3 V, 2.7 GHz Si MMIC
WIDEBAND AMPLIFIER
UPC2745T
NOISE FIGURE AND
GAIN vs. FREQUENCY
V
CC
= 3.0 V, I
CC
= 7.5 mA
Gain, G
S
(dB)
Noise Figure, NF (dB)
10
12
8
6
0
1000
2000
3000
G
S
NF
7.0
6.5
6.0
5.5
Frequency, f (MHz)
PART NUMBER
UPC2745T
PACKAGE OUTLINE
TO6
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CC
Circuit Current (no signal)
V
CC
= 3.0 V
mA
5.0
7.5
10.0
V
CC
= 1.8 V
mA
4.5
G
S
Small Signal Gain,
f = 500 MHz, V
CC
= 3.0 V
dB
9
12
14
f = 1000 MHz, V
CC
= 3.0 V
dB
12
f = 2000 MHz, V
CC
= 3.0 V
dB
11
f = 500 MHz, V
CC
= 1.8 V
dB
7
f
U1
Upper Limit Operating Frequency, V
CC
= 3.0 V
GHz
2.3
2.7
V
CC
= 1.8 V
GHz
1.8
P
SAT
Saturated Output Power,
f = 500 MHz, V
CC
= 3.0 V
dBm
-4
-1
f = 1000 MHz, V
CC
= 3.0 V
dBm
-2.5
f = 2000 MHz, V
CC
= 3.0 V
dBm
-3.5
f = 500 MHz, V
CC
= 1.8 V
dBm
-11
NF
Noise Figure,
f = 500 MHz, V
CC
= 3.0 V
dB
6
7.5
f = 1000 MHz, V
CC
= 3.0 V
dB
5.5
f = 2000 MHz, V
CC
= 3.0 V
dB
5.7
f = 500 MHz, V
CC
= 1.8 V
dB
8
RL
IN
Input Return Loss,
f = 500 MHz, V
CC
= 3.0 V
dB
8
11
f = 1000 MHz, V
CC
= 3.0 V
dB
13
f = 2000 MHz, V
CC
= 3.0 V
dB
14
f = 500 MHz, V
CC
= 1.8 V
dB
6.5
RL
OUT
Output Return Loss,
f = 500 MHz, V
CC
= 3.0 V
dB
2.5
5.5
f = 1000 MHz, V
CC
= 3.0 V
dB
6.5
f = 2000 MHz, V
CC
= 3.0 V
dB
8.5
f = 500 MHz, V
CC
= 1.8 V
dB
6
ISOL
Isolation,
f = 500 MHz, V
CC
= 3.0 V
dB
33
38
f = 1000 MHz, V
CC
= 3.0 V
dB
33
f = 2000 MHz, V
CC
= 3.0 V
dB
30
f = 500 MHz, V
CC
= 1.8 V
dB
35
OIP
3
SSB Output Third Order Intercept
, f1 = 500 MHz, f2 = 510 MHz, V
CC
= 3.0 V
dBm
7
f1 = 1000 MHz, f2 = 1010 MHz, V
CC
= 3.0 V
dBm
5
f1 = 500 MHz, f2 = 502 MHz, V
CC
= 1.8 V
dBm
-5
R
TH (J-A)
Thermal Resistance (Junction to Ambient)
Free Air
C/W
620
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
C/W
630
FEATURES
WIDE FREQUENCY RESPONSE: 2.7 GHz
LOW VOLTAGE OPERATION: 3 V NOMINAL (1.8 MIN)
LOW POWER CONSUMPTION: 22.5 mW TYP
SUPER SMALL PACKAGE
TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2745T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with f
T
approaching 20 GHz.
This device is suitable as a buffer amplifier for cellular and
cordless telephone applications. Operating on a 3 volt supply
(1.8 volt minimum) this IC is ideally suited for hand-held,
portable designs.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C, Z
L
= Z
S
= 50
)
Note: 1.The gain at f
U
is 3 dB down from the gain at 100 MHz.
California Eastern Laboratories
UPC2745T
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CC
Supply Voltage
V
4.0
I
CC
Total Supply Current
mA
16
P
IN
Input Power
dBm
0
P
T
Total Power Dissipation
2
mW
280
T
OP
Operating Temperature
C
-40 to +85
T
STG
Storage Temperature
C
-55 to +150
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= 85
C).
SYMBOLS
PARAMETERS
UNITS
MIN
TYP MAX
V
CC
Supply Voltage
V
1.8
3
3.3
T
OP
Operating Temperature
C
-40
25
85
RECOMMENDED OPERATING CONDITIONS
TEST CIRCUIT
V
CC
50
OUT
1000 pF
IN
50
1000 pF
1000 pF
6
1
4
2, 3, 5
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Circuit Current, Icc (mA)
0 1 2 3 4
10
8
6
4
2
0
Circuit Current, Icc (mA)
Supply Voltage, Vcc (V)
GAIN AND NOISE FIGURE
vs. FREQUENCY
-40 -20 0 20 40 60 80 100
10
8
6
4
2
0
V
CC
= 3.0 V
V
CC
= 1.8 V
CIRCUIT CURRENT vs. TEMPERATURE
Temperature, T
A
(
C)
0.1 0.3 1.0 3.0
15
10
5
0
-5
-10
V
CC
= 3.0 V
V
CC
= 2.7 V
V
CC
= 3.3 V
V
CC
= 1.8 V
NF
Gp
V
CC
= 3.0 V
V
CC
= 2.7 V
V
CC
= 3.3 V
V
CC
= 1.8 V
10
9
8
7
6
5
Gain, Gs (dB)
Frequency, f (MHz)
15
13
11
9
7
0
1000
2000
3000
+85C
+25C
-40C
V
CC
= 3.0 V
I
CC
= 7.5 mA
Gain, G
S
(dB)
Frequency, f (MHz)
GAIN vs. FREQUENCY
AND TEMPERATURE
CIRCUIT CURRENT vs. VOLTAGE
Noise Figure, NF (dB)
0.1 0.3 1.0 3.0
-10
-20
-30
-40
-50
-60
V
CC
= 1.8 V
V
CC
= 3.0 V
Return Loss (dB)
0.1 0.3 1.0 3.0
0
-10
-20
-30
-40
RLin
RLout
V
CC
= 1.8 V
V
CC
= 3.0 V
V
CC
= 1.8 V
V
CC
= 3.0 V
RETURN LOSS vs. FREQUENCY
Frequency, f (GHz)
ISOLATION vs. FREQUENCY
Isolation, ISOL (dB)
Frequency, f (GHz)
-2.0
-4.0
-6.0
-8.0
0
1000
2000
3000
P
1dB
P
SAT
V
CC
= 3.0 V
I
CC
= 7.5 mA
Output Power, (dBm)
Frequency, f (MHz)
Psat
P
1dB
0 1000 2000 3000
-8
-12
-16
-20
V
CC
= 1.8 V
I
CC
= 4.5 mA
Frequency, f (MHz)
-50 -40 -30 -20 -10 0
10
0
-10
-20
-30
-40
f = 500 MH
Z
V
CC
= 3.0 V
V
CC
=2.7V
V
CC
= 3.3 V
V
CC
= 1.8 V
OUTPUT POWER vs. INPUT POWER
AND VOLTAGE
Output Power (dBm)
Input Power (dBm)
-50 -40 -30 -20 -10 0
10
0
-10
-20
-30
-40
f = 500 MHZ
V
CC
= 3.0 V
T
A
= +85 C
T
A
= +25 C
T
A
= -40 C
T
A
= +25 C
T
A
= -40 C
T
A
= +85 C
Output Power (dBm)
Input Power, P
IN
(dBm)
OUTPUT POWER vs. INPUT POWER
AND TEMPERATURE
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
UPC2745T
OUTPUT POWER vs. FREQUENCY
OUTPUT POWER vs. FREQUENCY
Output Power (dBm)
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE T06
+0.2
-0.3
2.8
1.5
+0.2
-0.1
1
2
3
4
5
6
1.90.2
-0.05
+0.10
0.3
0.130.1
1.1
+0.2
-0.1
0 to 0.1
0.95
0.95
0.8
2.90.2
LEAD CONNECTIONS
(Bottom View)
(Top View)
C1Q
1. INPUT
2.. GND
3. GND
4. OUTPUT
5. GND
6. V
CC
2
1
4
5
6
2
1
4
5
6
3
3
Note:
All dimensions are typical unless otherwise specified.
3.10
4
5
3
2
1
6
1.0
MIN
0.5 MIN
0.95
1.0
MIN
RECOMMENDED P.C.B. LAYOUT
(Units in mm)
EQUIVALENT CIRCUIT
V
CC
OUT
IN
ORDERING INFORMATION
PART NUMBER
QTY
UPC2745T-E3
3K/Reel
Note:
Embossed Tape, 8 mm wide.
UPC2745T
EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA
CALIFORNIA EASTERN LABORATORIES, INC
Headquarters
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
(408) 988-3500
Telex 34-6393/FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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