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Электронный компонент: UPA1717

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confirm that this is the latest version.
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availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR






PA1717
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
G14047EJ1V0DS00 (1st edition)
Date Published
June 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The
PA1717 is P-Channel MOS Field Effect
Transistor designed for power management
applications of notebook computers.
FEATURES
Low on-state resistance
R
DS(on)1
= 33 m
MAX. (V
GS
=
-
10 V, I
D
=
-
3 A)
R
DS(on)2
= 59 m
MAX. (V
GS
=
-
4.5 V, I
D
=
-
3 A)
Low C
iss
: C
iss
= 830 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1717G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
-
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
#
25
V
Drain Current (DC)
I
D(DC)
#
6
A
Drain Current (pulse)
Note1
I
D(pulse)
#
24
A
Total Power Dissipation (T
A
= 25C)
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1 %
2. Mounted on ceramic substrate of 1200
mm
2
x 2.2
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 0.3
4.4
0.40
+0.10
0.05
0.78 MAX.
0.05 MIN.
1.8 MAX.
1.44
0.8
0.5 0.2
0.15
+0.10
0.05
5.37 MAX.
0.10
1
4
8
5
1,2,3
4
5,6,7,8
; Source
; Gate
; Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet G14047EJ1V0DS00
2






PA1717
ELECTRICAL CHARACTERISTICS (T
A
= 25 C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
-
10 V, I
D
=
-
3 A
26
33
m
R
DS(on)2
V
GS
=
-
4.5 V, I
D
=
-
3 A
44
59
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
=
-
10 V, I
D
=
-
1 mA
-
1.5
-
2.0
-
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
-
10 V, I
D
=
-
3 A
3.0
7.5
S
Drain Leakage Current
I
DSS
V
DS
=
-
30 V, V
GS
= 0 V
-
1
A
Gate to Source Leakage Current
I
GSS
V
GS
=
#
25 V, V
DS
= 0 V
#
10
A
Input Capacitance
C
iss
V
DS
=
-
10 V
830
pF
Output Capacitance
C
oss
V
GS
= 0 V
330
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
130
pF
Turn-on Delay Time
t
d(on)
I
D
=
-
3 A
15
ns
Rise Time
t
r
V
GS(on)
=
-
10 V
120
ns
Turn-off Delay Time
t
d(off)
V
DD
=
-
15 V
70
ns
Fall Time
t
f
R
G
= 6
50
ns
Total Gate Charge
Q
G
I
D
=
-
6 A
15
nC
Gate to Source Charge
Q
GS
V
DD
=
-
24 V
3
nC
Gate to Drain Charge
Q
GD
V
GS
=
-
10 V
5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 6 A, V
GS
= 0 V
0.82
V
Reverse Recovery Time
t
rr
I
F
= 6 A, V
GS
= 0 V
35
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A /
s
15
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
(
-
)
10 %
90 %
V
GS
(on)
10 %
0
I
D
(
-
)
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
Data Sheet G14047EJ1V0DS00
3






PA1717
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
2.8
2.4
2.0
1.6
1.2
0.8
0.4
Mounted on ceramic
substrate of
1200mm x 2.2mm
2
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
-
0.01
-
0.01
-
0.1
-
1
-
10
-
100
-
0.1
-
1
-
10
-
100
T
A
= 25 C
Single Pulse
Power Dissipation Limited
I
D(DC)
I
D(pulse)
R
DS(on)
Limited
(at V
GS
=
-
10 V)
1
ms
PW=
100 s
10
ms
100
ms
Remark Mounted on ceramic substrate of
1200 mm
2
x 2.2 mm
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
1
0.01
0.1
10
100
0.001
0.01
0.1
1
10
1000
100
0.0001
Mounted on ceramic
substrate
of
1200
mm
2
x
2.2 mm
R
th(ch-A)
= 62.5 C/W
Data Sheet G14047EJ1V0DS00
4






PA1717
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
- Drain Current - A
-
0.001
-
0.1
-
0.01
-
1
-
10
-
100
Pulsed
0
-
2
-
1
-
3
-
4
V
DS
=
-
10
V
-
25C
25C
75C
T
A
=
150C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
-
0.4
-
0.6
-
0.8
-
5
-
0.2
Pulsed
V
GS
=
-
10
V
-
25
-
30
-
20
-
10
-
15
-
4.5
V
-
1.0
-
1.2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
I
D
- Drain Current - A
-
1
100
10
1
0.1
-
10
-
100
-
0.1
V
DS
=
-
10 V
Pulsed
T
A
=
-
25C
25C
75C
150C
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
-
5
-
10
-
15
80
70
60
50
40
30
20
10
0
-
3
A
I
D
=
-
6
A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
100
80
60
40
10
100
0.1
0
1000
1
Pulsed
V
GS
=
-
4.5
V
-
10
V
20
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=
-
10
V
I
D
=
-
1
mA
-
50
0
150
50
100
-
3.0
-
2.5
-
2.0
-
1.5
-
1.0
-
0.5
0
Data Sheet G14047EJ1V0DS00
5






PA1717
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
-
50
80
60
40
20
0
0
50
100
150
Pulsed
-
10
V
I
D
=
-
3 A
V
GS
=
-
4.5
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
0.01
0.00
0.1
1
10
0.50
1.00
1.50
100
0 V
Pulsed
V
GS
=
-
4.5 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
-
0.01
100
10000
-
0.1
-
1
-
10
V
GS
=
0
V
f
=
1
MHz
-
100
1000
10
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
-
0.1
10
100
1000
-
1
-
10
-
100
t
d(off)
t
d(on)
t
r
t
f
V
GS(on)
=
-
10 V
V
DD
=
-
15 V
R
G
= 6
REVERSE RECOVERY TIME vs.
DIODE CURRENT
I
F
- Diode Current - A
t
rr
- Reverse Recovery Time - ns
-
0.1
-
1
-
10
-
100
1000
100
10
1
di/dt
=
100
A/
s
V
GS
=
0
V
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
5
10
15
20
-
10
-
20
-
30
-
40
-
2
-
4
-
6
-
8
0
I
D
=
-
6
A
-
10
-
12
V
DS
=
-
24 V
-
15 V
-
6 V
V
GS
V
DS