THYRISTOR MODULE
Maximum Ratings
Parameter
Conditions
Max Rated
Value
Unit
Tc=108
C(Non-Bias)
Average Rectified Output Current
I
O(AV)
3 Phase Full
Wave Rectified Tc=83
C(Biased)
50 A
Operating JunctionTemperature Range
Tjw
Tj>125
C, Can not be Biased for Thyristor
-40 to +150
C
Storage Temperature Range
Tstg
-40 to +125
C
Isoration Voltage
Viso
Base Plate to Terminals, AC1min.
2500 V
Case mounting
Greased
M5 Screw
2.4 to 2.8
Mounting torque
Terminals
Ftor
M5 Screw
2.4 to 2.8
N
m
Thermal Characteristics
Characteristics
Symbol
Test Conditions
Maximum Value.
Unit
Thermal Resistance
Rth(c-f) Case to Fin,Total,Greased
0.06
C/W
Maximum Ratings
Grade
Parameter
Symbol
PGH5016AM
Unit
Repetitive Peak Reverse Voltage *1
V
RRM
1600
Non Repetitive Peak Reverse Voltage *1
V
RSM
1700
V
Parameter
Symbol
Conditions
Max Rated
Value
Unit
Surge Forward Current *1
I
FSM
50 Hz Half Sine Wave,1Pulse,
Non-Repetitive
600 A
I Squared t *1
I
2
t
2msec to 10msec
1800
A
2
s
Allowable Operating Frequancy
f
400
Hz
*1 Value Per 1 Arm
FEATURES
* Isolated Base
* 3 Phase Converter with Rush-Current
Controllable Thyristor
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Converter For UPS , VVVF and Servo
Motor Drive Amplifier
P G H 5 0 1 6 A M
P G H 5 0 1 6 A M
P G H 5 0 1 6 A M
P G H 5 0 1 6 A M
OUTLINE DRAWING
5 0 A / 1 6 0 0 V
Pert of Diode Bridge and Thyristor
Part of Diode Bridge (6 dies)
Nut
Approx Net Weight:200g
Electrical
Thermal Characteristics
Characteristics
Symbol
Test Conditions
Maximum Value.
Unit
Peak Reverse Current *1
I
RM
V
RM
= V
RRM,
Tj= 125
C
15
mA
Peak Forward Voltage *1
V
FM
I
FM
= 50A, Tj=25
C
1.30
V
Thermal Resistance
Rth(j-c) Junction to Case (Total)
0.27
C/W
*1 Value Per 1 Arm
Maximum Ratings
Grade
Parameter
Symbol
PGH5016AM
Unit
Repetitive Peak Off-State Voltage
V
DRM
1600
Non Repetitive Peak Off-State Voltage
V
DSM
1700
V
Repetitive Peak Reverse Voltage
V
RRM
1600
Non Repetitive Peak Reverse Voltage
V
RSM
1700
V
Parameter
Conditions
Max Rated
Value
Unit
Surge On-State Current
I
TSM
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
600 A
I Squared t
I
2
t
2msec to 10msec
1800
A
2
s
Critical Rate of Turned-On Current
di/dt
V
D
=2/3V
DRM
, I
TM
=2
I
O
, Tj=125
C
I
G
=200mA, di
G
/dt=0.2A/
s
100
A/
s
Peak Gate Power
P
GM
5
W
Average Gate Power
P
G(AV)
1
W
Peak Gate Current
I
GM
2
A
Peak Gate Voltage
V
GM
10
V
Peak Gate Reverse Voltage
V
RGM
5
V
Electrical
Thermal Characteristics
Maximum Value.
Characteristics
Symbol
Test Conditions
Min. Typ. Max.
Unit
Peak Off-State Current
I
DM
V
DM
= V
DRM,
Tj= 125
C
15
mA
Peak Reverse Current
I
RM
V
RM
= V
RRM,
Tj= 125
C
15
mA
Peak On-State Voltage
V
TM
I
TM
= 50A, Tj=25
C
1.12
V
Tj=-40
C
200
Tj=25
C
100
Gate Current to Trigger
I
GT
V
D
=6V,I
T
=1A
Tj=125
C
50
mA
Tj=-40
C
4
Tj=25
C
2.5
Gate Voltage to Trigger
V
GT
V
D
=6V,I
T
=1A
Tj=125
C
2
V
Gate Non-Trigger Voltage
V
GD
V
D
=2/3V
DRM
Tj=125
C
0.25 V
Critical Rate of Rise of Off-State Voltage
dv/dt V
D
=2/3V
DRM
Tj=125
C
500 V/
s
Turn-Off Time
tq
I
TM
=I
O
,V
D
=2/3V
DRM
dv/dt=20V/
s, V
R
=100V
-di/dt=20A/
s, Tj=125
C
150
s
Turn-On Time
tgt
6
s
Delay Time
td
2
s
Rise Time
tr
V
D
=2/3V
DRM
Tj=125
C
I
G
=200mA, di
G
/dt=0.2A/
s
4
s
Latching Current
I
L
Tj=25
C
100
mA
Holding Current
I
H
Tj=25
C
80
Thermal Resistance
Rth(j-c) Junction to Case
0.8
C/W
Part of Thyristor (1 die)
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