Discrete POWER & Signal
Technologies
N
High Conductance Low Leakage Diode
Sourced from Process 1M.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
W
IV
Working Inverse Voltage
456/A
457/A
458/A
459/A
25
60
125
175
V
V
V
V
I
O
Average Rectified Current
200
mA
I
F
DC Forward Current
500
mA
i
f
Recurrent Peak Forward Current
600
mA
i
f(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
A
T
stg
Storage Temperature Range
-65 to +200
C
T
J
Operating Junction Temperature
175
C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
1N / FDLL 456/A - 459/A
P
D
Total Device Dissipation
Derate above 25
C
500
3.33
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
300
C/W
1N/FDLL 456/A - 1N/FDLL 459/A
1N/FDLL 456/A / 457/A / 458/A / 459/A
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
COLOR BAND MARKING
DEVICE
1ST BAND 2ND BAND
FDLL456
BROWN
WHITE
FDLL456A
BROWN
WHITE
FDLL457
RED
BLACK
FDLL457A
RED
BLACK
FDLL458
RED
BROWN
FDLL458A
RED
BROWN
FDLL459
RED
RED
FDLL459A
RED
RED
Symbol
Parameter
Test Conditions
Min
Max
Units
B
V
Breakdown Voltage
456/A
457/A
458/A
459/A
I
R
= 100
A
I
R
= 100
A
I
R
= 100
A
I
R
= 100
A
30
70
150
200
V
V
V
V
I
R
Reverse Current
456/A
457/A
458/A
459/A
V
R
= 25 V
V
R
= 25 V, T
A
= 150
C
V
R
= 60 V
V
R
= 60 V, T
A
= 150
C
V
R
= 125 V
V
R
= 125 V, T
A
= 150
C
V
R
= 175 V
V
R
= 175 V, T
A
= 150
C
25
5.0
25
5.0
25
5.0
25
5.0
nA
A
nA
A
nA
A
nA
A
V
F
Forward Voltage
456
457
458
459
456/A-459/A
I
F
= 40 mA
I
F
= 10 mA
I
F
= 7.0 mA
I
F
= 3.0 mA
I
F
= 100 mA
1.0
1.0
1.0
1.0
1.0
V
V
V
V
V
C
O
Diode Capacitance
V
R
= 0, f
= 1.0 MHz
6.0
pF
Electrical Characteristics
TA = 25C unless otherwise noted
1N/FDLL 456/A / 457/A / 458/A / 459/A
High Conductance Low Leakage Diode
(continued)
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