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Электронный компонент: UPA1850

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1997, 2000
MOS FIELD EFFECT TRANSISTOR






PA1850
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D11818EJ2V0DS00 (2nd edition)
Date Published
January 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
DESCRIPTION
The
PA1850 is a switching device which can be
driven directly by a 2.5
-
V power source.
The
PA1850 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
R
DS(on)1
= 115 m
MAX. (V
GS
= 4.5 V, I
D
= 1.5 A)
R
DS(on)2
= 130 m
MAX. (V
GS
= 4.0 V, I
D
= 1.5 A)
R
DS(on)3
= 200 m
MAX. (V
GS
= 2.5 V, I
D
= 1.5 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1850GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage
V
DSS
12
V
Gate to Source Voltage
V
GSS
10/+5
V
Drain Current (DC)
I
D(DC)
#
2.5
A
Drain Current (pulse)
Note1
I
D(pulse)
#
1
0
A
Total Power Dissipation
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1 %
2. Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1
4
8
5
6.4 0.2
4.4 0.1
1.0 0.2
0.145

0.055
0.1
0.8 MAX.
3.15 0.15
3.0 0.1
0.65
0.10 M
0.27
+0.03
0.08
0.25
0.5
3
+5
3
0.6
+0.15
0.1
1.2 MAX.
0.10.05
1.00.05
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
EQUIVALENT CIRCUIT
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Data Sheet D11818EJ2V0DS00
2






PA1850
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 12 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
#
10 V, V
DS
= 0 V
#
10
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
0.5
1.0
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 1.5 A
2.0
5.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5 V, I
D
= 1.5 A
80
115
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 1.5 A
85
130
m
R
DS(on)3
V
GS
= 2.5 V, I
D
= 1.5 A
127
200
m
Input Capacitance
C
iss
V
DS
= 10 V
260
pF
Output Capacitance
C
oss
V
GS
= 0 V
300
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
45
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V
120
ns
Rise Time
t
r
I
D
= 1.5 A
420
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= 4.0 V
520
ns
Fall Time
t
f
R
G
= 10
430
ns
Total Gate Charge
Q
G
V
DD
= 10 V
12
nC
Gate to Source Charge
Q
GS
I
D
= 2.5 A
2
nC
Gate to Drain Charge
Q
GD
V
GS
= 4.0 V
5
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 2.5 A, V
GS
= 0 V
0.80
V
Reverse Recovery Time
t
rr
I
F
= 2.5 A, V
GS
= 0 V
750
ns
Reverse Recovery Charge
Q
rr
di/dt = 10 A
/
s
950
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
(
-
)
10 %
90 %
V
GS
(on)
10 %
0
I
D
(
-
)
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
5
5
5
5
Data Sheet D11818EJ2V0DS00
3






PA1850
TYPICAL CHARACTERISTICS (T
A
= 25C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Der
ating F
actor - %
T
A
- Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
-
10.0
-
100.0
I
D
- Drain Current - A
-
1.0
V
DS
- Drain to Source Voltage - V
-
100
-
10
-
1
-
0.1
-
0.1
-
0.01
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1mm
P
D
(FET1) : P
D
(FET2) = 1:1
2
I
D
(pulse)
I
D
(
DC
)
R
DS(on)
Limited
(@V
GS
=
-
4.0
V)
100 m
s
10
ms
PW
= 1
ms
DC
0
-
1
-
2
-
3
-
10
-
1
-
0.1
-
0.01
-
0.001
T
A
= 125 C
V
GS
- Gate to Source Voltage - V
V
DS
=
-
10 V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
75 C
25 C
-
25
C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=
-
10 V
I
D
=
-
1 mA
-
50
50
100
0
150
-
1.5
-
1
-
0.5
0
-
1
-
10
-
100
-
0.1
V
DS
=
-
10 V
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
100
10
1
0.1
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
T
A
=
-
25 C
25 C
75 C
125 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
50
100
150
200
250
V
GS
=
-
2.5 V
-
1
-
10
-
100
-
0.1
T
A
= 125C
75C
25C
-
25C
5
Data Sheet D11818EJ2V0DS00
4






PA1850
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
0
50
100
150
200
V
GS
=
-
4.0 V
-
1
-
10
-
100
-
0.1
T
A
= 125C
75C
25C
-
25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
120
100
80
60
40
20
V
GS
=
-
10 V
-
1
-
10
-
100
-
0.1
T
A
= 125 C
75 C
25 C
-
25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -C
I
D
=
-
1.5 A
-
50
0
50
100
150
200
160
120
80
40
0
R
DS (on)
- Drain to Source On-state Resistance - m
-
10 V
-
4.0 V
V
GS
=
-
2.5 V
0
0
200
100
300
400
500
-
2
-
4
-
6
-
8
-
10
R
DS (on)
- Drain to Source On-state Resistance - m
V
GS
- Gate to Source Voltage - V
I
D
=
-
1.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
1000
100
10
-
1
-
10
-
100
f = 1 MHz
C
oss
C
iss
C
rss
I
D
- Drain Current - A
td
(on)
, tr, td
(off)
, tf - Swwitchig Time - ns
SWITCHING CHARACTERISTICS
V
DD
=
-
10 V
V
GS
(
on
) =
-
4.0 V
R
G
= 10
1000
100
10
-0.
1
-
1
-
10
tf
tr
td
(off)
td
(on)
Data Sheet D11818EJ2V0DS00
5






PA1850
0.4
0.8
1.2
1.6
10
1
0.1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Source to Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
V
GS
= 0 V
Q
G
- Gate Charge - nC
0
3
9
6
12
DYNAMIC INPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
-
5
-
4
-
3
-
2
-
1
0
I
D
=
-
2.5 A
15
V
DD
=
-
10 V
V
DD
=
-
4 V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - S
r
th(t)
- Transient Thermal Resistance - C/
W
10
0.1
1
100
1000
1
1m
10m
100m
10
100
1000
Mounted on Ceramic Substrate
of 5000 mm x 1.1 mm
Single Pulse
P
D
(FET1) : P
D
(FET2) = 1:1
2
62.5C/W