100323
Low Power Hex Bus Driver
General Description
The 100323 is a monolithic device containing six bus drivers
capable of driving terminated lines with terminations as low
as 25
. To reduce crosstalk, each output has its own re-
spective ground connection. Transition times were designed
to be longer than on other F100K devices. The driver itself
performs the positive logic AND of a data input (D
1
D
6
) and
the OR of two select inputs (E and either DE
1
, DE
2
, or DE
3
).
Enabling of data is possible in multiples of two, i.e., 2, 4 or all
6 paths. All inputs have 50 k
pull-down resistors.
The output voltage LOW level is designed to be more nega-
tive than normal ECL outputs (cut off state). This allows an
emitter-follower output transistor to turn off when the termi-
nation supply is -2.0V and thus present a high impedance to
the data bus.
Features
n
50% power reduction of the 100123
n
2000V ESD protection
n
-4.2V to -5.7V operating range
n
Drives 25
load
Logic Symbol
Pin Names
Description
D
1
D
6
Data Inputs
DE
1
DE
3
Dual Enable Inputs
E
Common Enable Input
O
1
O
6
Data Outputs
DS100312-7
August 1998
100323
Low
Power
Hex
Bus
Driver
1998 National Semiconductor Corporation
DS100312
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Connection Diagrams
Logic Diagram
Truth Table
E
DE
n
D
n
D
n+1
O
n
O
n+1
L
L
X
X
Cutoff
Cutoff
X
H
L
L
Cutoff
Cutoff
X
H
L
H
Cutoff
H
X
H
H
L
H
Cutoff
X
H
H
H
H
H
H
X
L
L
Cutoff
Cutoff
H
X
L
H
Cutoff
H
H
X
H
L
H
Cutoff
H
X
H
H
H
H
H = High
Cutoff = Lower-than-LOW state
L = Low
X = Don't Care
24-Pin DIP
DS100312-3
24-Pin Quad Cerpak
DS100312-4
DS100312-1
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2
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature
-65C to +150C
Maximum Junction Temperature
Ceramic
+175C
V
EE
Pin Potential to Ground Pin
-7.0V to +0.5V
Input Voltage (DC)
V
EE
to +0.5V
Output Current (DC Output High)
-50 mA
ESD
2000V
Recommended Operating
Conditions
Case Temperature
Military
-55C to +125C
Supply Voltage (V
EE
)
-5.7V to -4.2V
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE
= -4.2V to -5.7V, V
CC
= V
CCA
= GND, T
C
= -55C to +125C
Symbol
Parameter
Min
Max
Units
T
C
Conditions
Notes
V
OH
Output HIGH
-1025
-870
mV
0C to +125C
V
IN
= V
IH (max)
Loading with
(Notes 3, 4, 5)
Voltage
-1085
-870
mV
-55C
or V
IL (min)
25
to -2.0V
V
OHC
Output HIGH
-1035
mV
0C to +125C
V
IN
= V
IH (min)
or V
IL (max)
Loading with
25
to -2.0V
(Notes 3, 4, 5)
Voltage
-1085
mV
-55C
V
OLC
Output LOW
-1610
mV
0C to +125C
Voltage
-1555
MV
-55C
V
OLZ
Cut-Off LOW
-1950
mV
0C to +125C
V
IN
= V
IH (min)
Loading with
(Notes 3, 4, 5)
Voltage
-1850
-55C
or V
IL (max)
25
to -2.0V
V
IH
Input HIGH
-1165
-870
mV
-55C to +125C
Guaranteed HIGH Signal
(Notes 3, 4, 5, 6)
Voltage
for All Inputs
V
IL
Input LOW
-1830
-1475
mV
-55C to +125C
Guaranteed LOW Signal
(Notes 3, 4, 5, 6)
Voltage
for All Inputs
I
IL
Input LOW
Current
0.50
A
-55C to +125C
V
EE
= 4.2V, V
IN
= V
IL (min)
(Notes 3, 4, 5)
I
IH
Input HIGH
240
A
0C to +125C
V
EE
= -5.7V, V
IN
= V
IH (max)
(Notes 3, 4, 5)
Current
340
A
-55C
I
EE
Power Supply
Inputs Open
Current
-155
-53
mA
-55C to +125C
V
EE
= -4.2V to -5.7V
(Notes 3, 4, 5)
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals -55C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides "cold start" specs which can be considered a worst case
condition at cold temperatures.
Note 4: Screen tested 100% on each device at -55C, +25C, and +125C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at -55C, +25C, and +125C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing V
OH
/V
OL
.
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AC Electrical Characteristics
V
EE
= -4.2V to -5.7V, V
CC
= V
CCA
= GND
Symbol
Parameter
T
C
= -55C
T
C
= +25C
T
C
= +125C
Units
Conditions
Min
Max
Min
Max
Min
Max
t
PZH
Propagation Delay
0.70
3.70
1.10
3.60
1.20
3.60
ns
Figures 1, 2
t
PHZ
Data to Output
0.50
3.60
1.10
3.10
1.20
3.50
t
PZH
Propagation Delay
0.60
3.60
1.10
3.60
1.30
3.80
ns
t
PHZ
Data Enable to Output
1.00
4.20
1.50
3.60
1.60
4.00
t
PZH
Propagation Delay
0.70
3.60
1.00
3.50
1.20
3.60
ns
t
PHZ
Common Enable to Output
0.90
4.00
1.40
3.40
1.40
3.80
t
TZH
Transition Time
0.20
2.00
0.20
2.00
0.20
2.00
ns
t
THZ
20% to 80%, 80% to 20%
0.20
1.80
0.20
1.60
0.20
1.60
Note 7: The specified limits represent the "worst case" value for the parameter. Since these "worst case" values normally occur at the temperature extremes, ad-
ditional noise immunity and guard banding can be achieved by decreasing the allowable system operating ranges.
Note 8: Conditions for testing shown in the tables are chosen to guarantee operation under "worst case" conditions.
Test Circuitry
DS100312-5
Notes:
V
CC
, V
CCA
= +2V, V
EE
= -2.5V
L1 and L2 = equal length 50
impedance lines
R
T
= 50
terminator internal to scope
Decoupling 0.1 F from GND to V
CC
and V
EE
All unused outputs are loaded with 25
to GND
C
L
= Fixture and stray capacitance
3 pF
Pin numbers shown are for flatpak; for DIP see logic symbol
FIGURE 1. AC Test Circuit
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Timing Waveform
DS100312-6
FIGURE 2. Propagation Delay and Transition Times
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