
0.106
55.4
0.564
-35.2
1.00
14.3
1.50
0.314
173.5
2.107
64.5
0.140
69.0
0.411
-39.4
1.07
10.2
2.00
0.342
142.8
1.669
49.0
0.186
62.8
0.494
-56.1
1.08
7.8
2.50
0.393
120.2
1.382
36.0
0.241
61.5
0.490
-70.2
1.00
7.4
3.00
0.446
103.4
1.179
25.6
0.302
57.9
0.496
-83.7
0.93
5.9
4.00
0.515
81.7
0.934
11.9
0.433
47.8
0.484 -105.8
0.87
3.3
5.00
0.529
69.6
0.844
3.0
0.575
34.3
0.382 -128.7
0.90
1.7
V
CE
= -10 V, I
C
= -3 mA
0.50
0.214
-153.1
6.846
96.2
0.058
73.2
0.506
-27.0
0.99
20.7
0.80
0.215
179.7
4.489
82.4
0.087
74.0
0.456
-27.9
1.06
15.6
1.00
0.221
166.8
3.664
75.4
0.108
73.7
0.439
-30.1
1.07
13.7
1.50
0.254
141.5
2.554
60.6
0.163
70.6
0.441
-41.8
1.05
10.6
2.00
0.300
122.3
1.992
47.7
0.220
66.0
0.393
-52.7
1.01
8.9
2.50
0.352
107.1
1.648
36.2
0.276
60.4
0.387
-68.0
0.97
7.8
3.00
0.402
95.0
1.410
26.3
0.331
54.6
0.389
-82.1
0.94
6.3
4.00
0.463
79.5
1.121
11.3
0.440
43.4
0.377 -102.6
0.89
4.1
5.00
0.489
72.1
0.984
-0.2
0.555
31.0
0.277 -121.3
0.89
2.5
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
NE97833
V
CE
= -8 V, I
C
= -10 mA
0.2
0.4
0.8 1
1.5
2
3
4 5
10 20
50
-50
20
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
-0.2
-0.4
-0.6
-0.8
-1
-1.5
-2
-3
-4
-5
-10
-20
S
11
S
22
0.6
270
180
225
315
135
0
90
45
S
12
S
21
2.5
5.0
0.1 0.2 0.3
0.4 0.5
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 33
(SOT-23)
OUTLINE 33
RECOMMENDED P.C.B. LAYOUT
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
NE97833
PART NUMBER
QUANTITY
PACKAGING
NE97833-T1
3000
Tape & Reel
ORDERING INFORMATION
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -7/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
0.16
+0.10
-0.06
0.65
+0.10
-0.15
0.4
+0.10
-0.05
1
2
3
0 to 0.1
2.8
1.9
1.5
(ALL LEADS)
0.8
1.1 to 1.4
2.9
0.2 0.95
+0.2
-0.3
+0.2
-0.1
2.4
3
2
1.9
0.95
1.0
1
0.8
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