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MOS FIELD EFFECT TRANSISTOR
PA2756GR
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
The
PA2756GR is Dual N-channel MOS Field Effect
Transistor designed for switching applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 105 m
MAX. (V
GS
= 10
V, I
D
= 2.0
A)
R
DS(on)2
= 150 m
MAX. (V
GS
= 4.0
V, I
D
= 2.0 A)
Low C
iss
: C
iss
= 260 pF TYP.
Built-in G-S protection diode against ESD
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA2756GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20 V
Drain Current (DC)
Note1
I
D(DC)
4.0 A
Drain Current (pulse)
Note2
I
D(pulse)
16 A
Total Power Dissipation (1 unit)
Note1
P
T1
1.6 W
Total Power Dissipation (2 units)
Note1
P
T2
2.0 W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-55 to +150
C
Single Avalanche Current
Note3
I
AS
4.0 A
Single Avalanche Energy
Note3
E
AS
1.6
mJ
Repetitive Avalanche Energy
Note4
E
AR
1.6
mJ
Notes 1. Mounted on ceramic substrate of 2000 mm
2
x 2.2 mm
2. PW
10
s, Duty Cycle
1%
3. Starting T
ch
= 25C, V
DD
= 30 V, R
G
= 25
, V
GS
= 20
0 V
4. I
AR
4.0 A, T
ch
150C
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 0.3
4.4
0.40
+0.10
0.05
0.78 MAX.
0.05 MIN.
1.8 MAX.
1.44
0.8
0.5 0.2
0.15
+0.10
0.05
5.37 MAX.
0.10
1
4
8
5
1
: Source 1
2
: Gate 1
7, 8: Drain 1
3
: Source 2
4
: Gate 2
5, 6: Drain 2
EQUIVALENT CIRCUIT
Source 1
Body
Diode
Gate
Protection
Diode
Gate 1
Drain 1
Source 2
Body
Diode
Gate
Protection
Diode
Gate 2
Drain 2
Data Sheet G17407EJ1V0DS
2
PA2756GR
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
18 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 2.0 A
2.0
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 2.0 A
85
105
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 2.0 A
106
150
m
Input Capacitance
C
iss
V
DS
= 10 V
260
pF
Output Capacitance
C
oss
V
GS
= 0 V
65
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
20
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30 V, I
D
= 2.0 A
14
ns
Rise Time
t
r
V
GS
= 10 V
5
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
80 ns
Fall Time
t
f
30 ns
Total Gate Charge
Q
G
V
DD
= 48 V
6
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
1
nC
Gate to Drain Charge
Q
GD
I
D
= 4.0 A
1.5
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 4.0 A, V
GS
= 0 V
0.9
V
Reverse Recovery Time
t
rr
I
F
= 4.0 A, V
GS
= 0 V
24
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
22 nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet G17407EJ1V0DS
3
PA2756GR
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Pe
rcentage
of Rated Powe
r -
%
0
20
40
60
80
100
120
0
20
40
60
80 100 120 140 160
T
A
- Ambient Temperature -
C
P
T
- Total Powe
r
Dissipation - W
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
20
40
60
80 100 120 140 160
2 units
1 unit
Mounted on ceramic
substrate of
2000 mm
2
x 2.2 mm
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Dr
ain Cur
r
ent
- A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Single pulse, 1unit
T
A
= 25C
Mounted on ceramic substrate
of 2000 mm
2
x 2.2 mm
I
D(DC)
I
D(pulse)
R
DS(on)
Limited
(at V
GS
= 10 V)
1 ms
100 ms
10 ms
Power Dissipation Limited
PW = 100
s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
-
Transient T
hermal Resistance -
C/W
0.1
1
10
100
1000
Single pulse, 1unit
T
A
= 25C
Mounted on ceramic substrate of 2000 mm
2
x 2.2 mm
R
th(ch-A)
= 78.1C/W
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet G17407EJ1V0DS
4
PA2756GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Dr
ain Cur
r
ent
- A
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Pulsed
V
GS
= 10 V
4.0 V
V
DS
- Drain to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
- A
0.0001
0.001
0.01
0.1
1
10
100
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
A
=
-40C
25C
75C
125C
150C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0
0.5
1
1.5
2
2.5
3
-50 -25
0
25 50 75 100 125 150 175
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward
T
r
ansfer Admittan
c
e - S
0.01
0.1
1
10
0.01
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
A
=
-40C
25C
75C
125C
150C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
60
80
100
120
140
160
180
200
0.1
1
10
100
Pulsed
V
GS
= 4.0 V
10 V
I
D
- Drain Current A
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
60
80
100
120
140
160
180
200
0 1 2 3 4 5 6 7 8 9 10 11 12
Pulsed
I
D
= 4.0 A
2.0 A
0.8 A
V
GS
- Gate to Source Voltage - V
Data Sheet G17407EJ1V0DS
5
PA2756GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
20
40
60
80
100
120
140
160
180
200
-50 -25
0
25 50 75 100 125 150 175
I
D
= 2.0 A
Pulsed
V
GS
= 4.0 V
10 V
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
1
10
100
1000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Swi
t
ching Time - ns
1
10
100
1000
0.1
1
10
100
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
r
t
d(on)
t
f
I
D
- Drain Current - A
V
DS
- D
r
ain to So
urce Voltage - V
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
I
D
= 4.0 A
V
GS
V
DS
V
DD
= 48 V
30 V
12 V
Q
G
- Gate Charge - nC
V
GS
-
Gate to So
urce Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Fo
rwa
r
d
Curren
t
- A
0.01
0.1
1
10
100
0
0.5
1
1.5
Pulsed
V
GS
= 10 V
4.0 V
0 V
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
V
GS
= 0 V
di/dt = 100 A/
s
I
F
- Diode Forward Current - A
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