Document Outline
- COVER
- FEATURES
- PACKAGE DIMENSIONS
- EQUIVALENT CIRCUIT
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA573T
P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
FOR SWITCHING
Document No. G11245EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in millimeters)
0.2
+0.1
0
1.25 0.1
2.1 0.1
0.65
0.65
1.3
2.0 0.2
0.15
+0.1
0.05
0.7
0.9 0.1
0 to 0.1
EQUIVALENT CIRCUIT
5
4
1
2
3
1. G
2.
3.
4.
5.
Marking: CB
PIN CONNECTION
Gate 1
Source
Gate 2
Drain 2
Drain 1
(G1)
(common)
(G2)
(D2)
(D1)
The
PA573T is a super-mini-mold device provided with
two MOS FET circuits. It achieves high-density mounting
and saves mounting costs.
FEATURES
Two source common MOS FET circuits in package the
same size as SC-70
Directly driven by ICs having a 3 V power supply
Automatic mounting supported
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATINGS
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
30
V
Gate to Source Voltage
V
GSS
V
DS
= 0
+7
V
Drain Current (DC)
I
D(DC)
+100
mA
Drain Current (pulse)
I
D(pulse)
PW
10 ms, Duty Cycle
50 %
+200
mA
Total Power Dissipation
P
T
200 (Total)
mW
Channel Temperature
T
ch
150
C
Operating Temperature
T
opt
55 to +80
C
Storage Temperature
T
stg
55 to +150
C
PA573T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 30 V, V
GS
= 0
1.0
A
Gate Leakage Current
I
GSS
V
GS
= +5 V, V
DS
= 0
+3.0
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 3 V, I
D
= 10
A
1.6
1.9
2.3
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 3 V, I
D
= 10 mA
20
30
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 2.5 V, I
D
= 1 mA
55
100
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 4.0 V, I
D
= 10 mA
20
25
Input Capacitance
C
iss
V
DS
= 5.0 V, V
GS
= 0, f = 1 MHz
16
pF
Output Capacitance
C
oss
13
pF
Reverse Transfer Capacitance
C
rss
2
pF
Turn-On Delay Time
t
d(on)
V
DD
= 5 V, I
D
= 10 mA, V
GS(on)
= 5 V,
10
ns
Rise Time
t
r
R
G
= 10
, R
L
= 500
40
ns
Turn-Off Delay Time
t
d(off)
130
ns
Fall Time
t
f
80
ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
PG.
R
G
DUT
R
L
V
DD
= 1 s
Duty Cycle
1 %
0
V
GS
Gate
voltage
waveform
Drain
current
waveform
V
GS
I
D
0
10 %
V
GS(on)
I
D
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
90 %
90 %
PA573T
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor - %
0
100
80
60
40
20
T
C
- Case Temperature - C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mW
0
250
200
150
100
50
T
A
- Ambient Temperature - C
TRANSFER CHARACTERISTICS
I
D
- Drain Current - mA
1.0
100
10
1
0.1
0.01
0.001
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
50
2.6
2.2
1.8
1.4
1.0
T
ch
- Channel Temperature - C
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - mS
0.5
200
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-State Resistance -
2
30
20
10
V
GS
- Gate to Source Voltage - V
V
DS
= 3 V
Pulsed
measurement
20
40
60
80
100
120
140
160
30
60
90
120
150
180
Total power
dissipation
Total
1.5
2.0
2.5
3.0
3.5
4.0
T
A
= 150 C
75 C
25 C
25 C
0
50
100
150
V
DS
= 3 V
I
D
= 10 A
V
DS
= 3 V
Pulsed
measurement
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
10 mA
T
A
= 25 C
25 C
75 C
150 C
3
4
5
6
7
8
I
D
= 100 mA
Pulsed
measurement
PA573T
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
0.3
100
80
60
40
20
0
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
1
100
80
60
40
20
0
I
D
- Drain Current - mA
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.3
40
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
300
I
D
- Drain Current - mA
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Source to Drain Current - mA
0.4
200
V
SD
- Source to Drain Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - mA
0
100
80
60
40
20
V
DS
- Drain to Source Voltage - V
V
GS
= 2.5 V
Pulsed
measurement
0.5
1
2
5
10
T
A
= 25 C
25 C
75 C
150 C
2
5
10
20
60
V
GS
= 4 V
Pulsed
measurement
T
A
= 150 C
25 C
25 C
75 C
0.5
1
2
5
10
20
1
3
10
30
C
iss
C
oss
C
rss
V
DS
= 5 V
f = 1 MHz
100
50
10
t
r
t
f
t
d(on)
t
d(off)
20
50
100
300
V
DD
= 5 V
V
GS
= 5 V
R
in
= 10
100
30
10
3
1
0.3
0.1
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
GS
= 0 V
Pulsed
measurement
1
2
3
4
5
4.5 V
4.0 V
3.5 V
3.0 V
V
GS
= 2.5 V
PA573T
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
PA573T
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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