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Электронный компонент: UPC8103T

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DESCRIPTION
PC8103T and
PC8108T are silicon monolithic integrated circuits designed as mixer-oscillator series for
pager system. Due to 1 V supply voltage, these ICs are suitable for low voltage pager system. These ICs are
packaged in 6 pin mini mold suitable for high-density surface mounting.
These ICs are manufactured using NEC's 20 GHz f
T
NESAT
TM
III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials contributes excellent DC, AC perform-
ance. Thus, these ICs are utilized as 1 V voltage ICs.
FEATURES
1 V supply voltage: V
CC
= 1.0 V to 2.0 V
Low current consumption
PC8103T: l
CC
= 1.0 mA
TYP.
@ V
CC
= 1.0 V
PC8108T: l
CC
= 1.5 mA
TYP.
@ V
CC
= 1.0 V
Wide band operation
PC8103T: f
RF
= 150 MHz to 330 MHz
PC8108T: f
RF
= 150 MHz to 930 MHz
High-density surface mounting: 6 pin mini mold
ORDERING INFORMATION
PART NUMBER
PACKAGE
SUPPLYING FORM
PC8103T-E3
6pin mini mold
Embossed tape 8 mm wide, Pin 1, 2, 3 face to perforation side of
PC8108T-E3
tape. QTY 3 kp/Reel
Note To order evaluation samples, please contact your local NEC sales office. (Order number:
PC8103T,
PC8108T)
PIN CONNECTION
Caution Electro-static sensitive devices
BIPOLAR ANALOG INTEGRATED CIRCUITS
PC8103T,
PC8108T
MIXER + OSCILLATOR IC FOR PAGER SYSTEM
Document No. IC-3450
(O.D. No. IC-8980)
Date Published July 1995 P
Printed in Japan
(Top View)
3
2
1
4
5
6
(Bottom View)
3
2
1
4
5
6
Markings
PC8103T: C2C
PC8108T: C2F
1 : RF INPUT
2 : GND
3 : OSC EMITTER
4 : OSC BASE
5 : V
CC
6 : IF OUTPUT
C2C
1995
DATA SHEET
PC8103T,
PC8108T
2
INTERNAL BOLOCK DIAGRAM (IN COMMON)
BIAS
4
5
6
3
2
1
SYSTEM APPLICATION EXAMPLE AS PAGER
PC8102T
BPF
PC8103T
BPF
IF
150 MHz
to
330 MHz
Low noise
transistor
BPF
PC8108T
BPF
IF
450 MHz to 930 MHz
This system application example schematically presents the chip set product line-up only, and does not
imply a detail application circuit (In the case of application circuit example for
PC8103T and
PC8108T, please
refer to page 21).
For details on the related devices, refer to the latest data sheet of each device.
Note
Resonator must be externally
equipped with 3 and 4 pins.
(Refer to pin explanations)
PC8103T,
PC8108T
3
PIN EXPLANATION (
PC8103T,
PC8108T IN COMMON)
PIN NO.
1
2
3
4
5
6
PIN NAME
RF input
GND
OSC Emitter
OSC Base
V
CC
IF Output
SUPPLY
VOLTAGE (V)
--
0
--
--
1.0 to 2.0
Same bias
as V
CC
through
external
inductor
(L)
PIN
VOLTAGE (V)
0.77
--
0.19
0.95
--
--
FUNCTION AND APPLICATION
RF input for mixer. This port
is low impedance.
This ground pin must be
connected to the system
ground with minimum
inductance. Ground pattern
on the board should be
formed as wide as possible.
Track length should be kept as
short as possible.
Emitter, base pins of internal
transistor for oscillator.
These pins should be exter-
nally equipped with resonator
circuit of X'tal or LC.
Supply voltage pin.
Connect bypass capacitor (eg
1 000 pF) to minimize ground
impedance.
IF output pin from mixer.
This pin is designed as open
collector and should be
equipped with inductor (L)
because of high impedance
port.
EQUIVALENT CIRCUIT
4
3
2
1
6
5
Note
Each PIN VOLTAGE is measured with V
CC
= 1.0 V.
PC8103T, PC8108T
4
Unless otherwise specified, both product in common.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
CONDITIONS
Supply Voltage
V
CC
4.0
V
T
A
= +25
C, Pin 5 and 6
Power Dissipation
P
D
280
mW
Mounted on 50
50
1.6 mm double copper
clad epoxy glass PWB at T
A
= +85
C
Operating Temperature
T
A
-
40 to +85
C
Storage Temperature
T
stg
-
55 to +150
C
IF Output Voltage Peak Level
V
IFout MAX.
5
V
T
A
= +25
C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Supply Voltage
V
CC
1.0
1.05
2.0
V
Pin 5 and 6
Operating Temperature
T
A
-
25
+25
+75
C
Possible to oscillate
RF Frequency
f
RF
150
330
MHz
PD8103T
RF Frequency
f
RF
150
930
MHz
PD8108T
ELECTRICAL CHARACTERISTICS (T
A
= +25 C, V
CC
= 1.0 V, Z
S
= 50
, Z
L
= 2 k
, f
IF
= 20 MHz,
P
Loin
=
-
21 dBm externally, Upper local
Note
)
PARAMETER
SYMBOL
PC8103T
PC8108T
UNIT
CONDITIONS
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Circuit Current
I
CC
0.55
1
1.4
1.0
1.5
2.1
mA
No input signals
Conversion Gain 1
CG1
13
16
19
17.5
20.5
23.5
dB
f
RFin
= 150 MHz,
TEST CIRCUIT 1
Conversion Gain 2
CG2
12.5
15.5
18.5
17
20
23
dB
f
RFin
= 280 MHz,
TEST CIRCUIT 1
Conversion Gain 3
CG3
12.5
15.5
18.5
17
20
23
dB
f
RFin
= 330 MHz,
TEST CIRCUIT 1
Conversion Gain 4
CG4
16
19
22
dB
f
RFin
= 450 MHz,
TEST CIRCUIT 1
Conversion Gain 5
CG5
12
15
18
dB
f
RFin
= 930 MHz,
TEST CIRCUIT 1
Note
Upper local means `f
IF
= f
Loin
f
RFin
'.
PC8103T,
PC8108T
5
STANDARD CHARACTERISTICS FOR REFERENCE (T
A
= +25 C, V
CC
= 1.0 V, Z
S
= Z
L
= 50
,
f
IF
= 20 MHz, P
Loin
externally, Upper local)
PARAMETER
SYMBOL
PC8103T
PC8108T
UNIT
CONDITIONS
P
Loin
=
P
Loin
=
P
Loin
=
P
Loin
=
21 dBm
10 dBm
21 dBm
10 dBm
Noise Figure 1
NF1
13
9
13
8.5
dB
f
RFin
= 150 MHz,
TEST CIRCUIT 2
Noise Figure 2
NF2
11.5
8
12
7
dB
f
RFin
= 280 MHz,
TEST CIRCUIT 2
Noise Figure 3
NF3
12
9
13
8
dB
f
RFin
= 330 MHz,
TEST CIRCUIT 2
Noise Figure 4
NF4
13.5
8
dB
f
RFin
= 450 MHz,
TEST CIRCUIT 2
Noise Figure 5
NF5
18
11.5
dB
f
RFin
= 930 MHz,
TEST CIRCUIT 2
Note
Upper local means `f
IF
= f
Loin
f
RFin
'.
PC8103T,
PC8108T
6
TEST CIRCUIT 1
R
S
= 50
, R
L
= 2 k
(CG MEASUREMENT)
1 000 pF
NC
3
2
1
4
5
6
1 000 pF
1 000 pF 3 300 pF 1 000 pF
V
CC
2 k
*
1 000 pF
50
C2C
150 H
50
C2
C1
50
C6
R
L
C3
C4
C5
Signal Generator (Lo)
Supplement:
(50
means impedance of measurement equipment)
Signal Generator (RF)
Spectrum Analyser
* Note On 50
measurement, this high inpedance IFout needs the calculatiuon as follows
CG (dB) = Measured value +20 log
10
TEST CIRCUIT 2
R
S
= R
L
= 50
(NF MEASUREMENT)
1 000 pF
NC
3
2
1
4
5
6
1 000 pF 3 300 pF 1 000 pF
V
CC
1 000 pF
C2C
20 MHz
Signal Generator (Lo)
50
C2
C6
L
C3
C4
C5
150 H
1 000 pF
C1
50
NF meter
NOISE SOURCE
50
2 k
50
PC8103T,
PC8108T
7
ILLUSTRATION OF TEST CIRCUITS ASSEMBLED ON EVALUATION BOARD
EX-LO
IF OUT
B
A
D
C
RF IN
A'
B'
C'
D'
IN
OUT
C6
C3
C4
C2
R
L
C5
C1
PC8103T
8108T
SURFACE (IC mounted pattern)
Backside (Ground pattern)
Note
(*1) 35
42
0.4 mm double sided copper clad polyimide board
(*2) Solder plated pattern
(*3) Surface vs. backside : A - A', B - B', C - C', D - D'
(*4)
should be removed.
(*5) In the care of NF measurement, remove R and short.
(*6)
: Through holes
PC8103T,
PC8108T
8
CHARACTERISTIC CURVES (Unless otherwise specified with TEST CIRCUIT 1 or 2)
--
PC8103T --
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
Supply Voltage V
CC
(V)
0
1
2
3
4
Circuit Current I
CC
(mA)
10
8
6
4
2
0
No signal
CIRCUIT CURRENT vs. OPERATING TEMPERATURE
Operating temperature T
A
(C)
40
0
20
60
100
Circuit Current I
CC
(mA)
20
40
80
8
7
6
5
4
3
2
1
0
V
CC
= 1.0 V
V
CC
= 1.5 V
V
CC
= 2.0 V
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
V
CC
= 0.9 V
V
CC
= 1.0 V
V
CC
= 1.5 V
V
CC
= 2.0 V
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
V
CC
= 0.9 V
V
CC
= 1.0 V
V
CC
= 1.5 V
V
CC
= 2.0 V
No signal
V
CC
= 0.9 V
PC8103T,
PC8108T
9
--
PC8103T --
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 1.0 V
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
T
A
=+85 C
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 1.0 V
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= +25 C
T
A
= +85 C
T
A
= 20 C
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 0.9 V
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
T
A
= +25 C
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 0.9 V
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
T
A
= +25 C
PC8103T,
PC8108T
10
--
PC8103T --
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 2.0 V
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
T
A
= +25 C
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 2.0 V
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 1.5 V
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
T
A
= +25 C
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 1.5 V
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
T
A
= +25 C
PC8103T,
PC8108T
11
--
PC8103T --
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 0.9 V
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
25
f
RFin
= 150 MHz
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.0 V
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
25
f
RFin
= 450 MHz
f
RFin
= 280 MHz
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.5 V
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
25
f
RFin
= 280 MHz
f
RFin
= 900 MHz
f
RFin
= 150 MHz
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 2.0 V
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
25
f
RFin
= 280 MHz
f
RFin
= 900 MHz
f
RFin
= 450 MHz
f
RFin
= 280 MHz
f
RFin
= 900 MHz
f
RFin
= 150 MHz
f
RFin
= 450 MHz
f
RFin
= 900 MHz
f
RFin
= 150 MHz
f
RFin
= 450 MHz
PC8103T,
PC8108T
12
--
PC8103T --
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.0 V
P
RFin
= 35 dBm
f
RFin
= 150 MHz
f
Loin
= 170 MHz
25
T
A
= +25 C
25
20
15
10
5
0
5
T
A
= +85 C
T
A
= 20 C
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.0 V
P
RFin
= 35 dBm
f
RFin
= 280 MHz
f
Loin
= 300 MHz
25
T
A
= +25 C
25
20
15
10
5
0
5
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
RF FREQUENCY vs. NOISE FIGURE
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Noise Figure NF (dB)
P
Loin
= 21 dBm
f
IF
= 20 MHz
Upper local
20
15
10
5
0
V
CC
= 1.0 V
V
CC
= 1.5 V
RF FREQUENCY vs. NOISE FIGURE
0.1
0.3
0.5
1
P
Loin
= 10 dBm
f
IF
= 20 MHz
Upper local
20
15
10
5
0
V
CC
= 1.0 V
V
CC
= 1.5 V
RF input frequency f
RFin
(GHz)
Noise Figure NF (dB)
T
A
= 40 C
PC8103T,
PC8108T
13
--
PC8103T --
RF input level vs. IF output level and IM
3
RF input level P
RFin
(dBm)
50
30
20
10
IF output level of each tone P
IF
(dBm)
3rd order intermodelation distortion level IM
3
(dBm)
+10
0
10
20
30
40
50
60
40
IM
3
IF
out
V
CC
= 1.0 V
f
Loin
= 170 MHz
P
Loin
= 21 dBm
f
RFin
(des)
= 150.0 MHz
f
RFin
(undes)
= 150.5 MHz
TEST CIRCUIT 1
RF input level vs. IF output level and IM
3
50
30
20
10
+10
0
10
20
30
40
50
60
40
IM
3
IF
out
V
CC
= 1.0 V
f
Loin
= 300 MHz
P
Loin
= 21 dBm
f
RFin
(des)
= 280.0 MHz
f
RFin
(undes)
= 280.5 MHz
TEST CIRCUIT 1
RF input level P
RFin
(dBm)
IF output level of each tone P
IF
(dBm)
3rd order intermodelation distortion level IM
3
(dBm)
PC8103T,
PC8108T
14
--
PC8108T --
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
Supply Voltage V
CC
(V)
0
1
2
3
4
Circuit Current I
CC
(mA)
14
12
10
8
6
4
2
0
No sigual
CIRCUIT CURRENT vs. OPERATING TEMPERATURE
Operating Temperature T
A
(C)
40
20
0
20
100
Circuit Current I
CC
(mA)
10
9
8
7
6
5
4
3
2
1
0
V
CC
= 1.0 V
V
CC
= 1.5 V
V
CC
= 2.0 V
40
60
80
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
V
CC
= 0.9 V
V
CC
= 1.0 V
V
CC
= 1.5 V
V
CC
= 2.0 V
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
V
CC
= 0.9 V
V
CC
= 1.0 V
V
CC
= 1.5 V
V
CC
= 2.0 V
No sigual
V
CC
= 0.9 V
PC8103T,
PC8108T
15
--
PC8108T --
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 1.0 V
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
T
A
= +85 C
RF FREQUENCY vs. CONVERSION GAIN
0.1
0.3
0.5
1
V
CC
= 1.0 V
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
T
A
= +85 C
RF FREQUENCY vs. CONVERSION GAIN
0.1
0.3
0.5
1
V
CC
= 0.9 V
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
T
A
= +85 C
RF FREQUENCY vs. CONVERSION GAIN
0.1
0.3
0.5
1
V
CC
= 0.9 V
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
T
A
= +85 C
RF input frequency f
RFin
(GHz)
Conversion Gain CG (dB)
RF input frequency f
RFin
(GHz)
Conversion Gain CG (dB)
RF input frequency f
RFin
(GHz)
Conversion Gain CG (dB)
PC8103T,
PC8108T
16
--
PC8108T --
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 1.5 V
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
T
A
= +85 C
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 1.5 V
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
T
A
= +85 C
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 2.0 V
P
Loin
= 10 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
T
A
= +85 C
RF FREQUENCY vs. CONVERSION GAIN
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Conversion Gain CG (dB)
V
CC
= 2.0 V
P
Loin
= 21 dBm
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
T
A
= 40 C
T
A
= 20 C
T
A
= +25 C
T
A
= +85 C
PC8103T,
PC8108T
17
--
PC8108T --
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 0.9 V
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
25
f
RFin
= 450 MHz
f
RFin
= 150 MHz
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.0 V
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
25
f
RFin
= 450 MHz
f
RFin
= 150 MHz
f
RFin
= 280 MHz
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.5 V
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
25
f
RFin
= 450 MHz
f
RFin
= 150 MHz
f
RFin
= 280 MHz
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 2.0 V
P
RFin
= 35 dBm
f
IF
= 20 MHz
Upper local
35
30
25
20
15
10
5
0
25
f
RFin
= 450 MHz
f
RFin
= 150 MHz
f
RFin
= 280 MHz
f
RFin
= 900 MHz
f
RFin
= 280 MHz
f
RFin
= 900 MHz
f
RFin
= 900 MHz
f
RFin
= 900 MHz
PC8103T,
PC8108T
18
--
PC8108T --
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.0 V
f
RFin
= 280 MHz
P
RFin
= 35 dBm
f
Loin
= 170 MHz
25
T
A
= +25 C
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.0 V
f
RFin
= 150 MHz
P
RFin
= 35 dBm
f
Loin
= 170 MHz
25
T
A
= +25 C
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.0 V
f
RFin
= 450 MHz
P
RFin
= 35 dBm
f
Loin
= 470 MHz
25
T
A
= +25 C
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
Local input level vs. CONVERSION GAIN
Local input level P
Loin
(dBm)
30
20
15
10
Conversion Gain CG (dB)
V
CC
= 1.0 V
f
RFin
= 900 MHz
P
RFin
= 35 dBm
f
Loin
= 920 MHz
25
T
A
= +25 C
30
25
20
15
10
5
0
T
A
= +85 C
T
A
= 20 C
T
A
= 40 C
PC8103T,
PC8108T
19
--
PC8108T --
RF FREQUENCY vs. NOISE FIGURE
RF input frequency f
RFin
(GHz)
0.1
0.3
0.5
1
Noise Figure NF (dB)
P
Loin
= 21 dBm
f
IF
= 20 MHz
Upper local
20
15
10
5
0
V
CC
= 1.5 V
V
CC
= 1.0 V
RF FREQUENCY vs. NOISE FIGURE
0.1
0.3
0.5
1
P
Loin
= 10 dBm
f
IF
= 20 MHz
Upper local
20
15
10
5
0
V
CC
= 1.5 V
V
CC
= 1.5 V
V
CC
= 1.0 V
V
CC
= 1.0 V
RF input level vs. IF output level and IM
3
RF input level P
RFin
(dBm)
50
30
20
10
IF output level of each tone P
IF
(dBm)
3rd order intermodulation distortion IM
3
(dBm)
+10
0
10
20
30
40
50
60
40
IM
3
V
CC
= 1.0 V
f
Loin
= 170 MHz
P
Loin
= 21 dBm
f
RFin
(des)
= 150.000 MHz
f
RFin
(undes)
= 150.025 MHz
TEST CIRCUIT 1
IF
out
RF input level vs. IF output level and IM
3
50
30
20
10
+10
0
10
20
30
40
50
60
40
IM
3
V
CC
= 1.0 V
f
Loin
= 300 MHz
P
Loin
= 21 dBm
f
RFin
(des)
= 280.000 MHz
f
RFin
(undes) = 280.025 MHz
TEST CIRCUIT 1
IF
out
RF input frequency f
RFin
(GHz)
Noise Figure NF (dB)
RF input level P
RFin
(dBm)
IF output level of each tone P
IF
(dBm)
3rd order intermodulation distortion IM
3
(dBm)
PC8103T,
PC8108T
20
--
PC8108T --
RF input level vs. IF output level and IM
3
50
30
20
10
+10
0
10
20
30
40
50
60
40
IM
3
V
CC
= 1.0 V
f
Loin
= 950 MHz
P
Loin
= 21 dBm
f
RFin
(des) = 930.000 MHz
f
RFin
(undes)
= 930.025 MHz
TEST CIRCUIT 1
IF
out
RF input level vs. IF output level and IM
3
RF input level P
RFin
(dBm)
50
30
20
10
IF output level of each tone P
IF
(dBm)
3rd order intermodulation distortion IM
3
(dBm)
+10
0
10
20
30
40
50
60
40
IM
3
V
CC
= 1.0 V
f
Loin
= 470 MHz
P
Loin
= 21 dBm
f
RFin
(des)
= 450.000 MHz
f
RFin
(undes)
= 450.025 MHz
TEST CIRCUIT 1
IF
out
RF input level P
RFin
(dBm)
IF output level of each tone P
IF
(dBm)
3rd order intermodulation distortion IM
3
(dBm)
PC8103T,
PC8108T
21
Application circuit example (In the case of
PC8103T)
1 000 pF
V
CC
(1.05 V)
C2
C1
3
2
1
4
5
6
C2C
RF IN (173.94 MHz, 40 dBm)
Low impedance
R1
4.3 k
L1
56 nH
11 pF
C3
16 pF
C4
8 pF
150 nH (68+82 nH)
L2+L3
L4
C7
1 000 pF
150 H
C6
1 000 pF
C5
22 pF
R2
4.3 k
152.2400 MHz
(Overtone Xtal)
High impedance
IF OUT
21.7 MHz
(KSS 21.7-7A)
X'tal
BPF
ILLUSTRATION OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD
(EX-LO)
IF OUT
B
A
D
C
RF IN
A'
B'
C'
D'
IN
OUT
C7
C6
L2 L3
X'tal
BPF
PC8103T
8108T
SURFACE
BACKSIDE
C4
C5
C2
C3
L1
R1
R2
C1
L4
Note
(*1) 35
42
0.4 mm double copper clad polyimide board
(*2) Solder plated pattern
(*3) Surface vs. Backside : A - A', B - B', C - C', D - D'
(*4)
: Through holes
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
PC8103T,
PC8108T
22
-- With application circuit (
PC8103T) --
RF input level vs. IF output level
RF input level P
RFin
(dBm)
50
40
30
20
0
IF Output level P
IF
(dBm)
0
10
20
30
40
10
This measurement needs the calculation
as same as TEST CIRCUIT 1.
Spectrum of Overtone Oscillation (without RF signal)
100 MHz
RES BW 1 MHz
10 dB/
REF 0.0 dBm
ATTEN 10 dB
MKR 152.0 MHz
32.30 dBm
MARKER
152.0 MHz
32.30 dBm
CENTER
VBW 1 kHz
SPAN 200 MHz
SWP 1.00 sec
2
ref.
(desired
OSC freq.)
1 000 pF
Spectrum Analyzer (@ No RF signal)
ref.
5
4
PC8103T,
PC8108T
23
6 PIN MINI MOLD PACKAGE DIMENSIONS (Unit : mm)
1
2
3
6
5
4
0.95
0.95
1.9
2.90.2
1.1
+0.2
0.1
0.8
0 to 0.1
0.130.1
0.3
+0.1
0.05
2.8
+0.2
0.3
1.5
+0.2
0.1
PC8103T,
PC8108T
24
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to maintain the minimum ground impedance (to prevent
undesired oscillation).
(3) Keep the wiring length of the ground pins as short as possible.
(4) Connect a bypass capacitor (eg 1 000 pF) to the Vcc pin.
(5) Insert the inductor (eg L = 150
H) between 5 and 6 pins.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods
and conditions than the recommended conditions are to be consulted with our sales representatives.
PC8103T,
PC8108T
Note
It is the storage days after opening a dry pack, the storage conditions are 25 C, less than 65 % RH.
Caution
The combined use of soldering method is to be avoided (However, except the pin area heating
method).
For details of recommended soldering conditions for surface mounting, refer to information
document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (IEI-1207)
Soldering conditions
Package peak temperature: 235 C, Hour: within 30 s. (more than 210 C),
Time: 2 time, Limited days: no.
Note
Package peak temperature: 215 C, Hour: within 40 s. (more than 200 C),
Time: 2 time, Limited days: no.
Note
Soldering tub temperature: less than 260 C, Hour: within 10 s.
Time: 1 time, Limited days: no.
Note
Pin area temperature: less than 300 C, Hour: within 10 s.
Limited days: no.
Note
Recommended
condition symbol
IR35-00-2
VP15-00-2
WS60-00-1
Soldering process
Infrared ray reflow
VPS
Wave soldering
Pin part heating
PC8103T,
PC8108T
25
[MEMO]
PC8103T,
PC8108T
16
[MEMO]
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11