1996
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3F to NNCD12F
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3F to NNCD12F Series include two elements in
3PIN Mini Mold Package having allowable power dissipation of
200 mW.
FEATURES
Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
APPLICATIONS
External interface circuit E.S.D protection.
Circuits for Waveform clipper, Surge absorber.
Document No. D11774EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(in millimeters)
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(DOUBLE TYPE, ANODE COMMON)
3PIN MINI MOLD
MAXIMUM RATINGS (T
A
= 25
C)
Power Dissipation
P
200 mW
(Total)
Surge Reverse Power
P
RSM
100 W (t
T
= 10
s 1 pulse) Fig. 6
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
55
C to +150
C
2.8 0.2
1.5
0.65
+0.1
0.15
0.4
+0.1
0.05
0.16
+0.1
0.06
0.4
0.95
0.3
0.95
2.9 0.2
1.1 to 1.4
0 to 0.1
+0.1
0.05
3
Marking
2
1
2
3
A
K2
K1
1
PIN CONNECTION
1. K1: Cathode 1
2. K2: Cathode 2
3. A : Anode (common)
SC-59 (EIAJ)
NNCD3.3F to NNCD12F
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C) (A-K1, A-K2)
Type Number
Breakdown Voltage
Note 1
Dynamic
Reverse Leakage
Capacitance
E.S.D Voltage
V
BR
(V)
Impedance
Note 2
I
R
(
A)
C
t
(pF)
(kV)
Zz (
)
MIN.
MAX.
I
T
(mA)
MAX.
I
T
(mA)
MAX.
V
R
(V)
TYP.
TEST
MIN.
TEST
CONDITION
CONDITION
NNCD3.3F
3.10
3.50
5
130
5
20
1.0
220
30
NNCD3.6F
3.40
3.80
5
130
5
10
1.0
210
30
NNCD3.9F
3.70
4.10
5
130
5
10
1.0
200
30
NNCD4.3F
4.01
4.48
5
130
5
10
1.0
180
30
NNCD4.7F
4.42
4.90
5
130
5
10
1.0
170
30
NNCD5.1F
4.84
5.37
5
130
5
5
1.5
160
30
C = 150 pF
NNCD5.6F
5.31
5.92
5
80
5
5
2.5
140
V
R
= 0 V
30
R = 330
NNCD6.2F
5.86
6.53
5
50
5
2
3.0
120
f = 1 MHz
30
(IEC1000
NNCD6.8F
6.47
7.14
5
30
5
2
3.5
110
30
-4-2)
NNCD7.5F
7.06
7.84
5
30
5
2
4.0
90
30
NNCD8.2F
7.76
8.64
5
30
5
2
5.0
90
30
NNCD9.1F
8.56
9.55
5
30
5
2
6.0
90
30
NNCD10F
9.45
10.55
5
30
5
2
7.0
80
30
NNCD11F
10.44
11.56
5
30
5
2
8.0
70
30
NNCD12F
11.42
12.60
5
35
5
2
9.0
70
30
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at I
T
give a small A.C. signal.
NNCD3.3F to NNCD12F
3
TYPICAL CHARACTERISTICS (T
A
= 25
C)
0
250
200
150
100
50
0
25
50
75
T
A
- Ambient Temperature - C
P - Power Dissipation - mW
100
125
150
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
100 m
10 m
1 m
100
10
1
100 n
10 n
1 n
0
1
2
3
4
5
6
7
8
9 10
V
BR
- Breakdown Voltage - V
I
T
- On State Current - A
0
7
8
9 10 11 12 13 14 15
V
BR
- Breakdown Voltage - V
I
T
- On State Current - A
NNCD9.1F
NNCD8.2F
NNCD7.5F
NNCD6.8F
NNCD3.3F
NNCD3.3F
NNCD3.9F
NNCD4.3F
NNCD4.7F
100 m
10 m
1 m
100
10
1
100 n
10 n
1 n
NNCD5.1F
NNCD5.6F
NNCD6.2F
NNCD12F
NNCD10F
NNCD11F
Fig. 2 I
T
- V
BR
CHARACTERISTICS
Fig. 3 I
T
- V
BR
CHARACTERISTICS
NNCD3.3F to NNCD12F
4
0.1
1
10
100
I
T
- On State Current - mA
1 000
100
10
1
Z
Z
- Dynamic Impedance -
NNCD3.9F
NNCD5.6F
NNCD10F
NNCD7.5F
NNCD4.7F
NNCD5.1F
TYP.
Fig. 4 Z
Z
- I
T
CHARACTERISTICS
1 m
10 m
100 m
1
10
100
5 000
1 000
100
10
5
t - Time - s
Z
th
- Transient Thermal Impedance - C/W
NNCD [ ] F
625 C/W
Fig. 5 TRANSIENT THERMAL IMPEDANCE
100
1
10
1 m
10 m
100 m
1 000
100
10
1
t
T
- Pulse Width - s
P
RSM
- Surge Reverse Power - W
NNCD [ ] F
T
A
= 25 C
Non-repetitive
P
RSM
t
T
Fig. 6 SURGE REVERSE POWER RATING
NNCD3.3F to NNCD12F
5
Sample Application Circuits
Palallel
Interface
Micro
com.
Di
Interface Cable
Note Set
Printer, P.D.C, T.V Game etc.
Di
Conecter
PC
(CD ROM)
Set
Note
PDF 
ZIP