FRD
Type
KSF30A20E
OUTLINE DRAWING
/ Maximum Ratings
Approx Net Weight:6g
Rating
Symbol
KSF30A20E
Unit
Repetitive Peak Reverse Voltage
V
RRM
200
V
Average Rectified Output Current
I
O
30
Tc=101
50 Hz
Half Sine Wave Resistive Load
A
RMS Forward Current
I
F(RMS)
47
A
Surge Forward Current
I
FSM
400
50 Hz , 1,
Half Sine Wave,1cycle,Non-repetitive
A
Operating JunctionTemperature Range
Tjw
- 40 + 150
Storage Temperature Range
Tstg
- 40 + 150
Mounting torque
0.5
Recommended value
Nm
(F R D)
Construction: Diffusion-type Silicon Diode
Application : High Frequency Rectification
/ Electrical Thermal Characteristics
Characteristics
Symbol
Conditions
Mni. Typ. Max.
Unit
Peak Reverse Current
I
RM
Tj= 25 , V
RM
= V
RRM
-
-
25
A
*
Peak Forward Voltage
V
FM
Tj= 25 , I
FM
= 30 A
-
-
0.98
V
Reverse Recovery Time
trr
I
FM
= 10
A,
-di/dt= 50 A/s, Ta= 25
-
-
50
ns
Thermal Resistance
Rth(j-c)
Junction to Case
-
-
1.4
/W
FORWARD CURRENT VS. VOLTAGE
KSF30A20B/KSF30A20E
0
0.4
0.8
1.2
1.6
INSTANTANEOUS FORWARD VOLTAGE (V)
2
5
10
20
50
100
200
INSTANTANEOUS FORWARD CURRENT (A)
Tj=25C
Tj=150C
AVERAGE FORWARD POWER DISSIPATION
0
10
20
30
40
50
AVERAGE FORWARD CURRENT (A)
0
10
20
30
40
AVERAGE FORWARD POWER DISSIPATION (W)
KSF30A20B/KSF30A20E
0
180
CONDUCTION ANGLE
HALF SINE WAVE
D.C.
RECT 180
RECT 120
RECT 60
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
-
KSF30A20B/KSF30A20E
0
25
50
75
100
125
150
CASE TEMPERATURE (C)
0
10
20
30
40
50
AVERAGE FORWARD CURRENT (A)
0
180
CONDUCTION ANGLE
HALF SINE WAVE
D.C.
RECT 180
RECT 120
RECT 60
SURGE CURRENT RATINGS
KSF30A20B/KSF30A20E
f=50Hz,Half Sine Wave,Non-Repetitive,No Load
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
0
100
200
300
400
SURGE FORWARD CURRENT (A)
0.02s
IFSM
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