PART NUMBER
UPC2710T
UPC2713T
PACKAGE OUTLINE
T06
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
I
CC
Circuit Current (no signal)
mA
16
22
29
9
12
15
G
S
Small Signal Gain
dB
30
33
36.5
26
29
33
f
U
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
GHz
0.7
1.0
0.9
1.2
G
S
Gain Flatness, f = 0.1 ~ 0.6 GHz
dB
0.8
f = 0.1
0.8 GHz
0.8
P
SAT
Saturated Output Power
dBm
11
13.5
4
7
P
1dB
Output Power at 1dB Compression Point
dBm
7.5
-4
NF
Noise Figure
dB
3.5
5
3.2
4.5
RL
IN
Input Return Loss
dB
3
6
10
13
RL
OUT
Output Return Loss
dB
9
12
6
9
ISOL
Isolation
dB
34
39
35
40
G
T
Gain -Temperature Coefficient
dB/
C
-0.006
-0.016
R
TH
Thermal Resistance (Junction to Ambient)
C/W
200
200
The UPC2710T and UPC2713T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require high
gain and wide-band operation. They are designed for low cost
gain stages in cellular radios, GPS receivers, DBS tuners,
PCN, and test/measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
UPC2710T
UPC2713T
DESCRIPTION
1.5 GHz SILICON MMIC
WIDE-BAND AMPLIFIER
FEATURES
FREQUENCY RESPONSE: 1.5 GHz
HIGH GAIN: 33 dB (UPC2710T)
SATURATED OUTPUT POWER:
+13.5 (UPC2710T)
INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
5 V SINGLE SUPPLY VOLTAGE
SUPER SMALL PACKAGE
TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
Frequency, f (GHz)
Gain, G
S
(dB)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C, f = 0.5 GHz, V
CC
= 5 V)
California Eastern Laboratories
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CC
Supply Voltage
V
6
P
IN
Input Power
dBm
+10
P
T
Power Dissipation
mW
280
2
T
OP
Operating Temperature
C
-40 to +85
T
STG
Storage Temperature
C
-55 to +150
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= +85
C).
RECOMMENDED
OPERATING CONDITIONS
SYMBOL
PARAMETER
UNITS
MIN
TYP
MAX
V
CC
Supply Voltage
V
4.5
5.0
5.5
UPC2710T, UPC2713T
TEST CIRCUIT
*
* UPC2710T only
UPC2710T
NOISE FIGURE AND
INSERTION GAIN vs. FREQUENCY
UPC2713T
NOISE FIGURE AND
INSERTION GAIN vs. FREQUENCY
CIRCUIT CURRENT vs. VOLTAGE
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Supply Voltage, V
CC
(V)
Operating Temperature, T
OP
(
C)
Circuit Current, I
CC
(mA)
Circuit Current, I
CC
(mA)
Insertion Power Gain, G
P
(dB)
Insertion Power Gain, G
P
(dB)
CIRCUIT CURRENT vs. TEMPERATURE
Frequency, f (GHz)
Frequency, f (GHz)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
X
X: Typical SSB Third Order Intercept Point
UPC2710T, UPC2713T
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
UPC2713T
RETURN LOSS vs. FREQUENCY
UPC2710T
POWER vs. FREQUENCY
UPC2713T
POWER vs. FREQUENCY
Power (dBm)
Power (dBm)
Input Return Loss, RL
IN
(dB)
Output Return Loss, RL
OUT
(dB)
Input Return Loss, RL
IN
(dB)
Output Return Loss, RL
OUT
(dB)
Frequency, f (GHz)
Frequency, f (GHz)
Frequency, f (GHz)
Isolation, ISOL (dB)
Isolation, ISOL (dB)
Frequency, f (GHz)
Frequency, f (GHz)
Frequency, f (GHz)
0.1 0.3 1.0 3.0
0
-10
-20
-30
-40
V
CC
= 5.0V
UPC2710T
ISOLATION vs. FREQUENCY
UPC2713T
ISOLATION vs. FREQUENCY
UPC2710T
RETURN LOSS vs. FREQUENCY
X: Typical SSB Third Order Intercept Point
Noise Figure, NF (dB)
Frequency, f (GHz)
UPC2710T
OUTPUT POWER vs.
INPUT POWER AND VOLTAGE
UPC2713T
OUTPUT POWER vs.
INPUT POWER AND VOLTAGE
NOISE FIGURE vs. FREQUENCY
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
UPC2713T
OUTPUT POWER vs.
INPUT POWER AND TEMPERATURE
UPC2710T
OUTPUT POWER vs.
INPUT POWER AND TEMPERATURE
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
UPC2710T, UPC2713T
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