SILICON TRANSISTOR
FEATURES
Low Current, High Gain
|S
21e
|
2
= 9 dB TYP. @V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 8.5 dB TYP. @V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
A Super Mini Mold Package Adopted
Built-in 2 Transistors (2
2SC5179)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
PA807T
Loose products
(50 PCS)
PA807T-T1
Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
30 in 1 element
mW
60 in 2 elements
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
65 to +150
C
PA807T
Document No. P12153EJ2V0DS00 (2nd edition)
(Previous No. ID-3641)
Date Published November 1996 N
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
2.10.1
1.250.1
2.00.2
1.3
0.65
0.65
0.2
+0.1
0
1
2
3
6
5
4
XY
0.90.1
0.7
0 to 0.1
0.15
+0.1
0
PACKAGE DRAWINGS
(Unit: mm)
1994
DATA SHEET
1995
6
5
4
1
2
3
Q
1
Q
2
PIN CONNECTIONS
PIN CONFIGURATION (Top View)
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PA807T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
A
DC Current Gain
h
FE
V
CE
= 2 V, I
C
= 7 mA
Note 1
70
140
Gain Bandwidth Product (1)
f
T
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
10
13
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
8.5
12
GHz
Feed-back Capacitance
C
re
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.6
pF
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
7.5
9
dB
Insertion Power Gain (2)
|S
21e
|
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
7
8.5
dB
Noise Figure (1)
NF
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
1.5
2
dB
Noise Figure (2)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
1.5
2
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 2 V, I
C
= 7 mA
0.85
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
Notes 1. Pulse Measurement: Pw
350
s, Duty cycle
2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
KB
Marking
T84
h
FE
Value
70 to 140
TYPICAL CHARACTERISTICS (T
A
= 25
C)
Ambient Temperature T
A
(C)
Total Power Dissipation P
T
(mW)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
100
200
0
50
100
150
50
40
30
20
10
0
0.5
1.0
25
20
15
10
5
0
1.0
2.0
3.0
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
V
CE
= 2 V
30 mW
60 mW
2 Elements in Total
Per Element
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
50
20
10
1
2
5
10
20
50
100
V
CE
= 2 V
V
CE
= 1 V
Collector Current I
C
(mA)
DC Current Gain h
FE
PA807T
3
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Noise Figure (dB)
Collector Current I
C
(mA)
NOISE FIGURE
vs. COLLECTOR CURRENT
Collector Current I
C
(mA)
Insertion Power Gain |S
21e
|
2
(dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Collector to Base Voltage V
CB
(V)
Feed-back Capacitance C
re
(pF)
FEED-BACK CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
f = 2 GHz
V
CE
= 2 V
15
10
5
1
2
3
5
7
10
20
V
CE
= 1 V
V
CE
= 2 V
10
5
0
1
2
3
5
7
10
20
V
CE
= 1 V
V
CE
= 2 V
f = 2 GHz
3
2
1
1
2
3
5
7
10
f = 1 MHz
0.8
0.6
0.4
0.2
0.0
2.0
4.0
6.0
8.0
10.0
V
CE
= 1 V
PA807T
4
S-PARAMETERS
V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
4.0
8.1
11.5
15.5
18.8
22.1
25.6
28.4
31.2
34.1
36.4
38.8
41.1
43.1
45.4
47.0
48.9
50.3
51.9
53.4
ANG
3.7
7.5
10.6
14.9
17.9
22.1
25.8
29.1
33.3
35.8
40.3
43.4
46.8
50.7
53.4
57.1
60.0
62.8
65.7
69.0
MAG
0.994
0.992
0.980
0.959
0.949
0.923
0.901
0.875
0.851
0.832
0.806
0.781
0.761
0.736
0.719
0.698
0.677
0.658
0.642
0.622
ANG
83.4
82.6
79.2
75.4
72.8
69.9
66.8
64.2
61.7
59.8
57.6
55.7
54.3
52.7
50.9
49.7
48.5
47.3
46.4
45.8
MAG
1.968
1.939
1.930
2.014
1.934
1.988
1.951
1.931
1.996
1.900
1.963
1.944
1.909
1.936
1.870
1.878
1.849
1.810
1.786
1.773
MAG
0.020
0.038
0.058
0.075
0.091
0.107
0.122
0.136
0.148
0.158
0.170
0.179
0.189
0.196
0.205
0.211
0.215
0.222
0.227
0.231
MAG
0.982
0.983
0.973
0.955
0.946
0.918
0.900
0.873
0.845
0.827
0.799
0.776
0.753
0.718
0.695
0.663
0.634
0.609
0.581
0.554
ANG
174.3
167.5
161.8
156.4
150.9
146.3
141.7
137.1
133.2
129.5
125.6
121.7
118.0
114.1
110.7
107.2
104.0
100.6
97.9
94.7
V
CE
= 1 V, I
C
= 3 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
7.0
13.6
19.1
24.5
28.7
32.1
35.6
37.8
40.0
41.8
43.4
44.6
46.0
47.1
48.3
48.9
49.9
50.5
51.3
52.2
ANG
6.3
12.8
18.1
25.4
29.6
35.8
41.6
46.0
51.0
54.6
59.2
61.8
65.0
67.5
70.0
71.8
73.7
75.3
77.3
79.0
MAG
0.975
0.951
0.913
0.857
0.819
0.765
0.720
0.680
0.645
0.616
0.587
0.561
0.538
0.517
0.502
0.483
0.469
0.457
0.446
0.434
ANG
83.2
79.3
74.7
70.9
67.7
65.8
63.4
62.2
61.4
60.5
59.5
59.0
58.2
58.2
57.4
57.5
57.2
56.9
56.8
56.7
MAG
5.517
5.308
5.147
5.209
4.893
4.844
4.709
4.495
4.406
4.184
4.048
3.894
3.693
3.545
3.369
3.227
3.089
2.965
2.842
2.744
MAG
0.019
0.037
0.054
0.067
0.080
0.092
0.101
0.111
0.118
0.127
0.135
0.143
0.150
0.158
0.165
0.173
0.180
0.187
0.194
0.201
MAG
0.932
0.914
0.881
0.833
0.797
0.737
0.687
0.636
0.583
0.541
0.495
0.452
0.420
0.381
0.354
0.325
0.299
0.276
0.254
0.234
ANG
168.9
160.7
152.7
145.3
139.4
133.4
127.6
122.5
117.5
113.4
108.6
104.4
101.0
97.1
94.2
91.2
88.6
85.9
83.7
81.2
PA807T
5
S-PARAMETERS
V
CE
= 1 V, I
C
= 5 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
9.0
17.3
23.7
28.9
32.6
35.4
37.9
39.3
40.8
41.8
42.8
43.5
44.4
45.1
45.9
46.2
46.8
47.5
48.0
48.7
ANG
9.9
19.0
25.7
34.0
39.7
46.5
52.3
56.2
59.9
62.7
65.8
67.2
69.6
71.0
72.5
73.7
74.4
75.1
76.8
78.3
MAG
0.957
0.911
0.847
0.776
0.723
0.664
0.618
0.579
0.547
0.522
0.499
0.479
0.459
0.444
0.431
0.420
0.409
0.399
0.392
0.384
ANG
83.2
77.1
72.5
69.7
66.9
66.2
64.6
64.0
63.2
63.5
62.8
63.2
62.4
62.7
62.1
62.0
61.6
61.3
61.0
60.7
MAG
8.234
7.897
7.518
7.443
6.901
6.572
6.182
5.737
5.382
5.014
4.692
4.411
4.134
3.902
3.681
3.493
3.326
3.175
3.035
2.915
MAG
0.018
0.035
0.050
0.062
0.073
0.083
0.092
0.100
0.109
0.116
0.125
0.134
0.141
0.149
0.159
0.167
0.174
0.182
0.190
0.198
MAG
0.867
0.834
0.782
0.713
0.655
0.576
0.514
0.458
0.410
0.369
0.335
0.303
0.276
0.251
0.229
0.210
0.191
0.174
0.159
0.144
ANG
165.2
155.1
145.9
137.5
130.7
123.6
117.3
112.1
107.5
103.5
99.8
96.3
93.3
90.4
87.9
85.3
83.0
80.8
78.7
76.7
V
CE
= 1 V, I
C
= 7 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
10.4
19.6
26.1
31.0
33.9
36.0
37.8
38.7
39.7
40.1
40.9
41.1
42.0
42.7
43.1
43.7
44.0
44.6
45.2
46.1
ANG
15.0
27.5
36.5
44.7
50.7
56.1
60.3
63.2
66.1
68.0
70.3
71.3
73.4
74.0
75.7
76.3
77.1
77.5
78.9
81.0
MAG
0.938
0.875
0.796
0.716
0.660
0.601
0.559
0.524
0.497
0.476
0.457
0.442
0.426
0.413
0.404
0.395
0.385
0.377
0.371
0.365
ANG
80.9
76.0
71.5
68.7
67.4
66.5
65.8
65.9
65.7
66.0
65.3
65.4
65.3
64.8
64.6
64.5
64.0
63.6
63.2
62.9
MAG
0.018
0.034
0.047
0.058
0.069
0.077
0.086
0.095
0.104
0.112
0.121
0.129
0.138
0.146
0.155
0.163
0.172
0.180
0.190
0.197
MAG
0.793
0.737
0.661
0.574
0.517
0.446
0.395
0.348
0.311
0.278
0.251
0.227
0.204
0.185
0.167
0.151
0.135
0.122
0.108
0.097
ANG
161.8
149.4
139.2
130.0
122.7
116.0
110.4
105.9
102.0
98.4
95.1
92.0
89.4
86.7
84.3
82.1
80.1
77.8
76.0
74.1
MAG
10.022
9.509
8.774
8.493
7.755
7.177
6.636
6.072
5.617
5.189
4.824
4.499
4.203
3.963
3.722
3.525
3.345
3.191
3.042
2.913
PA807T
6
S-PARAMETERS
V
CE
= 2 V, I
C
= 1 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
3.6
7.4
10.5
14.4
17.4
20.4
23.8
26.5
29.2
32.0
34.1
36.4
38.4
40.4
42.6
44.1
45.9
47.4
48.8
50.4
ANG
3.3
6.8
9.8
13.9
16.7
20.7
24.1
27.3
31.1
33.5
37.8
40.5
44.0
47.4
50.2
53.5
56.4
59.0
61.6
64.7
MAG
0.996
0.993
0.983
0.964
0.955
0.932
0.913
0.888
0.865
0.847
0.822
0.803
0.782
0.758
0.743
0.719
0.699
0.681
0.666
0.647
ANG
84.7
83.0
80.2
76.3
73.9
71.0
68.0
65.9
63.8
61.6
59.3
57.8
56.1
54.6
53.0
51.6
50.5
49.6
48.8
48.0
MAG
2.003
1.935
1.940
2.017
1.946
1.993
1.957
1.942
2.004
1.911
1.973
1.951
1.928
1.956
1.889
1.896
1.873
1.835
1.815
1.801
MAG
0.018
0.036
0.052
0.069
0.085
0.099
0.113
0.126
0.137
0.147
0.159
0.168
0.177
0.184
0.193
0.198
0.204
0.210
0.215
0.220
MAG
0.982
0.985
0.977
0.960
0.952
0.925
0.908
0.884
0.859
0.840
0.815
0.795
0.772
0.741
0.716
0.689
0.659
0.635
0.606
0.581
ANG
173.6
168.2
162.7
157.1
152.1
147.7
143.2
138.8
135.0
131.4
127.7
124.0
120.4
116.7
113.2
109.8
106.7
103.4
100.7
97.6
V
CE
= 2 V, I
C
= 3 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
6.3
12.5
17.5
22.6
26.4
29.6
33.0
35.0
37.0
38.9
40.3
41.4
43.0
43.9
44.9
45.6
46.4
47.2
47.8
48.6
ANG
5.7
11.6
16.6
23.1
27.0
32.9
38.0
42.0
46.6
49.9
54.0
56.5
59.2
61.5
63.5
64.9
66.4
67.7
69.2
70.4
MAG
0.979
0.959
0.924
0.874
0.838
0.787
0.745
0.706
0.673
0.645
0.617
0.593
0.569
0.548
0.532
0.517
0.501
0.488
0.478
0.464
ANG
84.9
79.6
75.2
72.2
69.1
67.6
65.0
63.8
63.0
61.9
61.1
60.8
60.2
59.9
59.5
59.1
58.7
58.6
58.4
58.2
MAG
5.575
5.330
5.178
5.267
4.943
4.915
4.769
4.578
4.507
4.285
4.163
4.009
3.814
3.672
3.499
3.349
3.213
3.079
2.959
2.863
MAG
0.017
0.033
0.049
0.062
0.074
0.086
0.095
0.104
0.112
0.120
0.128
0.136
0.143
0.150
0.157
0.164
0.172
0.178
0.185
0.193
MAG
0.933
0.922
0.893
0.851
0.815
0.759
0.713
0.664
0.612
0.572
0.525
0.485
0.452
0.413
0.385
0.356
0.330
0.307
0.286
0.265
ANG
170.0
161.5
154.0
146.8
141.1
135.2
129.6
124.5
119.7
115.6
111.0
106.8
103.4
99.6
96.7
93.6
90.9
88.2
85.9
83.5
PA807T
7
S-PARAMETERS
V
CE
= 2 V, I
C
= 5 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
8.1
15.6
21.4
26.5
30.0
32.3
34.9
36.2
37.6
38.5
39.7
40.2
41.0
41.6
42.3
42.6
43.3
43.7
44.2
45.0
ANG
8.3
15.7
22.2
30.3
35.3
41.5
46.7
50.2
53.7
55.9
58.4
59.5
61.3
61.9
63.2
63.4
63.7
63.8
64.7
64.8
MAG
0.964
0.926
0.868
0.801
0.752
0.696
0.650
0.612
0.581
0.557
0.534
0.515
0.495
0.481
0.467
0.456
0.446
0.435
0.427
0.419
ANG
82.5
78.3
73.6
71.7
68.6
67.5
66.1
65.7
65.0
64.6
64.6
64.6
64.1
64.0
63.7
63.4
63.3
62.7
62.5
62.3
MAG
8.518
8.125
7.721
7.619
7.082
6.779
6.401
5.962
5.613
5.244
4.918
4.631
4.346
4.103
3.875
3.680
3.502
3.338
3.193
3.064
MAG
0.017
0.032
0.046
0.057
0.068
0.077
0.086
0.094
0.102
0.111
0.118
0.127
0.134
0.142
0.150
0.157
0.165
0.172
0.181
0.188
MAG
0.885
0.859
0.811
0.742
0.689
0.612
0.550
0.495
0.446
0.406
0.369
0.337
0.310
0.285
0.263
0.244
0.225
0.210
0.193
0.178
ANG
167.7
157.0
148.0
139.7
132.9
125.8
119.7
114.6
109.9
105.8
101.9
98.5
95.5
92.6
90.0
87.4
85.1
83.0
80.9
78.9
V
CE
= 2 V, I
C
= 7 mA, Z
O
= 50
FREQUENCY
S11
S21
S12
S22
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
ANG
9.4
17.6
23.4
28.2
31.0
32.9
34.6
35.3
36.4
36.8
37.7
37.8
38.6
39.0
39.7
40.1
40.5
41.0
41.4
42.1
ANG
10.5
19.7
27.4
36.2
41.6
47.0
51.4
54.0
56.3
57.7
59.5
59.6
61.1
61.2
62.1
61.7
61.5
60.6
60.8
60.9
MAG
0.952
0.897
0.825
0.751
0.696
0.640
0.598
0.564
0.537
0.517
0.496
0.482
0.465
0.456
0.443
0.435
0.426
0.418
0.411
0.406
ANG
82.0
77.4
73.3
71.2
69.1
68.1
67.5
67.2
67.0
67.1
67.0
67.0
66.5
66.8
66.1
65.7
65.4
65.1
64.7
64.5
MAG
0.016
0.031
0.043
0.053
0.063
0.073
0.081
0.089
0.097
0.105
0.114
0.122
0.130
0.138
0.147
0.154
0.163
0.171
0.179
0.187
MAG
0.836
0.794
0.731
0.645
0.579
0.500
0.440
0.393
0.352
0.319
0.290
0.265
0.242
0.223
0.204
0.189
0.175
0.162
0.148
0.137
ANG
165.5
153.3
143.3
133.7
126.3
119.3
113.3
108.6
104.4
100.8
97.3
94.4
91.6
89.0
86.5
84.3
82.3
80.2
78.3
76.6
MAG
11.040
10.358
9.657
9.225
8.418
7.759
7.124
6.499
6.003
5.536
5.135
4.801
4.484
4.221
3.974
3.760
3.565
3.393
3.248
3.106
PA807T
8
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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