DATA SHEET
1994
Printed in Japan
SILICON TRANSISTOR ARRAY
DESCRIPTION
The
PA1428A is NPN silicon epitaxial Darlington Power
Transistor Array that built in Surge Absorber 4 circuits
designed for driving solenoid, relay, lamp and so on.
FEATURES
Surge Absorber built in.
Easy mount by 0.1 inch of terminal interval.
High h
FE
for Darlington Transistor.
ORDERING INFORMATION
Part Number
Package
Quality Grade
PA1428AH
10 Pin SIP
Standard
Please refer to "Quality grade on NEC Semiconductor
Device" (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 C)
Collector to Base Voltage
V
CBO
60
10
V
Collector to Emitter Voltage
V
CEO
60
10
V
Emitter to Base Voltage
V
EBO
8
V
Surge Sustaining Energy
E
CEO(sus)
30
mJ/unit
Collector Current (DC)
I
C(DC)
2
A/unit
Collector Current (pulse)
I
C(pulse)
*
3
A/unit
Base Current (DC)
I
B(DC)
0.2
A/unit
Total Power Dissipation
P
T1
**
3.5
W
Total Power Dissipation
P
T2
***
28
W
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
55 to +150
C
* PW
350
s, Duty Cycle
2 %
** 4 Circuits, T
a
= 25 C
*** 4 Cuircuits, T
c
= 25 C
Document No. IC-3479
(O.D. No. IC-8359)
Date Published September 1994 P
PA1428A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
1.4
1
0.6 0.2
2.54
0.5 0.2
1.4
4.0
10
10 MIN.
2.5
2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3
2
1
5
4
7
6
10
9
8
(B)
R
1
(E)
(C)
R
2
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
R
1
= 10 k
R
2
= 900
.
.
.
.
The information in this document is subject to change without notice.
PA1428A
2
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Leakage Current
I
CBO
1
A
V
CB
= 40 V, I
E
= 0
Emitter Leakage Current
I
EBO
5
mA
V
EB
= 5 V, I
C
= 0
Collector to Emitter
V
CEO(sus)
50
60
70
V
I
C
= 1 A, L = 1 mH
Sustaining Voltage
DC Current Gain
h
FE1
*
2000
20000
--
V
CE
= 2 V, I
C
= 1 A
DC Current Gain
h
FE2
*
500
--
V
CE
= 2 V, I
C
= 2 A
Collector Saturation Voltage
V
CE(sat)
*
1.0
1.5
V
I
C
= 1 A, I
B
= 1 mA
Base Saturation Voltage
V
BE(sat)
*
1.7
2
V
I
C
= 1 A, I
B
= 1 mA
Turn On Time
t
on
0.4
s
Storage Time
t
stg
1.5
s
Fall Time
t
f
0.4
s
* PW
350
s, Duty Cycle
2 %/pulsed
SWITCHING TIME TEST CIRCUIT
I
C
= 1 A
I
B1
= I
B2
= 2 mA
V
CC
= 50 V, R
L
= 50
See test circuit
.
.
V
IN
I
B1
I
C
R
L
= 50
I
B2
PW
PW = 50 s
Duty Cycle
2 %
V
BB
= 5 V
V
CC
= 50 V
TUT
t
on
90 %
10 %
Collector Current
Wave Form
Base Current
Wave Form
t
stg
t
f
I
C
I
B2
I
B1
PA1428A
3
TYPICAL CHARACTERISTICS (T
a
= 25 C)
dT - Percentage of Rated Current - %
20
40
60
80
100
0
50
100
150
S/b Limited
Dissipation Limited
T
C
- Case Temperature - C
DERATING CURVE OF SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
0
10
30
20
25
50
75
100
125
150
T
C
- Case Temperature - C
4 Circuits
Operation
3 Circuits
Operation
2 Circuits
Operation
1 Circuit
Operation
100
10 m
1000
10000
100000
DC CURRENT GAIN vs. COLLECTOR CURRENT
I
C
- Collector Current - A
h
FE
- DC Current Gain
100 m
1
10
V
CE
= 2.0 V
Pulsed
75 C
25 C
25 C
T
a
= 125 C
0
0.1
5
10
1
2
3
4
25
50
75
100
125
150
SAFE OPERATING AREA
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Curreut - A
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
a
- Ambient Temperature - C
P
T
- Total Power Dissipation - W
T
C
= 25 C
Single Pulse
NEC
PA1428A
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
5
100
20
50
0.2
0.5
1
2
3
V
CEO
TYP.
Dissipation
Limited
S/b Limited
10 ms
1 ms
200 s
PW = 100 s
70
0.1
0.1
0.5
1
5
10
50
TRANSIENT THERMAL RESISTANCE
PW - Pulse Width - ms
R
th(j-c)
- Transient Thermal Resistance - C/W
1
10
100
V
CE
10 V
PA1428A
4
0.1
0.1
1
10
I
C
- Collector Current - A
V
CE(sat)
- Collector Saturation Voltage - V
1
10
I
C
/I
B
= 1000
Pulsed
I
C
/I
B
= 1000
Pulsed
0.1
0.1
1
10
SWITCHING TIME vs. COLLECTOR CURRENT
I
C
- Collector Current - A
1
V
F(E-C)
- Dumper Diode Voltage - V
1
10
10 m
0
100
10
1
100 m
DUMPER DIODE CHARACTERISTICS
I
F(E-C)
- Dumper Diode Forward Current - A
1.0
3.0
4.0
I
C
/I
B
= 500
COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
0.1
0.1
1
10
I
C
- Collector Current - A
V
BE(sat)
- Base Saturation Voltage - V
1
10
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
75 C
T
a
= 25 C
25 C
125 C
75 C
25 C
125 C
t
f
t
on
t
stg
t
on
, t
stg
, t
f
- Switching Time - s
T
a
= 25 C
PA1428A
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
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