THYRISTOR
Type
TSN10A80
TSN10A80
TSN10A80
TSN10A80
Absolute Maximum Ratings
Rating
Symbol
Conditions
Max. Rated Value
Unit
Repetitive Peak off-state Voltage
V
DRM
Tj=25
C
800
V
Repetitive Peak On-State Current *
I
TRM
Tc
100
C, V
DM
400V
I
G
80mA, dig/dt 0.5A/
s
tw
1.0
sdi/dt
1500A/
s
duty
0.005
500 A
Repetitive Peak Forward Current *
I
FRM
Tc
100
C, tw
1.0
s
duty
0.005
500 A
Critical Rate of Rise of Off-State
Voltage
Permissible Rate of Down of
On-State Current *
di/dt
Tc
100
C, V
DM
400V
I
G
80mA, dig/dt 0.5A/
s
I
TM
500A,
tw
1.0
s
50Hz, 1min., without Cooling Fin
1500
A/
s
Peak Gate Power
P
GM
f 50Hz, duty 10
5 W
Average Gate Power
P
G(AV)
0.5
W
Peak Forward Gate Current
I
GM
f 50Hz, duty 10
2 A
Peak Forward Gate Voltage
V
GM
10
V
Peak Reverse Gate Voltage
V
RGM
5
V
Operating Junction Temperature Range
Tjw
-40 to +125
C
Storage Temperature Range
Tstg
-40 to +150
C
* notes : Test Circuit & Current Wave Form
0.5
I
TM
t
tw
I
TM
di/dt = 0.4
I
TM
/t
0.1
I
TM
R SW
L
V
DM
C
Thyristor Sample
10A 800V TO-262
Cnstruction : Planner Structure Reverse Conducting
Futures : High V
DRM
& Permissonable di/dt
Application : Stater for HID Lump Bullust Circuit
weight : 1.45g
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