ChipFind - документация

Электронный компонент: UPA1919TE

Скачать:  PDF   ZIP

Document Outline

MOS FIELD EFFECT TRANSISTOR






PA1919
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16298EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The
PA1919 is a switching device, which can be driven
directly by a 2.5 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 58 m
MAX. (V
GS
=
-
4.5 V, I
D
=
-
3.0 A)
R
DS(on)2
= 60 m
MAX. (V
GS
=
-
4.0 V, I
D
=
-
3.0 A)
R
DS(on)3
= 84 m
MAX. (V
GS
=
-
2.5 V, I
D
=
-
3.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1919TE
SC-95 (Mini Mold Thin Type)
Marking: TX
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
-
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
12
V
Drain Current (DC) (T
A
= 25C)
I
D(DC)
m
6.0
A
Drain Current (pulse)
Note1
I
D(pulse)
m
24
A
Total Power Dissipation
P
T1
0.2
W
Total Power Dissipation
Note2
P
T2
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on FR-4 board of 2500 mm
2
x 1.6 mm, t
5
sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
0.06
2.8 0.2
1.5
0.95
1
2
3
6
5
4
1.9
2.9 0.2
0.32
+0.1
0.05
0.95
0.65
+0.1 0.15
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet G16298EJ1V0DS
2






PA1919
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
-
20 V, V
GS
= 0 V
-
1.0
A
Gate Leakage Current
I
GSS
V
GS
=
m
12 V, V
DS
= 0 V
m
10
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
=
-
10 V, I
D
=
-
1.0
mA
-
0.5
-
1.0
-
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
-
10 V, I
D
=
-
3.0 A
5.0
9.5
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
-
4.5 V, I
D
=
-
3.0 A
46
58
m
R
DS(on)2
V
GS
=
-
4.0 V, I
D
=
-
3.0 A
48
60
m
R
DS(on)3
V
GS
=
-
2.5 V, I
D
=
-
3.0 A
63
84
m
Input Capacitance
C
iss
V
DS
=
-
10 V
680
pF
Output Capacitance
C
oss
V
GS
= 0 V
170
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
95
pF
Turn-on Delay Time
t
d(on)
V
DD
=
-
10 V, I
D
=
-
3.0 A
15
ns
Rise Time
t
r
V
GS
=
-
4.0 V
19
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
47
ns
Fall Time
t
f
65
ns
Total Gate Charge
Q
G
V
DD
=
-
16 V
6.0
nC
Gate to Source Charge
Q
GS
V
GS
=
-
4.0 V
1.5
nC
Gate to Drain Charge
Q
GD
I
D
=
-
6.0 A
2.4
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 6.0 A, V
GS
= 0 V
0.93
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS(
-
)
V
DS(
-
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet G16298EJ1V0DS
3






PA1919
YPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
T
- T
o
t
a
l
P
o
w
e
r Di
s
s
i
p
at
i
on - W
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
175
Single pulse
Mounted on FR
-
4 board of
2500 mm
2
x 1.6 mm, t
5 sec.
T
A
- Ambient Temperature -
C
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
- 0.01
- 0.1
- 1
- 10
- 100
- 0.1
- 1
- 10
- 100
100 m s
10 m s
I
D (pulse)
P W = 1 m s
R
D S (on)
Lim ited (V
G S
=
-
4.5 V )
5 s
S in gle pulse
M ounted on F R
-
4 board of
2500 m m
2
x 1.6 m m
I
D (D C )
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
c
h
-
A
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
1
10
100
1000
Mounted on FR
-
4 board of
2500 mm
2
x 1.6 mm
Without board
Single pulse
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet G16298EJ1V0DS
4






PA1919
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
0
- 4
- 8
- 12
- 16
- 20
- 24
0
- 0.5
- 1
- 1.5
- 2
Pulsed
-
2.5 V
V
G S
=
-
4.5 V
-
4.0 V
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
- A
- 0 .0 0 0 1
- 0 .0 0 1
- 0 .0 1
- 0 .1
- 1
- 1 0
- 1 0 0
0
- 0 .5
- 1
- 1 .5
- 2
- 2 .5
- 3
V
D S
=
-
1 0 V
P u ls e d
T
A
= 1 2 5 C
7 5 C
2 5 C
-
2 5 C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
- Gat
e
Cut
-
of
f
V
o
l
t
age - V
- 0.4
- 0.6
- 0.8
- 1
- 1.2
- 1.4
-50
0
50
100
150
V
DS
=
-
10 V
I
D
=
-
1.0 m A
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.1
1
10
100
- 0.01
- 0.1
- 1
- 10
- 100
T
A
= 125C
75C
25C
-
25C
V
DS
=
-
10 V
Pulsed
T
ch
- Channel Temperature -
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
40
80
120
160
-50
0
50
100
150
V
GS
=
-
2.5 V
I
D
=
-
3.0 A
Pulsed
V
GS
=
-
4.0 V
V
GS
=
-
4.5 V
0
40
80
120
160
0
- 2
- 4
- 6
- 8
- 10
- 12
I
D
=
-
3.0 A
Pulsed
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
T
ch
- Channel Temperature -
C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
V
GS
- Gate to Source Voltage - V
Data Sheet G16298EJ1V0DS
5






PA1919
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0
40
80
120
160
- 0.01
- 0.1
- 1
- 10
- 100
V
GS
=
-
4.5 V
Pulsed
T
A
= 125C
-
25C
25C
75C
0
40
80
120
160
- 0.01
- 0.1
- 1
- 10
- 100
V
G S
=
-
4.0 V
P ulsed
T
A
= 125C
75C
25C
-
25C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
0
40
80
12 0
16 0
- 0.01
- 0.1
- 1
- 10
- 10 0
V
G S
=
-
2.5 V
P u lsed
T
A
= 125 C
75
25 C
-
25 C
I
D
- Drain Current - A
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
10
100
1000
10000
- 0.1
- 1
- 10
- 100
V
G S
= 0 V
f = 1.0 M H z
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
1
10
100
1000
- 0.1
- 1
- 10
V
DD
=
-
10 V
V
GS
=
-
4.0 V
R
G
= 10 W
t
d(off)
t
d(on)
t
f
t
r
I
F
- Di
ode Forw
ard Current
- A
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
GS
= 0 V
Pulsed
I
D
- Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V