ChipFind - документация

Электронный компонент: PT200S12

Скачать:  PDF   ZIP
DIODE



MODULE
200A/1200V/1600V



Maximum Ratings
Approx Net Weight:370g
Type / Grade
Parameter
Parameter
Parameter
Parameter
Symbol
PT200S12 PT200S16
Unit
Repetitive Peak Reverse Voltage *1
V
RRM
1200
1600
Non Repetitive Peak Reverse Voltage *1
V
RSM
1300
1750
V
Parameter
Parameter
Parameter
Parameter
Conditions
Conditions
Conditions
Conditions
Max Rated
Max Rated
Max Rated
Max Rated
Value
Value
Value
Value
Unit
Average Rectified Output Current
I
O(AV)
3-Phase Full Wave Rectified
Tc=Tt(Terminal)=72
C
200 A
Surge Forward Current *1
I
FSM
50 Hz Half Sine Wave,1Pulse
Non-repetitive
1850 A
I Squared t *1
I
2
t
2msec to 10msec
170000
A
2
s
Operating JunctionTemperature Range
Tjw
-40 to +150
C
Storage Temperature Range
Tstg
-40 to +125
C
Isoration Voltage
Viso
Base Plate to Terminals, AC1min
2500 V
Case mounting
Greased
M5 Screw
2.4 to 2.8
Mounting torque
Terminals
Ftor
M5
2.4 to 2.8
N
m
Electrical
Thermal Characteristics
Characteristics
Symbol
Test Conditions
Max. Unit
Peak Reverse Current *1
I
RM
V
RM
= V
RRM,
Tj= 150
C
15 mA
Peak Forward Voltage *1
V
FM
I
FM
= 200A, Tj=25
C
1.35 V
Rth(j-c) Junction to Case (Total)
0.1
Thermal Resistance
Rth(c-f)
Base Plate to Heat Sink with Thermal
Compound (Total)
0.06
C/W
*1: Value Per 1Arm





FEATURES
* Isolated Base
* 3 Phase Bridge Circuit
* Designed Power Circuit Board
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PT200S12 PT200S16
PT200S12 PT200S16
PT200S12 PT200S16
PT200S12 PT200S16
OUTLINE DRAWING
PT200Sxx OUTLINE DRAWING (Dimensions in mm)