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Электронный компонент: EC10QS10

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OUTLINE DRAWING








Maximum Ratings
Approx Net Weight:0.06g
Rating Symbol EC10QS10 Unit
Repetitive Peak Reverse Voltage
V
RRM
100
V
0.89 Ta=25
C *1
Average Rectified Output Current
I
O
1.0 Ta=52
C *2
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
I
F(RMS)
1.57
A
Surge Forward Current
I
FSM
20
50Hz Half Sine Wave,1cycle
Non-repetitive
A
Operating JunctionTemperature Range
T
jw
-40 to +150
C
Storage Temperature Range
T
stg
-40 to +150
C

Electrical
Thermal Characteristics
Characteristics Symbol
Conditions
Min.
Typ.
Max.
Unit
Peak Reverse Current
I
RM
Tj= 25
C, V
RM
= V
RRM
- - 0.5
mA
Peak Forward Voltage
V
FM
Tj= 25
C, I
FM
= 1.0A
- -
0.85 V
*1 -
-
157
Thermal Resistance
Rth
(j-a)
Junction to Ambient
*2 -
-
108
C
/W
*1 Glass Epoxy Substrate Mounted
*2 Alumina Substrate Mounted
Soldering Lands=2x2mm,Both Sides












SBD
Type
Type
Type
Type
:
EC10QS10
EC10QS10
EC10QS10
EC10QS10
FEATURES
FEATURES
FEATURES
FEATURES
* Miniature Size,Surface Mount Device
* Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* 30 Volts through 100Volts Types Available
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly
EC10QS10 OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
EC10QS10
0
0.2
0.4
0.6
0.8
1.0
1.2
INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
0.2
0.5
1
2
5
INSTANTANEOUS FORWARD CURRENT (A)
Tj=25C
Tj=150C
AVERAGE FORWARD POWER DISSIPATION
0
0.4
0.8
1.2
1.6
AVERAGE FORWARD CURRENT (A)
0
0.2
0.4
0.6
0.8
1.0
1.2
AVERAGE FORWARD POWER DISSIPATION (W)
EC10QS10
0
180
CONDUCTION ANGLE
HALF SINE WAVE
D.C.
RECT 180
RECT 120
RECT 60
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
EC10QS10
Tj= 150 C
0
20
40
60
80
100
120
PEAK REVERSE VOLTAGE (V)
1
2
5
PEAK REVERSE CURRENT (mA)
AVERAGE REVERSE POWER DISSIPATION
EC10QS10
0
20
40
60
80
100
120
REVERSE VOLTAGE (V)
0
0.10
0.20
0.30
0.40
AVERAGE REVERSE POWER DISSIPATION (W)
D.C.
RECT 300
RECT 240
RECT 180
HALF SINE WAVE
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
EC10QS10
A lum ina S ubs tra te M ou nted (La nd= 22m m),V
R M
= 100V
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (C)
0
0.4
0.8
1.2
1.6
AVERAGE FORWARD CURRENT (A)
0
180
CONDUCTION ANGLE
HALF SINE WAVE
D.C.
RECT 180.
RECT 120.
RECT 60.
AVERAGE FORWARD CURRENT VS. LEAD TEMPERATURE
EC10QS10
V
R M
= 100V
0
25
50
75
100
125
150
LEAD TEMPERATURE (C)
0
0.4
0.8
1.2
1.6
AVERAGE FORWARD CURRENT (A)
0
180
CONDUCTION ANGLE
HALF SINE WAVE
D.C.
RECT 180
RECT 120
RECT 60
SURGE CURRENT RATINGS
EC10QS10
f=50Hz,Half Sine Wave,Non-Repetitive,No Load
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
0
4
8
12
16
20
SURGE FORWARD CURRENT (A)
0.02s
IFSM
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
EC10QS10
Tj=2 5 C,V m = 20m V
RM S
,f= 100 kHz ,Ty pica l V alue
0.5
1
2
5
10
20
50
100
200
REVERSE VOLTAGE (V)
5
10
20
50
100
JUNCTION CAPACITANCE (pF)