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Электронный компонент: PTMB100A6C

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Under development
IGBT SP
series
Six
Six
Six
Six----Pack 100A 600V
Pack 100A 600V
Pack 100A 600V
Pack 100A 600V
PTMB100A6C
PTMB100A6C
PTMB100A6C
PTMB100A6C
CIRCUIT OUTLINE DRAWING
















MAXMUM RATINGS
(Tc=25
C)
Item Symbol
PTMB100A6C
Unit
Collector-Emitter Voltage
V
CES
600 V
Gate - Emitter Voltage
V
GES
+/
-
20 V
DC I
C
100
Collector Current
1 ms
I
CP
200
A
Collector Power Dissipation
P
C
TBD
W
Junction Temperature Range
T
j
-40 to +150
C
Storage Temperature Range
T
stg
-40 to +125
C
Isolation Voltage Terminal to Base AC, 1 min.)
V
ISO
2500
V
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
F
TOR
2
N
m
ELECTRICAL CHARACTERISTICS
(Tc=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Emitter Cut-Off Current
I
CES
V
CE
=600V,V
GE
=0V -
-
1.0
mA
Gate-Emitter Leakage Current
I
GES
V
GE
=+/- 20V,V
CE
=0V -
-
1.0
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100A,V
GE
=15V -
2.1
2.6
V
Gate-Emitter Threshold Voltage
V
GE(th)
V
CE
=5V,I
C
=100mA 4.0
-
8.0
V
Input Capacitance
Cies
V
CE
=10V,V
GE
=0V,f=1MHz -
10000
-
pF
Rise Time
t
r
-
0.15
0.3
Turn-on Time
t
on
-
0.25
0.4
Fall Time
t
f
-
0.2
0.35
Switching Time
Turn-off Time
t
off
V
CC
= 300V
R
L
= 3 ohm
R
G
= 7.5 ohm
V
GE
= +/- 15V
- 0.45
0.7
s
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
C)
Item Symbol
Rated
Value
Unit
DC I
F
100
Forward Current
1 ms
I
FM
200
A
Characteristic Symbol Test
Condition Min.
Typ.
Max.
Unit
Peak Forward Voltage
V
F
I
F
=100A,V
GE
=0V -
1.9
2.4
V
Reverse Recovery Time
t
rr
I
F
=100A,V
GE
=-10V,di/dt=100A/
s
- 0.15
0.25
s
THERMAL CHARACTERISTICS
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
IGBT -
-
TBD
Thermal Impedance
DIODE
R
th(j-c)
Junction to Case
- -
TBD
C/W
Dimension(mm)
Approximate Weight : 330g