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Электронный компонент: 2N7000

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TL G 11378
2N70002N7002NDF7000ANDS7002A
N-Channel
Enhancement
Mode
Field
Effect
Transistor
March 1993
2N7000 2N7002 NDF7000A NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
These n-channel enhancement mode field effect transistors
are produced using National's very high cell density third
generation DMOS technology These products have been
designed to minimize on-state resistance provide rugged
and reliable performance and fast switching They can be
used with a minimum of effort in most applications requir-
ing up to 400 mA DC and can deliver pulsed currents up to
2A This product is particularly suited to low voltage low
current applications such as small servo motor controls
power MOSFET gate drivers and other switching applica-
tions
Features
Y
Efficient high density cell design approaching
(3 million in
2
)
Y
Voltage controlled small signal switch
Y
Rugged
Y
High saturation current
Y
Low R
DS
(ON)
TL G 11378 1
TO-92
7000 Series
TL G 11378 2
TO-236 AB
(SOT-23)
7002 Series
TL G 11378 3
Absolute Maximum Ratings
Symbol
Parameter
2N7000
2N7002
NDF7000A
NDS7002A
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
s
1 MX)
60
V
V
GSS
Gate-Source Voltage
g
40
V
I
D
Drain Current
Continuous
200
115
400
280
mA
Pulsed
500
800
2000
1500
mA
P
D
Total Power Dissipation
T
A
e
25 C
400
200
625
300
mW
Derating above 25 C
3 2
1 6
5
2 4
mW C
T
J
T
STG
Operating and Storage Temperature Range
b
55 to 150
b
65 to 150
C
T
L
Maximum Lead Temperature for Soldering
300
C
Purposes
from Case for 10 Seconds
C1995 National Semiconductor Corporation
RRD-B30M115 Printed in U S A
2N7000
Electrical Characteristics
T
C
e
25 C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
e
0V I
D
e
10 mA
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
e
48V V
GS
e
0V
1
m
A
T
C
e
125 C
1
mA
I
GSSF
Gate-Body Leakage Forward
V
GS
e b
15V V
DS
e
0V
b
10
nA
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
V
DS
e
V
GS
I
D
e
1 mA
0 8
2 1
3
V
r
DS(ON)
Static Drain-Source
V
GS
e
10V I
D
e
0 5A
1 2
5
X
On-Resistance
T
C
e
125 C
1 9
9
X
V
DS(ON)
Drain-Source On-Voltage
V
GS
e
10V I
D
e
0 5A
0 6
2 5
V
V
GS
e
4 5V I
D
e
75 mA
0 14
0 4
V
I
D(ON)
On-State Drain Current
V
GS
e
4 5V V
DS
e
10V
75
600
mA
g
FS
Forward Transconductance
V
DS
e
10V I
D
e
200 mA
100
320
ms
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
e
25V V
GS
e
0V f
e
1 0 MHz
20
60
pF
C
oss
Output Capacitance
11
25
pF
C
rss
Reverse Transfer Capacitance
4
5
pF
SWITCHING CHARACTERISTICS
t
on
Turn-On Time
V
DD
e
15V I
D
e
0 5V V
GS
e
10V
10
ns
t
off
Turn-Off Time
R
G
e
25X R
L
e
25X
10
ns
BODY-DRAIN DIODE RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
200
mA
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
500
mA
V
SD
Drain-Source Diode Forward Voltage
V
GS
e
0V I
S
e
200 mA
1 5
V
THERMAL CHARACTERISTICS
R
i
JA
Thermal Resistance Junction to Ambient
312 5
C W
R
i
JC
Thermal Resistance Junction to Case
40
C W
Pulse Test Pulse Width
s
300 ms Duty Cycle
s
2 0%
2
2N7002
Electrical Characteristics
T
C
e
25 C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
e
0V I
D
e
10 mA
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
e
60V V
GS
e
0V
1
m
A
T
C
e
125 C
500
m
A
I
GSSF
Gate-Body Leakage Forward
V
GS
e
20V
100
nA
I
GSSR
Gate-Body Leakage Reverse
V
GS
e b
20V
b
100
nA
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
V
DS
e
V
GS
I
D
e
250 mA
1
2 1
2 5
V
r
DS(ON)
Static Drain-Source
V
GS
e
10V I
D
e
0 5A
1 2
7 5
X
On-Resistance
T
C
e
125 C
2
13 5
X
V
GS
e
5V I
D
e
50 mA
1 7
7 5
X
T
C
e
125 C
2 8
13 5
X
V
DS(ON)
Drain-Source On-Voltage
V
GS
e
10V I
D
e
0 5A
0 6
3 75
V
V
GS
e
5V I
D
e
50 mA
0 09
1 5
V
I
D(ON)
On-State Drain Current
V
GS
e
10V V
DS
t
2 V
DS(ON)
500
2700
mA
g
FS
Forward Transconductance
V
DS
t
2 V
DS(ON)
I
D
e
200 mA
80
320
ms
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
e
25V V
GS
e
0V f
e
1 0 MHz
20
50
pF
C
oss
Output Capacitance
11
25
pF
C
rss
Reverse Transfer Capacitance
4
5
pF
SWITCHING CHARACTERISTICS
t
ON
Turn-On Time
V
DD
e
30V I
D
e
200 mA V
GS
e
10V
20
ns
t
OFF
Turn-Off Time
R
GEN
e
25X R
L
e
150X
20
ns
BODY-DRAIN DIODE RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
115
mA
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
800
mA
V
SD
Drain-Source Diode Forward Voltage
V
GS
e
0V I
S
e
115 mA
1 5
V
THERMAL CHARACTERISTICS
R
i
JA
Thermal Resistance Junction to Ambient
625
C W
Pulse Test Pulse Width
s
300 ms Duty Cycle
s
2 0%
3
NDF7000A
Electrical Characteristics
T
C
e
25 C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
e
0V I
D
e
10 mA
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
e
48V V
GS
e
0V
1
m
A
T
C
e
125 C
1
mA
I
GSSF
Gate-Body Leakage Forward
V
GS
e b
15V
b
10
nA
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
V
DS
e
V
GS
I
D
e
1 mA
0 8
2 1
3
V
r
DS(ON)
Static Drain-Source
V
GS
e
10V I
D
e
0 5A
1 2
2
X
On-Resistance
T
C
e
125 C
2
3 5
X
V
DS(ON)
Drain-Source On-Voltage
V
GS
e
10V I
D
e
500 mA
0 6
1
V
V
GS
e
4 5V I
D
e
75 mA
0 14
0 225
V
I
D(ON)
On-State Drain Current
V
GS
e
4 5V V
DS
t
2 V
DS(ON)
400
600
mA
g
FS
Forward Transconductance
V
DS
t
2 V
DS(ON)
I
D
e
200 mA
100
320
ms
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
e
25V V
GS
e
0V f
e
1 0 MHz
20
60
pF
C
oss
Output Capacitance
11
25
pF
C
rss
Reverse Transfer Capacitance
4
5
pF
SWITCHING CHARACTERISTICS
t
on
Turn-On Time
V
DD
e
15V I
D
e
500 mA V
GS
e
10V
10
ns
t
off
Turn-Off Time
R
G
e
25X R
L
e
25X
10
ns
BODY-DRAIN DIODE RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
400
mA
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
2000
mA
V
SD
Drain-Source Diode Forward Voltage
V
GS
e
0V I
S
e
400 mA
0 88
1 2
V
THERMAL CHARACTERISTICS
R
i
JA
Thermal Resistance Junction to Ambient
200
C W
Pulse Test Pulse Width
s
300 ms Duty Cycle
s
2 0%
4
NDS7002A
Electrical Characteristics
T
C
e
25 C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
e
0V I
D
e
10 mA
60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
e
60V V
GS
e
0V
1
m
A
T
C
e
125 C
500
m
A
I
GSSF
Gate-Body Leakage Forward
V
GS
e
20V
100
nA
I
GSSR
Gate-Body Leakage Reverse
V
GS
e b
20V
b
100
nA
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
V
DS
e
V
GS
I
D
e
250 mA
1
2 1
2 5
V
r
DS(ON)
Static Drain-Source
V
GS
e
10V I
D
e
0 5A
1 2
2
X
On-Resistance
T
C
e
125 C
2
3 5
X
V
GS
e
5V I
D
e
50 mA
1 7
3
X
T
C
e
125 C
2 8
5
X
V
DS(ON)
Drain-Source On-Voltage
V
GS
e
10V I
D
e
500 mA
0 6
1
V
V
GS
e
5 0V I
D
e
50 mA
0 09
0 15
V
I
D(ON)
On-State Drain Current
V
GS
e
10V V
DS
t
2 V
DS(ON)
500
2700
mA
g
FS
Forward Transconductance
V
DS
t
2 V
DS(ON)
I
D
e
200 mA
80
320
ms
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
e
25V V
GS
e
0V f
e
1 0 MHz
20
50
pF
C
oss
Output Capacitance
11
25
pF
C
rss
Reverse Transfer Capacitance
4
5
pF
SWITCHING CHARACTERISTICS
t
ON
Turn-On Time
V
DD
e
30V I
D
e
200 mA V
GS
e
10V
20
ns
t
OFF
Turn-Off Time
R
G
e
25X R
L
e
150X
20
ns
BODY-DRAIN DIODE RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
280
mA
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
1500
mA
V
SD
Drain-Source Diode Forward Voltage
V
GS
e
0V I
S
e
400 mA
0 88
1 2
V
THERMAL CHARACTERISTICS
R
i
JA
Thermal Resistance Junction to Ambient
417
C W
Pulse Test Pulse Width
s
300 ms Duty Cycle
s
2 0%
5