5 GHz DIVIDE-BY-4
STATIC PRESCALER
FEATURES
WIDE OPERATING FREQUENCY RANGE:
f
IN
= 1.5 GHz to 5 GHz (T
A
= 25
C)
SINGLE SUPPLY VOLTAGE: V
DD
= +10 V
DIVISION RATIO OF 4
HIGH RELIABILITY HERMETICALLY SEALED
PACKAGE
GUARANTEED PERFORMANCE OVER AN AMBIENT
TEMPERATURE RANGE: -25
C to +75
C
PART NUMBER
UPG501B
PACKAGE OUTLINE
BF08
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
DD
Supply Current
mA
50
70
90
f
IN(U)
Upper Limit of Input Frequency
GHz
5.0
5.3
f
IN(L)
Lower Limit of Input Frequency
GHz
0.7
1.5
P
IN
Input Power,
f
IN
= 4.5 to 5 GHz
dBm
10.0
13.0
f
IN
= 1.5 to 4.5 GHz
dBm
6.0
13.0
P
OUT
Output Power at f
IN
= 5 GHz
dBm
-1.0
2.0
R
TH(CH-C)
Thermal Resistance (Channel to Case)
C/W
16
ELECTRICAL CHARACTERISTICS
(T
A
= -25
C to +75
C, V
DD
= 10 V, V
GG
= Open)
DESCRIPTION
The UPG501B is a GaAs divide-by-4 prescaler that is capable
of operating up to 5 GHz. It is intended to be used in frequency
synthesizers of microwave communications systems and
measurement equipment. The UPG501B is a static divider
with two (2) master-slave D-type flip-flops using Source-
Coupled-FET-Logic (SCFL). It operates from a single supply
voltage. The UPG501B is housed in a hermetically sealed 8-
lead ceramic flat package that is easy to use and provides high
reliability.
UPG501B
INPUT POWER vs. INPUT FREQUENCY
T
A
= -25C
T
A
= +25C
T
A
= +75C
V
DD
= +10 V
Recommended
Operating Region
0 1 2 3 4 5 6 7
+20
+15
+10
+5
0
-5
-10
-15
-20
Input Frequency, f (GHz)
Input Power, P
IN
(dBm)
California Eastern Laboratories
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DD
Supply Voltage
V
+12
I
DD
Supply Current
mA
150
P
T
Total Power Dissipation
2
W
1.5
P
IN
Input Power
dBm
+20
T
OP
Operating Temperature
C
-65 to +125
T
STG
Storage Temperature
C
-65 to +175
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage.
2. T
C
125
C
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
UPG501B
TEST CIRCUIT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Note: Because of the high internal gain and gain compression of the
UPG501B, the device is subject to self-oscillation in the absence of an RF
input signal. This self-oscillation can be suppressed by either of the following
means:
Add a shunt resistor to the RF input line. Typically a resistor
value between 50 and 1000 ohms will suppress the self-
oscillation (see the test circuit).
Apply a negative voltage through a 1000 ohm resistor to the
normally open VGG connection. Typically voltages between 0 and
-9 volts will suppress the self-oscillation.
Both of these approaches will reduce the input sensitivity of the device (by as
much as 3 dB for a 50 ohm shunt resistor), but otherwise have no effect on
the reliability or other electrical characteristics of the device.
10
100
1K
10K
100K
Offset from Carrier (Hz)
SSB Phase Noise (dBc/Hz)
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
1M
SSB PHASE NOISE vs.
OFFSET FROM CARRIER
f
IN
= 3.41 GHz, T
A
= 25
C
T
A
= -25C
T
A
= +25C
T
A
= +75C
+20
+15
+10
+5
0
-5
-10
-15
-20
0
1
2
3
4
5
6
7
Input Frequency, f
IN
(GHz)
V
DD
= +10V
Output Power, P
OUT
(dBm)
OUTPUT POWER vs. INPUT FREQUENCY
Case Temperature, T
C
(
C)
Total Power Dissipation, P
T
(W)
Tcase MAX = 125C
0 50 100 110 150 200 250
2.5
2.0
1.5
1.0
0.5
0
OUTLINE DIMENSIONS
(Units in mm)
UPG501B
PACKAGE OUTLINE BF08
LEAD
CONNECTIONS:
5. INPUT
6. V
GG
7. NC*
8. GND
FLANGE, GND
1. OUTPUT
2. NC*
3. NC*
4. V
DD
7.00.5
2.6
4.40.2
10.40.5
1.7 MAX
1.27
0.1
1.27
0.1
1.27
0.1
8
7
6
5
1
2
3
4
0.4
5.00.2
0.2
+0.05
-0.02
POWER DERATING CURVE
* No connection
OUT
1000 pF
1000 pF
V
DD
(+10 V)
1
2
3
4
8
7
6
5
1000 pF
IN
1000 pF
See Note
V
GG
(Normally Open)
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -4/97
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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