Document Outline
- COVER
- FEATURES
- PACKAGE DIMENSIONS
- PIN CONNECTION (Top view)
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA603T
The
PA603T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
FEATURES
Two MOS FET circuits in package the same size as
SC-59
Complement to
PA602T
Automatic mounting supported
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
50
V
Gate to Source Voltage
V
GSS
+16
V
Drain Current (DC)
I
D(DC)
100
mA
Drain Current (pulse)
I
D(pulse)
*
200
mA
Total Power Dissipation
P
T
300 (Total)
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
* PW
10 ms, Dury Cycle
50 %
Document No. G11250EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in millimeters)
0.32
+0.1
0.05
1.5
2.8 0.2
0.95
0.95
1.9
2.9 0.2
0.16
+0.1
0.06
0.8
1.1 to 1.4
0 to 0.1
0.65
+0.1
0.5
PIN CONNECTION (Top view)
P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
PA603T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 50 V, V
GS
= 0
1.0
A
Gate Leakage Current
I
GSS
V
GS
= +16 V, V
DS
= 0
+1.0
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 5.0 V, I
D
= 1.0
A
1.5
1.9
2.5
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 5.0 V, I
D
= 10 mA
15
mS
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 4.0 V, I
D
= 10 mA
60
100
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 10 mA
40
60
Input Capacitance
C
iss
V
DS
= 5.0 V, V
GS
= 0, f = 1.0 MHz
17
pF
Output Capacitance
C
oss
9
pF
Reverse Transfer Capacitance
C
rss
1
pF
Turn-On Delay Time
t
d(on)
V
GS(on)
= 4.0 V, R
G
= 10
,
45
ns
Rise Time
t
r
V
DD
= 5.0 V, I
D
= 10 mA, R
L
= 500
75
ns
Turn-Off Delay Time
t
d(off)
25
ns
Fall Time
t
f
80
ns
Marking: JA
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
PG.
R
G
DUT
R
L
V
DD
= 1 s
Duty Cycle
1 %
0
V
GS
Gate
voltage
waveform
Drain
current
waveform
V
GS
I
D
0
10 %
V
GS(on)
I
D
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
90 %
90 %
PA603T
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Derating Factor - %
0
100
80
60
40
20
T
C
- Case Temperature - C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mW
0
350
300
250
200
150
100
50
T
A
- Ambient Temperature - C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - mA
0
120
100
80
60
40
20
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - mA
0
100
10
1
0.1
0.01
0.001
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
30
2.4
2.2
2.0
1.8
1.6
1.4
1.2
T
ch
- Channel Temperature - C
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - mS
1
100
I
D
- Drain Current mA
Free air
V
DS
= 5.0 V
Pulsed
measurement
40
20
60
80
100
120 140
160
25
50
75
100
125
150
Per one unit
Total
2
4
6
8
10
12
14
Pulsed
measurement
8 V
6 V
4 V
V
GS
= 2 V
5
10
15
T
A
= 150 C
75 C
25 C
25 C
0
30
60
90
120
150
V
DS
= 5.0 V
I
D
= 1 A
50
20
10
5
2
1
2
5
10
20
50
100
V
DS
= 5.0 V
25 C
75 C
150 C
T
A
= 25 C
PA603T
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-State Resistance -
0
100
50
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
1
150
100
50
0
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-State Resistance -
30
140
120
100
80
60
40
20
T
ch
- Channel Temperature - C
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.5
50
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
5
500
I
D
- Drain Current - mA
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Source to Drain Current - mA
0.5
100
10
1
0.1
V
SD
- Source to Drain Voltage - V
Pulsed
measurement
4
8
12
16
20
I
D
= 1 mA
I
D
= 10 mA
2
5
10
20
50
100
T
A
= 150 C
75 C
25 C
25 C
V
GS
= 4 V
Pulsed
measurement
0
30
60
90
120
150
V
GS
= 4 V
I
D
= 10 mA
100
20
10
5
2
1
0.5
0.2
0.1
1
2
5
10
20
50 100
C
iss
C
oss
C
rss
V
GS
= 0
f = 1 MHz
200
100
50
20
10
5
10
20
50
100
200
500
t
d(on)
t
f
t
d(off)
V
DD
= 5.0 V
V
GS
= 4 V
R
G
= 10
0.6
0.7
0.8
0.9
1
t
r
PA603T
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
PA603T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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