TENTATIVE
IGBT
MODULE
Single 1200A 1200V
PHMB1200B12
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS
(Tc=25
C)
Item Symbol
PHMB1200B12
Unit
Collector-Emitter Voltage
V
CES
1200 V
Gate - Emitter Voltage
V
GES
+/ - 20
V
DC I
C
1200
Collector Current
1 ms
I
CP
2400
A
Collector Power Dissipation
P
C
5600 W
Junction Temperature Range
T
j
-40 to +150
C
Storage Temperature Range
T
stg
-40 to +125
C
Isolation Voltage Terminal to Base AC, 1 min.)
V
ISO
2500 V
Module Base to Heat sink
3
M4 1.4
Mounting Torque
Bus Bar to Main Terminals
F
TOR
M8 10.5
N
m
4- fasten- tab No 110
Dimension(mm)
Approximate Weight
: 1,200g
ELECTRICAL CHARACTERISTICS
(Tc=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Emitter Cut-Off Current
I
CES
V
CE
=1200V,V
GE
=0V -
-
24
mA
Gate-Emitter Leakage Current
I
GES
V
GE
=+/- 20V,V
CE
=0V -
-
1.0
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=1200A,V
GE
=15V -
1.9
2.4
V
Gate-Emitter Threshold Voltage
V
GE(th)
V
CE
=5V,I
C
=400mA 4.0
-
8.0
V
Input Capacitance
Cies
V
CE
=10V,V
GE
=0V,f=1MHz -
100000
-
pF
Rise Time
t
r
- 0.25
0.45
Turn-on Time
t
on
- 0.40
0.70
Fall Time
t
f
- 0.25
0.35
Switching Time
Turn-off Time
t
off
V
CC
= 600V
R
L
= 0.5 ohm
R
G
= 0.33 ohm
V
GE
= +/- 15V
- 1.00
1.50
s
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
C)
Item Symbol
Rated
Value
Unit
DC I
F
1200
Forward Current
1 ms
I
FM
2400
A
Characteristic Symbol Test
Condition Min.
Typ.
Max.
Unit
Peak Forward Voltage
V
F
I
F
=1200A,V
GE
=0V -
1.9
2.4
V
Reverse Recovery Time
t
rr
I
F
=1200A,V
GE
=-10V,di/dt=2400A/
s
- 0.4 0.5
s
THERMAL CHARACTERISTICS
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
IGBT -
-
0.022
Thermal Impedance
DIODE
R
th(j-c)
Junction to Case
- -
0.043
C/W
TENTATIVE
PHMB1200B12
0
2
4
6
8
10
0
400
800
1200
1600
2000
2400
Collector to Emitter Voltage V
CE
(V)
Co
l
l
e
c
t
o
r
Cu
r
r
e
n
t
I
C
(A
)
Fig.1- Output Characteristics
(Typical)
T
C
=25
10V
9V
12V
15V
V
GE
=20V
8V
7V
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
(V)
C
o
l
l
e
c
t
or
t
o
E
m
i
t
t
e
r
Vol
t
a
g
e
V
C
E
(V
)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
T
C
=25
1200A
I
C
=600A
2400A
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
(V)
C
o
l
l
e
c
t
or
t
o
E
m
i
t
t
e
r
Vol
t
a
g
e
V
C
E
(V
)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
I
C
=600A
1200A
2400A
T
C
=125
0
2
4
6
8
10
12
14
16
0
2000
4000
6000
8000
10000
0
100
200
300
400
500
600
700
800
Total Gate Charge Qg
(nC)
C
o
ll
e
c
t
o
r
t
o
E
m
it
te
r
V
o
ltag
e
V
C
E
(V
)
Ga
t
e
t
o
E
m
i
t
t
e
r
V
o
l
t
a
g
e
V
GE
(V
)
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
V
CE
=600V
400V
200V
R
L
=0.5
T
C
=25
0.1
0.2
0.5
1
2
5
10
20
50
100
200
200
500
1000
2000
5000
10000
20000
50000
100000
200000
500000
Collector to Emitter Voltage V
CE
(V)
C
a
p
a
ci
t
a
n
ce
C
(p
F
)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
Cies
Coes
Cres
V
GE
=0V
f=1MH
Z
T
C
=25
0
200
400
600
800
1000
1200
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Collector Current I
C
(A)
Sw
i
t
c
h
i
n
g
T
i
me
t
(
s)
Fig.6- Collector Current vs. Switching Time
(Typical)
t
OFF
t
f
t
r
t
ON
V
CC
=600V
R
G
= 0.33
V
GE
=15V
T
C
=25
.
TENTATIVE
PHMB1200B12
0.1
0.2
0.5
1
2
5
10
20
0.05
0.1
0.2
0.5
1
2
5
10
Series Gate Impedance R
G
()
S
w
i
t
chi
ng
T
i
m
e
t
(
s
)
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
V
CC
=600V
I
C
=1200A
V
GE
=15V
T
C
=25
tf
tr
ton
toff
0
1
2
3
4
0
400
800
1200
1600
2000
2400
Forward Voltage V
F
(V)
F
o
r
w
a
r
d
C
u
r
r
ent
I
F
(A
)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
T
C
=25
T
C
=125
0
1200
2400
3600
4800
6000
7200
100
200
500
1000
2000
-di/dt
(A/s)
P
e
a
k
R
ev
er
s
e
R
e
c
o
v
er
y
C
u
r
r
e
n
t
I
R
r
M
(
A
)
R
e
ve
rs
e
R
e
c
o
ve
ry
T
i
m
e
tr
r
(n
s
)
Fig.9- Reverse Recovery Characteristics
(Typical)
I
F
=1200A
T
C
=25
I
RrM
trr
0
400
800
1200
1600
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
5000
Collector to Emitter Voltage V
CE
(V)
C
o
l
l
ect
o
r
C
ur
r
ent
I
C
(
A
)
Fig.10- Reverse Bias Safe Operating Area
(Typical)
R
G
=0.33
V
GE
=15V
T
C
125
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
1
1x10
-4
2x10
-4
5x10
-4
1x10
-3
2x10
-3
5x10
-3
1x10
-2
2x10
-2
5x10
-2
1x10
-1
2x10
-1
Time t
(s)
T
r
a
n
s
i
e
n
t
T
her
m
a
l
I
m
p
e
d
a
nc
e
R
t
h
(J
-
C
)
(/
W
)
Fig.11- Transient Thermal Impedance
T
C
=25
1 Shot Pulse
FRD
IGBT
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