TL F 6500
5410DM5410DM7410
Triple
3-Input
NAND
Gates
June 1989
5410 DM5410 DM7410
Triple 3-Input NAND Gates
General Description
This device contains three independent gates each of which
performs the logic NAND function
Features
Y
Alternate Military Aerospace device (5410) is available
Contact a National Semiconductor Sales Office Distrib-
utor for specifications
Connection Diagram
Dual-In-Line Package
TL F 6500 1
Order Number 5410DMQB 5410FMQB DM5410J DM5410W or DM7410N
See NS Package Number J14A N14A or W14B
Function Table
Y
e
ABC
Inputs
Output
A
B
C
Y
X
X
L
H
X
L
X
H
L
X
X
H
H
H
H
L
H
e
High Logic Level
L
e
Low Logic Level
X
e
Either Low or High Logic Level
C1995 National Semiconductor Corporation
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings
(Note)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
7V
Input Voltage
5 5V
Operating Free Air Temperature Range
DM54 and 54
b
55 C to
a
125 C
DM74
0 C to
a
70 C
Storage Temperature Range
b
65 C to
a
150 C
Note
The ``Absolute Maximum Ratings'' are those values
beyond which the safety of the device cannot be guaran-
teed The device should not be operated at these limits The
parametric values defined in the ``Electrical Characteristics''
table are not guaranteed at the absolute maximum ratings
The ``Recommended Operating Conditions'' table will define
the conditions for actual device operation
Recommended Operating Conditions
Symbol
Parameter
DM5410
DM7410
Units
Min
Nom
Max
Min
Nom
Max
V
CC
Supply Voltage
4 5
5
5 5
4 75
5
5 25
V
V
IH
High Level Input Voltage
2
2
V
V
IL
Low Level Input Voltage
0 8
0 8
V
I
OH
High Level Output Current
b
0 4
b
0 4
mA
I
OL
Low Level Output Current
16
16
mA
T
A
Free Air Operating Temperature
b
55
125
0
70
C
Electrical Characteristics
over recommended operating free air temperature range (unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 1)
V
I
Input Clamp Voltage
V
CC
e
Min I
I
e b
12 mA
b
1 5
V
V
OH
High Level Output
V
CC
e
Min I
OH
e
Max
2 4
3 4
V
Voltage
V
IL
e
Max
V
OL
Low Level Output
V
CC
e
Min I
OL
e
Max
0 2
0 4
V
Voltage
V
IH
e
Min
I
I
Input Current
Max
V
CC
e
Max V
I
e
5 5V
1
mA
Input Voltage
I
IH
High Level Input Current
V
CC
e
Max V
I
e
2 4V
40
m
A
I
IL
Low Level Input Current
V
CC
e
Max V
I
e
0 4V
b
1 6
mA
I
OS
Short Circuit
V
CC
e
Max
DM54
b
20
b
55
mA
Output Current
(Note 2)
DM74
b
18
b
55
I
CCH
Supply Current with
V
CC
e
Max
3
6
mA
Outputs High
I
CCL
Supply Current with
V
CC
e
Max
9
16 5
mA
Outputs Low
Switching Characteristics
at V
CC
e
5V and T
A
e
25 C (See Section 1 for Test Waveforms and Output Load)
Symbol
Parameter
Conditions
Min
Max
Units
t
PLH
Propagation Delay Time
C
L
e
15 pF
22
ns
Low to High Level Output
R
L
e
400X
t
PHL
Propagation Delay Time
15
ns
High to Low Level Output
Note 1
All typicals are at V
CC
e
5V T
A
e
25 C
Note 2
Not more than one output should be shorted at a time
2
5410DM5410DM7410
Triple
3-Input
NAND
Gates
Physical Dimensions
inches (millimeters) (Continued)
14-Lead Ceramic Flat Package (W)
Order Number 5410FMQB or DM5410W
NS Package Number W14B
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effectiveness
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