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Электронный компонент: UPA1910TE

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confirm that this is the latest version.
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availability and additional information.
1998, 1999
MOS FIELD EFFECT TRANSISTOR






PA1910
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D13105EJ2V0DS00 (2nd edition)
Date Published
November 1999 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
DESCRIPTION
The
PA1910 is a switching device which can be driven
directly by a 2.5-V power source.
The
PA1910 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
R
DS(on)1
= 80 m
MAX. (V
GS
= 4.5
V, I
D
= 1.5
A)
R
DS(on)2
= 90 m
MAX. (V
GS
= 4.0
V, I
D
= 1.5
A)
R
DS(on)3
= 100 m
MAX. (V
GS
= 3.0
V, I
D
= 1.0 A)
R
DS(on)4
= 130 m
MAX. (V
GS
= 2.5
V, I
D
= 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1910TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage
V
DSS
12
V
Gate to Source Voltage
V
GSS
10/+5
V
Drain Current (DC)
I
D(DC)
2.5
A
Drain Current (pulse)
Note1
I
D(pulse)
10
A
Total Power Dissipation
P
T1
0.2
W
Total Power Dissipation
Note2
P
T2
2
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1 %
2. Mounted on FR-4 board, t
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
0.06
2.8 0.2
1.5
0.95
1
2
3
6
5
4
1.9
2.9 0.2
0.32
+0.1
0.05
0.95
0.65
+0.1 0.15
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: TB
Gate
Drain
Data Sheet D13105EJ2V0DS00
2






PA1910
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 12
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
= 10
V, V
DS
= 0
V
10
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
0.4
0.72
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 1.5
A
1
5.1
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5
V, I
D
= 1.5
A
60
80
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 1.5
A
63
90
m
R
DS(on)3
V
GS
= 3.0
V, I
D
= 1.0
A
75
100
m
R
DS(on)4
V
GS
= 2.5
V, I
D
= 1.0
A
86
130
m
Input Capacitance
C
iss
V
DS
= 10
V
386
pF
Output Capacitance
C
oss
V
GS
= 0
V
283
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
154
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10
V
131
ns
Rise Time
t
r
I
D
= 1.5
A
603
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= 4.0
V
427
ns
Fall Time
t
f
R
G
= 10
1470
ns
Total Gate Charge
Q
G
V
DD
= 10
V
6.7
nC
Gate to Source Charge
Q
GS
I
D
= 3.0
A
1.6
nC
Gate to Drain Charge
Q
GD
V
GS
= 4.0
V
2.9
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 2.5
A, V
GS
= 0
V
0.74
V
Reverse Recovery Time
t
rr
I
F
= 2.5
A, V
GS
= 0
V
30.0
ns
Reverse Recovery Charge
Q
rr
di/dt = 10
A
/
s
2.2
nC
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE

Data Sheet D13105EJ2V0DS00
3






PA1910
TYPICAL CHARCTERISTICS (T
A
= 25



C)
30
60
90
120
150
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
dT - Der
ating F
actor - %
T
A
- Ambient Temperature - C
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
-
100
-
10
-
1
-
0.1
-
00.1
-
0.1
-
1
-
10
-
100
FORWARD BIAS SAFE OPERATING AREA
Single Pulse
Mounted on 250 mm x 35 m copper
pad connected to drain electrode in
50 mm x 50 mm x 1.6 mm FR-4 board.
2
R
DS
(on)
Limited
(V
GS
=
-
4.5
V)
I
D(pulse)
I
D(DC)
100
ms
5 s
10
ms
P
W
= 1
ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
-
0.2
-
0.4
-
0.6
-
0.8
-
1
-
10
-
8
-
6
-
4
-
2
0
V
GS
=
-
4.5 V
-
4.0 V
-
2.5 V
-
3.0 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
-
10
-
1
-
0.1
-
0.01
-
0.001
-
0.0001
-
0.00001
0
-
1.0
-
2.0
-
3.0
V
DS
=
-
10 V
T
A
= 125C
75C
25C
-
25C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=
-
10 V
I
D
=
-
1 mA
-
50
0
50
100
150
0
-
0.5
-
1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|

y
fs

| - Forward Transfer Admittance - S
V
DS
=
-
10 V
-
0.01
-
0.1
-
1
-
10
-
100
100
10
1
0.1
0.01
T
A
=
-
25C
25C
75C
125C
Data Sheet D13105EJ2V0DS00
4






PA1910
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
-
0.01
-
0.1
-
1
-
10
-
100
90
70
50
30
V
GS
=
-
4.5 V
T
A
=125
C
75
C
25
C
-
25
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
-
0.01
-
0.1
-
1
-
10
100
90
70
50
30
V
GS
=
-
4.0 V
T
A
=125
C
75
C
25
C
-
25
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
-
0.01
-
0.1
-
1
-
10
-
100
120
100
80
60
V
GS
=
-
3.0 V
T
A
=125
C
75
C
25
C
-
25
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
-
0.01
-
0.1
-
1
-
10
-
100
180
160
140
120
100
80
60
V
GS
=
-
2.5 V
T
A
=125
C
75
C
25
C
-
25
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
R
DS(on)
- Drain to Source On-state Resistance - m
I
D
=
-
1.5 A
-
50
0
50
100
150
100
80
60
40
V
GS
=
-
4.0 V
-
4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
R
DS(on)
- Drain to Source On-state Resistance - m
I
D
=
-
1.0 A
-
50
0
50
100
150
120
100
80
60
V
GS
=
-
2.5 V
-
3.0 V
Data Sheet D13105EJ2V0DS00
5






PA1910
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
-
5
-
10
-
15
-
20
150
100
50
0
I
D
=
-
1.5 A
-
0.1
-
1.0
1000
100
-
10
-
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
DS
- Drain to Source Voltage - V
C
oss
C
iss
C
rss
f = 1 MHz
V
GS
= 0
V
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
-
0.1
-
1
-
10
100
1000
10000
V
DD
=
-
10 V
V
GS(on)
=
-
4.0 V
R
G
= 10
t
d(on)
t
d(off)
t
f
t
r
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
F(S-D)
- Source to Drain Voltage - V
I
F(S-D)
- Diode Forward Current - A
0.4
0.2
0.6
0.8
1.0
1.2
100
10
1
0.1
0.01
0.001
0.0001
V
GS
= 0 V
DYNAMIC INPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
1
2
3
4
5
6
7
-
6
-
5
-
4
-
3
-
2
-
1
0
I
D
=
-
3.0 A
V
DD
=
-
10 V
-
6 V