SILICON TRANSISTOR ARRAY
DESCRIPTION
The
PA1478 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
FEATURES
Surge Absorber (Zener Diode) built in.
Easy mount by 0.1 inch of terminal interval.
High h
FE
for Darlington Transistor.
ORDERING INFORMATION
Part Number
Package
Quality Grade
PA1478H
10 Pin SIP
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
V
CBO
31
4
V
Collector to Emitter Voltage V
CEO
31
4
V
Emitter to Base Voltage
V
EBO
7
V
Surge Sustaining Energy
E
CEO (SUS)
40
mJ/unit
Collector Current (DC)
I
C(DC)
2
A/unit
Collector Current (pulse)
I
C(pulse)
*
4
A/unit
Total Power Dissipation
P
T1
**
3.5
W
Total Power Dissipation
P
T2
***
28
W
Junction Temperature
T
J
150
C
Storage Temperature
T
stg
55 to +150
C
* PW
300
s, Duty Cycle
10 %
** 4 Circuits, T
a
= 25 C
*** 4 Circuits, T
c
= 25 C
PA1478
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
PACKAGE DIMENSION
(in millimeters)
1 2 3 4 5 6 7 8 9 10
10
26.8 MAX.
1.4
0.6 0.1
2.54
2.5
4.0
10 MIN.
1.4
0.5 0.1
CONNECTION DIAGRAM
2
3
1
4
6
8
5
7
9
10
(C)
(E)
(B)
R
1
R
2
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
: Base (B)
: Collector (C)
: Emitter (E)
R
1
= 10 k
R
2
= 500
.
.
.
.
The information in this document is subject to change without notice.
1994
DATA SHEET
Document No. IC-3566
(O.D. No. IC-6634)
Date Published November 1994 P
Printed in Japan
PA1478
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Leakage Current
I
CBO
10
A
V
CB
= 20 V, I
E
= 0
Emitter Leakage Current
I
EBO
1
mA
V
EB
= 5 V, I
C
= 0
Collector to Emitter
V
CEO(SUS)
27
31
35
V
I
C
= 1 A,
Sustaining Voltage
L = 3 mH
DC Current Gain
h
FE1
*
1000
--
V
CE
= 2 V, I
C
= 0.5 A
DC Current Gain
h
FE2
*
2000
30000
--
V
CE
= 2 V, I
C
= 1 A
Collector Saturation Voltage
V
CE(sat)
*
1.5
V
I
C
= 1 A, I
B
= 1 mA
Base Saturation Voltage
V
BE(sat)
*
2
V
I
C
= 1 A, I
B
= 1 mA
Turn On Time
t
on
0.5
s
Storage Time
t
stg
3
s
Fall Time
t
f
1
s
* PW
350
s, Duty Cycle
2 % / pulsed
SWITCHING TIME TEST CIRCUIT
I
B2
V
IN
PW
PW = 50 s
Duty Cycle
2 %
.
.
V
BB
= 5 V
.
.
I
B1
I
C
T.U.T.
R
L
= 20
V
CC
= 20 V
.
.
.
.
Base Current
Wave Form
Collector
Current
Wave Form
I
B1
I
B2
I
C
10 %
90 %
t
on
t
stg
t
f
.
.
I
C
= 1 A
I
B1
= I
B2
= 1 mA
V
CC
= 20 V, R
L
= 20
See test circuit
.
.
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
PA1478
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING CURVE OF SAFE
OPERATING AREA
dT - Percentage of Rated Current - %
0
100
T
C
- Case Temperature - C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - W
0
4
T
a
- Ambient Temperature - C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
0
30
T
C
- Case Temperature - C
80
60
40
20
50
100
150
S/b Limited
Dissipation Limited
NEC
PA1478
3
2
1
25
50
75
100
125
150
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
20
10
25
50
75
100
125
150
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
SAFE OPERATING AREA
I
C
- Collector Current - A
1
10
V
CE
- Collector to Emitter Voltage - V
5
1
0.5
0.1
0.05
0.01
5
10
50
100
Single Pulse
Dissipation
Limited
S/b
Limited
50 ms
1 ms
100 s
V
CEO
TYP.
20
0.02
0.2
300 s
DC CURRENT GAIN vs. COLLECTOR CURRENT
h
FE
- DC Current Gain
0.01
50000
I
C
- Collector Current - A
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
V
CE (sat)
- Collector Saturation Voltage - V
V
BE (sat)
- Base Saturation Voltage - V
10
I
C
- Collector Current - A
10000
1000
100
0.1
2.0
10
V
CE
= 2.0 V
Pulsed
I
C
/I
B
= 1000
Pulsed
2.0
0.5
0.1
0.5
2.0
10
V
BE (sat)
V
CE (sat)
20000
5000
200
500
2000
5.0
0.02 0.05
1.0
0.2
0.5
5.0
1.0
0.2
0.2
1.0
5.0
2
PA1478
4
TRANSIENT THERMAL RESISTANCE
R
th (j-c)
- Transient Thermal Resistance - C/
W
0.1
100
PW - Pulse Width - ms
V
CE
10 V
10
1
0.1
1
10
100
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
I
C
- Collector Current - A
0
2.0
V
CE
- Collector to Emitter Voltage - V
1.0
2.0
3.0
4.0
5.0
1.6
1.2
0.8
0.4
100
I
R
= 80 A
120
140
160
180
200
220
PA1478
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
PA1478
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special:
Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
[MEMO]
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