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Электронный компонент: UPD78P9014

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1996
DATA SHEET
MOS INTEGRATED CIRCUIT
m
PD75P4308
The
m
PD75P4308 replaces the
m
PD754304's internal mask ROM with a one-time PROM and features expanded
ROM capacity.
Because the
m
PD75P4308 supports programming by users, it is suitable for use in prototype testing for system
development using the
m
PD754302 and 754304 products, and for use in small-lot production.
Detailed descriptions of functions are provided in the following document. Be sure to read the document
before designing.
m
PD754304 User's Manual: U10123E
FEATURES
Compatible with
m
PD754304
Memory capacity:
PROM : 8192
8 bits
RAM
: 256
4 bits
Can operate in the same power supply voltage as the mask version
m
PD754304
V
DD
= 1.8 to 5.5 V
Adopts a compact shrink SOP package
ORDERING INFORMATION
Part Number
Package
m
PD75P4308GS
36-pin plastic shrink SOP (300 mil, 0.8 mm pitch)
Caution On-chip pull-up resistors by mask option are not provided.
4-BIT SINGLE-CHIP MICROCONTROLLER
The information in this document is subject to change without notice.
Document No. U10909EJ2V0DS00 (2nd edition)
Date Published January 1997 N
Printed in Japan
The mark
shows major revised points.
m
PD75P4308
2
OVERVIEW OF FUNCTIONS
Item Function
Instruction execution time 0.95, 1.91, 3.81, or 15.3
m
s (system clock: @ 4.19 MHz)
0.67, 1.33, 2.67, or 10.7
m
s (system clock: @ 6.0 MHz)
Internal memory PROM 8192
8 bits
RAM 256
4 bits
General-purpose register 4-bit manipulation: 8 registers
4 banks
8-bit manipulation: 4 registers
8 banks
I/O ports CMOS input 8 Connection of on-chip pull-up resistors can be specified by software: 7
CMOS I/O 18 Connection of on-chip pull-up resistors can be specified by software: 18
N-ch open-drain I/O 4 13-V withstand voltage
Total 30
Timers 3 channels
8-bit timer/event counter: 2 channels
(Can be used as a 16-bit timer/event counter)
8-bit basic interval timer/watchdog timer: 1 channel
Serial interface 3-wire serial I/O mode ... MSB/LSB-first switchable
2-wire serial I/O mode
Bit sequential buffer 16 bits
Clock output (PCL)
F
, 524, 262, 65.5 kHz (system clock: @ 4.19 MHz)
F
, 750, 375, 93.8 kHz (system clock: @ 6.0 MHz)
Vectored interrupts External: 3, Internal: 4
Test input External: 1
System clock oscillator Ceramic/crystal oscillator
Standby functions STOP mode/HALT mode
Operating ambient temperature T
A
= 40 to +85C
Power supply voltage V
DD
= 1.8 to 5.5 V
Package 36-pin plastic shrink SOP (300 mil, 0.8 mm pitch)
m
PD75P4308
3
CONTENTS
1.
PIN CONFIGURATION (Top View) ................................................................................................... 4
2.
BLOCK DIAGRAM ............................................................................................................................. 5
3.
PIN FUNCTIONS ................................................................................................................................ 6
3.1
Port Pins ........................................................................................................................................................ 6
3.2
Non-port Pins ................................................................................................................................................ 8
3.3
Pin I/O Circuits .............................................................................................................................................. 9
3.4
Recommended Connection of Unused Pins ............................................................................................. 11
4.
SWITCHING FUNCTION BETWEEN Mk I MODE AND Mk II MODE ........................................ 12
4.1
Differences between Mk I Mode and Mk II Mode ..................................................................................... 12
4.2
Setting of Stack Bank Selection (SBS) Register ..................................................................................... 13
5.
DIFFERENCES BETWEEN
m
m
m
m
m
PD75P4308 AND
m
m
m
m
m
PD754302, 754304 ......................................... 14
6.
MEMORY CONFIGURATION ........................................................................................................... 15
7.
INSTRUCTION SET ......................................................................................................................... 17
8.
ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY .............................................. 28
8.1
Operation Modes for Program Memory Write/Verify ............................................................................... 28
8.2
Program Memory Write Procedure ........................................................................................................... 29
8.3
Program Memory Read Procedure ........................................................................................................... 30
8.4
One-Time PROM Screening ....................................................................................................................... 31
9.
ELECTRICAL SPECIFICATIONS .................................................................................................... 32
10. CHARACTERISTIC CURVES (FOR REFERENCE ONLY) ........................................................... 45
11. PACKAGE DRAWINGS .................................................................................................................... 47
12. RECOMMENDED SOLDERING CONDITIONS .............................................................................. 48
APPENDIX A. COMPARISON OF
m
m
m
m
m
PD750004, 754304, AND 75P4308 FUNCTIONS ..................... 49
APPENDIX B. DEVELOPMENT TOOLS ............................................................................................... 51
APPENDIX C. RELATED DOCUMENTS ............................................................................................... 55
m
PD75P4308
4
1. PIN CONFIGURATION (Top View)
36-pin plastic shrink SOP (300 mil, 0.8 mm pitch)
m
PD75P4308GS
Vss
1
36
X1
2
P51/D5
35
RESET
3
P52/D6
34
4
P53/D7
33
5
P60/KR0/D0
32
P33/MD3
6
31
P32/MD2
7
30
P31/MD1
8
29
P30/MD0
9
28
P81
10
27
P80
11
P61/KR1/D1
26
P22/PCL
12
P62/KR2/D2
25
P21/PTO1
13
P63/KR3/D3
24
P20/PTO0
14
P70/KR4
23
P03/SI
15
P71/KR5
22
P02/SO/SB0
16
P72/KR6
21
P01/SCK
17
P73/KR7
20
P00/INT4
18
P13/TI0/TI1
19
X2
P23
P50/D4
P12/INT2
P11/INT1
P10/INT0
V
DD
V
PP
Note
Note Connect V
PP
directly to V
DD
during normal operations.
PIN IDENTIFICATIONS
P00 to P03
: Port0
SI
: Serial Input
P10 to P13
: Port1
SO
: Serial Output
P20 to P23
: Port2
SB0
: Serial Bus 0
P30 to P33
: Port3
RESET
: Reset
P50 to P53
: Port5
TI0, 1
: Timer Input 0, 1
P60 to P63
: Port6
PTO0, 1
: Programmable Timer Output 0, 1
P70 to P73
: Port7
PCL
: Programmable Clock
P80, P81
: Port8
INT0, 1, 4
: External Vectored Interrupt 0, 1, 4
KR0 to KR7
: Key Return 0 to 7
INT2
: External Test Input 2
V
DD
: Positive Power Supply
X1, 2
: System Clock Oscillation 1, 2
V
SS
: GND
MD0 to 3
: Mode Selection 0 to 3
V
PP
: Programming Power Supply
D0 to D7
: Data Bus 0 to 7
SCK
: Serial Clock
m
PD75P4308
5
2. BLOCK DIAGRAM
BIT SEQ.
BUFFER (16)
PORT0
P00-P03
4
PORT1
PORT2
4
PORT3
P30/MD0-
P33/MD3
4
PORT5
P50/D4-
P53/D7
4
PORT6
P60/KR0/D0-
P63/KR3/D3
4
Vss
V
DD
RESET
V
PP
CPU CLOCK
STAND BY
CONTROL
X2
X1
CLOCK
GENERATOR
CLOCK
DIVIDER
CLOCK
OUTPUT
CONTROL
fx/2
N
PCL/P22
GENERAL
REG.
RAM
DATA
MEMORY
256
4 BITS
BANK
SP (8)
CY
ALU
PROGRAM
COUNTER
PROM
PROGRAM
MEMORY
8192
8 BITS
DECODE
AND
CONTROL
BASIC
INTERVAL
TIMER/
WATCHDOG
TIMER
TI0/TI1/P13
INTBT
PTO0/P20
INTT1
CLOCKED
SERIAL
INTERFACE
SI/P03
INTERRUPT
CONTROL
INT0/P10
SO/SB0/P02
SCK/P01
INT1/P11
INT2/P12
INT4/P00
KR0/P60/D0-
KR3/P63/D3
KR4/P70-
KR7/P73
8
PORT7
P70-P73
4
PORT8
P80, P81
2
P10-P13
4
P20-P23
INTCSI
CASCADED
16-BIT
TIMER/
EVENT
COUNTER
8-BIT
TIMER/EVENT
COUNTER#0
8-BIT
TIMER/EVENT
COUNTER#1
INTT0
TOUT0
TOUT0
SBS
4
4
4
4
4
4
4
2
PTO1/P21
m
PD75P4308
6
3. PIN FUNCTIONS
3.1 Port Pins (1/2)
Pin name
I/O
Alternate
Function
8-bit
After
I/O Circuit
function
I/O
reset
type
Note 1
P00
Input
INT4
No
Input
<B>
P01
I/O
SCK
<F>-A
P02
I/O
SO/SB0
<F>-B
P03
Input
SI
<B>-C
P10
Input
INT0
No
Input
<B>-C
P11
INT1
P12
INT2
P13
TI0/TI1
P20
I/O
PTO0
No
Input
E-B
P21
PTO1
P22
PCL
P23
--
P30
I/O
MD0
No
Input
E-B
P31
MD1
P32
MD2
P33
MD3
P50
Note 2
I/O
D4
No
High-
M-E
P51
Note 2
D5
impedance
P52
Note 2
D6
P53
Note 2
D7
Notes 1. Circuit types in brackets indicate Schmitt trigger input.
2. Low-level input leakage current increases when input instructions or bit manipulation instructions are
executed.
4-bit I/O port (PORT2).
Connections of on-chip pull-up resistors are
software-specifiable in 4-bit units.
4-bit input port (PORT1).
Connections of on-chip pull-up resistors are
software-specifiable in 4-bit units.
Noise elimination circuit can be selected
only for P10/INT0.
N-ch open-drain 4-bit input/output port
(PORT5).
13-V withstand during open-drain.
Data input/output pin for program memory
(PROM) write/verify (upper 4 bits).
Programmable 4-bit I/O port (PORT3).
Input and output can be specified in single-
bit units.
Connections of on-chip pull-up resistors are
software-specifiable in 4-bit units.
4-bit input port (PORT0).
For P01 to P03, connections of on-chip pull-
up resistors are software-specificable in 3-
bit units.
m
PD75P4308
7
3.1 Port Pins (2/2)
Pin name
I/O
Alternate
Function
8-bit
After
I/O Circuit
function
I/O
reset
type
Note
P60
I/O
KR0/D0
Yes
Input
<F>-A
P61
KR1/D1
P62
KR2/D2
P63
KR3/D3
P70
I/O
KR4
Input
<F>-A
P71
KR5
P72
KR6
P73
KR7
P80
I/O
--
No
Input
E-B
P81
--
Note Circuit types in brackets indicate the Schmitt trigger input.
4-bit I/O port (PORT7).
Connections of on-chip pull-up resistors are
software-specifiable in 4-bit units.
2-bit I/O port (PORT8).
Connections of on-chip pull-up resistors are
software-specifiable in 2-bit units.
Programmable 4-bit I/O port (PORT6).
Input and output can be specified in single-bit
units. Connections of on-chip pull-up resistors
are software-specifiable in 4-bit units.
Data input/output pin for program memory
(PROM) write/verify (lower 4 bits).
m
PD75P4308
8
External event pulse input to timer/event counter
Timer/event counter output
Clock output
Serial clock I/O
Serial data output
Serial data bus I/O
Serial data input
Edge-triggered vectored interrupt input
(triggered by both rising and falling edges).
3.2 Non-port Pins
Pin name
I/O
Alternate
Function
After
I/O Circuit
function
reset
type
Note 1
TI0/TI1
Input
P13
Input
<B>-C
PTO0
Output
P20
Input
E-B
PTO1
P21
PCL
P22
SCK
I/O
P01
Input
<F>-A
SO/SB0
P02
<F>-B
SI
Input
P03
<B>-C
INT4
P00
--
<B>
INT0
Input
P10
--
<B>-C
INT1
P11
INT2
P12
KR0 to KR3
Input
P60/D0 to
Input
<F>-A
P63/D3
KR4 to KR7
P70 to P73
X1
Input
--
--
--
X2
--
RESET
Input
--
--
<B>
MD0 to MD3
Input
P30 to P33
Input
E-B
D0 to D3
I/O
P60/KR0 to
Input
<F>-A
P63/KR3
D4 to D7
P50 to P53
M-E
V
PP
Note 2
--
--
--
--
V
DD
--
--
--
--
V
SS
--
--
--
--
Notes 1. Circuit types in brackets indicate Schmitt trigger input.
2. During normal operation, the V
PP
pin will not operate normally unless connected to V
DD
pin.
Noise elimination
circuit appended/
asynchronous
selectable
Edge-triggered vectored interrupt
input (detected edge is selectable).
Noise elimination circuit selectable
in INT0/P10.
Asynchronous
Asynchronous
Rising edge-triggered test input
Falling edge-triggered testable input
Ceramic/crystal connection for system clock oscillation.
If using an external clock, input it to X1 and input the
inverted clock to X2.
System reset input
Mode selection for program memory (PROM) write/
verify.
Data bus pin for program memory (PROM) write/verify.
Program supply voltage in program memory (PROM)
write/verify mode.
In normal operation mode, connect directly to V
DD
.
Apply +12.5 V in PROM write/verify mode.
Positive power supply
Ground
m
PD75P4308
9
3.3 Pin I/O Circuits
The equivalent circuits for the
m
PD75P4308's pin are shown in simplified schematic diagrams below.
(1/2)
IN
V
DD
P-ch
N-ch
V
DD
P-ch
N-ch
OUT
Data
Output
disable
IN
V
DD
P-ch
IN/OUT
P.U.R.
enable
Data
P.U.R.
Type D
Output
disable
P.U.R.: Pull-Up Resistor
Type A
V
DD
P-ch
P.U.R.
enable
P.U.R.
P.U.R. : Pull-Up Resistor
IN
V
DD
P-ch
IN/OUT
P.U.R.
enable
Data
P.U.R.
Type D
Output
disable
P.U.R.: Pull-Up Resistor
Type B
CMOS standard input buffer
Push-pull output that can be set to high impedance output
(with both P-ch and N-ch OFF).
Schmitt trigger input with hysteresis characteristics.
TYPE A
TYPE D
TYPE E-B
TYPE B
TYPE B-C
TYPE F-A
Schmitt trigger input with hysteresis characteristics.
m
PD75P4308
1 0
(2/2)
TYPE F-B
Output
disable
V
DD
P-ch
N-ch
IN/OUT
Data
V
DD
P-ch
P.U.R.
enable
P.U.R.
Output
disable
(N)
Output
disable
(P)
P.U.R.: Pull-Up Resistor
TYPE M-E
N-ch
(+13 V
withstand
voltage)
IN/OUT
P-ch
V
DD
Note Pull-up resistor that operates only when an input
instruction has been executed (current flows
from V
DD
to the pin when the pin is low).
data
output
disable
Input
instruction
(+13 V
withstand
voltage)
P.U.R.
Note
Voltage
limitation
circuit
m
PD75P4308
1 1
3.4 Recommended Connection of Unused Pins
Pin
Recommended connection
P00/INT4
Connect to V
SS
or V
DD
.
P01/SCK
Connect individually to V
SS
or V
DD
via a resistor.
P02/SO/SB0
P03/SI
Connecto to V
SS
.
P10/INT0 to P12/INT2
Connect to V
SS
or V
DD
.
P13/TI0/TI1
P20/PTO0
Input mode : connect individually to V
SS
or V
DD
P21/PTO1
via a resistor.
P22/PCL
Output mode: open
P23
P30/MD0 to P33/MD3
P50 to P53
Connect to V
SS
.
P60/KR0 to P63/KR3
Input mode : connect individually to V
SS
or V
DD
P70/KR4 to P73/KR7
via a resistor.
P80, P81
Output mode: open
V
PP
Be sure to connect directly to V
DD
.
m
PD75P4308
1 2
4. SWITCHING FUNCTION BETWEEN Mk I MODE AND Mk II MODE
Setting a stack bank selection (SBS) register for the
m
PD75P4308 enables the program memory to be switched
between the Mk I mode and the Mk II mode. This capability enables the evaluation of the
m
PD754302 or 754304 using
the
m
PD75P4308.
When the SBS bit 3 is set to 1: sets Mk I mode (corresponds to Mk I mode of
m
PD754302 and 754304)
When the SBS bit 3 is set to 0: sets Mk II mode (corresponds to Mk II mode of
m
PD754302 and 754304)
4.1 Differences between Mk I Mode and Mk II Mode
Table 4-1 lists the differences between the Mk I mode and the Mk II mode of the
m
PD75P4308.
Table 4-1. Differences between Mk I Mode and Mk II Mode
Item
Mk I Mode
Mk II Mode
Program counter
PC
12-0
Program memory (bytes)
8192
Data memory (bits)
256
4
Stack
Stack bank
Memory bank 0
Stack bytes
2 bytes
3 bytes
Instruction
BRA !addr1
Not provided
Provided
CALLA !addr1
Instruction
CALL !addr
3 machine cycles
4 machine cycles
execution time CALLF !faddr
2 machine cycles
3 machine cycles
Supported mask ROM versions
Mk I mode of
m
PD754302 and 754304
Mk II mode of
m
PD754302 and 754304
Caution The Mk II mode supports 16 Kbytes or more of program area in the 75X and 75XL Series. This
mode allows the software compatibility with 16-Kbyte or more versions to be improved.
Compared with the Mk I mode, selecting the Mk II mode increases the stack bytes by one during
execution of the subroutine call instruction. When a CALL !addr or CALLF !faddr instruction is
used, the instruction execution time increases by one machine cycle. Therefore, if RAM efficiency
or throughput is more important than software compatibility, use the Mk I mode.
m
PD75P4308
1 3
4.2 Setting of Stack Bank Selection (SBS) Register
Use the stack bank selection register to switch between the Mk I mode and the Mk II mode. Figure 4-1 shows the
format for doing this.
The stack bank selection register is set using a 4-bit memory manipulation instruction. When using the Mk I mode,
be sure to initialize the stack bank selection register to 1000B at the beginning of the program. When using the Mk
II mode, be sure to initialize it to 0000B.
Figure 4-1. Format of Stack Bank Selection Register
SBS3 SBS2 SBS1 SBS0
F84H
Address
3
2
1
0
SBS
0
0
Symbol
Stack area specification
Memory bank 0
0
Be sure to enter "0" for bit 2.
0
1
Mk II mode
Mk I mode
Mode selection specification
Setting prohibited other than above
Cautions 1. SBS3 is set to "1" after RESET input, and consequently the CPU operates in the Mk I mode.
When using instructions for the Mk II mode, set SBS3 to "0" to enter the Mk II mode before
using the instructions.
2. When using the Mk II mode, execute a subroutine call instruction and an interrupt instruction
after RESET input and after setting the stack bank selection register.
m
PD75P4308
1 4
5. DIFFERENCES BETWEEN
m
PD75P4308 AND
m
PD754302, 754304
The
m
PD75P4308 replaces the internal mask ROM in the
m
PD754302 and 754304 with a one-time PROM and
features expanded ROM capacity. The
m
PD75P4308's Mk I mode supports the Mk I mode in the
m
PD754302 and
754304 and the
m
PD75P4308's Mk II mode supports the Mk II mode in the
m
PD754302 and 754304.
Table 5-1 lists differences among the
m
PD75P4308 and the
m
PD754302 and 754304. Be sure to check the
differences between corresponding versions beforehand, especially when a PROM version is used for debugging or
prototype testing of application systems and later the corresponding mask ROM version is used for full-scale
production.
For details of CPU functions and incorporated hardware, refer to
m
PD754304 User's Manual (U10123E).
Table 5-1. Differences between
m
PD75P4308 and
m
PD754302, 754304
Item
m
PD754302
m
PD754304
m
PD75P4308
Program counter
11-bit
12-bit
13-bit
Program memory (bytes)
Mask ROM
Mask ROM
One-time PROM
2048
4096
8192
Data memory (
4 bits)
256
Mask options
Pull-up resistor for
Yes (On-chip/not on-chip specifiable)
No (On-chip not possible)
PORT5
Wait time in
Yes (Selectable from 2
17
/f
X
and 2
15
/f
X
)
Note
No (fixed at 2
15
/f
X
)
Note
RESET state
Pin configuration
Pins 5 to 8
P33-P30
P33/MD3-P30/MD0
Pin 19
IC
V
PP
Pins 29 to 32
P63/KR3-P60/KR0
P63/KR3/D3-
P60/KR0/D0
Pins 33 to 36
P53-P50
P53/D7-P50/D4
Other
Noise resistance and noise radiation may differ due to the different circuit
complexities and mask layouts.
Note 2
17
/f
X
: 21.8 ms @6.0-MHz operation, 31.3 ms @4.19-MHz operation.
2
15
/f
X
: 5.46 ms @6.0-MHz operation, 7.81 ms @4.19-MHz operation.
Caution Noise resistance and noise radiation are different in PROM version and mask ROM versions. If
using a mask ROM version instead of the PROM version for processes between prototype
development and full production, be sure to fully evaluate the CS (not ES) of the mask ROM
version.
m
PD75P4308
1 5
6. MEMORY CONFIGURATION
Figure 6-1. Program Memory Map
MBE
MBE
MBE
MBE
MBE
MBE
MBE
RBE
RBE
RBE
RBE
RBE
RBE
RBE
0
0
0
0
0
0
0
Internal reset start address (upper 5 bits)
Internal reset start address (lower 8 bits)
INTBT/INT4 start address (upper 5 bits)
INTBT/INT4 start address (lower 8 bits)
INT0 start address (upper 5 bits)
INT0 start address (lower 8 bits)
INT1 start address (upper 5 bits)
INT1 start address (lower 8 bits)
INTCSI start address (upper 5 bits)
INTCSI start address (lower 8 bits)
INTT0 start address (upper 5 bits)
INTT0 start address (lower 8 bits)
INTT1 start address (upper 5 bits)
INTT1 start address (lower 8 bits)
Reference table for GETI instruction
0000H
0002H
0004H
0006H
0008H
000AH
000CH
007FH
0080H
07FFH
0800H
0FFFH
1000H
1FFFH
CALLF
!faddr instruction
entry address
Branch address for
the following instructions
Branch/call
address
by GETI
BR $addr instruction
relative branch address
(15 to 1,
+2 to +16)
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
7
6
5
0
BR BCDE
BR BCXA
BR !addr
CALL !addr
BRA !addr1
CALLA !addr1
Note
Note
0020H
Note Can be used only in the Mk II mode.
Remark For instructions other than those noted above, the "BR PCDE" and "BR PCXA" instructions can be used
to branch to addresses with changes in the PC's lower 8 bits only.
m
PD75P4308
1 6
Figure 6-2. Data Memory Map
(32
4)
256
4
(224
4)
128
4
0
15
000H
01FH
020H
0FFH
F80H
FFFH
General
register
area
Data area
static RAM
(256
4)
Stack area
Peripheral hardware area
Data memory
Memory bank
Not incorporated
m
PD75P4308
1 7
7. INSTRUCTION SET
(1) Representation and coding formats for operands
In the instruction's operand area, use the following coding format to describe operands corresponding to the
instruction's operand representations (for further description, refer to RA75X Assembler Package User's
Manual Language (EEU-1363)). When there are several codes, select and use just one. Uppercase letters,
and + and symbols are key words that should be entered as they are.
For immediate data, enter an appropriate numerical value or label.
Instead of mem, fmem, pmem, bit, etc., a register flag symbol can be described as a label descriptor (for details,
refer to
m
PD754304 User's Manual (U10123E)). Labels that can be entered for fmem and pmem are restricted.
Representation
Coding format
reg
X, A, B, C, D, E, H, L
reg1
X, B, C, D, E, H, L
rp
XA, BC, DE, HL
rp1
BC, DE, HL
rp2
BC, DE
rp'
XA, BC, DE, HL, XA', BC', DE', HL'
rp'1
BC, DE, HL, XA', BC', DE', HL'
rpa
HL, HL+, HL, DE, DL
rpa1
DE, DL
n4
4-bit immediate data or label
n8
8-bit immediate data or label
mem
8-bit immediate data or label
Note
bit
2-bit immediate data or label
fmem
FB0H-FBFH, FF0H-FFFH immediate data or label
pmem
FC0H-FFFH immediate data or label
addr
0000H-1FFFH immediate data or label
addr1
0000H-1FFFH immediate data or label (in Mk II mode only)
caddr
12-bit immediate data or label
faddr
11-bit immediate data or label
taddr
20H-7FH immediate data (however, bit0 = 0) or label
PORTn
PORT0-PORT3, PORT5-PORT8
IE
IEBT, IECSI, IET0, IET1, IE0-IE2, IE4
RBn
RB0-RB3
MBn
MB0, MB15
Note When processing 8-bit data, only even addresses can be specified.
m
PD75P4308
1 8
(2) Operation legend
A
: A register; 4-bit accumulator
B
: B register
C
: C register
D
: D register
E
: E register
H
: H register
L
: L register
X
: X register
XA
: Register pair (XA); 8-bit accumulator
BC
: Register pair (BC)
DE
: Register pair (DE)
HL
: Register pair (HL)
XA'
: Expansion register pair (XA')
BC'
: Expansion register pair (BC')
DE'
: Expansion register pair (DE')
HL'
: Expansion register pair (HL')
PC
: Program counter
SP
: Stack pointer
CY
: Carry flag; bit accumulator
PSW
: Program status word
MBE
: Memory bank enable flag
RBE
: Register bank enable flag
PORTn : Port n (n = 0 to 3, 5 to 8)
IME
: Interrupt master enable flag
IPS
: Interrupt priority select register
IE
: Interrupt enable flag
RBS
: Register bank select register
MBS
: Memory bank select register
PCC
: Processor clock control register
.
: Delimiter for address and bit
(
)
: Contents of address
H
: Hexadecimal data
m
PD75P4308
1 9
(3) Description of symbols used in addressing area
MB = 0 (000H-07FH)
MB = 15 (F80H-FFFH)
MB = MBS
(MBS = 0, 15)
MB = MBEMBS
(MBS = 0, 15)
*1
MB = 0
*2
MBE = 1 :
MBE = 0 :
*3
MB = 15, fmem = FB0H-FBFH, FF0H-FFFH
MB = 15, pmem = FC0H-FFFH
addr, addr1 = 0000H-1FFFH
*4
*5
*6
addr, addr1 =
*7
(Current PC) 15 to (Current PC) 1
(Current PC) +2 to (Current PC) +16
*8
caddr = 0000H-0FFFH (PC
12
= 0) or
1000H-1FFFH (PC
12
= 1)
faddr = 0000H-07FFH
taddr = 0020H-007FH
addr1 = 0000H-1FFFH (Mk II mode only)
*9
*10
*11
Program memory
addressing
Data memory
addressing
Remarks 1. MB indicates access-enabled memory banks.
2. In area *2, MB = 0 for both MBE and MBS.
3. In areas *4 and *5, MB = 15 for both MBE and MBS.
4. Areas *6 to *11 indicate corresponding address-enabled areas.
m
PD75P4308
2 0
(4) Description of machine cycles
S indicates the number of machine cycles required for skipping of skip-specified instructions. The value of S varies
as shown below.
No skip S = 0
Skipped instruction is 1-byte or 2-byte instruction S = 1
Skipped instruction is 3-byte instruction
Note
S = 2
Note 3-byte instructions: BR !addr, BRA !addr1, CALL !addr, CALLA !addr1
Caution The GETI instruction is skipped for one machine cycle.
One machine cycle equals one cycle (= t
CY
) of the CPU clock
F
. Use the PCC setting to select among four cycle
times.
m
PD75P4308
2 1
Group
Mnemonic
Operand
No. of Machine
Operation
Addressing
Skip condition
bytes cycle
area
Transfer
MOV
A, #n4
1
1
A
n4
String-effect A
reg1, #n4
2
2
reg1
n4
XA, #n8
2
2
XA
n8
String-effect A
HL, #n8
2
2
HL
n8
String-effect B
rp2, #n8
2
2
rp2
n8
A, @HL
1
1
A
(HL)
*1
A, @HL+
1
2 + S
A
(HL), then L
L + 1
*1
L = 0
A, @HL
1
2 + S
A
(HL), then L
L 1
*1
L = FH
A, @rpa1
1
1
A
(rpa1)
*2
XA, @HL
2
2
XA
(HL)
*1
@HL, A
1
1
(HL)
A
*1
@HL, XA
2
2
(HL)
XA
*1
A, mem
2
2
A
(mem)
*3
XA, mem
2
2
XA
(mem)
*3
mem, A
2
2
(mem)
A
*3
mem, XA
2
2
(mem)
XA
*3
A, reg1
2
2
A
reg1
XA, rp'
2
2
XA
rp'
reg1, A
2
2
reg1
A
rp'1, XA
2
2
rp'1
XA
XCH
A, @HL
1
1
A
(HL)
*1
A, @HL+
1
2 + S
A
(HL), then L
L + 1
*1
L = 0
A, @HL
1
2 + S
A
(HL), then L
L 1
*1
L = FH
A, @rpa1
1
1
A
(rpa1)
*2
XA, @HL
2
2
XA
(HL)
*1
A, mem
2
2
A
(mem)
*3
XA, mem
2
2
XA
(mem)
*3
A, reg1
1
1
A
reg1
XA, rp'
2
2
XA
rp'
Table
MOVT
XA, @PCDE
1
3
XA
(PC
12 - 8
+ DE)
ROM
reference
XA, @PCXA
1
3
XA
(PC
12 - 8
+ XA)
ROM
XA, @BCDE
1
3
XA
(BCDE)
ROM
Note
*6
XA, @BCXA
1
3
XA
(BCXA)
ROM
Note
*6
Note As for the B register, only the lower 1 bit is valid.
m
PD75P4308
2 2
Group
Mnemonic
Operand
No. of Machine
Operation
Addressing
Skip condition
bytes cycle
area
Bit transfer
MOV1
CY, fmem.bit
2
2
CY
(fmem.bit)
*4
CY, pmem.@L
2
2
CY
(pmem
7 - 2
+ L
3 - 2
.bit (L
1 - 0
))
*5
CY, @H + mem.bit
2
2
CY
(H + mem
3 - 0
.bit)
*1
fmem.bit, CY
2
2
(fmem.bit)
CY
*4
pmem.@L, CY
2
2
(pmem
7 - 2
+ L
3 - 2
.bit (L
1 - 0
))
CY
*5
@H + mem.bit, CY
2
2
(H + mem
3 - 0
.bit)
CY
*1
Operation
ADDS
A, #n4
1
1 + S
A
A + n4
carry
XA, #n8
2
2 + S
XA
XA + n8
carry
A, @HL
1
1 + S
A
A + (HL)
*1
carry
XA, rp'
2
2 + S
XA
XA + rp'
carry
rp'1, XA
2
2 + S
rp'1
rp'1 + XA
carry
ADDC
A, @HL
1
1
A, CY
A + (HL) + CY
*1
XA, rp'
2
2
XA, CY
XA + rp' + CY
rp'1, XA
2
2
rp'1, CY
rp'1 + XA + CY
SUBS
A, @HL
1
1 + S
A
A (HL)
*1
borrow
XA, rp'
2
2 + S
XA
XA rp'
borrow
rp'1, XA
2
2 + S
rp'1
rp'1 XA
borrow
SUBC
A, @HL
1
1
A, CY
A (HL) CY
*1
XA, rp'
2
2
XA, CY
XA rp' CY
rp'1, XA
2
2
rp'1, CY
rp'1 XA CY
AND
A, #n4
2
2
A
A ^ n4
A, @HL
1
1
A
A ^ (HL)
*1
XA, rp'
2
2
XA
XA ^ rp'
rp'1, XA
2
2
rp'1
rp'1 ^ XA
OR
A, #n4
2
2
A
A v n4
A, @HL
1
1
A
A v (HL)
*1
XA, rp'
2
2
XA
XA v rp'
rp'1, XA
2
2
rp'1
rp'1 v XA
XOR
A, #n4
2
2
A
A v n4
A, @HL
1
1
A
A v (HL)
*1
XA, rp'
2
2
XA
XA v rp'
rp'1, XA
2
2
rp'1
rp'1 v XA
m
PD75P4308
2 3
Group
Mnemonic
Operand
No. of Machine
Operation
Addressing
Skip condition
bytes cycle
area
Accumulator
RORC
A
1
1
CY
A
0
, A
3
CY, A
n - 1
An
manipulate
NOT
A
2
2
A
A
Increment/
INCS
reg
1
1 + S
reg
reg + 1
reg = 0
decrement
rp1
1
1 + S
rp1
rp1 + 1
rp1 = 00H
@HL
2
2 + S
(HL)
(HL) + 1
*1
(HL) = 0
mem
2
2 + S
(mem)
(mem) + 1
*3
(mem) = 0
DECS
reg
1
1 + S
reg
reg 1
reg = FH
rp'
2
2 + S
rp'
rp' 1
rp' = FFH
Compare
SKE
reg, #n4
2
2 + S
Skip if reg =n4
reg = n4
@HL, #n4
2
2 + S
Skip if (HL) = n4
*1
(HL) = n4
A, @HL
1
1 + S
Skip if A = (HL)
*1
A = (HL)
XA, @HL
2
2 + S
Skip if XA = (HL)
*1
XA = (HL)
A, reg
2
2 + S
Skip if A = reg
A = reg
XA, rp'
2
2 + S
Skip if XA = rp'
XA = rp'
Carry flag
SET1
CY
1
1
CY
1
manipulate
CLR1
CY
1
1
CY
0
SKT
CY
1
1 + S
Skip if CY = 1
CY = 1
NOT1
CY
1
1
CY
CY
m
PD75P4308
2 4
Group
Mnemonic
Operand
No. of Machine
Operation
Addressing
Skip condition
bytes cycle
area
Memory bit
SET1
mem.bit
2
2
(mem.bit)
1
*3
manipulate
fmem.bit
2
2
(fmem.bit)
1
*4
pmem.@L
2
2
(pmem
7 - 2
+ L
3 - 2
.bit(L
1 - 0)
)
1
*5
@H + mem.bit
2
2
(H+mem
3 - 0
.bit)
1
*1
CLR1
mem.bit
2
2
(mem.bit)
0
*3
fmem.bit
2
2
(fmem.bit)
0
*4
pmem.@L
2
2
(pmem
7 - 2
+ L
3 - 2
.bit(L
1 - 0
))
0
*5
@H + mem.bit
2
2
(H+mem
3 - 0
.bit)
0
*1
SKT
mem.bit
2
2 + S
Skip if (mem.bit) = 1
*3
(mem.bit)=1
fmem.bit
2
2 + S
Skip if (fmem.bit) = 1
*4
(fmem.bit)=1
pmem.@L
2
2 + S
Skip if (pmem
7 - 2
+ L
3 - 2
.bit(L
1 - 0
)) = 1
*5
(pmem.@L) = 1
@H + mem.bit
2
2 + S
Skip if (H + mem
3 - 0
.bit) = 1
*1
(@H + mem.bit) = 1
SKF
mem.bit
2
2 + S
Skip if (mem.bit) = 0
*3
(mem.bit) = 0
fmem.bit
2
2 + S
Skip if (fmem.bit) = 0
*4
(fmem.bit) = 0
pmem.@L
2
2 + S
Skip if (pmem
7 - 2
+ L
3 - 2
.bit(L
1 - 0
)) = 0
*5
(pmem.@L) = 0
@H + mem.bit
2
2 + S
Skip if (H + mem
3 - 0
.bit) = 0
*1
(@H + mem.bit) = 0
SKTCLR
fmem.bit
2
2 + S
Skip if (fmem.bit) = 1 and clear
*4
(fmem.bit) = 1
pmem.@L
2
2 + S
Skip if (pmem
7
-
2
+ L
3 - 2
.bit (L
1 - 0
)) = 1 and clear
*5
(pmem.@L) = 1
@H + mem.bit
2
2 + S
Skip if (H + mem
3 - 0
.bit) = 1 and clear
*1
(@H + mem.bit) = 1
AND1
CY, fmem.bit
2
2
CY
CY ^ (fmem.bit)
*4
CY, pmem.@L
2
2
CY
CY ^ (pmem
7 - 2
+ L
3 - 2
.bit(L
1 - 0
))
*5
CY, @H + mem.bit
2
2
CY
CY ^ (H + mem
3 - 0
.bit)
*1
OR1
CY, fmem.bit
2
2
CY
CY v (fmem.bit)
*4
CY, pmem.@L
2
2
CY
CY v (pmem
7 - 2
+ L
3 - 2
.bit(L
1 - 0
))
*5
CY, @H + mem.bit
2
2
CY
CY v (H + mem
3 - 0
.bit)
*1
XOR1
CY, fmem.bit
2
2
CY
CY v (fmem.bit)
*4
CY, pmem.@L
2
2
CY
CY v (pmem
7 - 2
+ L
3 - 2
.bit(L
1 - 0
))
*5
CY, @H + mem.bit
2
2
CY
CY v (H + mem
3 - 0
.bit)
*1
m
PD75P4308
2 5
Group
Mnemonic
Operand
No. of Machine
Operation
Addressing
Skip condition
bytes cycle
area
Branch
BR
Note1
addr
--
--
PC
12 - 0
addr
*6
Assembler selects the most
appropriate instruction among
the following:
BR !addr
BRCB !caddr
BR $addr
addr1
--
--
PC
12 - 0
addr1
*11
Assembler selects the most
appropriate instruction among
the following:
BRA !addr1
BR !addr
BRCB !caddr
BR $addr1
!addr
3
3
PC
12 - 0
addr
*6
$addr
1
2
PC
12 - 0
addr
*7
$addr1
1
2
PC
12 - 0
addr1
PCDE
2
3
PC
12 - 0
PC
12 - 8
+ DE
PCXA
2
3
PC
12 - 0
PC
12 - 8
+ XA
BCDE
2
3
PC
12 - 0
BCDE
Note 2
*6
BCXA
2
3
PC
12 - 0
BCXA
Note 2
*6
BRA
Note 1
!addr1
3
3
PC
12 - 0
addr1
*11
BRCB
!caddr
2
2
PC
12 - 0
PC
12
+ caddr
11 - 0
*8
Notes 1. Shaded areas indicate support for the Mk II mode only.
2. Only the lower 2 bit in the B register is valid.
m
PD75P4308
2 6
Group
Mnemonic
Operand
No. of Machine
Operation
Addressing
Skip condition
bytes cycle
area
Subroutine
CALLA
Note
!addr1
3
3
(SP 5)
0, 0, 0, PC
12
*11
stack control
(SP 6) (SP 3) (SP 4)
PC
11 - 0
(SP 2)
,
, MBE, RBE
PC
12 - 0
addr1, SP
SP 6
CALL
Note
!addr
3
3
(SP 4) (SP 1) (SP 2)
PC
11 - 0
*6
(SP 3)
MBE, RBE, 0, PC
12
PC
12 - 0
addr, SP
SP 4
4
(SP 5)
0, 0, 0, PC
12
(SP 6) (SP 3) (SP 4)
PC
11 - 0
(SP 2)
,
, MBE, RBE
PC
12 - 0
addr, SP
SP 6
CALLF
Note
!faddr
2
2
(SP 4) (SP 1) (SP 2)
PC
11 - 0
*9
(SP 3)
MBE, RBE, 0, PC
12
PC
12 - 0
00 + faddr, SP
SP 4
3
(SP 5)
0, 0, 0, PC
12
(SP 6) (SP 3) (SP 4)
PC
11 - 0
(SP 2)
,
, MBE, RBE
PC
12 - 0
00 + faddr, SP
SP 6
RET
Note
1
3
MBE, RBE, 0, PC
12
(SP + 1)
PC
11 - 0
(SP) (SP + 3) (SP + 2)
SP
SP + 4
,
, MBE, RBE
(SP + 4)
0, 0, 0, PC
12
(SP + 1)
PC
11 - 0
(SP) (SP + 3) (SP + 2)
SP
SP + 6
RETS
Note
1
3 + S
MBE, RBE, 0, PC
12
(SP + 1)
Unconditional
PC
11 - 0
(SP) (SP + 3) (SP + 2)
SP
SP + 4
then skip unconditionally
,
, MBE, RBE
(SP + 4)
0, 0, 0, PC
12
(SP + 1)
PC
11, 0
(SP) (SP + 3) (SP + 2)
SP
SP + 6
then skip unconditionally
RETI
1
3
MBE, RBE, 0, PC
12
(SP + 1)
PC
11 - 0
(SP) (SP + 3) (SP + 2)
PSW
(SP + 4) (SP + 5), SP
SP + 6
0, 0, 0, PC
12
(SP + 1)
PC
11 - 0
(SP) (SP + 3) (SP + 2)
PSW
(SP + 4) (SP + 5), SP
SP + 6
Note Shaded areas indicate support for the Mk II mode only. Other areas indicate support for the Mk I mode only.
m
PD75P4308
2 7
Group
Mnemonic
Operand
No. of Machine
Operation
Addressing
Skip condition
bytes cycle
area
Subroutine
PUSH
rp
1
1
(SP 1) (SP 2)
rp, SP
SP 2
stack control
BS
2
2
(SP 1)
MBS, (SP 2)
RBS, SP
SP 2
POP
rp
1
1
rp
(SP + 1) (SP), SP
SP + 2
BS
2
2
MBS
(SP + 1), RBS
(SP), SP
SP + 2
Interrupt
EI
2
2
IME (IPS.3)
1
control
IE
2
2
IE
1
DI
2
2
IME (IPS.3)
0
IE
2
2
IE
0
I/O
IN
Note 1
A, PORTn
2
2
A
PORTn
(n = 0 - 3, 5 - 8)
XA, PORTn
2
2
XA
PORTn +
1
, PORTn
(n = 6)
OUT
Note 1
PORTn, A
2
2
PORTn
A
(n = 2 - 3, 5 - 8)
PORTn, XA
2
2
PORTn +
1
, PORTn
XA
(n = 6)
CPU control
HALT
2
2
Set HALT Mode(PCC.2
1)
STOP
2
2
Set STOP Mode(PCC.3
1)
NOP
1
1
No Operation
Special
SEL
RBn
2
2
RBS
n
(n = 0 - 3)
MBn
2
2
MBS
n
(n = 0, 15)
GETI
Note 2, 3
taddr
1
3
When using TBR instruction
*10
PC
12 - 0
(taddr)
4 - 0
+ (taddr + 1)
When using TCALL instruction
(SP 4) (SP 1) (SP 2)
PC
11 - 0
(SP 3)
MBE, RBE, 0, PC
12
PC
12 - 0
(taddr)
4 - 0
+ (taddr + 1)
SP
SP 4
When using instruction other than
Determined by
TBR or TCALL
referenced
Execute (taddr) (taddr + 1) instructions
instruction
1
When using TBR instruction
*10
PC
12 - 0
(taddr)
4 - 0
+ (taddr + 1)
4
When using TCALL instruction
(SP 5)
0, 0, 0, PC
12
(SP 6) (SP 3) (SP 4)
PC
11 - 0
(SP 2)
,
, MBE, RBE
PC
12 - 0
(taddr)
4 - 0
+ (taddr + 1)
SP
SP 6
3
When using instruction other than
Determined by
TBR or TCALL
referenced
Execute (taddr) (taddr + 1) instructions
instruction
Notes 1. Before executing the IN or OUT instruction, set MBE to 0 or 1 and set MBS to 15.
2. TBR and TCALL are assembler pseudo-instructions for the GETI instruction's table definitions.
3. Shaded areas indicate support for the Mk II mode only. Other areas indicate support for the Mk I mode
only.
m
PD75P4308
2 8
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY
The program memory in the
m
PD75P4308 is a 8192
8-bit electrically write-enabled one-time PROM. The pins
listed in the table below are used for this one-time PROM's write/verify operations. Clock input from the X1 pin is
used instead of address input as a method for updating addresses.
Pin name
Function
V
PP
Pin (usually V
DD
) where programming voltage is applied during
program memory write/verify
X1, X2
Clock input pin for address updating during program memory write/
verify. Input the X1 pin's inverted signal to the X2 pin.
MD0-MD3
Operation mode selection pin for program memory write/verify
D0/P60/KR0-D3/P63/KR3 (lower 4) 8-bit data I/O pin for program memory write/verify
D4/P50-D7/P53 (upper 4)
V
DD
Pin where power supply voltage is applied. Power voltage range
for normal operation is 1.8 to 5.5 V. Apply 6.0 V for program
memory write/verify.
Caution Pins not used for program memory write/verify connect to Vss via a pull-down resistor.
8.1 Operation Modes for Program Memory Write/Verify
When +6 V is applied to the
m
PD75P4308's V
DD
pin and +12.5 V is applied to its V
PP
pin, program write/verify modes
are in effect. Furthermore, the following detailed operation modes can be specified by setting pins MD0 to MD3 as
shown below.
Operation mode specification
Operation mode
V
PP
V
DD
MD0
MD1
MD2
MD3
+12.5 V
+6 V
H
L
H
L
Zero-clear program memory address
L
H
H
H
Write mode
L
L
H
H
Verify mode
H
H
H
Program inhibit mode
: L or H
m
PD75P4308
2 9
8.2 Program Memory Write Procedure
High-speed program memory write can be executed via the following steps.
(1)
Pull down unused pins to V
SS
via resistors. Set the X1 pin to low.
(2)
Apply +5 V to the V
DD
and V
PP
pins.
(3)
Wait 10
m
s.
(4)
Zero-clear mode for program memory addresses.
(5)
Apply +6 V to V
DD
and +12.5 V to V
PP
.
(6)
Write data using 1-ms write mode.
(7)
Verify mode. If write is verified, go to step (8) and if write is not verified, go back to steps (6) and (7).
(8)
X [= number of write operations from steps (6) and (7)]
1 ms additional write
(9)
4 pulse inputs to the X1 pin updates (increments +1) the program memory address.
(10) Repeat steps (6) to (9) until the last address is completed.
(11) Zero-clear mode for program memory addresses.
(12) Apply +5 V to the V
DD
and V
PP
pins.
(13) Power supply OFF
The following diagram illustrates steps (2) to (9).
V
PP
V
DD
V
DD
+ 1
V
DD
V
PP
V
DD
X1
D0/P60/KR0-
D3/P63/KR3
D4/P50-
D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
Write
Verify
Additional write
Address
increment
X repetitions
Data input
Data output
Data input
m
PD75P4308
3 0
8.3 Program Memory Read Procedure
The
m
PD75P4308 can read out the program memory contents via the following steps.
(1)
Pull down unused pins to V
SS
via resistors. Set the X1 pin to low.
(2)
Apply +5 V to the V
DD
and V
PP
pins.
(3)
Wait 10
m
s.
(4)
Zero-clear mode for program memory addresses.
(5)
Apply +6 V to V
DD
and +12.5 V to V
PP
.
(6)
Verify mode. When a clock pulse is input to the X1 pin, data is output sequentially to one address at a
time based on a cycle of four pulse inputs.
(7)
Zero-clear mode for program memory addresses.
(8)
Apply +5 V to the V
DD
and V
PP
pins.
(9)
Power supply OFF
The following diagram illustrates steps (2) to (7).
V
PP
V
DD
V
DD
+ 1
V
DD
V
DD
X1
D0/P60/KR0-
D3/P63/KR3
D4/P50-
D7/P53
Data output
Data output
MD0/P30
MD2/P32
MD3/P33
MD1/P31
"L"
V
PP
m
PD75P4308
3 1
8.4 One-Time PROM Screening
Due to its structure, the one-time PROM cannot be fully tested before shipment by NEC. Therefore, NEC
recommends the screening process, that is, after the required data is written to the PROM and the PROM is stored
under the high-temperature conditions shown below, the PROM should be verified.
Storage temperature Storage time
125 C 24 hours
m
PD75P4308
3 2
9. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings (T
A
= 25 C)
Parameter Symbol Conditions Ratings Unit
Supply voltage V
DD
0.3 to +7.0 V
PROM supply voltage V
PP
0.3 to +13.5 V
Input voltage V
I1
Other than port 5 0.3 to V
DD
+0.3 V
V
I2
Port 5 (N-ch open-drain) 0.3 to +14 V
Output voltage V
O
0.3 to V
DD
+0.3 V
High-level output current I
OH
Per pin 10 mA
Total for all pins 30 mA
Low-level output current I
OL
Per pin 30 mA
Total for all pins 220 mA
Operating ambient T
A
40 to +85 C
temperature
Storage temperature T
stg
65 to +150 C
Caution If the absolute maximum ratings of even one of the parameters is exceeded even momentarily,
the quality of the product may be degraded. The absolute maximum ratings are therefore values
which, when exceeded, can cause the product to be damaged. Be sure that these values are never
exceeded when using the product.
Capacitance (T
A
= 25C, V
DD
= 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input capacitance C
IN
f = 1 MHz 15 pF
Output capacitance C
OUT
Unmeasured pins returned to 0 V
15 pF
I/O capacitance C
IO
15 pF
m
PD75P4308
3 3
System Clock Oscillation Circuit Characteristics (T
A
= 40 to +85C, V
DD
= 1.8 to 5.5. V)
Resonator
Recommended
Parameter Conditions MIN. TYP. MAX. Unit
constants
Ceramic Oscillation frequency 1.0 6.0
Note 3
MHz
resonator (f
X
)
Note 1
Oscillation After V
DD
has 4 ms
stabilization time
Note 2
reached MIN. value of
oscillation voltage
range
Crystal Oscillation frequency 1.0 6.0
Note 3
MHz
resonator (f
X
)
Note 1
Oscillation V
DD
= 5.0 V 10 % 10 ms
stabilization time
Note 2
30 ms
External X1 input frequency 1.0 6.0
Note 3
MHz
clock (f
X
)
Note 1
X1 input high-, 83.3 500 ns
low-level widths
(t
XH
, t
XL
)
Notes 1. The oscillation frequency and X1 input frequency shown above indicate characteristics of the oscillation
circuit only. For the instruction execution time, refer to AC Characteristics.
2. The oscillation stabilization time is necessary for oscillation to stabilize after applying V
DD
or releasing
the STOP mode.
3. When the oscillation frequency f
X
satisfies 4.19 MHz < f
X
- 6.0 MHz at 1.8 V - V
DD
< 2.7 V, do not set
PCC = 0011 as an instruction execution time. If PCC = 0011 is selected, one machine cycle takes less
than 0.95
m
s, and the MIN. value rating of 0.95
m
s is not satisfied.
Caution When using the system clock oscillation circuit, wire the portion enclosed in the dotted line in
the above figure as follows to prevent adverse influence due to wiring capacitance:
Keep the wiring length as short as possible.
Do not cross the wiring with other signal lines.
Do not route the wiring in the vicinity of a line through which a high alternating current flows.
Always keep the ground point of the capacitor of the oscillation circuit at the same potential
as V
SS
. Do not ground to a ground pattern through which a high current flows.
Do not extract signals from the oscillation circuit.
X1
X2
X1
X2
C1
C2
X1
X2
C1
C2
m
PD75P4308
3 4
Recommended Oscillation Circuit Constant
Ceramic Resonator (T
A
= 40 to +85C)
Frequency
Recommended Oscillation voltage
Manufacturer Product name
circuit constant (pF) range (V
DD
)
Remark
(MHz)
C1 C2 MIN. MAX.
Murata CSB1000J
Note
Rd = 5.6 k
W
Manufacturing
CSA2.00MG
Co., Ltd.
CST2.00MG On-chip capacitor
CSA3.58MG
CST3.58MGW On-chip capacitor
CSA3.58MGU
CST3.58MGWU On-chip capacitor
CSA4.00MG
CST4.00MGW On-chip capacitor
CSA4.00MGU
CST4.00MGWU On-chip capacitor
CSA4.19MG
CST4.19MGW On-chip capacitor
CSA4.19MGU
CST4.19MGWU On-chip capacitor
CSA6.00MG
CST6.00MGW On-chip capacitor
CSA6.00MGU
CST6.00MGWU On-chip capacitor
Kyocera Corp. KBR-1000F/Y T
A
= 20 to +80C
KBR-2.0MS
KBR-4.0MSA
KBR-4.0MKS On-chip capacitor, T
A
= 20 to +80C
PBRC4.00A T
A
= 20 to +80C
PBRC4.00B On-chip capacitor, T
A
= 20 to +80C
KBR-4.19MSA T
A
= 20 to +80C
KBR-4.19MSB
KBR-4.19MKS On-chip capacitor, T
A
= 20 to +80C
PBRC4.19A T
A
= 20 to +80C
PBRC4.19B On-chip capacitor, T
A
= 20 to +80C
KBR-6.0MSA T
A
= 20 to +80C
KBR-6.0MSB
KBR-6.0MKS On-chip capacitor, T
A
= 20 to +80C
PBRC6.00A T
A
= 20 to +80C
PBRC6.00B On-chip capacitor, T
A
= 20 to +80C
Caution The oscillation circuit constants and oscillation voltage range indicate conditions for stable
oscillation but do not guarantee accuracy of the oscillation frequency. If the application circuit
requires accuracy of the oscillation frequency, it is necessary to set the oscillation frequency of
the resonator in the application circuit. For this, it is necessary to directly contact the manufacturer
of the resonator being used.
1.0 100 100 2.6 5.5
2.0 30 30 1.8 5.5
--
--
3.58 30 30 1.8 5.5
--
--
30 30 1.8
--
--
4.0 30 30 2.0 5.5
--
--
30 30 1.8
--
--
4.19 30 30 1.9 5.5
--
--
30 30 1.8
--
--
6.0 30 30 2.9 5.5
--
--
30 30 2.0
--
--
1.0 100 100 1.8 5.5
2.0 47 47 2.4 5.5
4.0 33 33 1.8 5.5
--
--
33 33
--
--
4.19 33 33 1.8 5.5
--
--
33 33
--
--
6.0 33 33 1.8 5.5
--
--
33 33
--
--
m
PD75P4308
3 5
Note When using a CSB1000J (1.0 MHz) of Murata Manufacturing Co., Ltd. as a ceramic resonator, a limiting
resistor (Rd = 5.6 k
W
) is necessary (See diagram below). When using any other recommended resistor,
it is not necessary.
CSB1000J
X1
X2
C2
C1
Rd
m
PD75P4308
3 6
DC Characteristics (T
A
= 40 to +85C, V
DD
= 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Low-level I
OL
Per pin 15 mA
output current
Total for all pins 150 mA
High-level input V
IH1
Ports 2, 3, 8 2.7 V - V
DD
- 5.5 V 0.7 V
DD
V
DD
V
voltage
1.8 V - V
DD
< 2.7 V 0.9 V
DD
V
DD
V
V
IH2
Ports 0, 1, 6, 7, RESET 2.7 V - V
DD
- 5.5 V 0.8 V
DD
V
DD
V
1.8 V - V
DD
< 2.7 V 0.9 V
DD
V
DD
V
V
IH3
Port 5 2.7 V - V
DD
- 5.5 V 0.7 V
DD
13 V
(N-ch open-drain) 1.8 V - V
DD
< 2.7 V 0.9 V
DD
13 V
V
IH4
X1 V
DD
0.1 V
DD
V
Low-level input V
IL1
Ports 2, 3, 5, 8 2.7 V - V
DD
- 5.5 V 0 0.3 V
DD
V
voltage
1.8 V - V
DD
< 2.7 V 0 0.1 V
DD
V
V
IL2
Ports 0, 1, 6, 7, RESET 2.7 V - V
DD
- 5.5 V 0 0.2 V
DD
V
1.8 V - V
DD
< 2.7 V 0 0.1 V
DD
V
V
IL3
X1 0 0.1 V
High-level output V
OH
SCK, SO, Ports 2, 3, 6 to 8 I
OH
= 1 mA V
DD
0.5 V
voltage
Low-level output V
OL1
SCK, SO, Ports 2, 3, 5 to 8 I
OL
= 15 mA, 0.2 2.0 V
voltage V
DD
= 5.0 V 10 %
I
OL
= 1.6 mA 0.4 V
V
OL2
SB0 N-ch open-drain 0.2 V
DD
V
Pull-up resistor 1 k
W
High-level input I
LIH1
V
I
= V
DD
Pins other than port 5 and X1 3
m
A
leakage current
I
LIH2
X1 20
m
A
I
LIH3
V
I
= 13 V Port 5 (N-ch open-drain) 20
m
A
Low-level input I
LIL1
V
I
= 0 V Pins other than port 5 and X1 3
m
A
leakage current
I
LIL2
X1 20
m
A
I
LIL3
Port 5 (N-ch open-drain) 3
m
A
Other than the input instruction
execution time
30
m
A
V
DD
= 5.0 V 10 27
m
A
V
DD
= 3.0 V 3 8
m
A
Port 5
(N-ch open-drain)
At the input
instruction
execution time
m
PD75P4308
3 7
High-level output I
LOH1
V
O
= V
DD
SCK, SO/SB0, Ports 2, 3, 6 to 8 3
m
A
leakage current
I
LOH2
V
O
= 13 V Port 5 (N-ch open-drain) 20
m
A
Low-level output I
LOL
V
O
= 0 V 3
m
A
leakage current
On-chip pull-up R
L
V
I
= 0 V Ports 0 to 3, 6 to 8 (except P00 pin) 50 100 200 k
W
resistor
Supply current
Note 1
I
DD1
V
DD
= 5.0 V 10 %
Note 2
2.20 7.00 mA
V
DD
= 3.0 V 10 %
Note 3
0.43 1.30 mA
I
DD2
HALT V
DD
= 5.0 V 10 % 0.53 1.60 mA
mode
V
DD
= 3.0 V 10 % 0.21 0.70 mA
I
DD1
V
DD
= 5.0 V 10 %
Note 2
1.70 5.10 mA
V
DD
= 3.0 V 10 %
Note 3
0.35 1.10 mA
I
DD2
HALT V
DD
= 5.0 V 10 % 0.51 1.60 mA
mode V
DD
= 3.0 V 10 % 0.19 0.60 mA
I
DD5
STOP V
DD
= 5.0 V 10 % 0.05 10.0
m
A
mode
V
DD
= 3.0 V 10 % 0.02 5.00
m
A
T
A
= 25C 0.02 3.00
m
A
Notes 1. The current flowing through the on-chip pull-up resistor is not included.
2. When the device operates in high-speed mode with the processor clock control register (PCC) set to
0011.
3. When the device operates in low-speed mode with PCC set to 0000.
6.0 MHz
crystal
oscillation
C1 = C2
= 22 pF
4.19 MHz
crystal
oscillation
C1 = C2
= 22 pF
DC Characteristics (T
A
= 40 to +85C, V
DD
= 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
m
PD75P4308
3 8
AC Characteristics (T
A
= 40 to +85C, V
DD
= 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
t
CY
Operates with V
DD
= 2.7 to 5.5 V 0.67 64
m
s
system clock
0.95 64
m
s
TI0, TI1 input frequency f
TI
V
DD
= 2.7 to 5.5 V 0 1 MHz
0 275 kHz
TI0, TI1 input high-, t
TIH
, t
TIL
V
DD
= 2.7 to 5.5 V 0.48
m
s
low-level widths
1.8
m
s
Interrupt input high-, t
INTH
, t
INTL
INT0 IM02 = 0 Note 2
m
s
low-level widths
IM02 = 1 10
INT1, 2, 4 10
m
s
KR0-7 10
m
s
RESET low-level width t
RSL
10
m
s
Notes 1. The cycle time (minimum instruction
execution time) of the CPU clock (
F
) is
determined by the oscillation frequency
of the connected resonator and proces-
sor clock control register (PCC).
The figure on the right shows the supply
voltage V
DD
vs. cycle time t
CY
character-
istics when the device operates with the
system clock.
2. 2t
CY
or 128/f
X
depending on the setting
of the interrupt mode register (IM0).
CPU clock cycle time
Note 1
(minimum instruction execution
time = 1 machine cycle)
0
1
2
3
4
5
6
1
0.5
2
3
4
5
6
60
64
(with system clock)
t
CY
vs V
DD
Operation guaranteed range
Cycle time t
CY
[ s]
Supply voltage V
DD
[V]
m
PD75P4308
3 9
Serial transfer operation
2-wire and 3-wire serial I/O modes (SCK internal clock output): (T
A
= 40 to +85C, V
DD
= 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time t
KCY1
V
DD
= 2.7 to 5.5 V 1300 ns
3800 ns
SCK high-, low-level t
KL1
, t
KH1
V
DD
= 2.7 to 5.5 V t
KCY1
/250 ns
widths
t
KCY1
/2150 ns
SI
Note 1
setup time (to SCK
)
t
SIK1
V
DD
= 2.7 to 5.5 V 150 ns
500 ns
SI
Note 1
hold time (from SCK
) t
KSI1
V
DD
= 2.7 to 5.5 V 400 ns
600 ns
SCK
SO
Note 1
output t
KSO1
R
L
= 1 k
W
,
V
DD
= 2.7 to 5.5 V 0 250 ns
delay time C
L
= 100 pF
Note 2
0 1000 ns
Notes 1. In the 2-wire serial I/O mode, read SB0 instead.
2. R
L
and C
L
are the load resistance and load capacitance of the SO output line.
2-wire and 3-wire serial I/O modes (SCK external clock input): (T
A
= 40 to +85C, V
DD
= 1.8 to 5.5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
SCK cycle time t
KCY2
V
DD
= 2.7 to 5.5 V 800 ns
3200 ns
SCK high-, low-level t
KL2
, t
KH2
V
DD
= 2.7 to 5.5 V 400 ns
widths
1600 ns
SI
Note 1
setup time (to SCK
)
t
SIK2
V
DD
= 2.7 to 5.5 V 100 ns
150 ns
SI
Note 1
hold time (from SCK
) t
KSI2
V
DD
= 2.7 to 5.5 V 400 ns
600 ns
SCK
SO
Note 1
output t
KSO2
R
L
= 1 k
W
,
V
DD
= 2.7 to 5.5 V 0 300 ns
delay time C
L
= 100 pF
Note 2
0 1000 ns
Notes 1. In the 2-wire serial I/O mode, read SB0 instead.
2. R
L
and C
L
are the load resistance and load capacitance of the SO output line.
m
PD75P4308
4 0
AC timing test points (except X1 input)
V
IH
(MIN.)
V
IL
(MAX.)
V
OH
(MIN.)
V
OL
(MAX.)
V
IH
(MIN.)
V
IL
(MAX.)
V
OH
(MIN.)
V
OL
(MAX.)
Clock timing
1/f
X
t
XL
t
XH
V
DD
0.1 V
0.1 V
X1 input
TI0, TI1 timing
1/f
TI
t
TIL
t
TIH
TI0, TI1
m
PD75P4308
4 1
Serial transfer timing
3-wire serial I/O mode
t
KCY1
,
2
t
KL1
,
2
t
KH1
,
2
SCK
Output data
SO
Input data
SI
t
SIK1
,
2
t
KSI1
,
2
t
KSO1
,
2
2-wire serial I/O mode
SCK
SB0
t
KCY1
,
2
t
KL1
,
2
t
KH1
,
2
t
KSO1
,
2
t
SIK1
,
2
t
KSI1
,
2
m
PD75P4308
4 2
Interrupt input timing
INT0, 1, 2, 4
KR0-7
t
INTL
t
INTH
RESET input timing
RESET
t
RSL
Data retention characteristics of data memory in STOP mode and at low supply voltage
(T
A
= 40 to +85C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Release signal set time t
SREL
0
m
s
Oscillation stabilization t
WAIT
Released by RESET 2
15
/f
x
ms
wait time
Note 1
Released by interrupt request Note 2 ms
Notes 1. The oscillation stabilization wait time is the time during which the CPU stops operating to prevent
unstable operation when oscillation is started.
2. Set by the basic interval timer mode register (BTM). (Refer to the table below.)
BTM3 BTM2 BTM1 BTM0
Wait time
f
X
= 4.19 MHz f
X
= 6.0 MHz
0
0
0
2
20
/f
X
(approx. 250 ms) 2
20
/f
X
(approx. 175 ms)
0
1
1
2
17
/f
X
(approx. 31.3 ms) 2
17
/f
X
(approx. 21.8 ms)
1
0
1
2
15
/f
X
(approx. 7.81 ms) 2
15
/f
X
(approx. 5.46 ms)
1
1
1
2
13
/f
X
(approx. 1.95 ms) 2
13
/f
X
(approx. 1.37 ms)
m
PD75P4308
4 3
Data retention timing (when STOP mode released by RESET)
STOP mode
Data retention mode
Internal reset operation
Operation mode
STOP instruction execution
HALT mode
V
DD
RESET
V
DDDR
t
WAIT
t
SREL
Data retention timing (standby release signal: when STOP mode released by interrupt signal)
STOP mode
Data retention mode
Operation mode
HALT mode
t
SREL
V
DDDR
t
WAIT
STOP instruction execution
V
DD
Standby release signal
(interrupt request)
m
PD75P4308
4 4
DC Programming Characteristics (T
A
= 25 5C, V
DD
= 6.0 0.25 V, V
PP
= 12.5 0.3 V, V
SS
= 0V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
High-level input voltage V
IH1
Other than X1, X2 0.7 V
DD
V
DD
V
V
IH2
X1, X2 V
DD
0.5 V
DD
V
Low-level input voltage V
IL1
Other than X1, X2 0 0.3 V
DD
V
V
IL2
X1, X2 0 0.4 V
Input leakage current I
LI
V
IN
= V
IL
or V
IH
10
m
A
High-level output voltage V
OH
I
OH
= 1 mA V
DD
1.0 V
Low-level output voltage V
OL
I
OL
= 1.6 mA 0.4 V
V
DD
supply current I
DD
30 mA
V
PP
supply current I
PP
MD0 = V
IL
, MD1 = V
IH
30 mA
Cautions 1. Keep V
PP
to within +13.5 V, including overshoot.
2. Apply V
DD
before V
PP
and turn it off after V
PP
.
AC Programming Characteristics (T
A
= 25 5C, V
DD
= 6.0 0.25 V, V
PP
= 12.5 0.3 V, V
SS
= 0 V)
Parameter Symbol Note 1 Conditions MIN. TYP. MAX. Unit
Address setup time
Note 2
t
AS
t
AS
2
m
s
(to MD0
)
MD1 setup time (to MD0
)
t
M1S
t
OES
2
m
s
Data setup time (to MD0
)
t
DS
t
DS
2
m
s
Address hold time
Note 2
t
AH
t
AH
2
m
s
(from MD0
)
Data hold time (from MD0
)
t
DH
t
DH
2
m
s
MD0
data output float t
DF
t
DF
0 130 ns
delay time
V
PP
setup time (to MD3
)
t
VPS
t
VPS
2
m
s
V
DD
setup time (to MD3
)
t
VDS
t
VCS
2
m
s
Initial program pulse width t
PW
t
PW
0.95 1.0 1.05 ms
Additional program pulse width t
OPW
t
OPW
0.95 21.0 ms
MD0 setup time (to MD1
)
t
M0S
t
CES
2
m
s
MD0
data output delay time t
DV
t
DV
MD0 = MD1 = V
IL
1
m
s
MD1 hold time (from MD0
)
t
M1H
t
OEH
t
M1H
+ t
M1R
50
m
s
2
m
s
MD1 recovery time (from MD0
) t
M1R
t
OR
2
m
s
Program counter reset time t
PCR
--
10
m
s
X1 input high-, low-level widths t
XH
, t
XL
-- 0.125
m
s
X1 input frequency f
X
-- 4.19 MHz
Initial mode set time t
I
--
2
m
s
MD3 setup time (to MD1
)
t
M3S
--
2
m
s
MD3 hold time (from MD1
)
t
M3H
--
2
m
s
MD3 setup time (to MD0
)
t
M3SR
-- When program memory is read 2
m
s
Address
Note 2
data output t
DAD
t
ACC
When program memory is read 2
m
s
delay time
Address
Note 2
data output t
HAD
t
OH
When program memory is read 0 130 ns
hold time
MD3 hold time (from MD0
)
t
M3HR
-- When program memory is read 2
m
s
MD3
data output float t
DFR
-- When program memory is read 2
m
s
delay time
Notes 1. Symbol of corresponding
m
PD27C256A
2. The internal address signal is incremented by one at the rising edge of the fourth X1 input and is not
connected to a pin.
m
PD75P4308
4 5
Program Memory Write Timing
V
PP
V
DD
V
DD
+1
V
DD
X1
D0/P60/KR0-
D3/P63/KR3
D4/P50-
D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
V
PP
V
DD
Data input
t
VPS
t
VDS
t
XH
t
XL
t
I
t
DS
t
DH
t
PW
t
DV
t
DF
t
M1R
t
M0S
t
DS
t
DH
t
OPW
t
AH
t
AS
t
M1S
t
M1H
t
PCR
t
M3S
t
M3H
Data input
Data input
Data output
Program Memory Read Timing
V
PP
V
DD
V
DD
+1
V
DD
X1
D0/P60/KR0-
D3/P63/KR3
D4/P50-
D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
V
DD
V
PP
Data output
t
VPS
t
VDS
t
XH
t
XL
t
DAD
t
HAD
t
DV
t
DFR
t
M3HR
t
I
t
PCR
t
M3SR
Data output
m
PD75P4308
4 6
10. CHARACTERISTIC CURVES (FOR REFERENCE ONLY)
10
5.0
1.0
0.5
0.1
0.05
0.01
0.005
0.001
0
1
2
3
4
5
6
7
8
Supply Voltage V
DD
(V)
PCC = 0010
PCC = 0001
PCC = 0000
System clock HALT mode
6.0 MHz
X1
X2
22 pF
22 pF
Crystal
resonator
Supply Current I
DD
(mA)
I
DD
vs V
DD
(System clock: 6.0 MHz crystal resonator)
(T
A
= 25C)
PCC = 0011
m
PD75P4308
4 7
10
5.0
1.0
0.5
0.1
0.05
0.01
0.005
0.001
0
1
2
3
4
5
6
7
8
Supply Voltage V
DD
(V)
PCC = 0011
PCC = 0010
PCC = 0001
PCC = 0000
System clock HALT mode
4.19 MHz
X1
X2
22 pF
22 pF
Crystal
resonator
Supply Current I
DD
(mA)
I
DD
vs V
DD
(System clock: 4.19 MHz crystal resonator)
(T
A
= 25C)
m
PD75P4308
4 8
11. PACKAGE DRAWINGS
36 PIN PLASTIC SHRINK SOP (300 mil)
B
E
L
K
F
G
I
H
J
A
1
18
19
36
detail of lead end
5
5
M
M
D
N
P36GM-80-300B-3
ITEM
MILLIMETERS
INCHES
A
B
C
D
E
F
G
H
I
J
K
15.54 MAX.
0.8 (T.P.)
1.8 MAX.
1.55
7.70.3
0.97 MAX.
0.612 MAX.
0.0050.003
0.071 MAX.
0.3030.012
0.220
0.039 MAX.
NOTE
L
M
0.10
0.60.2
1.1
5.6
0.004
0.024
+0.008
0.009
Each lead centerline is located within 0.10
mm (0.004 inch) of its true position (T.P.) at
maximum material condition.
0.043
0.061
0.031 (T.P.)
0.20
+0.10
0.05
0.008
+0.004
0.002
N
0.10
0.004
0.014
+0.004
0.003
0.35
0.1250.075
+0.10
0.05
C
m
PD75P4308
4 9
12. RECOMMENDED SOLDERING CONDITIONS
Solder the
m
PD75P4308 under the following recommended conditions.
For the details on the recommended soldering conditions, refer to Information Document Semiconductor
Device Mounting Technology Manual (C10535E).
For the soldering methods and conditions other than those recommended, consult NEC.
Table 12-1. Soldering Conditions of Surface Mount Type
m
PD75P4308GS: 36-pin plastic shrink SOP (300 mil, 0.8-mm pitch)
Soldering method Soldering conditions Symbol
Infrared reflow Package peak temperature: 235C, Reflow time: 30 seconds or below IR35-107-2
(210C or higher), Number of reflow processes: 2 max., Exposure limit: 7 days
Note
(after that, prebaking is necessary at 125C for 10 hours)
VPS Package peak temperature: 215C, Reflow time: 40 seconds or below VP15-107-2
(200C or higher), Number of reflow processes: 2 max., Exposure limit: 7 days
Note
(after that, prebaking is necessary at 125C for 10 hours)
Wave soldering Solder temperature: 260C or below, Flow time: 10 seconds or below, WS60-107-1
Number of flow processes: 1
Preheating temperature: 120C or below (package surface temperature)
Exposure limit: 7 days
Note
(after that, prebaking is necessary at 125C for
10 hours)
Pin partial heating Pin temperature: 300C or below, Time: 3 seconds or below (per side of device)
Note The number of days for storage after the dry pack has been opened. Storage conditions are 25C and 65%
RH max.
Caution Do not use two or more soldering methods in combination (except the pin partial heating method).
m
PD75P4308
5 0
APPENDIX A. COMPARISON OF
m
m
m
m
m
PD750004, 754304, AND 75P4308 FUNCTIONS
(1/2)
Item
m
PD750004
m
PD754304
m
PD75P4308
Program memory
Mask ROM
Mask ROM
One-time PROM
0000H-0FFFH
0000H-0FFFH
0000H-1FFFH
(4096
8 bits)
(4096
8 bits)
(8192
8 bits)
Data memory
000H-1FFH
000H-0FFH
(512
4 bits)
(256
4 bits)
CPU
75XL CPU
Instruction
When main system
0.95, 1.91, 3.81, 15.3
m
s (@ 4.19 MHz)
execution time
clock is selected
0.67, 1.33, 2.67, 10.7
m
s (@ 6.0 MHz)
When subsystem
122
m
s
No subsystem clock
clock is selected
(@ 32.768 kHz)
I/O ports
CMOS input
8 (connections of on-chip pull-up resistors are software-specifiable: 7)
CMOS I/O
18 (connections of on-chip pull-up resistors are software-specifiable)
N-ch open-drain I/O
8 (on-chip pull-up resistors
4 (on-chip pull-up resistors
4 (No mask option)
(13-V withstand)
are specified by mask option) are specified by mask option)
Total
34
30 (No port 4 pin)
Timers
4 channels
3 channels
Basic interval timer/
Basic interval timer/watchdog timer
watchdog timer
8-bit timer/event counter 0 (fx/2
2
added)
8-bit timer/event counter
8-bit timer/event counter 1 (TI1, fx/2
2
added)
8-bit timer
(Can be used as a 16-bit timer/event counter)
Watch timer
Clock output (PCL)
F
, 524, 262, 65.5 kHz
(main system clock: @ 4.19 MHz)
F
, 750, 375, 93.8 kHz
(main system clock: @ 6.0 MHz)
BUZ output
Yes
No
Serial interface
Can support three modes
Can support two modes
3-wire serial I/O mode
3-wire serial I/O mode...MSB/LSB-first switchable
...MSB/LSB-first switchable
2-wire serial I/O mode
2-wire serial I/O mode
SBI mode
Watch mode register (WM)
Yes
No
System clock control register (SCC)
Sub-oscillator control register (SOS)
m
PD75P4308
5 1
(2/2)
Item
m
PD750004
m
PD754304
m
PD75P4308
Memory bank select register (MBS) Selectable from memory Fixed at memory bank 0
Stack bank select register (SBS)
banks 0 and 1
Timer/event counter mode register Bits 0, 1, and 7 are fixed at 0
(TM0, TM1)
Vectored interrupts External: 3, Internal: 4
Test inputs External: 1, Internal: 1 External: 1
Test enable flag (IEW) Yes No
Test request flag (IRQW)
Power supply voltage V
DD
= 2.2 to 5.5 V V
DD
= 1.8 to 5.5 V
Operating ambient temperature T
A
= 40 to +85C
Package 42-pin plastic shrink DIP 36-pin plastic shrink SOP (300 mil, 0.8-mm pitch)
(600 mil)
44-pin plastic QFP
(10
10 mm)
m
PD75P4308
5 2
APPENDIX B. DEVELOPMENT TOOLS
The following development tools are provided for system development using the
m
PD75P4308. In the 75XL series,
the common relocatable assembler is used together with the device file of each model.
RA75X relocatable assembler
Host machine
Part No. (name)
OS
Supply medium
PC-9800 Series
MS-DOS
TM
3.5" 2HD
m
S5A13RA75X
Ver.3.30 to
5" 2HD
m
S5A10RA75X
Ver.6.2
Note
IBM PC/AT
TM
Refer to OS for
3.5" 2HC
m
S7B13RA75X
or compatible
IBM PCs
5" 2HC
m
S7B10RA75X
Device file
Host machine
Part No. (name)
OS
Supply medium
PC-9800 Series
MS-DOS
3.5" 2HD
m
S5A13DF754304
Ver.3.30 to
5" 2HD
m
S5A10DF754304
Ver.6.2
Note
IBM PC/AT
Refer to OS for
3.5" 2HC
m
S7B13DF754304
or compatible
IBM PCs
5" 2HC
m
S7B10DF754304
Note Ver. 5.00 and above include a task swapping function, but this software is not able to use that function.
Remark Operations of the assembler and the device file are guaranteed only when using the host machine and
OS described above.
m
PD75P4308
5 3
PROM Write Tools
Hardware
PG-1500
A stand-alone system can be configured of a single-chip microcontroller with on-chip PROM
when connected to an auxiliary board (attached) and a programmer adapter (separately sold).
Alternatively, a PROM programmer can be operated on a host machine for programming.
In addition, typical PROMs in capacities ranging from 256 K to 4 Mbits can be programmed.
PA-75P4308GS
This is a PROM programmer adapter for the
m
PD75P4308GS. It can be used when connected
to a PG-1500.
Software
PG-1500 controller
Establishes serial and parallel connections between the PG-1500 and a host machine for host-
machine control of the PG-1500.
Host machine
Part No. (name)
OS
Supply medium
PC-9800 Series
MS-DOS
3.5" 2HD
m
S5A13PG1500
Ver.3.30 to
5" 2HD
m
S5A10PG1500
Ver.6.2
Note
IBM PC/AT
Refer to OS for
3.5" 2HD
m
S7B13PG1500
or compatible
IBM PCs
5" 2HC
m
S7B10PG1500
Note Ver. 5.00 and above include a task swapping function, but this software is not able to use that function.
Remark Operation of the PG-1500 controller is guaranteed only when using the host machine and OS described
above.
m
PD75P4308
5 4
Debugging Tools
In-circuit emulators (IE-75000-R and IE-75001-R) are provided as program debugging tools for the
m
PD75P4308.
Various system configurations using these in-circuit emulators are listed below.
Hardware
IE-75000-R
Note 1
The IE-75000-R is an in-circuit emulator to be used for hardware and software debugging
during development of application systems that use 75X or 75XL Series products. For
development of the
m
PD754304 subseries, the IE-75000-R is used with a separately sold
emulation board (IE-75300-R-EM) and emulation probe (EP-754304GS-R).
These products can be applied for highly efficient debugging when connected to a host
machine and PROM programmer.
The IE-75000-R can include a connected emulation board (IE-75000-R-EM).
IE-75001-R
The IE-75001-R is an in-circuit emulator to be used for hardware and software debugging
during development of application systems that use 75X or 75XL Series products.
The IE-75001-R is used with a separately sold emulation board (IE-75300-R-EM) and
emulation probe (EP-754304GS-R).
These products can be applied for highly efficient debugging when connected to a host
machine and PROM programmer.
IE-75300-R-EM
This is an emulation board for evaluating application systems that use the
m
PD754304
subseries. It is used in combination with the IE-75000-R or IE-75001-R in-circuit emulator.
EP-754304GS-R
This is an emulation probe for the
m
PD75P4308.
EV-9500GS-36
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
It includes a flexible board (EV-9500GS-36) to facilitate connections with various target
systems.
Software
IE control program
This program can control the IE-75000-R or IE-75001-R on a host machine when connected
to the IE-75000-R or IE-75001-R via an RS-232-C or Centronics interface.
Host machine
Part No. (name)
OS
Supply medium
PC-9800 Series
MS-DOS
3.5" 2HD
m
S5A13IE75X
Ver.3.30 to
5" 2HD
m
S5A10IE75X
Ver.6.2
Note 2
IBM PC/AT
Refer to OS for
3.5" 2HC
m
S7B13IE75X
or compatible
IBM PCs
5" 2HC
m
S7B10IE75X
Notes 1. This is a service part provided for maintenance purpose only.
2. Ver. 5.00 and above include a task swapping function, but this software is not able to use that function.
Remarks 1. Operation of the IE control program is guaranteed only when using the host machine and OS
described above.
2. The
m
PD754302, 754304, and 75P4308 are commonly referred to as the
m
PD754304 subseries.
m
PD75P4308
5 5
OS for IBM PCs
The following operating systems for the IBM PC are supported.
OS
Version
PC DOS
TM
Ver.5.02 to Ver.6.3
J6.1/V to J6.3/V
MS-DOS
Ver.5.0 to Ver.6.22
5.0/V to 6.2/V
IBM DOS
TM
J5.02/V
Caution Ver 5.0 and above include a task swapping function, but this software is not able to use that
function.
m
PD75P4308
5 6
APPENDIX C. RELATED DOCUMENTS
The related documents indicated in this publication may include preliminary versions.
However, preliminary versions are not marked as such.
Documents Related to Device
Document Name
Document Number
Japanese
English
m
PD754302, 754304 Data Sheet
U10797J
U10797E
m
PD75P4308 Data Sheet
U10909J
U10909E
(this document)
m
PD754304 User's Manual
U10123J
U10123E
m
PD754304 Instruction Table
IEM-5605
--
75XL Series Selection Guide
U10453J
U10453E
Documents Related to Development Tools
Document Name
Document Number
Japanese
English
Hardware
IE-75000-R/IE-75001-R User's Manual
EEU-846
EEU-1416
IE-75300-R-EM User's Manual
U11354J
U11354E
EP-754304GS-R User's Manual
U10677J
U10677E
PG-1500 User's Manual
EEU-651
EEU-1335
Software
RA75X Assembler Package
Operation
EEU-731
EEU-1346
User's Manual
Language
EEU-730
EEU-1363
PG-1500 Controller User's Manual
PC9800 Series (MS-DOS) base
EEU-704
EEU-1291
IBM PC/AT Series (PC DOS) base
EEU-5008
U10540E
Other Related Documents
Document Name
Document Number
Japanese
English
IC Package Manual
C10943X
Semiconductor Device Mounting Technology Manual
C10535J
C10535E
Quality Grades on NEC Semiconductor Devices
C11531J
C11531E
NEC Semiconductor Device Reliability/Quality Control System
C10983J
C10983E
Electrostatic Discharge (ESD) Test
MEM-539
--
Guide to Quality Assurance for Semiconductor Devices
MEI-603
MEI-1202
Microcomputer-Related Product Guide Third Party Products
U11416J
--
Caution The related documents listed above are subject to change without notice. Be sure to use the latest
documents for designing, etc.
m
PD75P4308
5 7
[MEMO]
m
PD75P4308
5 8
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction
of the gate oxide and ultimately degrade the device operation. Steps must
be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred. Environmental control must
be adequate. When it is dry, humidifier should be used. It is recommended
to avoid using insulators that easily build static electricity. Semiconductor
devices must be stored and transported in an anti-static container, static
shielding bag or conductive material. All test and measurement tools
including work bench and floor should be grounded. The operator should
be grounded using wrist strap. Semiconductor devices must not be touched
with bare hands. Similar precautions need to be taken for PW boards with
semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input
level may be generated due to noise, etc., hence causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of
CMOS devices must be fixed high or low by using a pull-up or pull-down
circuitry. Each unused pin should be connected to V
DD
or GND with a
resistor, if it is considered to have a possibility of being an output pin. All
handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Produc-
tion process of MOS does not define the initial operation status of the device.
Immediately after the power source is turned ON, the devices with reset
function have not yet been initialized. Hence, power-on does not guarantee
out-pin levels, I/O settings or contents of registers. Device is not initialized
until the reset signal is received. Reset operation must be executed imme-
diately after power-on for devices having reset function.
m
PD75P4308
5 9
NEC Electronics Inc. (U.S.)
Santa Clara, California
Tel: 800-366-9782
Fax: 800-729-9288
NEC Electronics (Germany) GmbH
Duesseldorf, Germany
Tel: 0211-65 03 02
Fax: 0211-65 03 490
NEC Electronics (UK) Ltd.
Milton Keynes, UK
Tel: 01908-691-133
Fax: 01908-670-290
NEC Electronics Italiana s.r.1.
Milano, Italy
Tel: 02-66 75 41
Fax: 02-66 75 42 99
NEC Electronics Hong Kong Ltd.
Hong Kong
Tel: 2886-9318
Fax: 2886-9022/9044
NEC Electronics Hong Kong Ltd.
Seoul Branch
Seoul, Korea
Tel: 02-528-0303
Fax: 02-528-4411
NEC Electronics Singapore Pte. Ltd.
United Square, Singapore 1130
Tel: 253-8311
Fax: 250-3583
NEC Electronics Taiwan Ltd.
Taipei, Taiwan
Tel: 02-719-2377
Fax: 02-719-5951
NEC do Brasil S.A.
Sao Paulo-SP, Brasil
Tel: 011-889-1680
Fax: 011-889-1689
NEC Electronics (Germany) GmbH
Benelux Office
Eindhoven, The Netherlands
Tel: 040-2445845
Fax: 040-2444580
NEC Electronics (France) S.A.
Velizy-Villacoublay, France
Tel: 01-30-67 58 00
Fax: 01-30-67 58 99
NEC Electronics (France) S.A.
Spain Office
Madrid, Spain
Tel: 01-504-2787
Fax: 01-504-2860
NEC Electronics (Germany) GmbH
Scandinavia Office
Taeby, Sweden
Tel: 08-63 80 820
Fax: 08-63 80 388
Regional Information
Some information contained in this document may vary from country to country. Before using any NEC
product in your application, please contact the NEC office in your country to obtain a list of authorized
representatives and distributors. They will verify:
Device availability
Ordering information
Product release schedule
Availability of related technical literature
Development environment specifications (for example, specifications for third-party tools and
components, host computers, power plugs, AC supply voltages, and so forth)
Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary
from country to country.
J96. 8
5 8
m
PD75P4308
No part of this document may be copied or reproduced in any form or by any means without the prior written consent
of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use of
such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property
arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in
its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment and
industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for
life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support
systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they
should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
The export of this product from Japan is regulated by the Japanese government. To export this product may be prohibited
without governmental license, the need for which must be judged by the customer. The export or re-export of this product
from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
MS-DOS is a trademark of Microsoft Corporation.
IBM DOS, PC/AT, and PC DOS are trademarks of International Business Machines Corporation.