The information in this document is subject to change without notice.
N-CHANNEL GaAs MESFET
NES1823P-100
100W L-BAND PUSH-PULL POWER GaAs MESFET
1998
Document No. P13839EJ1V0DS00 (1st edition)
Date Published November 1998 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for
IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride
passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.
FEATURES
Push-pull type N-channel GaAs MESFET
High Output Power
: 100 W TYP.
High Linear Gain
: 11.0 dB TYP.
High Drain Efficiency : 50 % TYP. @V
DS
= 10 V, I
Dset
= 6 A, f = 2.2 GHz
ORDERING INFORMATION (PLAN)
Part Number
Package
Supplying Form
NES1823P-100
T-92
ESD protective envelope
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-100)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
15
V
Gate to Source Voltage
V
GSO
7
V
Drain Current
I
D
76
A
Gate Current
I
G
440
mA
Total Power Dissipation
P
T
220
Note
W
Channel Temperature
T
ch
175
C
Storage Temperature
T
stg
65 to +175
C
Note T
C
= 25C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
Preliminary Data Sheet
2
NES1823P-100
RECOMMENDED OPERATING LIMITS
Parameter
Symbol
Test Condition
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
10.0
10.0
V
Gain Compression
Gcomp
3.0
dB
Channel Temperature
T
ch
+150
C
Set Drain Current
Note 1
I
Dset
6.0
8.0
A
Gate Resistance
Note 2
R
g
10
12.5
Notes 1. I
Dset
= 3.0 A each drain, V
DS
= 10 V, RF OFF.
2. R
g
is the series resistance between the gate supply and FET gate.
ELECTRICAL CHARACTERISTICS (T
A
= +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
I
DSS
V
DS
= 2.5 V, V
GS
= 0 V
76
A
Pinch-off Voltage
V
p
V
DS
= 2.5 V, I
DS
= 330 mA
4.0
2.6
V
Thermal Resistance
R
th
Channel to Case
0.6
0.8
C/W
Output Power
P
out
49.0
50.0
dBm
Drain Current
I
D
20.0
32.5
A
Drain Efficiency
D
50
%
Linear Gain
G
L
f = 2.2 GHz, V
DS
= 10 V
P
in
= +42.5 dBm, R
g
= 12.5
I
Dset
= 6.0 A Total (RF OFF)
Note
9.0
11.0
dB
Note I
Dset
= 3.0 A each drain
Preliminary Data Sheet
3
NES1823P-100
TYPICAL CHARACTERISTICS (T
A
= +25C)
POWER MATCHING AND IM
3
MATCHING
NEC produces two type matching circuits, power matching and IM
3
matching. Power matching circuit is used our
production line. And the IM
3
matching circuit is useful for the customers to design the special tuning application. The
power matching is designed as this, input impedance is gain-matching, output is matched with power matching
impedance which is calculated with large signal simulation model. The IM
3
matching is designed as this, input
impedance is matched to the impedance which has the direction of decreasing S
21
phase-shift, output impedance is
matched to the almost same as the efficiency matching impedance. Those typical RF data are shown as this, G
L
=
10.2 dB P
out
= 50.0 dBm IM
3
= 28 dBc at power matching, G
L
= 10.0 dB P
out
= 49.3 dBm IM
3
= 31 dBc at IM
3
matching (@2 tone P
out
= 40 dBm).
Preliminary Data Sheet
4
NES1823P-100
55
50
45
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
0
10
20
25
30
35
40
45
Output Power P
out
(dBm)
Drain Efficiency
D
(%)
Drain Current I
D
(A)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY
vs. INPUT POWER
POWER MATCHING
V
DS
f
R
g
= 10 V
= 2.2 GHz
= 12.5
I
Dset
= 2 A
I
Dset
= 4 A
I
Dset
= 6 A
P
out
I
D
Input Power P
in
(dBm)
D
Preliminary Data Sheet
5
NES1823P-100
55
50
45
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
0
10
20
25
30
35
40
45
Output Power P
out
(dBm)
Drain Efficiency
D
(%)
Drain Current I
D
(A)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY
vs. INPUT POWER
DISTORTION MATCHING
V
DS
f
R
g
= 10 V
= 2.12 GHz
= 12.5
I
Dset
= 6 A
I
Dset
= 8 A
I
Dset
= 10 A
P
out
I
D
Input Power P
in
(dBm)
D
Preliminary Data Sheet
6
NES1823P-100
10
15
20
25
30
35
40
45
50
55
60
25
30
35
40
45
50
3rd Intermodulation Distortion IM
3
(dBc)
3rd INTERMODULATION DISTORTION vs.
2 TONES OUTPUT POWER
POWER MATCHING
2 tones Output Power P
out
(2 tones) (dBm)
V
DS
f
f
R
g
= 10 V
= 1 MHz
= 2.2 GHz
= 12.5
I
Dset
= 2 A
I
Dset
= 4 A
I
Dset
= 6 A
2A
4A
6A
Preliminary Data Sheet
7
NES1823P-100
10
15
20
25
30
35
40
45
50
55
60
25
30
35
40
45
50
3rd Intermodulation Distortion IM
3
(dBc)
3rd INTER MODULATION DISTORTION vs.
2TONES OUTPUT POWER
DISTORTION MATCHING
V
DS
f
f
R
g
= 10 V
= 1 MHz
= 2.12 GHz
= 12.5 V
I
Dset
= 6 A
I
Dset
= 8 A
I
Dset
= 10 A
2 tones Output Power P
out
(2 tones) (dBm)
Preliminary Data Sheet
8
NES1823P-100
10
15
20
25
30
35
40
45
50
55
60
25
30
35
40
45
50
3rd Intermodulation Distortion IM
3
(dBc)
3rd INTER MODULATION DISTORTION vs.
2TONES OUTPUT POWER
DISTORTION MATCHING
V
DS
f
f
R
g
= 10 V
= 20 MHz
= 2.12 GHz
= 12.5
I
Dset
= 6 A
I
Dset
= 8 A
I
Dset
= 10 A
2 tones Output Power P
out
(2 tones) (dBm)
Preliminary Data Sheet
9
NES1823P-100
S-Parameters
V
DS
= 10 V, I
Dset
= 3 A each drain
START 1 GHz, STOP 3 GHz, STEP 40 MHz
Marker 2.2 GHz
+90
+135
+45
180
0
135
90
45
1
2
0.5
1
2
0.5
+90
+135
+45
180
0
135
90
45
1.0
0.5
2.0
0
0.5
1.0
2.0
1.0
0.5
2.0
0
0.5
1.0
2.0
S
11
S
12
S
21
S
22
R
max
. = 1
R
max
. = 0.1
R
max
. = 5
R
max
. = 1
Preliminary Data Sheet
10
NES1823P-100
S-Parameters
V
DS
= 10 V, I
Dset
= 3 A each drain
FREQUENCY
S
11
S
21
S
12
S
22
GHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
1.000
1.040
1.080
1.120
1.160
1.200
1.240
1.280
1.320
1.360
1.400
1.440
1.480
1.520
1.560
1.600
1.640
1.680
1.720
1.760
1.800
1.840
1.880
1.920
1.960
2.000
2.040
2.080
2.120
2.160
2.200
2.240
2.280
2.320
2.360
2.400
2.440
2.480
2.520
2.560
2.600
2.640
2.680
2.720
2.760
2.800
2.840
2.880
2.920
2.960
3.000
0.959
0.959
0.956
0.956
0.956
0.950
0.946
0.941
0.941
0.935
0.927
0.920
0.912
0.903
0.890
0.876
0.858
0.839
0.815
0.789
0.756
0.719
0.674
0.616
0.548
0.474
0.405
0.371
0.403
0.477
0.553
0.622
0.664
0.693
0.712
0.719
0.723
0.721
0.713
0.701
0.684
0.661
0.632
0.594
0.542
0.483
0.499
0.530
0.555
0.587
0.625
173.5
172.7
171.7
170.8
170.8
168.7
167.5
166.2
164.8
163.3
161.7
159.9
158.1
156.0
153.9
151.5
149.1
146.6
143.8
141.2
138.1
135.1
132.1
129.1
127.3
127.6
132.9
144.4
156.0
160.5
159.4
155.8
150.3
144.6
138.7
132.7
127.3
120.8
114.1
106.5
98.3
88.7
78.0
65.6
51.8
40.7
29.6
10.9
9.1
28.3
46.2
0.857
0.537
0.478
0.429
0.419
0.408
0.424
0.416
0.475
0.540
0.577
0.728
0.780
0.956
1.001
1.183
1.262
1.364
1.542
1.585
1.823
1.968
2.157
2.379
2.757
2.806
3.193
3.181
3.141
3.069
2.740
2.545
2.246
2.008
1.732
1.576
1.333
1.181
1.131
0.887
0.965
0.751
0.851
0.727
0.735
0.650
0.714
0.636
0.689
0.654
0.625
65.1
58.8
57.7
58.5
59.5
62.7
60.9
66.8
68.3
68.3
67.2
66.4
59.2
55.2
46.2
41.6
30.6
24.7
16.7
6.3
3.4
11.4
16.4
28.8
40.5
54.6
70.0
85.4
103.6
118.7
133.2
150.0
157.0
175.7
178.2
165.7
161.8
156.5
149.7
145.0
142.0
135.7
134.8
125.7
119.7
119.2
109.0
106.7
94.9
88.7
72.9
0.006
0.006
0.006
0.007
0.007
0.008
0.008
0.009
0.009
0.010
0.012
0.012
0.014
0.015
0.017
0.018
0.021
0.022
0.025
0.028
0.030
0.036
0.038
0.044
0.045
0.054
0.055
0.059
0.058
0.054
0.051
0.048
0.042
0.036
0.038
0.031
0.033
0.029
0.028
0.028
0.028
0.026
0.027
0.026
0.023
0.022
0.020
0.023
0.023
0.022
0.024
62.5
57.4
53.7
51.0
48.3
47.1
43.5
43.8
37.8
34.8
32.1
28.6
20.2
18.9
9.6
7.7
1.8
8.4
18.3
25.1
36.7
45.7
58.5
74.2
85.5
103.2
120.7
140.4
159.5
179.6
168.1
147.2
135.8
123.9
114.5
100.7
94.9
80.3
74.3
65.5
46.9
44.9
27.6
18.4
3.4
5.7
7.0
15.0
24.8
36.4
47.5
0.943
0.924
0.922
0.914
0.904
0.898
0.880
0.866
0.851
0.832
0.814
0.794
0.776
0.758
0.739
0.720
0.701
0.683
0.663
0.644
0.625
0.606
0.583
0.563
0.535
0.499
0.461
0.436
0.443
0.483
0.543
0.605
0.660
0.708
0.749
0.783
0.804
0.823
0.848
0.860
0.875
0.882
0.894
0.900
0.907
0.915
0.917
0.923
0.928
0.931
0.932
171.2
166.7
165.7
164.2
162.7
161.5
159.8
158.2
156.4
154.7
152.8
150.9
148.9
146.8
144.5
142.0
139.5
136.7
133.6
130.0
125.8
120.5
113.6
104.6
91.7
74.1
50.3
19.8
14.0
44.9
69.8
89.0
103.5
115.0
124.2
131.9
136.9
142.7
147.4
151.8
155.2
158.4
161.5
163.8
166.2
168.7
170.4
172.2
174.0
175.7
177.1
Preliminary Data Sheet
11
NES1823P-100
CIRCUIT DESIGN
The matching circuit of package inside consists of bond-wire, chip-capacitor and microstrip line on the alumina
substrate. The package-lead impedance is designed as 25
connecting to the external matching circuit, in the
external circuit design, the microstrip line impedance is 25
, conjugate with package impedance, then the
impedance is connected to balun, it is 1:2 balun structure, finally connected to 50
. Balun technology has some
advantage over single-ended device, minimize matching-loss with decrease of impedance change ratio and cancel
the even mode harmonic frequency for IM
3
performance. The balun circuit is employed for this product.
BALUN DESIGN
The balun design is the key for these high power push-pull structure device. NEC designed low insertion loss
microstrip balun for this product. What is the reason of our choice? One is the repeatability of assembly, and the
other is its performance. Microstrip balun performance tolerance is small because of its simple structure. So the
balun performance is stable and repeatable between NEC and customers. And its insertion loss is 0.2 dB less than
coaxial balun 0.3 dB, also Its band width is better than coaxial balun. The microstrip balun is consists of microstrip
pattern and cavity, therefore its insertion loss and band width due to its parameter design. Those parameters are
optimized with simuration. : (substrate duroid
r = 2.2 t = 0.8 mm)
Then the phase difference between two ports is 180
4, insertion loss is 0.2 dB from 1 to 3 GHz.
DC STABILITY (AVOID OSCILLATION)
The function of DC-cut capacitor arranged between transformer and microstrip balun is avoid DC oscillation.
When the gate is pinch-off, a few pinch-off voltage (VP) difference of each port occur the loop current, then start DC
oscillation in the area of pinch-off. Because of this reasons, the DC-cut capacitor is need to this microstrip balun
assemble. Additionally, the ground of transformer substate is effective to DC oscillation, so that five screws are
arranged at the middle of substrate.
Preliminary Data Sheet
12
NES1823P-100
RF TEST FIXTURE
IN
OUT
25
50
25
50
25
25
Input MS Balun
Output MS Balun
device
180
0
0
180
transformer
transformer
DC CUT
DC CUT 20 pF
2
1 000 pF
4.7 F
4.7 F
4.7 F
cavity (depth = 1.2 mm)
1 000 pF
4.7 F
cavity (depth = 1.2 mm)
Series R = 510
IN
39 pF
Input MS Balun
Output MS Balun
OUT
R
g
=5
R
g
= 10
VGS
VDS
device
chip C 2.2 F
1 000 pF
Preliminary Data Sheet
13
NES1823P-100
FIGURES OF SUBSTRATE (UNIT: mm)
BALUN (FACE)
0
22.75
28.25
33.75
41.25
46.75
52.25
61.01
50
46.92
46.5
43.13
41
28.5
23
22.5
20
20.5
19
17
3.08
0
75
+0 0.1
+0
0.1
72.22
59.25
41.75
39.75
38.75
37.75
35.25
33.25
10.75
8.25
2.78
0
0
18
20.5
C2.5
2-C5.5
2-C1.5
6 3
0.5
0.5
5 adjusting patterns at a 0.5 mm pitch
BALUN (BACK)
49.5
5.3
0.5
7.5
13.5
21.5
34.5
49.5
9
10
6
5.5
17
3
1.5
61
6.5
19.5
20.5
Preliminary Data Sheet
14
NES1823P-100
TRANSFORMER
4
1
4.5
2
4
4
15.5
35
61
61.5
16 1
4 3
5 3.5
through hole
1
1
1.8
6.5
2
2
3
7
10
3
7.8
18.8
30
70
65
75
+0
0.1
30
+0 0.1
1
1
1
92 2
3.5
5
5
5
10
15
2.5
5
t = 0.8 mm
r
= 2.2
Preliminary Data Sheet
15
NES1823P-100
PACKAGE DIMENSIONS (UNIT: mm)
4.0
0.3
31.6
0.3
S
8.0
17.4
0.3
9.7
0.3
35.2
0.3
2.4
0.3
S
R1.2
0.3
D1
D2
G1
G2
45
2.4
0.2
4.75 MAX.
1.8
0.2
G1, G2: Gate
D1, D2: Drain
S : Source
Preliminary Data Sheet
16
NES1823P-100
RECOMMENDED MOUNTING CONDITION FOR CORRECT USE
(1) Fix to a heatsink or mount surface completely with screw at the four holes of the flange.
(2) Recommended torque strength of the screw is 3 kgF typical using M2.3 type screw.
(3) Recommended flatness of the mount surface is less than
10
m. (roughness of surface is
)
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Partial Heating
Pin temperature: 260C
Time: 5 seconds or less (per pin row)
For details of recommended soldering conditions, please contact your local NEC sales office.
Preliminary Data Sheet
17
NES1823P-100
[MEMO]
Preliminary Data Sheet
18
NES1823P-100
[MEMO]
Preliminary Data Sheet
19
NES1823P-100
[MEMO]
NES1823P-100
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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