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Электронный компонент: UPA2719GR

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MOS FIELD EFFECT TRANSISTOR
PA2719GR
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. G16953EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004

DESCRIPTION
The
PA2719GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
Low on-state resistance
R
DS(on)1
= 13 m
MAX. (V
GS
=
-10 V, I
D
=
-5.0 A)
R
DS(on)2
= 20.9 m
MAX. (V
GS
=
-4.5 V, I
D
=
-5.0 A)
Low C
iss
: C
iss
= 2010 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA2719GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m20 V
Drain Current (DC)
I
D(DC)
m10 A
Drain Current (pulse)
Note1
I
D(pulse)
m100 A
Total Power Dissipation
Note2
P
T1
2 W
Total Power Dissipation
Note3
P
T2
2 W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to + 150
C
Single Avalanche Current
Note4
I
AS
-10 A
Single Avalanche Energy
Note4
E
AS
10
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
4.
Starting T
ch
= 25C, V
DD
= 15 V, R
G
= 25
, L = 100
H, V
GS
= 20
0 V

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 0.3
4.4
0.40
+0.10
0.05
0.78 MAX.
0.05 MIN.
1.8 MAX.
1.44
0.8
0.5 0.2
0.15
+0.10
0.05
5.37 MAX.
0.10
1
4
8
5
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet G16953EJ1V0DS
2
PA2719GR
ELECTRICAL CHARACTERISTICS (T
A
= 25C, All terminals are connected.)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
-
30 V, V
GS
= 0 V
1
A
Gate Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0 V
m
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
=
-
10 V, I
D
=
-
1 mA
1.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
=
-
10 V, I
D
=
-
5.0 A
8 S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
=
-
10 V, I
D
=
-
5.0 A
10.6 13 m
R
DS(on)2
V
GS
=
-
4.5 V, I
D
=
-
5.0 A
14.2 20.9 m
R
DS(on)3
V
GS
=
-
4.0 V, I
D
=
-
5.0 A
16.6 25.5 m
Input Capacitance
C
iss
V
DS
=
-
10 V
2010 pF
Output Capacitance
C
oss
V
GS
= 0 V
460
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
350
pF
Turn-on Delay Time
t
d(on)
V
DD
=
-
15 V, I
D
=
-
5.0 A
12 ns
Rise Time
t
r
V
GS
=
-
10 V
15
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
290
ns
Fall Time
t
f
180
ns
Total Gate Charge
Q
G
V
DD
=
-
24 V
43
nC
Gate to Source Charge
Q
GS
V
GS
=
-
10 V
5.5
nC
Gate to Drain Charge
Q
GD
I
D
=
-
10 A
12
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 10 A, V
GS
= 0 V
0.84
V
Reverse Recovery Time
t
rr
I
F
= 10 A, V
GS
= 0 V
105
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
6.7
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
L
V
DD
V
GS
=
-
20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
-
)
10%
90%
V
GS
10%
0
V
DS
(
-
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
V
DS
0
t
on
t
off
PG.
PG.
50
D.U.T.
R
L
V
DD
I
G
=
-
2 mA
-
Data Sheet G16953EJ1V0DS
3
PA2719GR
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Pe
rcentage
of Rated Powe
r -
%
0
20
40
60
80
100
120
0
25
50
75
100
125 150
175
T
A
- Ambient Temperature -
C
P
T
- Total Powe
r
Dissipation - W
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
25
50
75
100
125
150
175
Mounted on ceramic
substrate of
1200 mm
2
x 2.2 mm
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Dr
ain Cur
r
ent
- A
-0.01
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
I
D(pulse)
10 ms
Power Dissipation Limited
I
D(DC)
PW = 100
s
1 ms
DC
R
DS(on)
Limited
(at V
GS
=
-10 V)
100 ms
T
A
= 25C
Single pulse
Mounted on ceramic substrate of
1200 mm
2
x 2.2 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(c
h-A)
-
Transient
Thermal Resista
n
ce -

C/W
0.1
1
10
100
1000
Single pulse, T
A
= 25C
R
th(ch-A)1
: Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
R
th(ch-A)2
: Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
R
th(ch-A)2
R
th(ch-A)1
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet G16953EJ1V0DS
4
PA2719GR

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Dr
ain Cur
r
ent
- A
0
-25
-50
-75
-100
-125
0
-0.5
-1
-1.5
-2
Pulsed
V
GS
=
-10 V
-4 V
-4.5 V
V
DS
- Drain to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
- A
-0.01
-0.1
-1
-10
-100
0
-1
-2
-3
-4
-5
V
DS
=
-10 V
Pulsed
T
A
= 150C
75C
25C
-40C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0
-0.5
-1
-1.5
-2
-2.5
-50
0
50
100
150
V
DS
=
-10 V
I
D
=
-1 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward
T
r
ansfer Admittan
c
e - S
0.01
0.1
1
10
100
-0.01
-0.1
-1
-10
-100
V
DS
=
-10 V
Pulsed
T
A
= 150C
75C
25C
-40C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)

- Drain to S
ource On
-state Re
sistance - m
0
10
20
30
40
-1
-10
-100
-1000
Pulsed
V
GS
=
-10 V
-4.5 V
-4 V
I
D
- Drain Current - A
R
DS(
on)

- Drain to S
ource On
-state Re
sistance - m
0
10
20
30
40
0
-5
-10
-15
-20
I
D
=
-5 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet G16953EJ1V0DS
5
PA2719GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)

- Drain to S
ource On
-state Re
sistance - m
0
10
20
30
-50
0
50
100
150
I
D
=
-5 A
Pulsed
V
GS
=
-10 V
-4.5 V
-4 V
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
10
100
1000
10000
-0.1
-1
-10
-100
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
C
oss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Swi
t
ching Time - ns
1
10
100
1000
10000
-0.1
-1
-10
-100
V
DD
=
-15 V
V
GS
=
-10 V
R
G
= 10
t
d(off)
t
f
t
r
t
d(on)
I
D
- Drain Current - A
V
DS
- D
r
ain to So
urce Voltage - V
0
-10
-20
-30
0
20
40
60
0
-5
-10
-15
I
D
=
-10 A
V
DD
=
-24 V
-15 V
-6 V
V
DS
V
GS
Q
G
- Gate Charge - nC
V
GS
-
Gate to So
urce Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Fo
rwa
r
d
Curren
t
- A
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Pulsed
V
GS
=
-10 V
0 V
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
10
100
1000
0.1
1
10
100
V
GS
= 0 V
di/dt = 50 A/
s
I
F
- Diode Forward Current - A