TL F 9598
54F74F827
74F828
10-Bit
BuffersLine
Drivers
December 1994
54F 74F827
74F828
10-Bit Buffers Line Drivers
General Description
The 'F827 and 'F828 10-bit bus buffers provide high per-
formance bus interface buffering for wide data address
paths or buses carrying parity The 10-bit buffers have NOR
output enables for maximum control flexibility
The 'F827 and 'F828 are functionally- and pin-compatible to
AMD's Am29827 and Am29828 The 'F828 is an inverting
version of the 'F827
Features
Y
TRI-STATE
output
Y
'F828 is inverting
Y
Direct replacement for AMD's Am29827 and Am29828
Commercial
Military
Package
Package Description
Number
74F827SPC
N24C
24-Lead (0 300 Wide) Molded Dual-In-Line
54F827SDM (Note 2)
J24F
24-Lead (0 300 Wide) Ceramic Dual-In-Line
74F827SC (Note 1)
M24B
24-Lead (0 300 Wide) Molded Small Outline JEDEC
54F827FM (Note 2)
W24C
24-Lead Cerpack
54F827LM (Note 2)
E28A
24-Lead Ceramic Leadless Chip Carrier Type C
74F828SPC
N24C
24-Lead (0 300 Wide) Molded Dual-In-Line
74F828SC (Note 1)
M24B
24-Lead (0 300 Wide) Molded Small Outline JEDEC
Note 1
Devices also available in 13
reel Use suffix
e
SCX
Note 2
Military grade device with environmental and burn-in processing Use suffix
e
SDMQB FMQB and LMQB
Connection Diagrams
Pin Assignment for
DIP Flatpak and SOIC
Pin Assignment
for LCC
'F827
TL F 9598 1
'F828
TL F 9598 8
'F827
TL F 9598 2
TRI-STATE
is a registered trademark of National Semiconductor Corporation
C1995 National Semiconductor Corporation
RRD-B30M75 Printed in U S A
Logic Symbols
IEEE IEC
'F827
TL F 9598 6
IEEE IEC
'F828
TL F 9598 7
'F827
TL F 9598 3
'F828
TL F 9598 10
2
Unit Loading Fan Out
54F 74F
Pin Names
Description
U L
Input I
IH
I
IL
HIGH LOW
Output I
OH
I
OL
OE
1
OE
2
Output Enable Input
1 0 1 0
20 mA
b
0 6 mA
D
0
D
7
Data Inputs
1 0 1 0
20 mA
b
0 6 mA
O
0
O
7
Data Outputs TRI-STATE 600 106 6 (80)
b
12 mA 64 mA (48 mA)
Functional Description
The 'F827 and 'F828 are line drivers designed to be em-
ployed as memory address drivers clock drivers and bus-
oriented transmitters receivers which provide improved PC
board density The devices have TRI-STATE outputs con-
trolled by the Output Enable (OE) pins The outputs can sink
64 mA (48 mA mil) and source 15 mA Input clamp diodes
limit high-speed termination effects
Function Table
Inputs
Outputs
OE
D
n
O
n
Function
'F827
'F828
L
H
H
L
Transparent
L
L
L
H
Transparent
H
X
Z
Z
High Z
H
e
HIGH Voltage level
L
e
LOW Voltage Level
Z
e
High Impedance
X
e
Immaterial
Logic Diagrams
'F827
TL F 9598 4
Please note that this diagram is provided only for the understanding of logic operations and should not be used to estimate propagation delays
'F828
TL F 9598 11
Please note that this diagram is provided only for the understanding of logic operations and should not be used to estimate propagation delays
3
Absolute Maximum Ratings
(Note 1)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Storage Temperature
b
65 C to
a
150 C
Ambient Temperature under Bias
b
55 C to
a
125 C
Junction Temperature under Bias
b
55 C to
a
175 C
Plastic
b
55 C to
a
150 C
V
CC
Pin Potential to
Ground Pin
b
0 5V to
a
7 0V
Input Voltage (Note 2)
b
0 5V to
a
7 0V
Input Current (Note 2)
b
30 mA to
a
5 0 mA
Voltage Applied to Output
in HIGH State (with V
CC
e
0V)
Standard Output
b
0 5V to V
CC
TRI-STATE Output
b
0 5V to
a
5 5V
Current Applied to Output
in LOW State (Max)
twice the rated I
OL
(mA)
Note 1
Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired Functional operation under
these conditions is not implied
Note 2
Either voltage limit or current limit is sufficient to protect inputs
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
b
55 C to
a
125 C
Commercial
0 C to
a
70 C
Supply Voltage
Military
a
4 5V to
a
5 5V
Commercial
a
4 5V to
a
5 5V
DC Electrical Characteristics
Symbol
Parameter
54F 74F
Units
V
CC
Conditions
Min
Typ
Max
V
IH
Input HIGH Voltage
2 0
V
Recognized as a HIGH Signal
V
IL
Input LOW Voltage
0 8
V
Recognized as a LOW Signal
V
CD
Input Clamp Diode Voltage
b
1 2
V
Min
I
IN
e b
18 mA
V
OH
Output HIGH
54F 10% V
CC
2 4
I
OH
e b
3 mA
Voltage
54F 10% V
CC
2 0
I
OH
e b
12 mA
74F 10% V
CC
2 4
V
Min
I
OH
e b
3 mA
74F 10% V
CC
2 0
I
OH
e b
15 mA
74F 5% V
CC
2 7
I
OH
e b
3 mA
V
OL
Output LOW
54F 10% V
CC
0 55
V
Min
I
OL
e
48 mA
Voltage
74F 10% V
CC
0 55
I
OL
e
64 mA
I
IH
Input HIGH
54F
20 0
m
A
Max
V
IN
e
2 7V
Current
74F
5 0
I
BVI
Input HIGH Current
54F
100
m
A
Max
V
IN
e
7 0V
Breakdown Test
74F
7 0
I
CEX
Output HIGH
54F
250
m
A
Max
V
OUT
e
V
CC
Leakage Current
74F
50
V
ID
Input Leakage
74F
4 75
V
0 0
I
ID
e
1 9 mA
Test
All Other Pins Grounded
I
OD
Output Leakage
74F
3 75
m
A
0 0
V
IOD
e
150 mV
Circuit Current
All Other Pins Grounded
I
IL
Input LOW Current
b
0 6
mA
Max
V
IN
e
0 5V
I
OZH
Output Leakage Current
50
m
A
Max
V
OUT
e
2 7V
I
OZL
Output Leakage Current
b
50
m
A
Max
V
OUT
e
0 5V
I
OS
Output Short-Circuit Current
b
100
b
225
mA
Max
V
OUT
e
0V
4
DC Electrical Characteristics
(Continued)
Symbol
Parameter
54F 74F
Units
V
CC
Conditions
Min
Typ
Max
I
ZZ
Bus Drainage Test
500
m
A
0 0V
V
OUT
e
5 25V
I
CCH
Power Supply Current ('F827)
30
45
mA
Max
V
O
e
HIGH
I
CCL
Power Supply Current ('F827)
60
90
mA
Max
V
O
e
LOW
I
CCZ
Power Supply Current ('F827)
40
60
mA
Max
V
O
e
HIGH Z
I
CCH
Power Supply Current ('F828)
14
20
mA
Max
V
O
e
HIGH
I
CCL
Power Supply Current ('F828)
56
85
mA
Max
V
O
e
LOW
I
CCZ
Power Supply Current ('F828)
35
50
mA
Max
V
O
e
HIGH Z
AC Electrical Characteristics
74F
54F
74F
T
A
e a
25 C
T
A
V
CC
e
Mil
T
A
V
CC
e
Com
Symbol
Parameter
V
CC
e a
5 0V
C
L
e
50 pF
C
L
e
50 pF
Units
C
L
e
50 pF
Min
Typ
Max
Min
Max
Min
Max
t
PLH
Propagation Delay
1 0
3 0
5 5
1 0
7 5
1 0
6 5
ns
t
PHL
Data to Output ('F827)
1 5
3 3
5 5
1 5
7 0
1 5
6 0
t
PLH
Propagation Delay
1 0
3 0
5 0
1 0
5 5
ns
t
PHL
Data to Output ('F828)
1 0
2 0
4 0
1 0
4 0
t
PZH
Output Enable Time
3 0
5 7
9 0
2 5
10 0
2 5
9 5
ns
t
PZL
OE to O
n
3 5
6 8
11 5
3 0
12 5
3 0
12 0
t
PHZ
Output Disable Time
1 5
3 3
8 0
1 5
9 0
1 5
8 5
ns
t
PLZ
OE to O
n
1 0
3 5
8 0
1 0
9 0
1 0
8 5
Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are
defined as follows
74F
827 828
S
C
X
Temperature Range Family
Special Variations
74F
e
Commercial
X
e
Devices shipped in 13 reel
54F
e
Military
Temperature Range
Device Type
C
e
Commercial (0 C to
a
70 C)
M
e
Military (
b
55 C to
a
125 C)
Package Code
SP
e
Slim Plastic DIP
SD
e
Slim Ceramic DIP
F
e
Flatpak
L
e
Leadless Chip Carrier (LCC)
S
e
Small Outline (SOIC)
5
Physical Dimensions
inches (millimeters)
28-Lead Ceramic Leadless Chip Carrier (L)
NS Package Number E28A
24-Lead (0 300 Wide) Ceramic Dual-In-Line Package (SD)
NS Package Number J24F
6
Physical Dimensions
inches (millimeters) (Continued)
24-Lead Small Outline Integrated Circuit (S)
NS Package Number M24B
24-Lead Plastic Slim (0 300 Wide) Dual-In-Line Package (SP)
NS Package Number N24C
7
54F74F827
74F828
10-Bit
BuffersLine
Drivers
Physical Dimensions
inches (millimeters) (Continued)
24-Lead Ceramic Flatpak (F)
NS Package Number W24C
LIFE SUPPORT POLICY
NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION As used herein
1 Life support devices or systems are devices or
2 A critical component is any component of a life
systems which (a) are intended for surgical implant
support device or system whose failure to perform can
into the body or (b) support or sustain life and whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system or to affect its safety or
with instructions for use provided in the labeling can
effectiveness
be reasonably expected to result in a significant injury
to the user
National Semiconductor
National Semiconductor
National Semiconductor
National Semiconductor
National Semiconductores
National Semiconductor
Corporation
GmbH
Japan Ltd
Hong Kong Ltd
Do Brazil Ltda
(Australia) Pty Ltd
2900 Semiconductor Drive
Livry-Gargan-Str 10
Sumitomo Chemical
13th Floor Straight Block
Rue Deputado Lacorda Franco
Building 16
P O Box 58090
D-82256 F4urstenfeldbruck
Engineering Center
Ocean Centre 5 Canton Rd
120-3A
Business Park Drive
Santa Clara CA 95052-8090
Germany
Bldg 7F
Tsimshatsui Kowloon
Sao Paulo-SP
Monash Business Park
Tel 1(800) 272-9959
Tel (81-41) 35-0
1-7-1 Nakase Mihama-Ku
Hong Kong
Brazil 05418-000
Nottinghill Melbourne
TWX (910) 339-9240
Telex 527649
Chiba-City
Tel (852) 2737-1600
Tel (55-11) 212-5066
Victoria 3168 Australia
Fax (81-41) 35-1
Ciba Prefecture 261
Fax (852) 2736-9960
Telex 391-1131931 NSBR BR
Tel (3) 558-9999
Tel (043) 299-2300
Fax (55-11) 212-1181
Fax (3) 558-9998
Fax (043) 299-2500
National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications
PDF 
ZIP