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Электронный компонент: UPD168302

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2003
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS INTEGRATED CIRCUIT






PD168302
MONOLITHIC 2CH H-BRIDGE DRIVER
DATA SHEET
Document No. S16402EJ1V0DS00 (1st edition)
Date Published May 2003 NS CP (K)
Printed in Japan
DESCRIPTION
The
PD168302 is monolithic dual H-bridge driver LSI which uses power MOS FETs in the output stages. By using
the MOS process, this driver has substantially improved the voltage loss of the output stage and power consumption
as compared with conventional driver using bipolar transistors.
As the package, a 24-pin plastic TSSOP is adopted to enable the creation of compact, slim application sets.
It is provided with forward/reverse and brake functions and is ideal as a driver for DC motor and stepping motor.
FEATURES
2ch H-Bridge circuit employing power MOS FETs
Charge-pump circuit for low-voltage operation
Low output FET on resistance: 1.0
TYP. 2.0
MAX. (Sum of upper and lower side)
Output current: DC current 0.6 A/ch
Peak current 1.0 A/ch
Input logic frequency: 100 kHz
5 V logic power supply: Minimum operating supply voltage 4.0 V
0.9 to 3.6 V power supply for motor drive
Under voltage locked out circuit: shutdown internal circuit at V
DD
= 1.7 V TYP.
24-pin plastic TSSOP (5.72 mm (225), 0.5 mm pitch)
ORDERING INFORMATION
Part Number
Package
PD168302MA-6A5
24-pin plastic TSSOP (5.72 mm (225))
Data Sheet S16402EJ1V0DS
2



PD168302
1. BLOCK DIAGRAM
Oscillator
Circuit
Charge-pump
Circuit
Level Shift
Circuit
MOS
H-bridge
Circuit 1
MOS
H-bridge
Circuit 2
Level Shift
Circuit
BGR
Circuit
Control
Circuit
Control
Circuit
V
DD
V
G
V
M
Note3
V
M1
Note3
V
M2
Note3
OUT1A
OUT1B
OUT2A
OUT2B
C
1H
C
1L
C
2H
C
2L
LGND
/STB
Note2
IN1
Note2
IN2
Note2
IN3
Note2
IN4
Note2
UVLO
PGND1
Note1, 4
PGND2
Note1, 4
Notes 1. The terminal which has more than one should connect not only one terminal but all terminals.
2. Pull down resistance (50 to 200 k
) is connected to the input terminal.
3. It is recommended that V
M
terminal is connected to the terminal which either V
M1
or V
M2
is higher.
4. It is recommended that the voltage of PGND1 and PGND2 is not lower value than GND.
Data Sheet S16402EJ1V0DS
3



PD168302
2. PIN CONNECTION
C
1L
C
1H
V
G
V
DD
PGND1
OUT1A
V
M1
OUT1B
PGND1
/STB
IN1
IN2
C
2L
C
2H
V
M
LGND
PGND2
OUT2A
V
M2
OUT2B
PGND2
N.C.
IN3
IN4
1
24
2
3
4
5
6
7
8
9
10
11
12
23
22
21
20
19
18
17
16
15
14
13
3. PIN FUNCTIONS
PACKAGE: 24-pin plastic TSSOP (5.72 mm (225), 0.5 mm pitch)
Pin No.
Pin Name
Pin Function
1
C
1L
Capacitor connect pin for charge-pump circuit
2
C
1H
Capacitor connect pin for charge-pump circuit
3
V
G
Gate voltage pin
4
V
DD
Power supply pin for logic circuit
5
PGND1
Power GND pin
6
OUT1A
Output A pin for ch1
7
V
M1
Power supply pin for power circuit
8
OUT1B
Output B pin for ch1
9
PGND1
Power GND pin
10
/STB
Standby pin
11
IN1
Input logic 1 pin for ch1
12
IN2
Input logic 2 pin for ch1
13
IN4
Input logic 4 pin for ch2
14
IN3
Input logic 3 pin for ch2
15
N.C.
(No connect)
16
PGND2
Power GND pin
17
OUT2B
Output B pin for ch2
18
V
M2
Power supply pin for power circuit
19
OUT2A
Output A pin for ch2
20
PGND2
Power GND pin
21
LGND
Logic GND pin
22
V
M
Power supply pin for power circuit
23
C
2L
Capacitor connect pin for charge-pump circuit
24
C
2H
Capacitor connect pin for charge-pump circuit
Cautions 1. The terminal which has more than one should connect not only one terminal but terminals.
2. Please recommend connecting unused pins to GND.
Data Sheet S16402EJ1V0DS
4



PD168302
4.
APPLICATION EXAMPLE
OUT1A
OUT1B
OUT2A
OUT2B
PGND2
PGND1
LGND
Controller
/STB
IN1
IN2
IN3
UVLO
Oscillator
Circuit
BGR
Circuit
Control
Circuit
Charge-pump
Circuit
Level Shift
Circuit
MOS
H-bridge
Circuit 1
MOS
H-bridge
Circuit 2
Level Shift
Circuit
Control
Circuit
IN4
C
1H
C
1
C
2
C
3
C
1L
C
2H
C
2L
V
G
V
M
V
M1
V
M2
V
DD
M 1
M 2
Remark This circuit diagram is an example of connection, and is not a thing aiming at mass production.
Data Sheet S16402EJ1V0DS
5



PD168302
5. FUNCTION TABLE
Input
Output
IN1
IN2
/STB
OUT1A
OUT1B
Current direction
L
L
H
Hi-Z
Hi-Z
Stop
H
L
H
H
L
OUT1A
OUT1B
(Forward)
L
H
H
L
H
OUT1B
OUT1A
(Reverse)
H
H
H
L
L
Brake
(Regeneration mode)
x
x
L
Hi-Z
Hi-Z
All output stop mode
(Standby)
Input
Output
IN3
IN4
/STB
OUT2A
OUT2B
Current direction
L
L
H
Hi-Z
Hi-Z
Stop
H
L
H
H
L
OUT1A
OUT1B
(Forward)
L
H
H
L
H
OUT1B
OUT1A
(Reverse)
H
H
H
L
L
Brake
(Regeneration mode)
x
x
L
Hi-Z
Hi-Z
All output stop mode
(Standby)
Remark H: High-level, L: Low-level, Hi-Z: High impedance
Data Sheet S16402EJ1V0DS
6



PD168302
6. H-BRIDGE OPERATION FIGURE
LOAD
Forward
A
B
V
M
V
M
V
M
V
M
GND
ON
ON
OFF
OFF
LOAD
Reverse
A
B
GND
GND
GND
ON
ON
OFF
OFF
LOAD
Stop
A
B
OFF
OFF
OFF
OFF
LOAD
Brake
A
B
ON
OFF
ON
OFF
Data Sheet S16402EJ1V0DS
7



PD168302
7. ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS (T
A
= 25



C. When mounted on a glass epoxy board (100 mm x 100 mm x 1 mm,
15% copper foil))
Parameter
Symbol
Condition
Rating
Unit
V
DD
Logic
-
0.5 to +6.0
V
Power Supply
V
M
Motor
-
0.5 to +4.0
V
V
G
Voltage
V
G
-
0.5 to +8.0
V
Input Voltage
V
IN
-
0.5 to V
DD
+ 0.5
V
Output Voltage
V
OUT
Motor
6.2
V
DC Output Current
I
D(DC)
DC
0.6
A/ch
Peak Output Current
I
D(pulse)
PW < 10 ms, Duty
20%
1.0
A/ch
Power consumption
P
T
0.7
W
Peak junction temperature
T
ch(MAX.)
150
C
Storage temperature
T
stg
-
55 to +150
C
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure
that the absolute maximum ratings are not exceeded.
RECOMMENDED OPERATING CONDITIONS (T
A
= 25C. When mounted on a glass epoxy board (100 mm x 100
mm x 1 mm, 15% copper foil))
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
V
DD
Logic
4.0
5.5
V
Power Supply
V
M
Motor
0.9
3.6
V
V
G
Voltage
Note
V
G
V
M
+ 3.5
7.5
V
Input Voltage
V
IN
0
V
DD
V
DC Output Current
I
D(DC)
DC
-
0.3
+0.3
A/ch
Peak Output Current
I
D(pulse)
PW < 10 ms, Duty
20%
-
0.7
+0.7
A/ch
Logic input frequency
f
IN
100
kHz
Capacitor for charge-pump
C
1
to C
3
0.008
0.01
0.012
F
Operating temperature
T
A
0
70
C
Note When using charge-pump circuit, the voltage occurs internally at V
G
-pin (V
M
+ 3.5 V (TYP.)).
Data Sheet S16402EJ1V0DS
8



PD168302
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, T
A
= 25
C, V
DD
= 5 V, V
M
= 5.5 V)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
V
DD
current at standby
I
DD
(STB)
/STB = L
1.0
A
V
DD
current at operating
I
DD
(ACT)
1.0
mA
High-level Input current
I
IH
V
IN
= V
DD
100
A
Low-level Input current
I
IL
V
IN
= 0 V
-
1.0
A
Input pull-down resistance
R
IND
50
200
k
High-level Input voltage
V
IH
4.0 V
V
DD
5.5 V
0.7 x V
DD
V
Low-level Input voltage
V
IL
4.0 V
V
DD
5.5 V
0.3 x V
DD
V
On resistance H-Bridge
R
on
I
M
= 0.3 A, Sum of upper and lower
1.0
2.0
Output Leak current
I
M(off)
Per V
M
pin
All control-pin = L
(V
M
= Recommenred range MAX.)
1.0
A
low-voltage detected voltage
V
DDS
1.7
2.5
V
turn-ON time at charge-pump
t
ONC
1.0
ms
Output turn-ON time
t
on
0.1
5.0
s
Output turn-OFF time
t
off
C
1
= C
2
= C
3
= 0.01
F
I
M
= 0.3 A, refer to Figure 1, 2
0.1
5.0
s
Figure 1. Charge-pump circuit operating wave
t
ONC
STB
50%
90%
V
G
V
M
+ 3.5 V (reference)
Figure 2. Switching Wave
t
on
IN
50%
50%
50%
50%
t
off
I
M
Data Sheet S16402EJ1V0DS
9



PD168302
8. PACKAGE DRAWING
S
24-PIN PLASTIC TSSOP (5.72 mm (225))
NOTE
Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
ITEM
MILLIMETERS
A
A'
C
D
6.65
0.10
6.5
0.1
0.1
0.05
F
0.5 (T.P.)
G
B
0.575
E
0.22
0.05
1.2 MAX.
H
1.0
0.05
I
6.4
0.1
J
4.4
0.1
K
0.17
0.025
L
0.5
M
0.10
N
0.08
R
0.25
1.0
0.1
S
0.6
0.15
P24MA-50-6A5
P
3
+
5
-
3
24
13
1
12
M
S
N
K
F
G
L
R
S
E
P
J
D
M
C
A
B
A'
H
I
detail of lead end
Data Sheet S16402EJ1V0DS
10



PD168302
9. RECOMMENDED SOLDERING CONDITIONS
The
PD168302 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales
representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
PD168302MA-6A5: 24-pin plastic TSSOP (5.72 mm (225))
Soldering Method
Soldering Conditions
Recommended
Condition
symbol
Infrared reflow
Package peak temperature: 260C, Time: 60 seconds MAX. (at 220C or
higher), Count: Three times or less, Exposure limit: None, Flux: Rosin flux with
low chlorine (0.2 Wt% or below) recommended
IR60-00-3
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet S16402EJ1V0DS
11



PD168302
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V
DD
or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.



PD168302
Reference Documents
NEC Semiconductor Device Reliability/Quality Control System (C10983E)
Quality Grades On NEC Semiconductor Devices (C11531E)
The information in this document is current as of May, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
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(Note)
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
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"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
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Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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"Standard":
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"Specific":